KR100276858B1 - Electronic package with enhanced pad design - Google Patents
Electronic package with enhanced pad design Download PDFInfo
- Publication number
- KR100276858B1 KR100276858B1 KR1019980702478A KR19980702478A KR100276858B1 KR 100276858 B1 KR100276858 B1 KR 100276858B1 KR 1019980702478 A KR1019980702478 A KR 1019980702478A KR 19980702478 A KR19980702478 A KR 19980702478A KR 100276858 B1 KR100276858 B1 KR 100276858B1
- Authority
- KR
- South Korea
- Prior art keywords
- substrate
- portions
- conductive pad
- electronic package
- divided
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
- H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49822—Multilayer substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/642—Capacitive arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/29111—Tin [Sn] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/3205—Shape
- H01L2224/32057—Shape in side view
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83385—Shape, e.g. interlocking features
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01032—Germanium [Ge]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01039—Yttrium [Y]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0105—Tin [Sn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01052—Tellurium [Te]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01061—Promethium [Pm]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01077—Iridium [Ir]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1517—Multilayer substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Structure Of Printed Boards (AREA)
Abstract
본 발명의 전자 패키지(400), 특히 BGA는, 회로화된 기판(120)과, 이 기판(120)의 표면에 마련된 대응하는 도전성 패드에 의해 기판(120)상에 부착된 1개 이상의 활성 디바이스(110)를 구비하며, 각각의 도전성 패드는 서로 접촉하지 않는 여러개의 부분들(212-218)로 분할된다. 이 부분들(212-218)은 기판(120)의 배선가능한 영역에 의해 분리될 수 있으므로, 1개 이상의 배선 채널을 제공하게 된다. 게다가, 동일한 부분들(212-218)이 서로 다른 전위(접지 및 전원)에 있는 인접한 쌍과 접속될 수 있고, 캐패시터(410)에 의해 서로 디커플링될 수 있으며, 접지 및 전원에 대한 접속은 기판(120)을 관통하여 마련된 금속화된 홀들에 의해 달성된다.Electronic package 400 of the present invention, in particular BGA, comprises at least one active device attached onto substrate 120 by a circuitized substrate 120 and a corresponding conductive pad provided on the surface of the substrate 120. 110, wherein each conductive pad is divided into several portions 212-218 that are not in contact with each other. These portions 212-218 may be separated by a wireable area of the substrate 120, thus providing one or more wiring channels. In addition, the same portions 212-218 can be connected with adjacent pairs at different potentials (ground and power) and decoupled from each other by a capacitor 410, and the connection to ground and power is connected to the substrate ( 120 is achieved by metallized holes provided through.
Description
본 발명은 전자 패키지(electronic package)에 관한 것으로, 특히, 기판과, 와이어 본딩 기술에 따라 기판에 접속된 적어도 하나의 디바이스를 구비하는 전자 패키지에 관한 것이다.The present invention relates to an electronic package, and more particularly to an electronic package having a substrate and at least one device connected to the substrate in accordance with a wire bonding technique.
전자 패키지는 전형적으로 하나 이상의 활성 디바이스(active device)가 부착되어 있는 회로화된(circuitized) 기판을 구비하고 있으며, 디바이스를 한개만 구비하고 있는 패키지는 싱글 칩 모듈(Single Chip Modules;SCM)이라고 알려져 있고, 디바이스를 여러개 구비하고 있는 패키지는 멀티 칩 모듈(Multi Chip Modules;MCM)이라고 불려지고 있다. 디바이스를 기판에 부착하기 위한 전자 패키징 응용 분야, 특히, 볼 그리드 어레이(Ball Grid Array;BGA) 패키지에 있어서는, 아교(glue) 등의 부착 재료를 사용하는 것이 일반화되어 있다.Electronic packages typically have a circuitized substrate to which one or more active devices are attached, and packages with only one device are known as Single Chip Modules (SCMs). The package including several devices is called Multi Chip Modules (MCM). In electronic packaging applications for attaching devices to substrates, particularly in ball grid array (BGA) packages, it is common to use attachment materials such as glue.
전자 패키징 산업에 있어서, BGA 패키지는 현재의 제품들을 쿼드 플랫 팩(Quad Flat Packs;QFP)으로 대체하며, 아주 최근에 개발된 기술이다. BGA 패키지와 QFP 패키지의 주요한 차이점은, 2차 레벨 부착(second level attachment)이라고도 불려지고 있는 인쇄 회로 기판(PCB)에 대한 접속 시스템(connection system)이며, 이 접속 시스템은, 플라스틱 구성체의 주변부에 있는 코너(corner)를 따라 위치한 금속 리드(metal leads) 대신에, 기판의 하부(bottom)쪽에 매트릭스 형상으로 배치되어 마련된 공융의 주석 납 합금 볼(eutectic Tin Lead alloy balls)로 이루어져 있다. BGA 패키지와 QFP 패키지에 대해서는 "Circuits Assembly(USA) - Vol.6, No.3 March 1995 Pag.38-40"에 개시되어 있다.In the electronic packaging industry, BGA packages replace today's products with Quad Flat Packs (QFPs), a very recent development. The main difference between a BGA package and a QFP package is a connection system to a printed circuit board (PCB), also called second level attachment, which is a corner at the periphery of the plastic construction. Instead of metal leads located along the corners, it consists of eutectic tin lead alloy balls arranged in a matrix form at the bottom of the substrate. BGA packages and QFP packages are described in "Circuits Assembly (USA)-Vol. 6, No. 3 March 1995 Pag. 38-40".
각 디바이스는 일반적으로, 기판의 상부면(top surface)에 마련된 도전성 패드에 의해 기판에 부착되는데, 여기서 도전성 패드는 전형적으로, 이 패드가 대응하여 부착하게 되는 디바이스보다 약간 더 크다. 이 도전성 패드들은 아교 재료와의 화합성을 더욱 양호하게 할 뿐만 아니라, 열이 전도(conduction)에 의해 디바이스의 후미로부터 기판으로 전달되는 것을 어느 정도 촉진시킨다.Each device is generally attached to the substrate by a conductive pad provided on the top surface of the substrate, where the conductive pad is typically slightly larger than the device to which the pad is correspondingly attached. These conductive pads not only make better compatibility with the glue material, but also promote some degree of heat transfer from the rear of the device to the substrate by conduction.
종래의 기술에 있어서는, 각 패드로 인해, 기판의 상부면의 큰 영역이 배선으로 사용될 수 없어, 결국 접속용 도선들의 경로 배정(routing)에 있어서 전혀 이용될 수 없는 쓸모없는 영역이 생기게 된다는 결점이 있다. 이 문제점은, 배선에 이용될수 없는 쓸모없는 영역이 디바이스의 수(number)만큼 반드시 증가하게 되는 멀티 칩 모듈에 있어서 특히 심각하게 된다. 이 문제점으로 인해, 전자 패키지의 용적(dimensions)이 증가되거나 또는 동일한 기판상에 설치된 디바이스의 수가 감소하게 되어, 동일한 어플리케이션(application)에 필요한 모듈의 수가 증가하게 된다.In the prior art, each pad has the drawback that a large area of the upper surface of the substrate cannot be used as wiring, resulting in a useless area that cannot be used at all in the routing of the connecting leads. have. This problem is particularly acute for multi-chip modules in which useless areas that cannot be used for wiring will necessarily increase by the number of devices. Due to this problem, the dimensions of the electronic package are increased or the number of devices installed on the same substrate is reduced, thereby increasing the number of modules required for the same application.
전자 패키지의 배선가능 용량(wireability)을 증가시키기 위해, 현재의 방법론으로서는, 배선을 하기 위해서 패드를 희생시키고 기판의 자유 영역(freed area)을 이용하는 방법이 있지만, 이 해결 방법은, 열의 발산(thermal dissipation)이 전형적으로 0.5W보다 크지 않기 때문에, 패키지, 특히 유기 기판(organic substrates)의 열적인 성능을 저하시킨다. 다른 해결 방법으로서는, 세라믹 캐리어(ceramic carriers)와 같이 재료의 도전성을 더욱 높이는 방향으로, 원료(raw-materials)와 기술을 변경시키거나 또는 그 층 수를 증가시키는 방식으로, 기판에 변경을 가하는 방법이 있지만, 두가지 방법 모두 비용이 많이 들어서 전체 패키지의 코스트가 증가하게 된다.In order to increase the wireability of an electronic package, current methodologies include the use of freed areas of the substrate at the expense of pads for wiring, but the solution is thermal Since the dissipation is typically no greater than 0.5 W, it degrades the thermal performance of the package, especially organic substrates. Another solution is to change the substrate in such a way as to improve the conductivity of the material, such as ceramic carriers, by changing the raw-materials and technology, or by increasing the number of layers thereof. However, both methods are expensive and increase the cost of the entire package.
본 발명의 목적은 상기 결점을 해소할수 있는 기술을 제공하는 것이다.It is an object of the present invention to provide a technique which can solve the above drawbacks.
본 발명에 의하면, 회로화된 기판과 적어도 하나의 디바이스를 구비하는 전자 패키지로서, 적어도 하나의 디바이스 각각이, 배선에 의해 상기 기판에 전기적으로 접속되는 여러개의 입출력 접속을 한쪽에 가짐과 동시에, 적어도 하나의 디바이스 각각이 대향하는 쪽을 통하여 도전성의 제 1 열적 패드에 의해 상기 기판의 제 1 면(first face)에 부착되며, 상기 제 1 패드가 여러개의 분리된 제 1 부분들로 구성되는 것을 특징으로 하는 전자 패키지가 제공된다.According to the present invention, there is provided an electronic package having a circuitized substrate and at least one device, each of which at least one device has at least one input / output connection electrically connected to the substrate by wiring and at least Each of the devices is attached to the first face of the substrate by a conductive first thermal pad through opposite sides, the first pad consisting of a plurality of separate first portions. An electronic package is provided.
본 발명에서 제안된 방법은 기존의 재료들과도 충분히 호환성이 있고(compatible), 그들의 특성에 영향을 미치지 않으며, 또한 비용이 저렴하고, 매우 용이하게 구현될 수 있다. 게다가, 본 발명에 의한 패키징 방법은 산업상 이용되고 있는 현재의 프로세스 및 관련 장비와도 충분히 호환성이 있다.The method proposed in the present invention is sufficiently compatible with existing materials, does not affect their properties, is also inexpensive, and can be implemented very easily. In addition, the packaging method according to the present invention is sufficiently compatible with current processes and related equipment used in industry.
이러한 장점은, 전체 패키지의 열 발산에 대한 특성을 저하시키는 일 없이 본 발명에 의해 얻어지게 되며, 전체의 패드 금속 표면과 본 발명에서 제안된 설계 사이의 차때문에 발생하는 델타 열 발산(delta heat dissipation)의 가능성을 무시할 수 있게 된다.This advantage is obtained by the present invention without degrading the heat dissipation characteristics of the entire package and delta heat dissipation caused by the difference between the entire pad metal surface and the design proposed in the present invention. ) Can be ignored.
본 발명의 특정 실시예에 있어서, 상기 여러개의 부분들은 상기 기판의 배선가능한(wireable) 영역에 의해 분리된다.In a particular embodiment of the invention, the several portions are separated by a wireable area of the substrate.
인접하는 부분들의 각 쌍(couple) 사이에 있는 이 자유 영역(free area)은 접속용 도선의 경로 배정에 있어서 1개 이상의 배선 채널을 제공하게 되므로, 이용가능한 실 영역이나 또는 패키지의 전체적인 용적에 대한 기판의 배선가능 용량을 증가시키게 된다. 따라서, 본 발명의 이 실시예에 의하면, 특정한 어플리케이션에 필요한 전자 패키지의 용적 감소를 수반하지만, 이에 반해, 다수의 디바이스가 동일한 기판상에 설치될 수 있어서, 동일한 어플리케이션에 필요한 모듈의 수를 감소시키게 된다.This free area between each pair of adjacent parts will provide one or more wiring channels in the routing of the connecting leads so that it is possible to This increases the wiring capacity of the substrate. Thus, according to this embodiment of the present invention, the volume of the electronic package required for a particular application is accompanied, but in contrast, multiple devices can be installed on the same substrate, thereby reducing the number of modules required for the same application. do.
바람직하게는, 상기 디바이스는 4개의 코너부를 구비하고, 상기 패드는 4개의 부분으로 구성되며, 상기 배선가능한 영역은 상기 코너로부터 가로질러 연장되는 형태를 하고 있다.Preferably, the device has four corner portions, the pad consists of four portions, and the wireable area extends across the corner.
이 형상은 특별한 장점을 가지고 있는데, 그 이유는, 신호의 밀도가 코너에서 매우 증가하므로, 디바이스의 코너로부터 시작하는 배선 채널이 배선의 팬 아웃(fan out)을 용이하게 하기 때문이다.This shape has a particular advantage because the wiring channel starting from the corner of the device facilitates fan out of the wiring since the density of the signal is greatly increased at the corners.
유익한 실시예에 있어서는, 상기 전자 패키지가 멀티 칩 모듈이다. 여러개의 디바이스를 구비하는 패키지에 있어서는, 본 발명에서 제안된 패드 설계가 전체적인 패키지의 코스트와 성능면에 있어서 최대의 효과를 얻을 수 있다.In an advantageous embodiment, the electronic package is a multi chip module. In a package having several devices, the pad design proposed in the present invention can obtain the maximum effect in terms of overall cost and performance of the package.
본 발명의 다른 특정한 실시예에 있어서, 상기 부분중 적어도 제 1 부분은 접지 전위에 접속되고, 상기 부분중 적어도 제 2 부분은 전원 전위에 접속되며, 상기 제 1 및 제 2 부분은 디커플링 캐패시터(decoupling capacitor)에 의해 서로 접속된다.In another particular embodiment of the present invention, at least a first portion of the portion is connected to a ground potential, at least a second portion of the portion is connected to a power supply potential, and the first and second portions are decoupling capacitors. connected to each other by a capacitor).
이 방법에 의하면 디바이스의 디커플링 동작이 더욱 양호하게 된다. 또한 이 방법에 의하면, 활성 디바이스에 매우 근접하게 캐패시터로 전원과 접지를 연결시킴으로써, 전기적 동작에 있어서의 신호 잡음이 감소하게 된다. 게다가, 이 방법은 전용 회로를 가진 기판상의 이용가능한 실 영역에 영향을 주지 않는다.This method results in a better decoupling operation of the device. This method also reduces signal noise in electrical operation by connecting power and ground to the capacitor in close proximity to the active device. In addition, this method does not affect the available seal area on the substrate with the dedicated circuit.
종래 기술의 시스템에 따르면, 신호 잡음의 최적화는 일반적으로, 전원 및 접지(power and ground)를 되도록이면 활성 디바이스에 가깝게 캐패시터로 연결시키는 문제에 대해 역점을 두어 다루어지고 있다. 이들 캐패시터가 패키지 레벨에서 기판(board)상에 있는 경우, 이들 캐패시터는 특정한 배선 패턴을 필요로 하여, 회로에 이용할 수 있는 기존의 소규모의 실 영역(already small real estae)에 영향을 주게 되므로, 결과적으로 전체 모듈의 용적을 증대시키게 된다. 이에 비해, 모듈이 있는 주기판(mother board)상에 캐패시터들이 조립되는 경우에는, 이들 캐패시터들에 의해, 잡음 감소 수준은 흔히, 겨우 허용할 수 있는 정도 밖에 되지 않는다.According to prior art systems, the optimization of signal noise is generally addressed with the problem of connecting power and ground to a capacitor as close to the active device as possible. When these capacitors are on board at the package level, these capacitors require a specific wiring pattern, which affects the existing small real real estate available for the circuit. This increases the volume of the entire module. In contrast, when capacitors are assembled on a mother board with a module, with these capacitors, the level of noise reduction is often only acceptable.
유익하게는, 전자 패키지가, 상기 기판의 다른 표면에 마련된 확장 패드를 포함하고, 상기 확장 패드는 서로 접촉하지 않는 여러개의 다른 부분들로 구성되며, 이 다른 부분들중 적어도 하나가 상기 홀들중 적어도 하나에 의해 상기 부분들중 대응하는 하나에 접속되어 있다.Advantageously, the electronic package comprises an expansion pad provided on another surface of the substrate, the expansion pad consisting of several different portions that are not in contact with each other, wherein at least one of the other portions is at least one of the holes. It is connected to the corresponding one of the said parts by one.
결과적으로 얻어지는 경로(path)는 전체적인 패키징의 열적인 성능을 증가시켜서, 디바이스의 열 발산율을 매우 효과적으로 관리하는데 도움을 주는 열 발산 방법(thermal dissipation solution)이다. 결론적으로 말하자면, 열이 전체적으로 주기판(mother board)쪽으로 용이하게 발산될 수 있다는 것이다.The resulting path is a thermal dissipation solution that increases the thermal performance of the overall packaging, helping to manage the device's heat dissipation rate very effectively. In conclusion, heat can be easily dissipated toward the mother board as a whole.
특히 유익한 본 발명의 실시예에 있어서는, 상기 기판이 접지층과 전원층을 구비하며, 상기 제 1 부분이 상기 홀들 중 제 1 홀에 의해 상기 접지층에 접속되고, 상기 제 2 부분이 상기 홀들 중 제 2 홀에 의해 상기 전원층에 접속된다.In a particularly advantageous embodiment of the invention, the substrate comprises a ground layer and a power supply layer, wherein the first portion is connected to the ground layer by a first one of the holes, and the second portion is among the holes. It is connected to the said power supply layer by a 2nd hole.
이 실시예에 있어서는, 디커플링 캐패시터에 대한 접속이, 구멍뚫린 홀을 지나서 적층의 내부층(전원 또는 접지)으로부터 적층의 상부면으로 접속하는데 필요한 여분의 배선이 없는 패드 설계에 근거하여 비아를 통해 달성될 수 있고, 캐패시터가 디바이스에 근접하여 조립될 수 있어, 디바이스의 전기적 성능을 향상시켜서 이상적인 디바이스의 디커플링을 가능하게 한다.In this embodiment, the connection to the decoupling capacitor is achieved through the via based on a pad design without extra wiring needed to connect from the inner layer of the stack (power or ground) past the perforated holes to the top of the stack. And the capacitor can be assembled in close proximity to the device, thereby improving the electrical performance of the device to enable decoupling of the ideal device.
또한, 이 접속은, 금속성의 접지 및 전원 평면(metallic ground and power planes)을 통해서 패키지의 열 발산율을 더욱 증가시켜서, 이 열 발산율이, 주기판의 인터페이스쪽을 향하여 모든 접지 모듈의 접속부까지 미치도록 한다.In addition, this connection further increases the heat dissipation rate of the package through metallic ground and power planes, which extends to the connections of all ground modules towards the interface of the main board. To do that.
본 발명의 다른 유익한 실시예에 있어서는, 상기 제 1 부분이 상기 확장 부분중의 대응하는 제 1 부분에 의해 상기 접지 전위에 접속되고, 상기 제 2 부분이 상기 확장 부분중의 대응하는 제 2 부분에 의해 상기 전원 전위에 접속된다.In another advantageous embodiment of the invention, the first portion is connected to the ground potential by a corresponding first portion of the extension portion, and the second portion is connected to a corresponding second portion of the extension portion. Is connected to the power supply potential.
이하, 도면을 참조로 하여 본 발명의 다양한 실시예를 예로서 상세하게 설명한다.Hereinafter, various embodiments of the present invention will be described in detail with reference to the drawings.
도 1은 종래 기술에 따른 전자 패키지,1 is an electronic package according to the prior art,
도 2는 본 발명의 실시예에 따른 전자 패키지를 도시한 도면,2 illustrates an electronic package according to an embodiment of the present invention;
도 3은 열 발산이 증가된 전자 패키지를 도시한 도면,3 illustrates an electronic package with increased heat dissipation;
도 4a와 도 4b는 디바이스의 디커플링이 이루어진 전자 패키지를 도시한 도면,4A and 4B show an electronic package in which the device is decoupled;
도 5는 디바이스의 디커플링이 이루어진 다른 전자 패키지를 도시한 도면.5 shows another electronic package with decoupling of the device.
이하, 도면, 특히 도 1을 참조하면, 종래 기술에 따른 전자 패키지의 단면도가 도시되어 있다. 이 도면에는, 특히 아교층에 의해 회로화된 기판(120)에 부착된 디바이스(110)를 구비하고 있는 BGA(100)가 도시되어 있다. 기판(120)에는, 이 기판의 하부쪽에, 매트릭스 형상으로 배치되어 마련된 여러개의 접속 볼 또는 범프(130)가 마련되어 있고, 이들 접속 볼(130)은 전형적으로 주석 납 합금 등의 공융의 땜납(eutectic solder)이다. 이들 볼(130)은 BGA 패키지를 인쇄 회로 기판(도시하지 않음)에 접속시키는 데 사용된다. 플라스틱 볼 그리드 어레이(Plastic Ball Grid Array;PBGA), 세라믹 볼 그리드 어레이(Ceramic Ball Grid Array;CBGA)와 테이프 볼 그리드 어레이(Tape Ball Grid Array;TBGA) 등의 각종 유형의 BGA가 이용가능하며, 이들의 주요한 차이점은 기판 재료의 유형이다.Hereinafter, referring to the drawings, in particular FIG. 1, there is shown a cross-sectional view of an electronic package according to the prior art. In this figure, in particular, a BGA 100 having a device 110 attached to a substrate 120 circuited by a glue layer is shown. The board | substrate 120 is provided in the lower part of this board | substrate with several connection balls or bumps 130 arrange | positioned in matrix form, and these connection balls 130 are typically eutectic solders, such as a tin lead alloy, etc. solder). These balls 130 are used to connect the BGA package to a printed circuit board (not shown). Various types of BGAs are available, such as Plastic Ball Grid Array (PBGA), Ceramic Ball Grid Array (CBGA) and Tape Ball Grid Array (TBGA). The main difference is the type of substrate material.
디바이스(110)는, 기판(120)의 상부면에 마련된 도전성 패드(140)에 의해 기판(120)에 부착된다. 이 영역은 일반적으로 디바이스(110)보다 약간 더 크며, 아교 재료와의 화합성을 더욱 양호하게 할 뿐만 아니라, 열이 전도(conduction)에 의해 디바이스(110)의 후미로부터 기판(120)으로 전달되는 것을 촉진한다.The device 110 is attached to the substrate 120 by a conductive pad 140 provided on the upper surface of the substrate 120. This area is generally slightly larger than the device 110 and not only makes it more compatible with the glue material, but also heat is transferred from the trailing end of the device 110 to the substrate 120 by conduction. To promote.
디바이스(110)는 서모-소닉 와이어 본딩 동작(thermo-sonic wire bonding operation)을 통해 와이어(150)에 의해 기판(120)상의 전기 회로에 배선되며, 이어서 그 조립체에 플라스틱 수지(160)가 덮여진다(covered).Device 110 is wired to the electrical circuit on substrate 120 by wire 150 via a thermo-sonic wire bonding operation, and then the assembly is covered with plastic resin 160. (covered).
도 2에는, 본 발명의 실시예에 따른 전자 패키지의 평면도가 도시되어 있다. 이 도면에는, 기판(120)에 디바이스(110)가 부착되어 있는 BGA(200)를 도시하고 있다.2 is a plan view of an electronic package according to an embodiment of the present invention. This figure shows the BGA 200 with the device 110 attached to the substrate 120.
기판(120)은 플라스틱 물질, 화이버글라스(fiberglass) 적층, 세라믹, 폴리이미드, 알루미나 등의 여러 재료로 구현될 수 있다. 특히, 아주 최근에 개발된 전자 패키징 기술은, 적층 에폭시로 직조된 화이버 글래스 시트(fibers glass sheets)의 합성 구조로 이루어진 유기체 기판(organic substrate)을 사용하여 이루어지며, 유기체라고 하는 정의는, 이들 적층을 구성하기 위해 사용되는 에폭시 수지 화합물(유기 화학)로부터 나온 것이다.The substrate 120 may be formed of various materials, such as a plastic material, a fiberglass stack, a ceramic, a polyimide, and an alumina. In particular, a very recently developed electronic packaging technique is achieved using an organic substrate composed of a composite structure of fiberglass glass sheets woven with laminated epoxy, the definition of which is called organic lamination. It is from an epoxy resin compound (organic chemistry) used to make up.
전형적으로, 디바이스(110)는 통상 실리콘, 게르마늄 또는 갈륨비소로 이루어지는 칩 또는 활성 소자이며, 전형적으로, 이 디바이스는 대체로 직사각형과 같은 형상, 특히 정사각형 형상을 하고 있다. 디바이스(110)는 일반적으로 아교층에 의해 기판(120)에 부착된다. 아교는 열가소성 또는 열경화성 물질일 수 있으며, 전형적으로는, 열 발산이 더욱 양호하게 되도록 은 입자(silver particles)가 일반적으로 섞여 있는 에폭시 아교이다.Typically, device 110 is a chip or active device, typically consisting of silicon, germanium, or gallium arsenide, which typically has a generally rectangular shape, in particular a square shape. Device 110 is generally attached to substrate 120 by a glue layer. The glue may be a thermoplastic or thermoset material and is typically an epoxy glue generally mixed with silver particles so that heat dissipation is better.
디바이스(110)는, 기판(120)의 상부면에 마련된 도전성 패드에 의해 기판(120)에 부착된다. 이 패드는 아교 재료와의 화합성을 보다 양호하게 하고, 또한 열이 전도에 의해 디바이스(110)의 후미로부터 기판(120)으로 전달되는 것을 촉진하고, 통상 금속 물질로 이루어지며, 전형적으로는 구리 또는 니켈 및, 금 도금한 구리(gold plated copper)로 이루어진다.The device 110 is attached to the substrate 120 by a conductive pad provided on the upper surface of the substrate 120. This pad improves compatibility with the glue material and also promotes transfer of heat from the rear of the device 110 to the substrate 120 by conduction and is usually made of a metallic material, typically copper Or nickel and gold plated copper.
도시된 본 발명의 실시예에 있어서는, 패드가 서로 접촉되지 않는 여러 개의 부분들(212-218)로 구성되므로, 패드의 인접한 두개의 부분들 각각은 기판(120)의 자유 영역(free area)에 의해 분리된다. 그러면, 패드 중에서, 특히 디바이스(110)를 지나가는 부분에는 1개 이상의 절연 채널(222-228)이 형성된다. 도면에 도시된 이 채널(222-228)은, 접속용 도선을 경로 배정하기 위한 배선 채널로서 사용될 수 있도록 충분히 넓으므로, 이에 따라, 이용가능한 실 영역 또는 패키지의 전체 용적에 대한 기판의 배선용량이 증가하게 된다. 전형적으로는, 배선 채널(222-228)에 의해, 각 채널마다 4 라인 100 ㎛ 폭(100 ㎛ 공간) 또는 6 라인 75 ㎛폭(75 ㎛ 공간)이 형성될 수 있다. 당업자라면, 이와 같은 패드 설계에 의해, 특정 용도에 필요한 전자 패키지의 용적이 감소되는 반면에, 동일한 기판상에 보다 많은 디바이스를 설치할 수 있어서, 동일한 용도에 필요한 모듈의 수를 감소시키게 된다는 것을 알 수 있을 것이다. 본 명세서에서 제안된 방법은, 기존의 재료들과 완전히 호환성이 있고 또한 기존의 재료들의 성질에 영향을 주지 않을 뿐만 아니라, 저렴하고 매우 용이하게 구현될 수 있는 것이다. 게다가, 본 발명에 포함된 패키징 방법은 산업상 이용되고 있는 현재의 프로세스 및 관련 장비와도 충분히 호환성이 있다. 패드 금속면 전체와 본 발명의 제안된 설계 사이의 차때문에 발생하는 델타 열 발산의 가능성은 무시될 수 있다는 것에 주목해야 한다.In the illustrated embodiment of the present invention, since the pad consists of several parts 212-218 that are not in contact with each other, each of the two adjacent parts of the pad is in the free area of the substrate 120. Separated by. One or more insulating channels 222-228 are then formed in the pad, particularly in the portion passing through the device 110. These channels 222-228 shown in the figures are wide enough to be used as wiring channels for routing the connecting leads, so that the wiring capacity of the substrate relative to the total volume of the available seal area or package is Will increase. Typically, by the wiring channels 222-228, four lines 100 μm wide (100 μm space) or six lines 75 μm wide (75 μm space) may be formed for each channel. Those skilled in the art will appreciate that such pad designs reduce the volume of electronic packages required for a particular application, while allowing more devices to be installed on the same substrate, thereby reducing the number of modules required for the same application. There will be. The method proposed here is not only completely compatible with existing materials and does not affect the properties of existing materials, but can be implemented inexpensively and very easily. In addition, the packaging method included in the present invention is sufficiently compatible with current processes and related equipment used in industry. It should be noted that the possibility of delta heat dissipation due to the difference between the entire pad metal surface and the proposed design of the present invention can be ignored.
본 발명의 바람직한 실시예에서는, 패드가 4개의 분리된 부분으로 분할된다. 도 2에 도시한 실시예에서는, 패드가 4개의 다른 영역, 즉 그들의 형상이 몰타 십자(Maltese Cross)를 상기시키는 섬 영역(212-218)으로 분할되어 있다. 4개의 배선 채널(222-228)의 각각은, 디바이스(110)의 대응하는 코너로부터 중심부 영역으로 연장되고 있다. 중심부 영역은 배선을 어느 한 채널에서 다른 채널로 경로 배정하는데 사용될 수 있고, 또는, 다층 기판인 경우에는, 어느 한 채널에서 (잘 보이지 않게 숨어서 또는 관통하여)비아들을 거쳐서 내부 층으로 경로 배정하는데 사용될 수도 있다. 이 형상은 특히 유익한데, 그 이유는, 디바이스(110)에 반송될 신호의 밀도가 코너에서 증가하므로, 디바이스(110)의 코너로부터 시작하는 배선 채널이 디바이스(110)로부터의 팬 아웃을 더욱 용이하게 하기 때문이다.In a preferred embodiment of the invention, the pad is divided into four separate parts. In the embodiment shown in Fig. 2, the pad is divided into four different areas, i.e. island areas 212-218, whose shape reminds the Maltese Cross. Each of the four wiring channels 222-228 extends from the corresponding corner of the device 110 to the central region. The central region can be used to route the wiring from one channel to another, or, in the case of a multilayer substrate, to route through the vias (hidden or penetrated through) in one channel to the inner layer. It may be. This shape is particularly beneficial because the density of the signal to be conveyed to the device 110 increases at the corners, so that a wiring channel starting from the corner of the device 110 makes fanning out of the device 110 easier. Because it makes.
당업자라면, 멀티 칩 모듈과 같은 여러 디바이스를 구비하는 전자 패키지에, 동일한 패드 설계가 적용 가능하다는 것을 알 수 있을 것이다. 각 디바이스는 대응하는 패드에 의해 기판에 부착된다. 각 패드는 기판의 자유 영역에 의해 분리된, 서로 접촉하지 않는 여러 부분으로 분할되므로, 배선에 이용할 수 있는 1개 이상의 절연 채널을 제공할 수 있다. 본 발명에 따른 해결책은 멀티 칩 모듈에 있어서 특히 유익하며, 본 발명에서 제안된 패드 설계가, 전반적인 패키지 코스트 및 성능면에 있어서 최대 효과를 얻는다는 점에 주목해야 한다.Those skilled in the art will appreciate that the same pad design is applicable to electronic packages having multiple devices, such as multi-chip modules. Each device is attached to the substrate by a corresponding pad. Each pad is divided into several parts that are not in contact with each other, separated by free regions of the substrate, thereby providing one or more insulating channels that can be used for wiring. It should be noted that the solution according to the invention is particularly advantageous for multi-chip modules, and that the pad design proposed in the present invention achieves the maximum effect in terms of overall package cost and performance.
이하, 도 3을 참조하면, 열 발산이 증가된 전자 패키지의 단면도가 도시되어 있다.3, a cross-sectional view of an electronic package with increased heat dissipation is shown.
BGA(300)는 기판(310)에 부착된 디바이스(110)를 구비하고 있다. 도시된 본 발명의 실시예에서, 기판(310)은, 전형적으로 멀티 칩 모듈에서 사용되는 여러 층(312-318)을 구비하는 다층 구조이다.The BGA 300 has a device 110 attached to a substrate 310. In the illustrated embodiment of the invention, the substrate 310 is a multi-layered structure having several layers 312-318, typically used in multi-chip modules.
디바이스(110)는 전술한 도전성 패드에 의해 기판(310)에 부착되며, 특히 이 도면에서는 도전성 패드로서, 분리 부분들(218,216 및 214)이 가시적으로(visible) 도시되어 있다. 전술한 바와 같이, 패드 금속면 전체와 본 발명에서 제안된 설계 사이의 차 때문에 발생하는 델타 열 발산의 가능성은 무시될 수 있다.The device 110 is attached to the substrate 310 by the conductive pad described above, and in particular in this figure the separation portions 218, 216 and 214 are shown visibly. As mentioned above, the possibility of delta heat dissipation due to the difference between the entire pad metal surface and the design proposed in the present invention can be ignored.
그러나, 도전성 패드가 사용되는 경우라도, 기판의 열 전도 특성이 나쁘기 때문에 이들 전자 패키지의 열 발산은 제한되며, 이러한 문제점으로 인해, 이 전자 패키징 기술을 보다 광범위한 응응 분야로 확장시키는 데에는 통상 1.3 W 정도의 엄격한 한계점이 설정된다.However, even when conductive pads are used, the heat dissipation of these electronic packages is limited because of poor thermal conduction properties of the substrate, and due to these problems, it is usually about 1.3 W to extend this electronic packaging technology to a wider range of applications. The strict limit of is set.
패키지의 열에 대한 운용(management)을 향상시키기 위해, 도시된 본 발명의 실시예에서는, 기판(310)이 적어도 하나의 도전성 홀을 구비하되, 이 도전성 홀은 전형적으로 구멍뚫린 금속화된 홀로서 기판(310)의 상부면에 마련된 패드에 접속되어 있는 것이고, 또한 이 실시예에서는, 열적 비아(thermal via)(326)가 부분(216)에 접속되어 있고, 열적 비아(328)가 부분(218)에 접속되어 있다. 이들 열적 비아들은 또한, 동일한 기판(310)의 하부면에 마련된 확장 패드(further pad)에도 접속될 수 있다. 바람직한 실시예에 있어서, 이 확장 패드는 기판(310)의 상부면에 마련된 패드와 동일한 형상을 한다. 특히, 이 확장 패드는 여러 분리 부분들(334-338)을 포함하며, 도시된 패키지(300)에 있어서는, 열적 비아(326)가 예를 들어 기판(310) 상부면의 부분(216)을 이에 대응하는 하부면의 부분(336)에 접속시키고, 홀(328)이 부분(218)을 이에 대응하는 부분(338)에 접속시킨다.In order to improve the management of the heat of the package, in the illustrated embodiment of the present invention, the substrate 310 has at least one conductive hole, which is typically a perforated metallized hole and the substrate It is connected to a pad provided on the upper surface of 310, and in this embodiment, a thermal via 326 is connected to the portion 216, and the thermal via 328 is the portion 218. Is connected to. These thermal vias may also be connected to an extension pad provided on the bottom surface of the same substrate 310. In a preferred embodiment, the expansion pad has the same shape as the pad provided on the upper surface of the substrate 310. In particular, the expansion pad includes several separation portions 334-338, and in the illustrated package 300, thermal vias 326 may for example be a portion 216 of the top surface of the substrate 310. A portion 336 of the corresponding bottom surface is connected, and a hole 328 connects the portion 218 to the corresponding portion 338.
기판(310) 하부쪽의 확장 패드는, BGA 패키지를 인쇄 회로 기판(도시하지 않음)에 접속시키는데 사용되는 공융 볼(eutectic balls)(130)에 접속된다. 그 결과, 충분히 배열되어 있는 볼(130)에 의해 발산된 열이 주 기판쪽으로 전체적으로 확산되어 간다. 따라서, 이 열 발산 경로에 의해, 전반적인 패키징의 열 성능은 열 발산값이 전형적으로 2 W 정도로 증가된다.An expansion pad under the substrate 310 is connected to eutectic balls 130 used to connect the BGA package to a printed circuit board (not shown). As a result, the heat dissipated by the balls 130 arranged sufficiently is diffused to the main substrate as a whole. Thus, with this heat dissipation path, the overall thermal performance of the packaging is increased by a typical 2 W heat dissipation value.
도면에 도시한 실시예에 있어서, 다층 기판(310)은 접지(GND)층(342)과 전원(Vcc)층(344)을 구비하고 있다. 열적 비아(326,328)는 GND층(342)과 Vcc층(344)에 접속된다. GND층(342)과 Vcc층(344)은 모두 전체적으로 충분히 금속성 면(full metallic planes)이기 때문에, 두 층 모두 패키지(300)의 열 발산율을 더 한층 증가시킨다는 점에 주목해야 한다. 게다가, GND층(342)으로의 접속으로 인해, GND 모듈 접속 전체에 대한 열 발산율이 주 기판 계면쪽으로 미치게 된다.In the embodiment shown in the figure, the multilayer substrate 310 includes a ground (GND) layer 342 and a power supply (Vcc) layer 344. Thermal vias 326 and 328 are connected to GND layer 342 and Vcc layer 344. It should be noted that since both the GND layer 342 and the Vcc layer 344 are fully metallic planes overall, both layers further increase the heat dissipation rate of the package 300. In addition, the connection to the GND layer 342 causes the heat dissipation rate for the entire GND module connection to reach the main substrate interface.
이하, 도 4a 및 도 4b를 참조하면, 디바이스의 디커플링이 이루어진 전자 패키지가 도시되어 있다.4A and 4B, an electronic package in which the device is decoupled is shown.
특히, 도 4a에 있어서는 BGA(400)의 평면도가 도시되어 있다. BGA(400)는, 전술한 도전성 패드에 의해 기판(120)에 부착된 디바이스(110)를 구비하고 있으며, 특히 패드는 4개의 상이한 부분(212-218)으로 분할되어 있다.In particular, in FIG. 4A, a plan view of the BGA 400 is shown. The BGA 400 has a device 110 attached to the substrate 120 by the conductive pad described above, in particular the pad is divided into four different portions 212-218.
디바이스의 디커플링 동작을 보다 양호하게 하기 위해, 부분(216)과 같은 패드의 적어도 제 1 부분은 접지 전위에 접속되어 있고, 부분(218)과 같은 적어도 제 2 부분은 전원 전위에 접속되어 있으며, 2개의 부분들(216, 218)은 디커플링 캐패시터(410)에 의해 서로 접속되어 있다. 본 발명의 바람직한 실시예에 있어서는, 4개의 부분들(212-218)이 서로 다른 전위 GND 와 Vcc(도시하지 않음)로 인접한 쌍들과 접속되어 있다. 도시된 실시예에 있어서, 캐패시터에 대한 접속은, 패드의 각 부분으로부터 대응하는 캐패시터로 연장되는 도선을 통해 달성된다. 이와 같은 방법에 의해, 전기적 동작에 있어서 신호 잡음 레벨을 감소시킬 수 있다는 것에 주목해야 한다. 본 발명의 바람직한 실시예에서는 이들 부분(212-218)이 전술한 배선 채널을 제공하도록 충분히 넓은 영역에 의해 분리되지만, 이들 부분(212-218)을 배선 불가능한 좁은 영역에 의해 분리한다 하더라도, 상기 디커플링 동작을 달성할 수 있다는 것은, 당업자라면 알 수 있을 것이다.For better decoupling operation of the device, at least a first portion of the pad, such as portion 216, is connected to a ground potential, and at least a second portion, such as portion 218, is connected to a power supply potential, 2 Parts 216 and 218 are connected to each other by a decoupling capacitor 410. In a preferred embodiment of the present invention, four portions 212-218 are connected with adjacent pairs at different potentials GND and Vcc (not shown). In the illustrated embodiment, the connection to the capacitor is achieved through a lead that extends from each portion of the pad to the corresponding capacitor. It should be noted that by this method, signal noise levels can be reduced in electrical operation. In the preferred embodiment of the present invention, these portions 212-218 are separated by a region large enough to provide the aforementioned wiring channel, but even if these portions 212-218 are separated by a non-wireable narrow region, the decoupling It will be appreciated by those skilled in the art that the operation can be achieved.
도 4b의 단면도에 도시된 바와 같이, 기판(120) 상부면의 패드는 기판(120) 하부면에 마련된 확장 패드에 접속되며, 특히, 부분(216)은 도전성 홀(326)에 의해 확장 부분(336)에 접속되고, 부분(218)은 다른 열적 비아(328)를 거쳐 다른 확장 패드(338)에 접속된다. 기판(120) 하부면에 마련된 이 확장 부분들은, 이 확장 부분들과 동일한 쪽에 존재하면서 접속용의 구멍뚫린 홀을 필요로 하지 않고 본딩 패드(Vcc 또는 GND)에 대해 매우 짧은 접속을 제공한다. 2개의 영역 GND와 Vcc에 위치한 접속용 볼은, 결과적으로 얻어지는 저항값이 매우 작은 다중 액세스 포인트이다.As shown in the cross-sectional view of FIG. 4B, the pad of the upper surface of the substrate 120 is connected to an expansion pad provided on the lower surface of the substrate 120, and in particular, the portion 216 is formed by the conductive hole 326. 336 is connected, and portion 218 is connected to another expansion pad 338 via another thermal via 328. These extension portions provided on the lower surface of the substrate 120 are on the same side as these expansion portions and provide very short connections to the bonding pads Vcc or GND without the need for the punched holes for the connection. The connecting balls located in the two regions GND and Vcc are multiple access points with very small resistance values as a result.
도 5에는 디바이스의 디커플링이 이루어진 전자 패키지의 또다른 실시예가 도시되어 있다.5 shows another embodiment of an electronic package in which the device is decoupled.
BGA(500)는 접지층(342)과 전원층(344)을 구비하는 다층 구조이며, 금속화된 구멍(326)은 도전성 패드의 부분(216)에 접속되어 있고, 홀(328)은 도전성 패드의 부분(218)에 접속되어 있다.The BGA 500 is a multilayer structure having a ground layer 342 and a power supply layer 344, the metallized holes 326 are connected to the portion 216 of the conductive pads, and the holes 328 are conductive pads. Part 218 is connected.
특히 유익한 도 5의 실시예에 있어서, 서로 다른 전원 전위 GND 및 Vcc인 인접쌍과의 접속은, Vcc 또는 GND 면에 대한 접속으로서의 패드 각 부분의 열적 비아와, 디바이스에 근접하여 조립된 캐패시터를 사용하여, 동일한 칩 캐리어에 의해 달성된다. 도시된 실시예에 있어서, 부분(216)은 홀(326)에 의해 접지면(342)에 접속되고, 부분(218)은 홀(328)에 의해 전원 층(344)에 접속된다.In a particularly advantageous embodiment of Fig. 5, the connection with adjacent pairs of different power supply potentials GND and Vcc uses thermal vias in each part of the pad as a connection to the Vcc or GND plane, and a capacitor assembled close to the device. This is achieved by the same chip carrier. In the illustrated embodiment, portion 216 is connected to ground plane 342 by hole 326, and portion 218 is connected to power source layer 344 by hole 328.
캐패시터(510)에 대한 접속은 다른 금속화된 홀을 통해 달성되며, 특히, 캐패시터(510)는 홀(520)에 의해 접지층에 접속되고, 전원층(344)은 다른 홀(530)에 의해 전원층(344)에 접속된다. 본 발명의 이 실시예는, 구멍뚫린 홀을 지나서 적층의 내부 층(Vcc 또는 GND)으로부터 상부면으로 접속하는 데 필요한 여분의 배선이 없이도, 디바이스의 전기적 성능을 향상시켜서 디바이스 디커플링을 이상적으로 가능하게 한다.Connection to capacitor 510 is achieved through other metallized holes, in particular capacitor 510 is connected to ground layer by hole 520, and power layer 344 is connected by other hole 530. It is connected to the power supply layer 344. This embodiment of the present invention ideally enables device decoupling by enhancing the electrical performance of the device without the extra wiring needed to connect from the inner layer of the stack (Vcc or GND) to the top surface past the perforated holes. do.
Claims (10)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
WOPCT/IT95/00161 | 1995-10-04 | ||
IT9500161 | 1995-10-04 | ||
PCT/GB1996/002420 WO1997013275A1 (en) | 1995-10-04 | 1996-10-03 | Electronic package with enhanced pad design |
Publications (2)
Publication Number | Publication Date |
---|---|
KR19990064001A KR19990064001A (en) | 1999-07-26 |
KR100276858B1 true KR100276858B1 (en) | 2001-01-15 |
Family
ID=11332480
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019980702478A KR100276858B1 (en) | 1995-10-04 | 1996-10-03 | Electronic package with enhanced pad design |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP0853817A1 (en) |
JP (1) | JP3093278B2 (en) |
KR (1) | KR100276858B1 (en) |
TW (1) | TW299564B (en) |
WO (1) | WO1997013275A1 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09175399A (en) * | 1995-12-28 | 1997-07-08 | Motohiro Seisakusho:Kk | Dolly for container |
KR100469911B1 (en) * | 1997-12-31 | 2005-07-07 | 주식회사 하이닉스반도체 | Arrangement of leisure bar capacitors |
JP2004214657A (en) | 2003-01-07 | 2004-07-29 | Internatl Business Mach Corp <Ibm> | Water-soluble protective paste for manufacturing printed circuit board |
JP5954013B2 (en) * | 2012-07-18 | 2016-07-20 | 日亜化学工業株式会社 | Semiconductor element mounting member and semiconductor device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1985001835A1 (en) * | 1983-10-21 | 1985-04-25 | American Telephone & Telegraph Company | Semiconductor integrated circuit including a lead frame chip support |
EP0623956A2 (en) * | 1993-05-04 | 1994-11-09 | Motorola, Inc. | A semiconductor device having no die supporting surface and method for making the same |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63245952A (en) * | 1987-04-01 | 1988-10-13 | Hitachi Ltd | Multichip module structure |
EP0382203B1 (en) * | 1989-02-10 | 1995-04-26 | Fujitsu Limited | Ceramic package type semiconductor device and method of assembling the same |
JPH0422162A (en) * | 1990-05-17 | 1992-01-27 | Hitachi Ltd | Lead frame and semiconductor integrated circuit device using it |
JPH0494565A (en) * | 1990-08-10 | 1992-03-26 | Toshiba Corp | Semiconductor device |
JPH04139864A (en) * | 1990-10-01 | 1992-05-13 | Seiko Epson Corp | Semiconductor device |
JP2501953B2 (en) * | 1991-01-18 | 1996-05-29 | 株式会社東芝 | Semiconductor device |
US5258648A (en) * | 1991-06-27 | 1993-11-02 | Motorola, Inc. | Composite flip chip semiconductor device with an interposer having test contacts formed along its periphery |
US5355283A (en) * | 1993-04-14 | 1994-10-11 | Amkor Electronics, Inc. | Ball grid array with via interconnection |
-
1996
- 1996-05-11 TW TW085105592A patent/TW299564B/zh active
- 1996-10-03 JP JP09514072A patent/JP3093278B2/en not_active Expired - Fee Related
- 1996-10-03 KR KR1019980702478A patent/KR100276858B1/en not_active IP Right Cessation
- 1996-10-03 EP EP96932706A patent/EP0853817A1/en not_active Ceased
- 1996-10-03 WO PCT/GB1996/002420 patent/WO1997013275A1/en not_active Application Discontinuation
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1985001835A1 (en) * | 1983-10-21 | 1985-04-25 | American Telephone & Telegraph Company | Semiconductor integrated circuit including a lead frame chip support |
EP0623956A2 (en) * | 1993-05-04 | 1994-11-09 | Motorola, Inc. | A semiconductor device having no die supporting surface and method for making the same |
Also Published As
Publication number | Publication date |
---|---|
KR19990064001A (en) | 1999-07-26 |
WO1997013275A1 (en) | 1997-04-10 |
EP0853817A1 (en) | 1998-07-22 |
JPH11508409A (en) | 1999-07-21 |
JP3093278B2 (en) | 2000-10-03 |
TW299564B (en) | 1997-03-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5825628A (en) | Electronic package with enhanced pad design | |
JP3110922B2 (en) | Multi-chip module | |
JP3762844B2 (en) | Opposite multichip package | |
US6060777A (en) | Underside heat slug for ball grid array packages | |
KR100281813B1 (en) | Thermally and electrically enhanced ball grid package | |
US6326696B1 (en) | Electronic package with interconnected chips | |
US6440770B1 (en) | Integrated circuit package | |
US6218731B1 (en) | Tiny ball grid array package | |
US5705851A (en) | Thermal ball lead integrated package | |
CA2202426C (en) | Mounting structure for a semiconductor circuit | |
US5606199A (en) | Resin-molded type semiconductor device with tape carrier connection between chip electrodes and inner leads of lead frame | |
EP0600590A1 (en) | Cooling electronic circuit assemblies | |
US5473190A (en) | Tab tape | |
JPS62130533A (en) | Chip carrier and circuit using it and manufacture of chip carrier | |
US6340839B1 (en) | Hybrid integrated circuit | |
US6008988A (en) | Integrated circuit package with a heat spreader coupled to a pair of electrical devices | |
KR100276858B1 (en) | Electronic package with enhanced pad design | |
JP2000323610A (en) | Film carrier semiconductor device | |
US6057594A (en) | High power dissipating tape ball grid array package | |
JPH04290258A (en) | Multichip module | |
JP2003007914A (en) | Semiconductor device | |
US20040042189A1 (en) | Multi-chip integrated module | |
JP3064379U (en) | Three-dimensional assembly structure of integrated circuit package | |
KR20000052093A (en) | Multi-chip chip scale package | |
KR19980021175A (en) | Heat Dissipation Ball Grid Array (BGA) Package |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
LAPS | Lapse due to unpaid annual fee |