KR100328837B1 - Semiconductor rapid thermal process - Google Patents
Semiconductor rapid thermal process Download PDFInfo
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- KR100328837B1 KR100328837B1 KR1019990043494A KR19990043494A KR100328837B1 KR 100328837 B1 KR100328837 B1 KR 100328837B1 KR 1019990043494 A KR1019990043494 A KR 1019990043494A KR 19990043494 A KR19990043494 A KR 19990043494A KR 100328837 B1 KR100328837 B1 KR 100328837B1
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 19
- 238000000034 method Methods 0.000 title description 2
- 238000009792 diffusion process Methods 0.000 claims abstract description 65
- 238000010438 heat treatment Methods 0.000 claims abstract description 24
- 235000012431 wafers Nutrition 0.000 abstract description 41
- 239000013078 crystal Substances 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 238000011068 loading method Methods 0.000 abstract description 5
- 230000005856 abnormality Effects 0.000 abstract description 3
- 239000000463 material Substances 0.000 description 4
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- 238000010884 ion-beam technique Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
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Abstract
본 발명은 반도체 확산장치에 관한 것으로서, 종래의 반도체 확산장치는 상기 챔버의 내측에 한개의 웨이퍼 만이 수평으로 장착되므로 생산능력이 저조하였으며, 확산가스의 흐름이 수평으로 형성되어 유동이 원활하지 못하였고, 확산공정이 장시간 소요되므로 챔버내의 온도 및 확산가스의 상태가 변화되어 로트내에서 뿐만아니라 로트별로 품질특성이 불균일하고, 급격한 온도변화에 의하여 슬립 및 전위 등의 결정격자이상이 발생되는 문제점이 있었으나, 본 발명은 상,하부에 확산가스가 출입되는 유입구 및 배출구를 설치하고, 내측에는 웨이퍼를 수직으로 장착하는 웨이퍼고정구가 설치된 챔버를 방사상으로 다수개 설치하고, 가열부를 각 챔버의 사이에 다수개 설치함으로써, 다수개의 웨이퍼를 일회의 확산공정으로 작업하여 생산능력이 향상되고, 수직로딩방식에 의하여 확산가스의 흐름이 상하로 형성되어 확산가스의 유동이 원활히 유지되는 한편, 확산공정의 소요시간이 감소되어 챔버내의 온도 및 확산가스의 상태가 매우 적게 변화되므로 로트내에서 뿐만아니라 로트별로 품질특성이 균일하고, 급격한 온도변화가 감소되어 슬립 및 전위 등의 결정격자변형이 감소되는 효과가 있다.The present invention relates to a semiconductor diffusion device, and the conventional semiconductor diffusion device has a low production capacity because only one wafer is mounted horizontally inside the chamber, and the flow of the diffusion gas is formed horizontally so that the flow is not smooth. As the diffusion process takes a long time, the temperature in the chamber and the state of the diffusion gas are changed, so that not only the lot but also the quality characteristics of each lot are uneven, and there is a problem that crystal lattice abnormalities such as slip and dislocation occur due to rapid temperature change. In the present invention, the upper and lower inlet and outlet openings for the diffusion gas is installed, and a plurality of radially installed on the inside of the wafer fixing device for mounting the wafer vertically installed on the inside, a plurality of heating units between each chamber By installing multiple wafers in one diffusion process, production capacity is improved. The flow of the diffusion gas is maintained up and down by the vertical loading method, so that the flow of the diffusion gas is maintained smoothly, while the time required for the diffusion process is reduced, so that the temperature in the chamber and the state of the diffusion gas are changed very little. In addition, the quality characteristics are uniform for each lot, and the rapid temperature change is reduced, thereby reducing the crystal lattice deformation such as slip and dislocation.
Description
본 발명은 반도체 확산장치에 관한 것으로서, 보다 상세하게는 슬립 및 전위와 같은 결정격자의 변화없이 다수개의 웨이퍼에 대하여 확산공정을 수행할 수 있는 반도체 확산장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor diffusion device, and more particularly, to a semiconductor diffusion device capable of performing a diffusion process on a plurality of wafers without changing a crystal lattice such as slip and dislocation.
일반적으로 확산(DIFFUSION)이란 입자의 농도차에 의하여 그 입자의 농도가 높은 쪽에서 낮은 쪽으로 퍼지는 현상을 말하며, 반도체 제조공정에서는 웨이퍼 등과 같은 부분에 필요로 하는 물질을 주입시키는 방법으로 이용되고 있는 바, 이는 웨이퍼가 적재되어 있는 고온의 전기로에 가스상태의 물질을 흘려 웨이퍼의 표면에 증착하거나, 이온주입기(Ion Implanter)를 이용하여 주입하고자 하는 물질을 이온화하여 고에너지 이온빔으로 가속시켜 웨이퍼로 주입한 후, 고온의 열처리에 의하여 상기 물질을 웨이퍼의 내부로 침투시키는 방법으로 이루어진다.In general, diffusion refers to a phenomenon in which the concentration of particles spreads from the high side to the low side due to the difference in concentration of the particles. In the semiconductor manufacturing process, a material used to inject a material into a portion such as a wafer is used. It is deposited on the surface of the wafer by flowing a gaseous substance into the high temperature electric furnace on which the wafer is loaded, or by ionizing the material to be injected by using an ion implanter and then injecting it into the wafer by accelerating it with a high energy ion beam. By the high temperature heat treatment, the material is penetrated into the wafer.
한편, 반도체 확산장치(RAPID THERMAL PROCESS)란 상기 확산공정중 고온의 열처리가 수행되는 장비로서, 도 1에서는 종래에 일반적으로 사용되고 있는 상기 장치의 개요도를 도시하고 있다.On the other hand, the semiconductor diffusion device (RAPID THERMAL PROCESS) is a device that is subjected to a high temperature heat treatment during the diffusion process, Figure 1 shows a schematic diagram of the device generally used in the prior art.
상기 반도체 확산장치는 도시된 바와 같이, 내측에 웨이퍼(W)가 트랜스퍼(미도시)에 의하여 수평으로 장착되며 그 일측에 확산용 확산가스를 출입시키는 확산가스 유입구(1a)와 그 타측에 미확산가스 배출구(1b)가 형성되어 있는 챔버(1)와, 상기 챔버(1)의 외측에서 상기 확산가스와 웨이퍼(W)를 가열시키는 가열부(2)를 주요요소로 구성된다. 여기서 상기 유입구(1a)와 배출구(1b)는 수평면상에 같은 높이에 형성되는 것이다.As shown in the drawing, the semiconductor diffusion device has a wafer (W) mounted horizontally by a transfer (not shown) on the inside thereof, and a diffusion gas inlet (1a) through which the diffusion gas is introduced into and exited from one side thereof and not diffused to the other side thereof. The chamber 1 in which the gas outlet 1b is formed, and the heating part 2 which heats the said diffusion gas and the wafer W in the outer side of the said chamber 1 are comprised mainly. Here, the inlet 1a and the outlet 1b are formed at the same height on the horizontal plane.
상기와 같이 구성된 종래의 반도체 확산장치의 작용을 설명하면 다음과 같다.Referring to the operation of the conventional semiconductor diffusion device configured as described above are as follows.
먼저, 트랜스퍼(미도시)로 상기 웨이퍼(W) 한개를 수평로딩(Horizontal Loading)방식에 의하여 상기 챔버(1)의 내측에 수평으로 장착하고 확산가스를 유입구(1a)를 통하여 화살표 방향으로 공급하며 가열부(2)를 작동한다.First, one of the wafers W is horizontally mounted inside the chamber 1 by a horizontal loading method using a transfer (not shown), and the diffusion gas is supplied in the direction of the arrow through the inlet port 1a. Activate the heating section 2.
상기 공급된 확산가스는 가열부(2)의 열에 의하여 분해되어 웨이퍼(W)에 증착된 후, 고열에 의하여 상기 웨이퍼(W)의 내부로 확산되며, 미반응된 확산가스는 수평 방향으로 유동되어 배출구(1b)를 통하여 배출된다. 한편, 상기 배출구(1b)의 위치는 제조업체의 사양에 따라서 상기 유입구(1a)의 반대편인 좌측에 설치되기도 한다.The supplied diffusion gas is decomposed by the heat of the heating unit 2 and deposited on the wafer W, and then diffused into the wafer W by high heat, and the unreacted diffusion gas flows in the horizontal direction. It is discharged through the discharge port 1b. On the other hand, the position of the outlet 1b may be installed on the left side opposite to the inlet 1a according to the manufacturer's specifications.
상기와 같이 확산공정이 완료되면 웨이퍼(W)는 트랜스퍼에 의하여 챔버(1)의 외부로 반출되고 다음 웨이퍼(W)가 반입되어 동일하게 확산공정이 수행된다.When the diffusion process is completed as described above, the wafer W is carried out to the outside of the chamber 1 by the transfer, and the next wafer W is loaded and the diffusion process is performed in the same manner.
그러나, 종래의 반도체 확산장치는 상기 챔버(1)의 내측에 한개의 웨이퍼(W)만이 장착되므로 생산능력이 저조하였으며, 수평로딩방식을 채택하고 있으므로 확산가스의 흐름이 수평으로 형성되어 유동이 원활하지 못하고, 이에 따라 확산가스가 웨이퍼에 대하여 균일하게 접촉하지 않게 되어 균일한 확산이 이루어지지 않게 되는 문제점이 있었다.However, the conventional semiconductor diffusion device has low production capacity because only one wafer (W) is mounted inside the chamber (1), and since the horizontal loading method is adopted, the flow of the diffusion gas is formed horizontally so that the flow is smooth. As a result, there was a problem that the diffusion gas is not uniformly contacted with the wafer and thus the diffusion is not uniform.
또한, 하나의 챔버(1)에 대하여 이 챔버(1)를 둘러싸는 각각의 가열부(2)가 배치되는 것이므로 하나의 로트(Lot)에 대하여 약 1시간 정도 소요되는 확산공정 중에 챔버(1)내의 온도 및 확산가스의 상태가 변화되어 로트내에서 뿐만아니라 로트별로 품질특성이 불균일하고, 급격한 온도변화에 의하여 슬립 및 전위 등의 결정격자이상이 발생되는 문제점이 있었다.In addition, since each heating unit 2 surrounding the chamber 1 is disposed in one chamber 1, the chamber 1 is in a diffusion process that takes about one hour for one lot. There is a problem that the quality of the temperature and the diffusion gas in the state is changed, not only in the lot, but also in each lot, quality characteristics are uneven, and crystal lattice abnormalities such as slip and dislocation occur due to a sudden temperature change.
본 발명은 상기와 같은 종래기술의 문제점을 해결하기 위하여 안출된 것으로서, 본 발명의 목적은 다수개의 웨이퍼에 대하여 동시에 확산공정을 수행함으로써, 슬립 및 전위와 같은 결정격자의 이상없이 생산능력을 향상할 수 있는 반도체 확산장치를 제공하는 데 있다.The present invention has been made to solve the above problems of the prior art, an object of the present invention is to perform a diffusion process for a plurality of wafers at the same time, thereby improving the production capacity without abnormality of the crystal lattice such as slip and dislocation To provide a semiconductor diffusion device that can be.
도 1은 종래 반도체 확산장치의 개요도.1 is a schematic diagram of a conventional semiconductor diffusion device.
도 2a는 본 발명에 따른 반도체 확산장치의 평면도.2A is a plan view of a semiconductor diffuser in accordance with the present invention.
도 2b는 본 발명에 따른 반도체 확산장치에서 챔버의 정면도.Figure 2b is a front view of the chamber in the semiconductor diffusion device according to the present invention.
* 도면의 주요부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings
11 : 챔버 11a : 유입구11 chamber 11a inlet
11b : 배출구 12 : 가열부11b: outlet 12: heating portion
13 : 웨이퍼고정구 13a: 요입홈13 wafer fixing tool 13a: recess groove
W : 웨이퍼W: Wafer
상기 목적을 달성하기 위하여, 본 발명인 반도체 확산장치는 웨이퍼가 장착되어 확산공정이 이루어지는 챔버와, 상기 챔버의 내측을 가열시키는 가열부와, 상기 웨이퍼를 장탈하는 트랜스퍼를 포함하여 구성된 반도체 확산장치에 있어서, 상기 챔버를 방사상으로 배치되는 다수개의 챔버로 이루어지고, 각 챔버에는 하부에 확산가스 유입구가 형성되며 하부에 미확산가스 배출구가 형성되고, 상기 챔버의 내측에는 상기 웨이퍼를 수직으로 위치하도록 상측에 요입홈이 형성된 웨이퍼고정구가 설치되며, 상기 가열부는 상기 각 챔버의 사이에 배치되는 다수개 가열부로 이루어지는 것을 특징으로 한다.In order to achieve the above object, the semiconductor diffusion device of the present invention comprises a chamber in which a wafer is mounted and a diffusion process is performed, a heating unit for heating the inside of the chamber, and a transfer for removing the wafer. The chamber comprises a plurality of chambers arranged radially, each chamber is formed with a diffusion gas inlet in the lower portion and a non-diffuse gas outlet in the lower portion, the inside of the chamber in the upper side to vertically position the wafer A wafer fixing tool having a recessed groove is provided, and the heating part is formed of a plurality of heating parts disposed between the respective chambers.
이하, 본 발명의 바람직한 실시례를 첨부도면에 의거하여 설명한다.Best Mode for Carrying Out the Invention Preferred embodiments of the present invention will now be described based on the accompanying drawings.
도 2a 및 도 2b는 본 발명에 따른 반도체 확산장치의 평면도 및 챔버의 정면도로서, 도시된 바와 같이, 웨이퍼(W)가 장착되어 확산공정이 이루어지는 챔버(11)와, 상기 챔버(11)의 내측을 가열시키는 가열부(12)와, 상기 웨이퍼(W)를 장탈하는 트랜스퍼(미도시)를 포함하여 구성된 반도체 확산장치이며, 상기 챔버(11)는 하부에 확산용 확산가스가 유입되는 유입구(11a)와, 상부에는 미확산가스가 배출되는 배출구(11b)와, 내측에는 상기 웨이퍼(W)를 수직으로 위치하도록 상측에 요입홈(13a)이 형성된 웨이퍼고정구(13)로 형성되어 방사상으로 다수개 설치되며, 상기 가열부(12)는 상기 각 챔버(11)의 사이에 다수개 설치된다.2A and 2B are a plan view and a front view of a chamber of a semiconductor diffusion apparatus according to the present invention. As shown in FIG. 2, a chamber 11 in which a wafer W is mounted and a diffusion process is performed, and an inside of the chamber 11 is illustrated. And a heating unit 12 for heating the wafer and a transfer (not shown) for removing the wafer W. The chamber 11 includes an inlet 11a through which diffusion diffusion gas is introduced. ), An upper portion of the discharge port 11b through which the non-diffusion gas is discharged, and an inner side of the wafer fixing tool 13 having a recessed groove 13a formed on the upper side to vertically position the wafer W. A plurality of heating units 12 are installed between the chambers 11.
상기와 같이 구성된 본 발명에 따른 반도체 확산장치의 작용을 설명하면 다음과 같다.Referring to the operation of the semiconductor diffusion device according to the present invention configured as described above are as follows.
도 2a 및 도 2b에서, 트랜스퍼(미도시)로 상기 각각의 웨이퍼(W)를 수직로딩(Vertical Loading)방식에 의하여 방사상의 등간격으로 설치된 상기 챔버(11)의 내측으로 이동한 후, V 형상의 요입홈(13a)이 형성된 웨이퍼고정구(13)에 수직으로 장착하고 상기 확산가스를 하부에 형성된 유입구(11a)를 통하여 화살표로 표시된 상향으로 공급하며 상기 챔버(11)의 사이에 구비된 가열부(12)를 작동한다. 여기서 유입구(11a)는 하부에 형성되고 배출구(11b)는 상부에 형성되어 있으므로 확산가스는 하부의 유입부(11a)로부터 상부의 배출구(11b)를 향하여 상향 유동하게 된다.2A and 2B, after transferring each wafer W by a transfer (not shown) to the inside of the chamber 11 installed at radial equal intervals by a vertical loading method, a V shape is obtained. Vertically mounted on the wafer fixing tool 13 having the recessed groove 13a formed therein, and supplying the diffusion gas upwardly as indicated by the arrow through the inlet 11a formed at the lower portion, and a heating part provided between the chambers 11. Work 12. Since the inlet 11a is formed at the bottom and the outlet 11b is formed at the top, the diffusion gas flows upward from the inlet 11a at the bottom toward the outlet 11b at the top.
상기 공급된 확산가스는 하부에 형성된 유입구(11a)로부터 상부에 형성된 배출구(11b)를 향해 상향으로 유동하며 상기 각 챔버(11)의 양측에 설치된 가열부(12)의 고열에 의하여 분해되어 웨이퍼(W)에 증착된 후, 고열에 의하여 상기 웨이퍼(W)의 내부로 확산되며, 미반응된 확산가스는 상향으로 유동되어 배출구(11b)를 통하여 배출된다.The supplied diffusion gas flows upward from the inlet 11a formed at the lower side toward the outlet 11b formed at the upper side and is decomposed by the high heat of the heating units 12 installed at both sides of the chambers 11 to form a wafer ( After being deposited on W), it diffuses into the wafer W by high heat, and the unreacted diffusion gas flows upwardly and is discharged through the outlet 11b.
상기 확산공정이 완료되면 웨이퍼(W)는 트랜스퍼에 의하여 챔버(11)의 외부로 반출되고 다음 웨이퍼(W)가 반입되어 동일하게 확산공정이 수행된다.When the diffusion process is completed, the wafer W is carried out to the outside of the chamber 11 by a transfer, and the next wafer W is loaded and the diffusion process is performed in the same manner.
이상에서 설명한 바와 같이, 본 발명에 의한 반도체 확산장치는 상,하부에 확산가스가 출입되는 하부의 유입구 및 상부의 배출구를 설치하고, 내측에는 웨이퍼를 수직으로 장착하는 웨이퍼고정구가 설치된 챔버를 방사상으로 다수개 설치하고, 가열부를 각 챔버의 사이에 다수개 설치함으로써, 다수개의 웨이퍼를 일회의 확산공정으로 작업하여 생산능력이 향상되고, 수직로딩방식에 의하여 확산가스의 흐름이 상향으로 형성되어 확산가스의 유동이 원활하게 되고, 이에 따라 웨이퍼에 대한 확산가스의 접촉이 균일하게 이루어져 균일한 확산이 이루어지게 되는 효과가 있다.As described above, in the semiconductor diffusion apparatus according to the present invention, a chamber in which a wafer fixing tool for vertically mounting a wafer is installed radially in the upper and lower portions of the lower inlet and the upper outlet of the diffusion gas. By installing a plurality of heaters, and by installing a plurality of heating units between the chambers, the production capacity is improved by working a plurality of wafers in one diffusion process, the flow of diffusion gas is formed upward by the vertical loading method, the diffusion gas Flow is smoothly, and thus the contact of the diffusion gas to the wafer is uniform, there is an effect that the uniform diffusion is made.
또한, 다수개의 챔버를 방사상으로 형성하고, 인접하는 챔버 사이에 각각 가열부를 설치한 것이므로 하나의 가열부를 그 양측의 챔버가 공유하게 되어 양측 챔버가 균일하게 가열되게 되는 등 전체적으로 균일한 가열이 이루어지게 되고, 결과적으로 로트(Lot)에 대한 확산공정의 소요시간이 감소되어 챔버내의 온도 및 확산가스의 상태가 매우 적게 변화되므로 로트내에서 뿐만아니라 로트별로 품질특성이 균일하고, 급격한 온도변화가 감소되어 슬립 및 전위 등의 결정격자변형이 감소되는 효과가 있다.In addition, since a plurality of chambers are formed radially, and heating units are provided between adjacent chambers, one heating unit is shared by both chambers so that both chambers are uniformly heated. As a result, the time required for the diffusion process for the lot is reduced, so that the temperature in the chamber and the state of the diffusion gas are changed very little. There is an effect of reducing the crystal lattice deformation such as slip and dislocation.
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