KR100329751B1 - Method for forming oxide layer using porous silicon layer - Google Patents

Method for forming oxide layer using porous silicon layer Download PDF

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KR100329751B1
KR100329751B1 KR1019950050959A KR19950050959A KR100329751B1 KR 100329751 B1 KR100329751 B1 KR 100329751B1 KR 1019950050959 A KR1019950050959 A KR 1019950050959A KR 19950050959 A KR19950050959 A KR 19950050959A KR 100329751 B1 KR100329751 B1 KR 100329751B1
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porous silicon
silicon film
film
oxide film
layer
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KR1019950050959A
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Korean (ko)
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KR970052812A (en
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엄금용
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주식회사 하이닉스반도체
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02307—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a liquid

Abstract

PURPOSE: A method for forming an oxide layer using a porous silicon layer is provided to be capable of growing a superior thick oxide layer. CONSTITUTION: A porous silicon layer having a pore of 50-56% is formed on a surface of a silicon wafer by applying electric field to the silicon wafer dipped in HF:C2H5OH:H2O solutions. The porous silicon layer is treated with BOE(Buffered Oxide Etchant) solution, such as NH4:HF. An oxide layer is formed on the silicon wafer by oxidizing the porous silicon layer at a low temperature of 310-650°C. The thickness of the porous silicon layer is 40-50 micrometer.

Description

다공질 실리콘막을 이용한 산화막 제조방법Oxide film production method using porous silicon film

본 발명은 다공질 실리콘막(porous silicon layer)을 이용한 산화막 제조방법에 관한 것으로, 특히 소자간의 우수한 전기적 절연특성과 접합영역의 감소에 의한 집적도 개선 및 우수한 특성을 갖는 두꺼운 산화막을 재현성 있게 성장시킬 수 있는 다공질 실리콘막을 이용한 산화막 제조방법에 관한 것이다.The present invention relates to a method for producing an oxide film using a porous silicon layer, and in particular, it is possible to reproducibly grow a thick oxide film having excellent characteristics and excellent electrical insulating properties between the devices and integration density by reducing the junction area. An oxide film production method using a porous silicon film.

소자의 집적도가 증가함으로서 이제까지는 문제시되지 않았던 소프트 에러방지(Soft error immunity) 및 래치업 민감도(latch up susceptibility), 핫 캐리어 발생( hot carrier generation) 등의 문제가 주요한 생산성 저하의 원인이 되고 있으며, 이러한 근본원인은 실리콘 웨이퍼 자체가 가지고 있는 높은 도전성과 고온에서의 성장 메카니즘(mechanism)에 의하여 생성되는 웨이퍼 표면의 결함 특성에 의한 영향이 소자의 불량을 유발하는 문제점으로 대두되고 있었다.As the integration of devices increases, problems such as soft error immunity, latch up susceptibility, and hot carrier generation, which have not been a problem until now, are the major causes of productivity degradation. This root cause has been a problem that the defect caused by the defect characteristics of the wafer surface generated by the high conductivity of the silicon wafer itself and the growth mechanism (mechanism) at high temperature has caused the defect of the device.

따라서, 상기 문제점을 해결하기 위하여 안출된 본 발명은 양질의 두꺼운 산화막을 성장시킬 수 있는 다공질 실리콘막을 이용한 산화막 제조방법을 제공하는데 그 목적이 있다.Accordingly, an object of the present invention is to provide an oxide film production method using a porous silicon film capable of growing a thick oxide film of good quality.

상기 목적을 달성하기 위하여 본 발명은, 다공질 실리콘막을 이용한 산화막 제조방법에 있어서, HF:C2H5OH:H2O 용액을 사용하여 실리콘 웨이퍼의 표면에 50∼56%의 기공을 갖는 다공질 실리콘막을 형성하는 제 1 단계; 완전한 기공을 갖는 다공질 실리콘막을 형성하기 위하여 상기 다공질 실리콘막을 BOE(NH4:HF)용액으로 처리하는 제 2 단계; 및 상기 제2단계가 완료된 상기 다공질 실리콘막을 저온에서 산화시켜 산화막을 형성하는 제 3 단계를 포함하여 이루어지는 것을 특징으로 한다.In order to achieve the above object, the present invention, in the method for producing an oxide film using a porous silicon film, porous silicon having a pore of 50 to 56% on the surface of the silicon wafer using a HF: C 2 H 5 OH: H 2 O solution A first step of forming a film; A second step of treating the porous silicon film with a BOE (NH 4 : HF) solution to form a porous silicon film having complete pores; And a third step of forming an oxide film by oxidizing the porous silicon film having the second step completed at a low temperature.

이하, 첨부된 도면을 참조하여 본 발명을 상세히 설명하면 다음과 같다.Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

먼저, 제 1 도와 같이 HF:C2H5OH:H2O=1∼4:1:1의 용액을 담고 있는 수조에 백금전극(2,3)을 형성하고 이 백금전금(2,3) 사이에 Si 웨이퍼(1)를 설치하여 8∼15분 반응시키면, 40∼50μm의 정도의 깊이에서 50∼56%의 기공을 갖는 다공질 실리콘막이 제 2 도와 같이 형성된다. 이때 이후의 산화 공정에서 양질의 산화막을 형성하기 위하여는 HF의 순도를 20∼48%로 하는 것이 바람직하다.First, as shown in the first diagram, a platinum electrode (2,3) is formed in a bath containing a solution of HF: C 2 H 5 OH: H 2 O = 1 to 4: 1: 1, and this platinum deposit (2,3) is formed. When the Si wafer 1 is provided in between and reacted for 8 to 15 minutes, a porous silicon film having 50 to 56% of pores at a depth of about 40 to 50 µm is formed like the second degree. At this time, in order to form a high quality oxide film in the subsequent oxidation process, it is preferable to make the purity of HF 20 to 48%.

또한, HF:C2H5OH:H2O=1∼4:1:1로 하여야 이후의 산화공정에서 실리콘 벌크(bulk)의 부피 팽창 및 스트레스를 방지할 수 있다.In addition, HF: C 2 H 5 OH: H 2 O = 1 to 4: 1: 1 to prevent the volume expansion and stress of the bulk of the silicon (bulk) in the subsequent oxidation process.

이어서, 상기 형성된 다공질 실리콘막을 BOE(NH4:HF=5:1)용액을 사용하여 다시 식각하면 제 3 도와 같이 완전한 기공을 갖는 다공질 실리콘막이 형성되게 된다.Subsequently, when the formed porous silicon film is etched again using a BOE (NH 4 : HF = 5: 1) solution, a porous silicon film having complete pores is formed as shown in FIG. 3.

이렇게 형성된 다공질 실리콘막을 310∼650℃의 저온에서 산화시키면 상기 다공질 실리콘막은 급격히 산화되어 제 4 도와 같이 완전한 실리콘 벌크(silicon bulk)와 같은 표면을 갖는 양질의 산화막이 형성된다.When the porous silicon film thus formed is oxidized at a low temperature of 310 to 650 ° C., the porous silicon film is rapidly oxidized to form a high quality oxide film having a surface such as a complete silicon bulk as in the fourth degree.

상기와 같이 이루어지는 본 발명은 고집적회로에서의 소프트 에러, 핫 캐리어 발생, 실리콘 표면에서의 결함을 방지하면서 산화막을 형성할 수 있어 반도체 소자의 신뢰도를 향상시킬 수 있는 효과가 있다.According to the present invention, the oxide film can be formed while preventing soft errors, hot carriers, and defects on the silicon surface in the integrated circuit, thereby improving the reliability of the semiconductor device.

제 1 도는 본 발명에 따른 다공질 실리콘막 형성을 위한 반응구조물의 개략도,1 is a schematic view of a reaction structure for forming a porous silicon film according to the present invention,

제 2 도는 제 1 도의 반응구조물에 의해 형성된 다공질 실리콘막의 단면도,2 is a cross-sectional view of the porous silicon film formed by the reaction structure of FIG.

제 3 도는 제 2 도의 다공질 실리콘막을 BOE 용액으로 처리한 단면도,3 is a cross-sectional view of the porous silicon film of FIG. 2 treated with a BOE solution,

제 4 도는 다공질 실리콘막을 산화시킨 후의 실리콘 웨이퍼 단면도.4 is a cross-sectional view of a silicon wafer after oxidizing the porous silicon film.

* 도면의 주요 부분에 대한 부호의 설명* Explanation of symbols for the main parts of the drawings

1 : Si 웨이퍼 2,3 : 백금전극1 Si wafer 2,3 Platinum electrode

4 : 수조4: tank

Claims (8)

다공질 실리콘막을 이용한 산화막 제조방법에 있어서,In the oxide film production method using a porous silicon film, HF:C2H5OH:H2O 용액에 담겨진 실리콘 웨이퍼에 전계를 걸어 웨이퍼 표면에 50∼56%의 기공을 갖는 다공질 실리콘막을 형성하는 제1단계;A first step of forming an porous silicon film having 50 to 56% of pores on the surface of the wafer by applying an electric field to the silicon wafer contained in the HF: C 2 H 5 OH: H 2 O solution; 완전한 기공을 갖는 다공질 실리콘막을 형성하기 위하여 상기 다공질 실리콘막을 BOE(NH4:HF)용액으로 처리하는 제2단계; 및Treating the porous silicon film with a BOE (NH 4 : HF) solution to form a porous silicon film having complete pores; And 상기 제2단계가 완료된 다공질 실리콘막을 저온에서 산화시켜 산화막을 형성하는 제 3 단계를 포함하여 이루어지는 것을 특징으로 하는 다공질 실리콘막을 이용한 산화막 제조방법.And a third step of forming an oxide film by oxidizing the porous silicon film having the second step completed at a low temperature. 제 1 항에 있어서,The method of claim 1, 상기 HF:C2H5OH:H2O 용액은 1∼4:1:1인 것을 특징으로 하는 다공질 실리콘막을 이용한 산화막 제조방법.The HF: C 2 H 5 OH: H 2 O solution is a method of producing an oxide film using a porous silicon film, characterized in that 1 to 4: 1: 1. 제 1 항에 있어서,The method of claim 1, 상기 제 1 단계에서 형성되는 상기 다공질 실리콘막의 두께는 40∼50μm인 것을 특징으로 하는 다공질 실리콘막을 이용한 산화막 제조방법.The thickness of the porous silicon film formed in the first step is 40 to 50μm oxide film manufacturing method using a porous silicon film, characterized in that. 제 1 항에 있어서,The method of claim 1, 상기 제 1 단계에서 형성되는 상기 다공질 실리콘막의 다공질화는 50∼56%인 것을 특징으로 하는 다공질 실리콘막을 이용한 산화막 제조방법.The porous film of the porous silicon film formed in the first step is a method for producing an oxide film using a porous silicon film, characterized in that 50 to 56%. 제 1 항에 있어서,The method of claim 1, 상기 HF의 순도는 20∼48%인 것을 특징으로 하는 다공질 실리콘막을 이용한 산화막 제조방법.The purity of the HF is 20 to 48% oxide film manufacturing method using a porous silicon film, characterized in that. 제 1 항에 있어서,The method of claim 1, 상기 제 1 단계의 다공질 실리콘막의 형성시간은 8∼15분인 것을 특징으로 하는 다공질 실리콘막을 이용한 산화막 제조방법.Forming time of the porous silicon film of the first step is an oxide film manufacturing method using a porous silicon film, characterized in that 8 to 15 minutes. 제 1 항에 있어서,The method of claim 1, 상기 제 2 단계의 BOE용액 NH4:HF은 5:1인 것을 특징으로 하는 다공질 실리콘막을 이용한 산화막 제조방법.The BOE solution NH 4 : HF of the second step is 5: 1 method of producing an oxide film using a porous silicon film. 제 1 항에 있어서,The method of claim 1, 상기 제 3 단계의 다공질 실리콘막 산화온도는 310∼650℃인 것을 특징으로 하는 다공질 실리콘막을 이용한 산화막 제조방법.The oxide film production method using the porous silicon film, characterized in that the oxidation temperature of the porous silicon film of the third step is 310 ~ 650 ℃.
KR1019950050959A 1995-12-16 1995-12-16 Method for forming oxide layer using porous silicon layer KR100329751B1 (en)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0410419A (en) * 1990-04-26 1992-01-14 Matsushita Electron Corp Manufacture of semiconductor device
JPH0536669A (en) * 1991-07-30 1993-02-12 Nippondenso Co Ltd Manufacture of semiconductor device
KR940001251A (en) * 1992-06-03 1994-01-11 이종현 Homogeneity Improvement Method of Porous Silicon
KR950020963A (en) * 1993-12-24 1995-07-26 손병기 Manufacturing Method of Semiconductor Device Using Porous Silicon
KR970013099A (en) * 1995-08-04 1997-03-29 손병기 How to selectively form a thick oxide film on the substrate

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0410419A (en) * 1990-04-26 1992-01-14 Matsushita Electron Corp Manufacture of semiconductor device
JPH0536669A (en) * 1991-07-30 1993-02-12 Nippondenso Co Ltd Manufacture of semiconductor device
KR940001251A (en) * 1992-06-03 1994-01-11 이종현 Homogeneity Improvement Method of Porous Silicon
KR950020963A (en) * 1993-12-24 1995-07-26 손병기 Manufacturing Method of Semiconductor Device Using Porous Silicon
KR970013099A (en) * 1995-08-04 1997-03-29 손병기 How to selectively form a thick oxide film on the substrate

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