KR100294556B1 - 불휘발성기억장치와라이트방식 - Google Patents

불휘발성기억장치와라이트방식 Download PDF

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Publication number
KR100294556B1
KR100294556B1 KR1019920023023A KR920023023A KR100294556B1 KR 100294556 B1 KR100294556 B1 KR 100294556B1 KR 1019920023023 A KR1019920023023 A KR 1019920023023A KR 920023023 A KR920023023 A KR 920023023A KR 100294556 B1 KR100294556 B1 KR 100294556B1
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KR
South Korea
Prior art keywords
memory
potential
block
source
memory cell
Prior art date
Application number
KR1019920023023A
Other languages
English (en)
Korean (ko)
Other versions
KR930015075A (ko
Inventor
나까무라야스히로
후루사와가즈노리
니시모또도시아끼
고모리가즈히로
구메히또시
Original Assignee
가나이 쓰도무
가부시끼가이샤 히다치 세이사꾸쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가나이 쓰도무, 가부시끼가이샤 히다치 세이사꾸쇼 filed Critical 가나이 쓰도무
Publication of KR930015075A publication Critical patent/KR930015075A/ko
Application granted granted Critical
Publication of KR100294556B1 publication Critical patent/KR100294556B1/ko

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
KR1019920023023A 1991-12-05 1992-12-02 불휘발성기억장치와라이트방식 KR100294556B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP34882291A JP3190082B2 (ja) 1991-12-05 1991-12-05 半導体記憶装置
JP91-348822 1991-12-05

Publications (2)

Publication Number Publication Date
KR930015075A KR930015075A (ko) 1993-07-23
KR100294556B1 true KR100294556B1 (ko) 2001-09-17

Family

ID=18399610

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920023023A KR100294556B1 (ko) 1991-12-05 1992-12-02 불휘발성기억장치와라이트방식

Country Status (2)

Country Link
JP (1) JP3190082B2 (ja)
KR (1) KR100294556B1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000132981A (ja) 1998-10-26 2000-05-12 Nec Corp 不揮発性半導体記憶装置の書込み装置とその書込み方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5065364A (en) * 1989-09-15 1991-11-12 Intel Corporation Apparatus for providing block erasing in a flash EPROM

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5065364A (en) * 1989-09-15 1991-11-12 Intel Corporation Apparatus for providing block erasing in a flash EPROM

Also Published As

Publication number Publication date
JP3190082B2 (ja) 2001-07-16
KR930015075A (ko) 1993-07-23
JPH05159587A (ja) 1993-06-25

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