KR100255691B1 - Laser diode - Google Patents

Laser diode Download PDF

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KR100255691B1
KR100255691B1 KR1019930012233A KR930012233A KR100255691B1 KR 100255691 B1 KR100255691 B1 KR 100255691B1 KR 1019930012233 A KR1019930012233 A KR 1019930012233A KR 930012233 A KR930012233 A KR 930012233A KR 100255691 B1 KR100255691 B1 KR 100255691B1
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layer
laser diode
cladding layer
cladding
buffer layer
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KR1019930012233A
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KR950002142A (en
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유재수
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윤종용
삼성전자주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE: A laser diode is provided to restrain the diffusion of carriers without the variation of regulated properties by providing an anti-diffusion layer between a p-cladding layer and a p-buffer layer. CONSTITUTION: A semiconductor laser diode is constituted by a GaAs substrate, an InGaP:Te n-buffer layer doped with Te, an In0.43Ga0.57As0.15P0.96 n-cladding layer, an In0.13Ga0.97As0.75P0.25 active layer, an In0.43Ga0.57As0.15P0.96 p-cladding layer, an In0.43Ga0.51P anti-diffusion layer and an InGaP:Zn p-buffer layer doped with Zn. The anti-diffusion layer is sandwiched between the buffer layer and the cladding layer, and grown in a graphite shell. The junction positions of the anti-diffusion layer are precisely controlled through the regulation of thin film growth time in the shell.

Description

레이저 다이오드Laser diode

제1도는 본 발명 레이저 다이오드의 단층 구조도.1 is a single layer structure diagram of a laser diode of the present invention.

제2도는 상기 본 발명 레이저 다이오드의 계층별 밴드갭을 보이는 선도.2 is a diagram showing the bandgap for each layer of the laser diode of the present invention.

제3도는 본 발명 레이저 다이오드의 접합위치-양자효율선도이다.3 is a junction position-quantum efficiency diagram of the laser diode of the present invention.

본 발명은 캐리어와 확산 방지막이 마련된 증진된 양자 효율의 레이저 다이오드(Laser Diode)에 관한 것이다.The present invention relates to an improved quantum efficiency laser diode provided with a carrier and a diffusion barrier.

고출력 반도체 레이저는 광기록 기술에서 기록속도를 높이기 위한 필수품일 뿐 아니라 YAG등과 같은 고체 레이저의 여기 광원으로 효율적으로 적용될 수 있는 것이다. 특히 고체 레이저에 사용할 경우 여타 광원에 비해 (고체 레이저의 ?) 수명이 연장되고, 작동이 용이하며, 또한 효율을 극대화할 수 있게 된다. 이러한 반도체 레이저 다이오드는 그 크기가 매우 작기 때문에 장치의 전체 규모를 줄일 수 있어 소비성 전자제품의 광원으로서 사실상 필수적이다.High power semiconductor lasers are not only a necessity to increase the recording speed in optical recording technology, but also can be efficiently applied as excitation light sources of solid state lasers such as YAG. In particular, when used in solid state lasers, the lifespan is extended, operation is easy and efficiency can be maximized compared to other light sources. These semiconductor laser diodes are very small in size and can reduce the overall size of the device, which is essentially essential as a light source for consumer electronics.

종래 고출력 레이저 다이오드는 적절히 처리된 레이저 방출면으로서의 경면(Facet)을 가지는데, 고출력 광발진시 이에 발생하는 산화작용에 의해 특성 저하 및 수명 단축이 일어 나게 된다. 산화 작용은 캐리어 누설자 관련이 있기 때문에 효율 증대를 위하여 캐리어의 누설을 억제할 필요가 있다.Conventional high power laser diodes have a facet as an appropriately treated laser emitting surface, which results in deterioration of characteristics and shortening of life due to oxidation occurring during high power photo oscillation. Since the oxidation action is related to the carrier leaker, it is necessary to suppress the leakage of the carrier to increase the efficiency.

이러한 캐리어의 누설은 성장 결정층 내에 존재할 수 있는 결함(Defect)나 디이프 레벨(Deep Level)을 통한 비방사성 결합(Non radiative Combination)과 접합계면(Junction Interface)에서 자유 캐리어 손실로 대별된다.Such leakage of carriers is roughly classified as free carrier loss at non-radiative combination and junction interface through defect or deep level that may exist in the growth crystal layer.

그리고, 내부 구조에 있어서, p형 반도체의 도펀트(Dopant)로 Zn 이나 Mg 등의 강한 휘발성과 확산성에 의해 결정 성장층의 전기적 특성이 교란되게 된다.In the internal structure, the electrical properties of the crystal growth layer are disturbed due to the strong volatility and diffusivity of Zn, Mg, etc. as a dopant of the p-type semiconductor.

본 발명은 내부 캐리어 손실 또는 누설을 억제하여 레이저 발진 효율을 향상시킬 수 있는 반도체 레이저 다이오드를 제공함에 그 목적이 있다.SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor laser diode capable of improving laser oscillation efficiency by suppressing internal carrier loss or leakage.

상기 목적을 달성하기 위하여 본 발명 반도체 레이저 다이오드는, 기판에 활성층과 활성층 상하의 p-크래딩 층과 n-크래딩층이 마련되고, 상기 상부의 이 p-크래딩층의 위에 p-버퍼층이 마련된 반도체 레이저 다이오드에 있어서, 상기 p-크래딩층과 p-버퍼층의 사이에 캐리어 확산방지막이 마련되어 있는 점에 그 특징이 있다.In order to achieve the above object, in the semiconductor laser diode of the present invention, a semiconductor laser is provided with an active layer, a p-cladding layer above and below the active layer and an n-cladding layer on a substrate, and a p-buffer layer on the upper p-cladding layer. A diode is characterized in that a carrier diffusion barrier is provided between the p-cladding layer and the p-buffer layer.

이러한 본 발명에 의하면, 결합위치(Junction Position)의 조절이 가능하고 방사 결합(Radiative combination)이 가장 활발하게 일어나고 있는 활성층에서의 자유 캐리어의 손실을 최소화되게 되고, 이로써 양자효율이 극대화되게 된다.According to the present invention, it is possible to control the junction position and minimize the loss of free carriers in the active layer in which the radial combination is most actively occurring, thereby maximizing the quantum efficiency.

이하 첨부된 도면을 참조하면서 본 발명 반도체 레이저 다이오드의 실시예를 상세히 설명한다.Hereinafter, an embodiment of the semiconductor laser diode of the present invention will be described in detail with reference to the accompanying drawings.

제1도는 본 발명 반도체 레이저 다이오드의 단층 구조를 보인다.1 shows a single layer structure of the semiconductor laser diode of the present invention.

도면에서, “1”은 GaAs 기판이며, “2”는 Te이 도핑된 InGaP:Te n- 버퍼층, “3”은 In0.43Ga0.57As0.15P0.96n-크래딩층, “4”는 In0.13Ga0.97As0.75P0.25활성층, “5”는 In0.43Ga0.57As0.15P0.96p-크래딩층, “6”은 In0.43Ga0.51P 확산방지막 그리고 “7”은 Zn이 도핑된 InGaP:Zn p-버퍼층이다.In the figure, “1” is a GaAs substrate, “2” is a Te doped InGaP: Te n- buffer layer, “3” is In 0.43 Ga 0.57 As 0.15 P 0.96 n-cladding layer, and “4” is In 0.13 Ga 0.97 As 0.75 P 0.25 active layer, “5” is In 0.43 Ga 0.57 As 0.15 P 0.96 p-cladding layer, “6” is In 0.43 Ga 0.51 P diffusion barrier and “7” is Zn doped InGaP: Zn p-buffer layer to be.

이상과 같은 구조의 본 발명 반도체 레이저 다이오드를 제조하는 결정성장 장치는 통상의 LPE, MOCVD, MBE등이다. 본 발명 레이저 다이오드의 특징부는 버퍼층과 크래딩층의 사이에 마련되는 대단히 얇은 상기 도펀트 확산 방지막(6)이다. 이 도펀트 확산 방지막은 그래파이트 셀(Graphite Shell)에서 성장되며, 특히 접합 위치는 이 셀에서 박막성장시간의 조절에 의해 정밀하게 콘트롤할 수 있게 된다.The crystal growth apparatus for producing the semiconductor laser diode of the present invention having the above structure is conventional LPE, MOCVD, MBE and the like. A feature of the inventive laser diode is the very thin dopant diffusion barrier 6 provided between the buffer layer and the cladding layer. The dopant diffusion barrier layer is grown in a graphite shell, and in particular, the junction position can be precisely controlled by controlling the thin film growth time in the cell.

제2도는 상기 본 발명 레이저 다이오드의 계층별 밴드갭을 보이는 선도이다. 이 선도는 본 발명 특징적 요소인 확산 방지층에 의해 계층별 밴드갭의 변화가 없다는 점을 보인다. 즉, 제2도의 선도는 종래 구조의 정상적 레이저 다이오드의 특성의 그것과 동일한 것이다. 이러한 본 발명 반도체 레이저 다이오드의 제조에는 LPE법이 이용되었으며, 상기 도펀트 확산 방지막은 성장에 이해 얻어진 In0.49Ga0.51P이다. 이 확산 방지막의 성장시간의 조절에 의해 PN 접합위치가 조절되었으며, 이 효율변화는 제3도에 도시된 바와 같다. 여기에서 접합위치는 EBIC(Electron Beam Current)법에 의해 측정되었으며, 외부 양자 효율은 L/C 커브(Light/Current Curve)로 부터 측정되었다. 제3도에 의하면 조절된 접합위치 변화에 따라 양자 효율의 변화를 보이는데, 이 선도는 조절된 접합위치에 의해 양자 효율의 증대가 가능하다는 것을 보인다.2 is a diagram showing the bandgap for each layer of the laser diode of the present invention. This diagram shows that there is no change of the band gap per layer by the diffusion barrier layer which is a characteristic element of the present invention. That is, the diagram of FIG. 2 is the same as that of the normal laser diode of the conventional structure. LPE method was used to manufacture such a semiconductor laser diode of the present invention, and the dopant diffusion barrier layer is In 0.49 Ga 0.51 P obtained for growth. The PN junction position was controlled by controlling the growth time of the diffusion barrier, and this change in efficiency is shown in FIG. Here, the junction position was measured by EBIC (Electron Beam Current) method, the external quantum efficiency was measured from the L / C curve (Light / Current Curve). According to FIG. 3, the quantum efficiency is changed according to the adjusted junction position change, and this diagram shows that the quantum efficiency can be increased by the adjusted junction position.

이러한 본 발명에 의하면, 효과적인 캐리어 손실이 억제를 통하여 양자 효율의 증대가 가능하게 되고, 특히 금속화(Metallization)의 어닐링을 위한 열처리 과정에서의 Zn 등 도펀트의 확산이 억제되어 전기적 특성의 악화가 방지된다.According to the present invention, effective carrier loss can be suppressed to increase quantum efficiency, and in particular, diffusion of dopants such as Zn during heat treatment for annealing of metallization is suppressed to prevent deterioration of electrical characteristics. do.

Claims (5)

기판에 활성층과 활성층 상하의 p-크래딩 층과 n-크래딩층이 마련되고, 상기 상부의 이 p-크래딩층의 위에 p-버퍼층이 마련된 반도체 레이저 다이오드에 있어서, 상기 p-크래딩층과 p-버퍼층의 사이에 캐리어 확산방지막이 마련되어 있는 것을 특징으로 하는 레이저 다이오드.A semiconductor laser diode having an active layer, a p-cladding layer above and below an active layer, and an n-cladding layer formed on a substrate, and a p-buffer layer formed on the upper p-cladding layer, wherein the p-cladding layer and the p-buffer layer are provided. A laser diode, wherein a carrier diffusion barrier is provided in between. 제1항에 있어서, 상기 기판은 GsAs, n-버퍼층은 도핑된 InGaP, 상기 n-크래딩층은 InGaAsP, 상기 활성층은 InGaAsP, 상기 p-크래딩층은 InGaAsP, 그리고 상기 버퍼층은 도핑된 InGaP 로 이루어 지는 것을 특징으로 하는 레이저 다이오드.The method of claim 1, wherein the substrate is made of GsAs, an n-buffer layer is doped InGaP, the n-cladding layer is InGaAsP, the active layer is InGaAsP, the p-cladding layer is InGaAsP, and the buffer layer is doped InGaP. Laser diode, characterized in that. 제2항에 있어서, n-크래딩층은 In0.43Ga0.57As0.15P0.95, 상기 활성층은 In0.13Ga0.87As0.75P0.25, 상기 p-크래딩층은 In0.43Ga0.57As0.15P0.95의 조성을 가지는 것을 특징으로 하는 레이저 다이오드.3. The composition of claim 2, wherein the n-cladding layer has In 0.43 Ga 0.57 As 0.15 P 0.95 , the active layer has In 0.13 Ga 0.87 As 0.75 P 0.25 , and the p-cladding layer has In 0.43 Ga 0.57 As 0.15 P 0.95 . A laser diode characterized in that. 제2항 또는 제3항에 있어서, 상기 확산 방지막은 InGaP인 것을 특징으로 하는 레이저 다이오드.The laser diode according to claim 2 or 3, wherein the diffusion barrier is InGaP. 제4항에 있어서, 상기 확산 방지막은 In0.49Ga0.51P의 조성을 가지는 것을 특징으로 하는 레이저 다이오드.The laser diode of claim 4, wherein the diffusion barrier has a composition of In 0.49 Ga 0.51 P.
KR1019930012233A 1993-06-30 1993-06-30 Laser diode KR100255691B1 (en)

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