KR100344824B1 - Solar cell and method for manufacturing the same - Google Patents
Solar cell and method for manufacturing the same Download PDFInfo
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- KR100344824B1 KR100344824B1 KR1019990050301A KR19990050301A KR100344824B1 KR 100344824 B1 KR100344824 B1 KR 100344824B1 KR 1019990050301 A KR1019990050301 A KR 1019990050301A KR 19990050301 A KR19990050301 A KR 19990050301A KR 100344824 B1 KR100344824 B1 KR 100344824B1
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 238000000034 method Methods 0.000 title description 12
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 238000002161 passivation Methods 0.000 claims abstract description 25
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims abstract description 21
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 238000005486 sulfidation Methods 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- UYJXRRSPUVSSMN-UHFFFAOYSA-P ammonium sulfide Chemical compound [NH4+].[NH4+].[S-2] UYJXRRSPUVSSMN-UHFFFAOYSA-P 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000000593 degrading effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
본 발명은 ITO(Indium Tin Oxide)막과 InP 표면 사이에 존재하는 계면 상태를 감소시켜 전기적 특성을 향상시킨 태양 전지 및 그의 제조 방법에 관한 것으로, 태양 전지의 구조는 상부쪽의 일정 두께가 메사 형태를 갖고 p형층으로 사용되는 InP 기판;상기 InP 기판의 하면에 형성되어 하부 전극으로 사용되는 오믹 콘택층;상기 InP 기판상에 형성되는 황화 패시베이션층;상기 황화 패시베이션층상에 형성되어 N+층과 반사방지막 역할을 하는 ITO층;상기 ITO층상에 형성되어 상부 전극으로 사용되는 탑 그리드층을 포함하여 이루어진다.The present invention relates to a solar cell and a method of manufacturing the same, which reduce electrical interface state existing between an indium tin oxide (ITO) film and an InP surface, and a manufacturing method thereof. An InP substrate having a p-type layer; an ohmic contact layer formed on a bottom surface of the InP substrate and used as a lower electrode; a sulfide passivation layer formed on the InP substrate; an N + layer and an anti-reflection film formed on the sulfide passivation layer. An ITO layer, which serves as a top layer, is formed on the ITO layer and includes a top grid layer used as an upper electrode.
Description
본 발명은 태양 전지에 관한 것으로, 특히 ITO(Indium Tin Oxide)막과 InP 표면 사이에 존재하는 계면 상태를 감소시켜 전기적 특성을 향상시킨 태양 전지 및 그의 제조 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solar cell, and more particularly, to a solar cell and a method of manufacturing the same, by reducing an interface state existing between an indium tin oxide (ITO) film and an InP surface to improve electrical characteristics.
태양 전지는 태양으로 부터 생성된 빛 에너지를 전기에너지로 바꾸어 주는 반도체 소자이다.Solar cells are semiconductor devices that convert light energy generated by the sun into electrical energy.
빛의 파장에 적합한 최적의 pn 반도체로 이루어진 태양 전지에 빛을 비추게 되면 빛에너지(광자)에 의해 전자와 정공이 생겨나게 된다.When light shines on a solar cell composed of an optimal pn semiconductor suitable for the wavelength of light, electrons and holes are generated by light energy (photons).
p형 반도체에서는 다수 캐리어가 정공이고 소수 캐리어가 전자이므로 빛에 의해 생성된 전자와 정공으로 인해 형성된 밀도차는 전자의 경우에 더욱 급격한 변화가 있고, n형 반도체에서는 이와 반대되는 현상이 일어난다.In the p-type semiconductor, since the majority carriers are holes and the minority carriers are electrons, the density difference formed by the electrons and holes generated by light changes more rapidly in the case of electrons, and the opposite phenomenon occurs in the n-type semiconductor.
이와 같이 전자와 정공이 이동하여 전류가 흐르게 된다.As such, the electrons and holes move to flow the current.
이하, 첨부된 도면을 참고하여 종래 기술의 태양 전지에 관하여 설명하면 다음과 같다.Hereinafter, a solar cell of the prior art will be described with reference to the accompanying drawings.
도 1은 종래 기술의 태양 전지의 구조 단면도이다.1 is a structural cross-sectional view of a solar cell of the prior art.
종래 기술의 태양 전지는 p형층으로 사용되는 InP 기판(1)과, InP 기판(1)의 하면에 형성되어 하부 전극으로 사용되는 오믹 콘택층(2)과, 상기 InP 기판(1)상에 메사(mesa) 구조로 차례로 형성되는 접합층(4),ITO층(3)과, 상기 ITO층(3)상에 형성되는 탑 그리드층(5)으로 구성된다.Prior art solar cells include an InP substrate 1 used as a p-type layer, an ohmic contact layer 2 formed on a lower surface of the InP substrate 1 and used as a lower electrode, and a mesa on the InP substrate 1. A bonding layer 4, an ITO layer 3, which are sequentially formed in a (mesa) structure, and a top grid layer 5 formed on the ITO layer 3 are formed.
상기 ITO층(3)은 N+층과 반사방지막 역할을 하고 상기 탑 그리드층(5)은 상부 전극이다.The ITO layer 3 serves as an N + layer and an antireflection film, and the top grid layer 5 is an upper electrode.
그리고 상기 ITO층(3)은 스퍼터링 공정으로 형성되고, 이와 같은 ITO층(3)을 형성하기 위한 스퍼터링 공정후에 메사 에칭을 하여 접합층(4),ITO층(3)이 메사 구조를 갖도록한다.The ITO layer 3 is formed by a sputtering process, and after the sputtering process for forming the ITO layer 3, mesa etching is performed so that the bonding layer 4 and the ITO layer 3 have a mesa structure.
그후에 상기 ITO층(3)상에 탑 그리드 콘택층을 형성하는 순서로 공정을 진행한다.Thereafter, the process proceeds in the order of forming a top grid contact layer on the ITO layer 3.
이와 같은 구조를 갖는 종래 기술의 태양 전지는 ITO층(3)으로 입사되는 빛(광자)에 의해 N+층 및 P형층에서 전자와 정공의 이동이 일어나 전류가 흐르게 된다.In the solar cell of the prior art having such a structure, electrons and holes move in the N + layer and the P-type layer due to light (photons) incident on the ITO layer 3, so that current flows.
이와 같은 전류의 흐름은 오믹 콘택층(2)과 탑 그리드층(5)를 통하여 외부로 전기적 에너지를 출력하게 된다.This current flow outputs electrical energy to the outside through the ohmic contact layer 2 and the top grid layer 5.
이와 같은 종래 기술의 태양 전지는 다음과 같은 문제가 있다.Such a solar cell of the prior art has the following problems.
N+/P 접합 형성과 반사방지막으로 사용되는 ITO(Indium Tin Oxide)막을 InP 기판의 상면에 스퍼터링에 의해 형성하는데, 이는 ITO막과 InP 표면 사이에 많은 계면 상태를 존재시키게 된다.An indium tin oxide (ITO) film, which is used as an N + / P junction formation and an antireflection film, is formed on the upper surface of the InP substrate by sputtering, which causes a large number of interface states between the ITO film and the InP surface.
이와 같은 많은 계면 상태 즉, 두꺼운 접합층은 입사되는 빛에 의해 생성된 광 캐리어들이 ITO/InP 계면에서 감소되어 태양 전지의 전기적 특성을 저하시킨다.Many such interface states, that is, thick junction layers, reduce the optical carriers generated by incident light at the ITO / InP interface, thereby degrading the electrical properties of the solar cell.
본 발명은 이와 같은 종래 기술의 태양 전지의 문제점을 해결하기 위하여 안출한 것으로, ITO(Indium Tin Oxide)막과 InP 표면 사이에 존재하는 계면 상태를 감소시켜 전기적 특성을 향상시킨 태양 전지 및 그의 제조 방법을 제공하는데 그 목적이 있다.The present invention has been made to solve the problems of the solar cell of the prior art, a solar cell and a method of manufacturing the solar cell improved the electrical properties by reducing the interface state existing between the ITO (Indium Tin Oxide) film and the InP surface The purpose is to provide.
도 1은 종래 기술의 태양 전지의 구조 단면도1 is a structural cross-sectional view of a solar cell of the prior art
도 2는 본 발명에 따른 태양 전지의 구조 단면도2 is a structural cross-sectional view of a solar cell according to the present invention.
도 3a내지 도 3e는 본 발명에 따른 태양 전지의 공정 단면도 및 공정 개요도3A to 3E are cross-sectional views and process schematic views of a solar cell according to the present invention.
도면의 주요 부분에 대한 부호의 설명Explanation of symbols for the main parts of the drawings
21. InP 기판 22. 오믹 콘택층21. InP substrate 22. Ohmic contact layer
23. 황화 패시베이션층 24. ITO층23. Sulfide passivation layer 24. ITO layer
25. 탑 그리드 콘택층25. Top Grid Contact Layer
이와 같은 목적을 달성하기 위한 본 발명에 따른 태양 전지는 상부쪽의 일정 두께가 메사 형태를 갖고 p형층으로 사용되는 InP 기판;상기 InP 기판의 하면에 형성되어 하부 전극으로 사용되는 오믹 콘택층;상기 InP 기판상에 형성되는 황화 패시베이션층;상기 황화 패시베이션층상에 형성되어 N+층과 반사방지막 역할을 하는 ITO층;상기 ITO층상에 형성되어 상부 전극으로 사용되는 탑 그리드층을 포함하여 구성되는 것을 특징으로 하고, 본 발명에 따른 태양 전지의 제조 방법은 InP 기판의 하면에 오믹 콘택층을 형성하는 단계;상기 오믹 콘택층이 형성된 InP 기판을 클리닝하고 (NH4)2Sx용액에 담궈 황화 패시베이션층을 형성하는 단계;상기 황화 패시베이션층상에 ITO층을 형성하는 단계;상기 ITO층,황화 패시베이션층 그리고 InP층의 일정 두께를 메사 식각하는 단계;상기 ITO층상에 상부 전극으로 사용되는 탑 그리드 콘택층을 형성하는 단계를 포함하여 이루어지는 특징으로 한다.A solar cell according to the present invention for achieving the above object is an InP substrate having a predetermined thickness of the upper side has a mesa shape and is used as a p-type layer; A sulfide passivation layer formed on an InP substrate; an ITO layer formed on the sulfide passivation layer to serve as an N + layer and an anti-reflection film; and a top grid layer formed on the ITO layer and used as an upper electrode. sulfide passivation layer immersed in the cleaning of an InP substrate is formed the ohmic contact layer (NH 4) 2 S x solution; and, the manufacturing method of the solar cell when the ohmic forming a contact layer on the InP substrate according to the invention, Forming an ITO layer on the sulfide passivation layer; Mesa etching a predetermined thickness of the ITO layer, sulfide passivation layer and InP layer And forming a top grid contact layer to be used as an upper electrode on the ITO layer.
이하, 첨부된 도면을 참고하여본 발명에 따른 태양 전지 및 그의 제조 방법에 관하여 상세히 설명하면 다음과 같다.Hereinafter, a solar cell and a manufacturing method thereof according to the present invention will be described in detail with reference to the accompanying drawings.
도 2는 본 발명에 따른 태양 전지의 구조 단면도이고, 도 3a내지 도 3e는 본 발명에 따른 태양 전지의 공정 단면도 및 공정 개요도이다.2 is a structural cross-sectional view of a solar cell according to the present invention, and FIGS. 3A to 3E are process cross-sectional views and a process schematic view of the solar cell according to the present invention.
본 발명에 따른 태양 전지는 상부쪽의 일정 두께가 메사 형태를 갖고 p형층으로 사용되는 InP 기판(21)과, 상기 InP 기판(21)의 하면에 형성되어 하부 전극으로 사용되는 오믹 콘택층(22)과, 상기 InP 기판(21)상에 InP 기판(21)의 상부쪽 메사 형태 부분과 동일 너비로 형성되는 황화 패시베이션층(Sulfur Passivation Layer)(23)과, 상기 황화 패시베이션층(23)상에 형성되어 N+층과 반사방지막 역할을 하는 ITO층(24)과, 상기 ITO층(24)상에 형성되는 탑 그리드층(25)으로 구성된다.In the solar cell according to the present invention, an InP substrate 21 having a mesa shape having a predetermined thickness at an upper side thereof and used as a p-type layer, and an ohmic contact layer 22 formed on a lower surface of the InP substrate 21 and used as a lower electrode. ), And a sulfide passivation layer 23 formed on the InP substrate 21 with the same width as the upper mesa portion of the InP substrate 21, and on the sulfide passivation layer 23. It is formed of an ITO layer 24 formed as an N + layer and an antireflection film, and a top grid layer 25 formed on the ITO layer 24.
상기 탑 그리드층(25)은 상부 전극이다.The top grid layer 25 is an upper electrode.
이와 같은 구조를 갖는 본 발명에 따른 태양 전지는 ITO층(24)과 InP 기판(21)과의 계면 상태의 층을 황화 암모늄((NH4)2Sx)용액을 이용하여 감소시킨 것으로 그 공정은 다음과 같이 진행된다.In the solar cell according to the present invention having such a structure, the layer in the interface state between the ITO layer 24 and the InP substrate 21 is reduced by using ammonium sulfide ((NH 4 ) 2 S x ) solution. Proceeds as follows.
먼저, 도 3a에서와 같이, InP 기판(21)의 하면에 Au/Be(1wt% Be)를 375℃의 온도로 2분간 RTP(Rapid Thermal Process) 공정으로 증착하여 하부 전극으로 사용되는 오믹 콘택층(22)을 형성한다.First, as shown in FIG. 3A, an ohmic contact layer used as a lower electrode by depositing Au / Be (1wt% Be) on a lower surface of an InP substrate 21 at a temperature of 375 ° C. for 2 minutes by a rapid thermal process (RTP) process. To form (22).
그리고 도 3b는 상기 오믹 콘택층(22)이 형성된 InP 기판(21)의 상면에 황화 패시베이션층을 형성하기 위한 공정 개요를 나타낸 것이다.3B shows a process outline for forming a sulfide passivation layer on the top surface of the InP substrate 21 on which the ohmic contact layer 22 is formed.
황화 패시베이션층(23)을 형성하기 위하여 먼저, 상기 오믹 콘택층(22)이 형성된 InP 기판(21)을 클리닝한다.In order to form the sulfide passivation layer 23, first, the InP substrate 21 on which the ohmic contact layer 22 is formed is cleaned.
이어, 상기 InP 기판(21)을 (NH4)2Sx용액에 담근다.Subsequently, the InP substrate 21 is immersed in (NH 4 ) 2 S x solution.
이때, 온도 조절 장치를 사용하여 용액의 온도를 최적화하고 황화 패시베이션층(23)이 형성된 InP 기판(21)을 용액에서 꺼내어 기판 표면에 남아있는 용액을 질소를 이용하여 제거한다.At this time, the temperature of the solution is optimized using a temperature control device, and the InP substrate 21 on which the sulfidation passivation layer 23 is formed is taken out of the solution, and the solution remaining on the substrate surface is removed using nitrogen.
상기의 황화 패시베이션층(23)의 형성시에 S-InP간의 반응을 촉진시키기 위하여 텅스텐 램프를 장치내로 조사한다.In the formation of the sulfide passivation layer 23, a tungsten lamp is irradiated into the apparatus to promote the reaction between S-InP.
그리고 이와 같이 황화 패시베이션층(23)의 형성이 완료되면 도 3c에서와 같이, 상기 황화 패시베이션층(23)상에 ITO층(24)을 스퍼터링 공정으로 형성한다.When the sulfidation passivation layer 23 is formed as described above, an ITO layer 24 is formed on the sulfide passivation layer 23 by a sputtering process, as shown in FIG. 3C.
이어, 도 3d에서와 같이, 상기 ITO층(24),황화 패시베이션층(23) 그리고 InP층의 일정 두께를 메사 식각 공정으로 전지 형태를 구성한다.Subsequently, as shown in FIG. 3D, a predetermined thickness of the ITO layer 24, the sulfide passivation layer 23, and the InP layer is configured by a mesa etching process to form a battery.
그리고 도 3e에서와 같이, 상부 전극으로 사용되는 탑 그리드 콘택층(25)을 형성한다.As shown in FIG. 3E, the top grid contact layer 25 used as the upper electrode is formed.
이와 같은 구조를 갖는 본 발명에 따른 태양 전지는 ITO층(24)으로 입사되는 빛(광자)에 의해 N+층 및 P형층에서 전자와 정공의 이동이 일어나 전류가 흐르게 된다.In the solar cell according to the present invention having the structure as described above, light (photons) incident on the ITO layer 24 causes electrons and holes to move in the N + layer and the P-type layer, so that current flows.
이와 같은 전류의 흐름은 오믹 콘택층(22)과 탑 그리드층(25)를 통하여 외부로 전기적 에너지를 출력하게 된다.Such a current flow outputs electrical energy to the outside through the ohmic contact layer 22 and the top grid layer 25.
이와 같은 본 발명에 따른 태양 전지 및 그의 제조 방법은 다음과 같은 효과가 있다.Such a solar cell and a manufacturing method thereof according to the present invention has the following effects.
태양 전지의 전기적 특성을 열화시키는 계면 상태층이 두꺼운 문제를 황화 암모늄 용액을 이용한 표면 처리로 얇게하여 광 캐리어의 감소를 막아 전기적 특성을 향상시키는 효과가 있다.The problem of thickening the interface state layer that degrades the electrical characteristics of the solar cell is thinned by the surface treatment using an ammonium sulfide solution, thereby preventing the reduction of the optical carrier, thereby improving the electrical characteristics.
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| JPH0629560A (en) * | 1992-07-07 | 1994-02-04 | Fuji Electric Corp Res & Dev Ltd | Manufacture of thin-film solar battery |
| JPH06204513A (en) * | 1993-01-07 | 1994-07-22 | Japan Energy Corp | Formation of ohmic electrode of solar cell |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH0629560A (en) * | 1992-07-07 | 1994-02-04 | Fuji Electric Corp Res & Dev Ltd | Manufacture of thin-film solar battery |
| JPH06204513A (en) * | 1993-01-07 | 1994-07-22 | Japan Energy Corp | Formation of ohmic electrode of solar cell |
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