KR100335290B1 - The Composition and Manufacturing Methods of NTC (Negative Temperature Coefficient) Thermistor - Google Patents
The Composition and Manufacturing Methods of NTC (Negative Temperature Coefficient) Thermistor Download PDFInfo
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- KR100335290B1 KR100335290B1 KR1019990046232A KR19990046232A KR100335290B1 KR 100335290 B1 KR100335290 B1 KR 100335290B1 KR 1019990046232 A KR1019990046232 A KR 1019990046232A KR 19990046232 A KR19990046232 A KR 19990046232A KR 100335290 B1 KR100335290 B1 KR 100335290B1
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- 239000000203 mixture Substances 0.000 title claims abstract description 39
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 19
- 229910020599 Co 3 O 4 Inorganic materials 0.000 claims abstract description 14
- 238000001354 calcination Methods 0.000 claims abstract description 7
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000010438 heat treatment Methods 0.000 claims abstract description 5
- 239000000843 powder Substances 0.000 claims description 8
- 239000011230 binding agent Substances 0.000 claims description 5
- 229910052742 iron Inorganic materials 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 230000000844 anti-bacterial effect Effects 0.000 claims 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 abstract description 16
- 229910000480 nickel oxide Inorganic materials 0.000 abstract description 13
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract description 12
- 239000011572 manganese Substances 0.000 abstract description 11
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 abstract description 10
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 abstract description 10
- 238000010304 firing Methods 0.000 abstract description 6
- 239000012535 impurity Substances 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 3
- 229910044991 metal oxide Inorganic materials 0.000 abstract description 2
- 150000004706 metal oxides Chemical class 0.000 abstract description 2
- 230000001747 exhibiting effect Effects 0.000 abstract 1
- 239000002994 raw material Substances 0.000 description 6
- 239000011787 zinc oxide Substances 0.000 description 5
- UBEWDCMIDFGDOO-UHFFFAOYSA-N cobalt(2+);cobalt(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[Co+2].[Co+3].[Co+3] UBEWDCMIDFGDOO-UHFFFAOYSA-N 0.000 description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 229910052596 spinel Inorganic materials 0.000 description 2
- 239000011029 spinel Substances 0.000 description 2
- 229910020637 Co-Cu Inorganic materials 0.000 description 1
- 229910017709 Ni Co Inorganic materials 0.000 description 1
- 229910003267 Ni-Co Inorganic materials 0.000 description 1
- 229910003262 Ni‐Co Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
- H01B3/10—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances metallic oxides
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D23/00—Control of temperature
- G05D23/19—Control of temperature characterised by the use of electric means
- G05D23/20—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature
- G05D23/24—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature the sensing element having a resistance varying with temperature, e.g. a thermistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B19/00—Apparatus or processes specially adapted for manufacturing insulators or insulating bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
- H01B3/12—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances ceramics
Abstract
본 발명은 돌입 전류제한용으로 이용되는 엔티시 써미스타의 조성물 및 제조 방법에 관한 것으로, 금속 산화물계로 이루어진 엔티시 써미스타의 조성물에서 조성물의 원가를 줄이기 위해 고가의 산화코발트(Co3O4)를 5wt%이하로 하면서 산화 니켈(NiO)을 값싼 산화망간(Mn3O4), 산화 철(Fe2O3), 산화 아연(ZnO)으로 대체한 조성물과 그 조성물에 H3BO3, Ca(OH)2를 첨가하여 대량 생산시 공정에서 유입 될 수 있는 불순물의 영향을 최소화 할 수 있는 조성물에 관한 것이다. 또한, 상기 조성으로 엔티시 써미스타 제조시 하소 공정(Calcination)을 제조 원가를 낮추면서도 우수한 전기적 특성을 얻기위하여 200 ∼ 400℃에서 저온 열처리한 후 소성 온도 1020℃ ∼ 1080℃로 소성하여 저가격이면서도 우수한 엔티시 써미스타 특성을 나타내는 조성물 및 그 제조 방법에 관한 것이다.The present invention relates to a composition and a method for manufacturing an antithesis thermistor used for inrush current limiting, in order to reduce the cost of the composition in the composition of the antithesis thermistor consisting of a metal oxide (Co 3 O 4 ) Is less than 5wt% and replaced with cheap manganese oxide (Mn 3 O 4 ), iron oxide (Fe 2 O 3 ), zinc oxide (ZnO) and nickel oxide (NiO) in the composition and H 3 BO 3 , Ca (OH) 2 relates to a composition that can minimize the effect of impurities that can be introduced in the process during mass production. In addition, in order to obtain excellent electrical properties while lowering the manufacturing cost of the calcining process (calcination) during the manufacture of the anti-thermistor with the above composition, after the low-temperature heat treatment at 200 ~ 400 ℃ firing temperature 1020 ℃ ~ 1080 ℃ low cost and excellent A composition exhibiting antithesis thermista properties and a method for producing the same.
Description
돌입 전류제한 및 온도 검출용 소자로 작용하는 엔티시(NTE: Negative Temperature Coefficient 이하 엔티시라 칭함) 써미스터의 조성물 및 그 제조 방법에 관한 것이며 더욱 자세하게는 Mn3O4-Co3O4-NiO-CuO-ZnO계와 Mn3O4-Co3O4-NiO-CuO-ZnO-Fe2O3계를 기본 조성으로 하고 그 조성에 H3BO3, Ca(OH)2를 첨가한 엔티시 조성물 및 그 제조 방법에 관한 것이다.일반적으로 NTC 써미스터는 온도가 증가함에 따라 저항이 비 직선적으로 감소하는 특성을 가진 소자로서 저항-온도 특성을 이용한 화재 감지기, 산업용 기기, OA 기기, 의료기기, 주방 기기 등의 온도 검출용 센서와 각종 전자기기 전자회로의 온도 보상용 소자로서 광범위하게 이용된다. 또한 최근에는 안정된 전원을 요구되는 전자기기가 많아짐에 따라 SMPS(Switch Mode Power Supply)와 같은 별도의 전원단이 필요하게 되고 초기 전원 투입시 평상 전류에 10배 이상이 되는 돌입 전류가 발생하게 된다. 따라서 이와 같은 돌입 전류를 제한하기 위하여 돌입 전류 제한용 엔티시 써미스타가 사용되고 있다. 종래의 엔티시 써미스타는전이 금속산화물인 스핀넬구조로서 3성분계인 Mn-Ni-Co계, 4성분계인 Mn-Ni-Co-Cu계와 Fe, Cr등을 포함시킨 조성물이 많이 사용되어 왔다. 이러한 조성들은 스핀넬구조를 형성함에 따라 넓은 상온저항과 온도에 따른 저항 변화율(B 정수)의 다양성으로 그 응용 범위가 다양하기는 하나 Co 및 Ni의 가격이 매우 높기 때문에 제조 비용면에서 불리한 단점을 가지고있으며 소성 후 구조적으로 분상(Solid Solution)이 형성되어 소성조건 및 원료 제조공정에서의 불순물 혼입에 따라 매우 민감하게 변화되어 대량 양산시 재현성이 떨어지는 문제점이 있다.또한, 상기의 조성물을 이용한 엔티시 써미스터의 제조방법에 대하여 설명하면 원료 분말을 칭량 한 후 볼 밀과 같은 혼합기를 이용하여 혼합한 후 800 ∼ 1200℃에서 2∼4시간 시간 하소한다. 하소한 분말을 볼 밀을 이용하여 재 분쇄한 후 PVA와 같은 결합제를 이용하여 과립을 만 든 후 1 ∼ 2 [ton/cm2]의 압력으로 성형한다. 성형 시편을 1200 ∼ 1400℃에서 소성 한 후 은(Ag) 전극을 형성하여 600∼800℃에서 10분간 열처리하여 엔티시 써미스터를 제작한다.그러나 상기의 제조 공정은 고 정밀도이면서도 고 신뢰성, 소형화된 제품에서는 높은 신뢰성을 주지만 돌입 전류제한용으로 이용되는 소자의 경우 소자당 원료가 많이 소요되므로서 원료 준비 공정이 고가이면 전체 소자의 단가가 비싸지는 문제점이 있다.When entity which acts as element for the inrush current limiting and temperature detection (NTE: Negative Temperature Coefficient below entity Shirakawa quot;) relates to a composition and a method for manufacturing a thermistor More specifically Mn 3 O 4 -Co 3 O 4 -NiO-CuO An ethic composition comprising -ZnO and Mn 3 O 4 -Co 3 O 4 -NiO-CuO-ZnO-Fe 2 O 3 as a basic composition and H 3 BO 3 , Ca (OH) 2 is added to the composition, and In general, NTC thermistor is a device whose resistance decreases non-linearly with increasing temperature.It is a fire detector, an industrial device, an OA device, a medical device, and a kitchen device using resistance-temperature characteristics. It is widely used as a temperature detection sensor and a temperature compensation element of various electronic circuits. In addition, as more electronic devices require stable power in recent years, a separate power stage such as a switch mode power supply (SMPS) is required, and an inrush current that is 10 times or more than the normal current occurs when the initial power is turned on. Therefore, in order to limit the inrush current, the inrush current limiting thermistor is used. Conventional anti-thermistor has been used a lot of compositions containing a three-component Mn-Ni-Co, four-component Mn-Ni-Co-Cu system and Fe, Cr, etc. as a spinel structure of a transition metal oxide . These compositions have a wide range of room temperature resistance and a variety of resistance change rate (B constant) according to the spinel structure, but the range of application varies, but the price of Co and Ni is very high. After firing, a structurally solid solution is formed and changes very sensitively depending on the firing conditions and the incorporation of impurities in the raw material manufacturing process, resulting in inferior reproducibility in mass production. In the following description, the raw material powder is weighed and then mixed using a mixer such as a ball mill, and then calcined at 800 to 1200 ° C. for 2 to 4 hours. The calcined powder is regrind using a ball mill and then granulated using a binder such as PVA, and then molded at a pressure of 1 to 2 [ton / cm 2 ]. The molded specimens are calcined at 1200 to 1400 ° C., silver (Ag) electrodes are formed, and heat treated at 600 to 800 ° C. for 10 minutes to produce an thermistor. In the case of high reliability, the device used for limiting the inrush current requires a lot of raw materials per device, and if the raw material preparation process is expensive, the cost of the entire device is expensive.
본 발명은 돌입 전류제한용에 이용되는 엔티시 써미스타를 저 가격으로 만들기 위해 제조 공정적 측면에서는 하소 공정을200 ∼ 400℃에서의 단순 열처리 공정을 적용하고 소성 온도의 경우 산화 니켈(NiO)의 일부를 산화 철(Fe2O3) 및 산화 아연(ZnO)로 치환하여 1020℃ ∼ 1080℃로 저온 소성하였다. 조성물의 측면에서는 조성물의 원가를 줄이기 위해 고가의 산화코발트(Co3O4)를 5 중량% 이하로 하면서 산화 니켈(NiO)을 값싼 산화망간(Mn3O4), 산화 철(Fe2O3), 산화 아연(ZnO)으로 대체한 조성물과 그 조성물에 H3BO3, Ca(OH)2를 첨가하여 액상 소성을 유도하여 대량 생산시 공정에서 유입 될 수 있는 불순물의 영향을 최소화 할 수 있는 조성물에 관한 것이다. 상기의 결과를 이용하면 소자당 원료가 많이 소요되는 돌입 전류제한용 엔티시 써미스타를 저 가격 및 고 신뢰성으로 만들 수 있는 장점이 있다The present invention applies a simple annealing process at 200-400 ° C. in terms of manufacturing process in order to make the antithesis thermistor used for inrush current limiting at a low price. A part was replaced with iron oxide (Fe 2 O 3 ) and zinc oxide (ZnO) and calcined at 1020 ° C. to 1080 ° C. at low temperature. In terms of the composition, in order to reduce the cost of the composition, expensive manganese oxide (Mn 3 O 4 ) and iron oxide (Fe 2 O 3 ) containing nickel oxide (NiO) and less than 5% by weight of expensive cobalt oxide (Co 3 O 4 ) ) And H 3 BO 3 and Ca (OH) 2 are added to the composition replaced with zinc oxide (ZnO) to induce liquid phase sintering, thereby minimizing the influence of impurities that may enter the process during mass production. It relates to a composition. Using the above results, there is an advantage that the incidence current limiting thermistor for inrush current limiting, which requires a lot of raw materials per device, can be made at low cost and high reliability.
본 발명은 돌입 전류제한용에 이용되는 엔티시 써미스타를 제조하는 과정에서 하소 공정을 200 ∼ 400℃에서의 단순 열처리 공정을 적용하고 소성 온도의 경우 산화 니켈(NiO)의 일부를 산화 철(Fe2O3) 및 산화 아연(ZnO)로 치환하여 1020℃ ∼ 1080℃로 저온 소성하므로 제조비용을 절감하는데 그 목적이 있다.본 발명의 목적은 기존에 사용하던 고가의 산화코발트(Co3O4)를 5wt%이하로 하면서 산화 니켈(NiO)을 값싼 산화망간(Mn3O4)과 산화 철(Fe2O3), 산화 아연(ZnO)등으로 대체함으로써 원료비용을 절감하고, H3BO3, Ca(OH)2를 첨가하여 액상 소성을 유도하여 대량 생산시 공정에서 유입 될 수 있는 불순물의 영향을 최소화 할 수 있는데 있다.본 발명의 상기 기타 목적은,Co3O45.0 중량%, NiO 15.0 중량%, CuO 13 중량%에, Mn3O439 ∼ 57 중량%, ZnO 10 ∼ 28 중량%와, H3BO3, Ca(OH)2중 어느 하나 혹은 둘을 1 ∼ 10 중량% 첨가 하여서 된 것과,Co3O45.0 중량%, CuO 13 중량%에, Mn3O439 ∼ 57 중량%, ZnO 10 ∼ 28 중량%, NiO 0 ∼ 15 중량%, Fe2O30 ∼ 15와, H3BO3, Ca(OH)2중 어느 하나 혹은 둘을 1 ∼ 10 중량% 첨가하여서 된 것과,Co3O4와 NiO등을 칭량하여 혼합기로 혼합하고, 혼합물을 2∼4시간 하소하여 분말을 얻으며, 하소분말을 재분쇄한 후 결합재를 첨가하여 일정한 크기의 성형시편을 형성하고 성형시편을 소성한 후 은(Ag) 전극을 형성하여 열처리하는 방법에 있어서,상기 하소 공정은 200 ∼ 400℃로 열처리를 하는 것을 포함하는 엔티시 써미스타의 조성물의 제조 방법에 의해 달성된다.In the present invention, the calcination process is applied to a simple heat treatment process at 200 to 400 ° C. in the process of manufacturing the anti-thermistor used for inrush current limiting. 2 O 3 ) and zinc oxide (ZnO) is replaced by low temperature firing at 1020 ° C. to 1080 ° C., thereby reducing manufacturing costs. An object of the present invention is to use expensive cobalt oxide (Co 3 O 4). ), by, while less than 5wt% replaced by the inexpensive manganese oxide, nickel oxide (NiO) (Mn 3 O 4 ) and iron (Fe 2 O 3 oxide), zinc oxide (ZnO), such as lower raw material costs, and H 3 BO 3 , Ca (OH) 2 can be added to induce liquid phase calcination to minimize the influence of impurities that can be introduced in the process during mass production. The other object of the present invention, Co 3 O 4 5.0% by weight, NiO to 15.0 wt%, 13 wt% of CuO, Mn 3 O 4 and 39 ~ 57% by weight, ZnO 10 ~ 28 weight%, H 3 1-10% by weight of any one or two of BO 3 and Ca (OH) 2 , and 5.0% by weight of Co 3 O 4 , 13% by weight of CuO, 39-57% by weight of Mn 3 O 4 , ZnO 10 28 wt%, NiO 0-15 wt%, Fe 2 O 3 0-15 and H 3 BO 3 , Ca (OH) 2 or any one or two of the addition of 1 to 10 wt% added, Co 3 O 4 and NiO, etc. are weighed and mixed with a mixer, and the mixture is calcined for 2 to 4 hours to obtain a powder. The calcined powder is regrind and a binder is added to form a molded specimen of a certain size, and the molded specimen is calcined. (Ag) In the method of forming and heat-treating an electrode, the said calcination process is achieved by the manufacturing method of the composition of the anti-thermistor which includes heat-processing at 200-400 degreeC.
본 발명의 금속 산화물계 재료의 조성은 표 1과 같으며 주 조성은 Co3O45.0 중량%, NiO 15.0 중량%, CuO 13 중량%에 Mn3O439 ∼ 57 중량%, ZnO 10 ∼ 28 중량%를 첨가하여서 된 조성물과 Co3O45.0 중량%, CuO 13 중량%에 Mn3O439 ∼ 57 중량%, ZnO 10 ∼ 28 중량%, NiO 0 ∼ 15 중량%, Fe2O30 ∼ 15중량%를 첨가하여서 된 조성물이다. 또한 상기 기본 조성 각각에 H3BO31 ∼ 10 중량% 첨가한 조성과 Ca(OH)21 ∼ 10 중량% 첨가한 조성물 및 H3BO3, Ca(OH)2를 1 ∼ 10 중량% 첨가한 조성물이다.제조 방법은 표 1의 조성을 평량한 후 순수물과 지르코니아 볼을 이용하여 24시간 볼 밀로 혼합, 분쇄하였다. 분말의 건조와 병행하여 상기 발명의 특징인 단순 열처리 공정을 200 ∼ 400℃에서 24시간 행하였으며 건조된 분말에 결합제로 PVA를 1.5 중량% 첨가하여 200메쉬(mesh)체로 체가름한 후 지름 15[mm]의 원형 금형을 이용하여 1.5 [ton/cm2]의 압력으로 성형하였다. 성형 시편은 승온 및 하강 속도를 300℃/hr로 하였으며 결합제와 유기물을 완전히 휘발시키기 위하여 600℃에서 2시간 유지한 후 1020 ∼ 1080℃의 소성 온도에서 2시간 동안 유지하였다. 이후, 소성체 양면에 은(Ag) 페이스트를 스크린 인쇄하여 전극을 형성하며 700℃에서 10분간 열처리하고 24시간 방치한 후 전기적 특성을 측정하였다. 시편의 전기적 특성은 25℃와 85℃로 유지된 온도 챔버에서 2단자법을 통해 측정하였으며 비저항 ρ25와 B 정수는 다음과 같은 식에 의해 계산된다.The composition of the metal oxide material of the present invention is shown in Table 1, the main composition is Mn 3 O 4 39-57 wt%, ZnO 10-28 in 5.0 wt% Co 3 O 4 , 15.0 wt% NiO, 13 wt% CuO To the composition obtained by adding the weight%, 5.0% by weight of Co 3 O 4 , 39 to 57% by weight of Mn 3 O 4 , 10 to 28% by weight of ZnO, 0 to 15% by weight of NiO, Fe 2 O 3 0 It is a composition obtained by adding 15 weight%. In addition, 1 to 10% by weight of H 3 BO 3, 10 to 10% by weight of Ca (OH) 2, and 1 to 10% by weight of H 3 BO 3 and Ca (OH) 2 were added to each of the basic compositions. In the manufacturing method, the composition shown in Table 1 was weighed and mixed and pulverized with a ball mill for 24 hours using pure water and zirconia balls. In parallel with the drying of the powder, a simple heat treatment process, which is a feature of the present invention, was performed for 24 hours at 200 to 400 ° C., and 1.5 parts by weight of PVA was added as a binder to the dried powder and sieved through a 200 mesh sieve to obtain a diameter of 15 [ mm] was used to mold at a pressure of 1.5 [ton / cm < 2 >]. The molded specimen was heated and lowered at a rate of 300 ° C./hr, and maintained at 600 ° C. for 2 hours to completely volatilize the binder and organics, and then maintained at a firing temperature of 1020 to 1080 ° C. for 2 hours. Thereafter, silver (Ag) paste was screen printed on both surfaces of the fired body to form an electrode, and heat-treated at 700 ° C. for 10 minutes and left for 24 hours to measure electrical properties. The electrical properties of the specimens were measured by a two-terminal method in a temperature chamber maintained at 25 ° C and 85 ° C, and the resistivity p25 and B constants were calculated by the following equation.
표 1에 본 발명에서 얻어진 전기적 특성인 비저항과 B 정수를 나타내었으며 본 발명에 속하는 조성의 경우 비저항 (ρ25)8 ∼ 3990 [Ω-cm], B 정수 2700 ∼ 3920 얻을 수 있었다. 또한, 고가의 산화코발트(Co3O4)를 5wt%이하로 하면서 산화 니켈(NiO)을 값싼 산화망간(Mn3O4), 산화 철(Fe2O3), 산화 아연(ZnO)으로 대체한 조성물과 그 조성물에 H3BO3, Ca(OH)2를 첨가하여 제조 공정에서 발생할 수 있는 오염의 영향을 줄이고 고 신뢰성이면서 저 가격의 돌입 전류제한용 엔티시 써미스타의 제조가 가능하였다.Table 1 shows the resistivity and B constant, which are the electrical properties obtained in the present invention, and for the composition belonging to the present invention, the resistivity (ρ25) 8 to 3990 [Ω-cm] and the B constant 2700 to 3920 were obtained. In addition, it replaces expensive manganese oxide (Mn 3 O 4 ), iron oxide (Fe 2 O 3 ), zinc oxide (ZnO) with less than 5wt% of expensive cobalt oxide (Co 3 O 4 ). H 3 BO 3 , Ca (OH) 2 was added to the composition and the composition to reduce the effects of contamination that may occur in the manufacturing process and to produce a highly reliable and low-cost incidence thermistor for inrush current limiting.
표 1.Table 1.
상술한 바와 같이, 본 발명은 돌입 전류제한용으로 이용되는 엔티시 써미스타의 조성물 및 제조 방법에 관한 것으로 엔티시 써미스타의 조성물에서 조성물의 원가를 줄이기 위해 고가의 산화코발트(Co3O4)를 5wt%이하로 하면서 산화 니켈(NiO)을 값싼 산화망간(Mn3O4), 산화 철(Fe2O3), 산화 아연(ZnO)으로 대체한 조성물과 그 조성물에 H3BO3, Ca(OH)2를 첨가하여 대량 생산시 공정에서 유입 될 수 있는 불순물의 영향을 최소화 할 수 있는 조성물에 관한 것이다. 또한, 상기 조성으로 엔티시 써미스타 제조시 하소 공정(Calcination)을 제조 원가를 낮추면서도 우수한 전기적 특성을 얻기 위하여 200 ∼ 400℃의 저온 열처리한 후 소성 온도 1020℃ ∼ 1080℃로 소성하여 고 신뢰성이면도 가격이 저렴하여 경제성 있는 전류제한용 엔티시 써미스타의 제조가 가능한 유용한 발명인 것이다.As described above, the present invention relates to a composition and a method of manufacturing the anti-thermistor used for inrush current limiting to reduce the cost of the composition in the composition of the anti-thermistor (Co 3 O 4 ) Is less than 5wt% and replaced with cheap manganese oxide (Mn 3 O 4 ), iron oxide (Fe 2 O 3 ), zinc oxide (ZnO) and nickel oxide (NiO) in the composition and H 3 BO 3 , Ca (OH) 2 relates to a composition that can minimize the effect of impurities that can be introduced in the process during mass production. In addition, in order to obtain excellent electrical properties while lowering the manufacturing cost in the calcining process of manufacturing the antic thermista with the above composition, it is calcined at a firing temperature of 1020 ° C to 1080 ° C after high temperature heat treatment at 200 to 400 ° C. In addition, it is a useful invention that can produce an economical current limiting thermistor for current limiting inexpensive.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02121303A (en) * | 1988-10-31 | 1990-05-09 | Tdk Corp | Manufacture of ntc thermistor element |
| KR930006337A (en) * | 1991-09-06 | 1993-04-21 | 타카다 요시유키 | Rodless cylinder |
| JPH0869903A (en) * | 1994-08-30 | 1996-03-12 | Tokin Corp | Manufacture of ntc thermistor |
| JPH10233303A (en) * | 1996-09-30 | 1998-09-02 | Mitsubishi Materials Corp | Ntc thermistor |
| KR19980063182A (en) * | 1996-12-30 | 1998-10-07 | 서두칠 | Manufacturing Method of NTC Thermistor |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02121303A (en) * | 1988-10-31 | 1990-05-09 | Tdk Corp | Manufacture of ntc thermistor element |
| KR930006337A (en) * | 1991-09-06 | 1993-04-21 | 타카다 요시유키 | Rodless cylinder |
| JPH0869903A (en) * | 1994-08-30 | 1996-03-12 | Tokin Corp | Manufacture of ntc thermistor |
| JPH10233303A (en) * | 1996-09-30 | 1998-09-02 | Mitsubishi Materials Corp | Ntc thermistor |
| KR19980063182A (en) * | 1996-12-30 | 1998-10-07 | 서두칠 | Manufacturing Method of NTC Thermistor |
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