KR100253823B1 - Manufacture of surface wave - Google Patents
Manufacture of surface wave Download PDFInfo
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- KR100253823B1 KR100253823B1 KR1019950018929A KR19950018929A KR100253823B1 KR 100253823 B1 KR100253823 B1 KR 100253823B1 KR 1019950018929 A KR1019950018929 A KR 1019950018929A KR 19950018929 A KR19950018929 A KR 19950018929A KR 100253823 B1 KR100253823 B1 KR 100253823B1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
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- Acoustics & Sound (AREA)
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- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
본 발명의 표면파 소자의 제조방법에 따르면, 벨자르(belljar) 내의 표면파 소자 기판에 Al 전극막을 성막한 후, 벨자르에 N2가스 또는 O2가스를 도입하여 전기한 Al 전극막 위에, 질화막(질화Al막), 산화막(산화Al막) 등의 절연막을 형성한다. 이렇게 형성된 절연막은 금속캡 이면의 도금이 벗겨져 생기는 금속분이나 금속캡을 베이스에 용착시킬때 생기는 용착금속입자의 악영향을 제거할 수 있으며, 따라서 절연저항의 손실을 감소시키고, 다이싱 공정 동안 전극들이 부식되는 것을 방지할 수 있다.According to the method for manufacturing a surface wave element of the present invention, after forming an Al electrode film on a surface wave element substrate in a belljar, a nitride film () is formed on the Al electrode film introduced by introducing N 2 gas or O 2 gas into the bell jar. Insulating films such as an Al nitride film) and an oxide film (Al oxide film) are formed. The insulating film thus formed can eliminate the adverse effects of the metal powder, which is caused by the plating on the back of the metal cap, or the metal particles deposited when the metal cap is deposited on the base, thus reducing the loss of the insulation resistance and corroding the electrodes during the dicing process. Can be prevented.
Description
제1도는 본 발명의 한 실시예에 따른 표면파 소자의 제조방법을 실시하는데에 사용되는 스퍼터링 장치(sputtering apparatus)의 개략도이다.1 is a schematic diagram of a sputtering apparatus used to implement a method of manufacturing a surface wave element according to an embodiment of the present invention.
제2도는 제1도의 방법에 따라 절연막(insulating film)이 형성된 알루미늄(Al) 전극막상에 복수개의 IDT전극들을 형성한 표면파 소자 기판의 사시도이다.2 is a perspective view of a surface wave element substrate on which a plurality of IDT electrodes are formed on an aluminum (Al) electrode film on which an insulating film is formed according to the method of FIG.
제3도는 표면파 소자의 최종 제품이 수납된 금속캡을 구비한 전자 장치(electronic apparatus)의 확대 사시도이다.3 is an enlarged perspective view of an electronic apparatus having a metal cap in which a final product of a surface wave element is housed.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : 벨자르(belljar; 종모양 커버) 2 : 표면파 소자 기판1: belljar (bell-shaped cover) 2: surface wave element substrate
3 : 알루미늄 타겟(Al target) 4 : 가스 도입구(gas inlet)3: Al target 4: Gas inlet
5 : IDT 전극5: IDT electrode
본 발명은 표면파 소자 기판에 피복된 알루미늄(Al) 전극막 위에 질화막(nitride film) 또는 산화막(oxide film)을 형성한 표면파 소자의 제조방법에 관한 것이다. 표면파 소자는 필터, 공진기 등과 같은 전자 장치에 사용된다.The present invention relates to a method of manufacturing a surface wave element in which a nitride film or an oxide film is formed on an aluminum (Al) electrode film coated on a surface wave element substrate. Surface wave devices are used in electronic devices such as filters and resonators.
종래 밀폐형(hermetic type) 표면파 소자는 다음과 같은 문제점들을 갖고 있다 :Conventional hermetic type surface wave devices have the following problems:
(1) 표면파 소자가 수납된 금속캡(metallic cap) 이면의 도금이 벗겨짐으로써 생기는 금속분에 의해 절연저항(insulating resistance ; IR)이 불량해진다.(1) Insulating resistance (IR) is poor due to the metal powder produced by peeling off the back surface of the metallic cap containing the surface wave element.
(2) 금속캡을 베이스(base)에 용착시킬 때 생기는 용착금속 입자에 의해 IR이 불량해진다.(2) The IR is poor due to the deposited metal particles generated when the metal cap is welded to the base.
(3) 특히, 탄탈산리튬(LiTaO3) 기판이나 니오브산리튬(LiNbO3) 기판을 사용한 경우, 다이싱(dicing) 동안, Al-IDT 전극(알루미늄 교차지 트랜스듀서 전극)이 부식한다.(3) Particularly, when a lithium tantalate (LiTaO 3 ) substrate or a lithium niobate (LiNbO 3 ) substrate is used, the Al-IDT electrode (aluminum crossover transducer electrode) corrodes during dicing.
이러한 문제점들과 관련하여 통상적으로 하기의 방법들이 해결책으로 채용되고 있다.In connection with these problems, the following methods are typically employed as a solution.
상기한 문제점 (1)에 대하여, 금속캡의 이면에 수지를 도포하여, 금속분의 낙하를 방지한다.In response to the above problem (1), resin is applied to the back surface of the metal cap to prevent the metal powder from falling.
상기한 문제점 (2)에 대하여, 표면파 소자 상에 이산화규소(SiO2)등의 비활성화 막(passivation film)을 성막하여 IDT 전극을 보호한다.In response to the above problem (2), a passivation film such as silicon dioxide (SiO 2 ) is formed on the surface wave element to protect the IDT electrode.
상기한 문제점 (3)에 대하여, 기판을 다이싱하는 동안, 정제수에 삼산화질소(NO3)등을 혼합하여 Al-IDT 전극의 부식을 방지한다.For the above problem (3), during dicing of the substrate, nitrogen trioxide (NO 3 ) or the like is mixed with purified water to prevent corrosion of the Al-IDT electrode.
그러나, 상기한 문제점 (1)에 대한 종래의 대응 방법은 수지 도포 설비와 공정을, 상기한 문제점 (2)에 대한 종래의 대응 방법은 SiO2등의 비활성화막을 성막하기 위한 설비와 공정을, 그리고 상기한 문제점 (3)에 대한 종래의 대응 방법은 NO3등의 혼입설비와 공정을 각기 별도로 요구하게 되며, 따라서 생산비용 측면에서 불리하다.However, the conventional countermeasures for the above problem (1) include resin coating facilities and processes, and the conventional counterparts for the above problem (2) include facilities and processes for forming inert films such as SiO 2 , and Conventional countermeasures to the above problem (3) require separate mixing facilities such as NO 3 and processes, and are therefore disadvantageous in terms of production cost.
따라서, 본 발명의 목적은, 금속캡 이면에의 수지-도포 공정, 패시베이션막-성막 공정 및 NO3-혼입 공정 등의 별도의 공정이 필요하지 않으며, 칩 다이싱(chip dicing) 동안, Al-IDT 전극의 부식을 방지할 수 있으며, 뿐만아니라 절연저항(IR)이 불량해지는 것을 방지할 수 있는, 표면파 소자의 제조방법을 제공하는 것이다.Therefore, an object of the present invention is that no separate processes such as a resin-coating process, a passivation film-forming process and a NO 3 -incorporation process on the back of the metal cap are not required, and during chip dicing, Al- It is possible to provide a method for manufacturing a surface wave element, which can prevent corrosion of an IDT electrode, as well as prevent poor insulation resistance (IR).
상기한 목적은, 하기의 공정을 포함함을 특징으로 하는, 본 발명에 따른 표면파 소자의 제조방법에 의해 달성될 수 있다 :The above object can be achieved by a method for manufacturing a surface wave device according to the present invention, which comprises the following steps:
벨자르(belljar) 내의 표면파 소자 기판에 Al 전극막을 성막하는 단계 ; 및 벨자르에 N2가스 또는 O2가스를 도입하여, 전기한 Al 전극막 위에 질화막(질화Al막 ; Aluminum nitride film) 또는 산화막(산화Al막 ; Aluminum oxide film)을 형성시키는 단계.Depositing an Al electrode film on the surface wave element substrate in belljar; And introducing an N 2 gas or an O 2 gas into Belzar to form a nitride film (Al nitride film) or an oxide film (Al oxide film).
즉, 본 발명에 따르면, 표면파 소자 기판 위에 Al 전극막을 형성한 후에, N2가스 또는 O2가스를 벨자르에 도입하여, 전기한 Al 전극막 위에 질화막(질화Al막) 또는 산화막(산화 Al막) 등의 절연막(insulating film)을 형성한다. 또한, 본 발명에서는, 이렇게 하여 얻어지는 절연막이 형성된 -Al 전극막(insulating film-added Al electrode film)으로 복수개의 IDT 전극들을 형성하고, 표면파 소자 기판을 다이싱하여 표면파 소자를 형성한다. 이때, 전기한 절연막은 보호막으로서 작용하여, IDT 전극들이 부식되는 것을 방지한다. 또, 보호막은 금속캡 이면의 도금이 벗겨져 생기는 금속분, 및 금속캡을 베이스에 용착시킬 때 생기는 용착금속입자의 악영향도 제거하여, IR 손실을 경감시킬 수 있다.That is, according to the present invention, after the Al electrode film is formed on the surface wave element substrate, N 2 gas or O 2 gas is introduced into Belza, and a nitride film (Al nitride film) or an oxide film (Al oxide film) is placed on the Al electrode film. An insulating film such as a thin film is formed. Further, in the present invention, a plurality of IDT electrodes are formed by an insulating film-added Al electrode film obtained in this way, and a surface wave element substrate is diced to form a surface wave element. At this time, the electric insulating film serves as a protective film to prevent the IDT electrodes from corroding. In addition, the protective film can also remove the adverse effects of the metal powder generated by peeling off the metal cap back surface and the weld metal particles generated when the metal cap is welded to the base, thereby reducing the IR loss.
본 발명의 전술한 목적 및 그외 다른 목적들, 특징, 측면 및 장점들은 첨부된 도면을 참고로 하여 이하 본 발명을 보다 구체적으로 설명함으로써 명백해질 것이다.The above and other objects, features, aspects and advantages of the present invention will become apparent from the following detailed description of the present invention with reference to the accompanying drawings.
제1도는 본 발명의 한 실시예에 따른 표면파 소자의 제조방법을 실시하는데에 사용되는 스퍼터링장치(sputtering apparatus)를 개략적으로 나타낸 것이다. 제1도에 나타낸 스퍼터링 장치는, 종래의 장치와 유사한 형태를 갖고 있다.FIG. 1 schematically shows a sputtering apparatus used to implement a method of manufacturing a surface wave element according to an embodiment of the present invention. The sputtering apparatus shown in FIG. 1 has a form similar to the conventional apparatus.
제1도에서 보는 바와 같이, 벨자르 1안에, LiTaO3나 LiNbO3로 만들어진 표면파 소자 기판 2와, 알루미늄(Al)으로 만들어진 타겟(target) 3을 설치한다. 소정의 진공압 하의 아르곤(Ar) 가스 분위기 중에서, 표면파 소자 기판 2 위에 Al 전극막을 성막한다. 그런 다음, 가스 도입구(gas inlet) 4를 통하여 N2가스를 도입한 후, 계속적으로 성막공정을 실시하여, Al 전극막 표면에 질화막(질화Al막)을 성막한다.As shown in FIG. 1, in Belzar 1 , a surface wave element substrate 2 made of LiTaO 3 or LiNbO 3 and a target 3 made of aluminum (Al) are provided. An Al electrode film is formed on the surface wave element substrate 2 in an argon (Ar) gas atmosphere under a predetermined vacuum pressure. Then, after introducing the N 2 gas through the gas inlet 4, the film forming step is continuously performed to form a nitride film (Al nitride film) on the Al electrode film surface.
본 실시예에서는, N2가스를 도입하여, 표면파 소자 기판 2 위에 질화막(질화 Al막)이 피복된 Al 전극막을 형성하였으나, N2가스 대신에, O2가스를 도입하여 Al 전극막 표면에 산화막(산화Al막)을 성막하여도 무방하다. 어떤 경우든지, 막 두께가 0.2~1.5㎛가 될 때까지, 상기 공정을 실시한다.In this embodiment, an N 2 gas was introduced to form an Al electrode film coated with a nitride film (Al nitride film) on the surface wave element substrate 2, but instead of the N 2 gas, an O 2 gas was introduced to form an oxide film on the Al electrode film surface. (Al oxide film) may be formed into a film. In any case, the above process is carried out until the film thickness becomes 0.2 to 1.5 mu m.
이렇게 하여 얻은, 질화막(질화Al막), 산화막(산화Al막) 등의 절연막이 형성된 Al전극막으로, 제2도에서 보는 바와 같이, 사진석판술(photolithography technique)에 의해, 복수개의 IDT 전극 5를 형성한다. 그런 다음, IDT 전극 5가 형성된 표면파 소자 기판 2를 제2도에 나타낸 점선을 따라 다이싱하여 표면파 소자를 형성한다. 이렇게 하여 형성된, 절연막이 피복된 Al-IDT 전극 5의 경우, 와이어 본딩(wire bonding)이 적합하다.The Al electrode film obtained in this way was formed with an insulating film such as a nitride film (Al nitride film), an oxide film (Al oxide film), and the like by using a photolithography technique as shown in FIG. 2. To form. Then, the surface wave element substrate 2 on which the IDT electrode 5 is formed is diced along the dotted line shown in FIG. 2 to form the surface wave element. In the case of the Al-IDT electrode 5 coated with the insulating film thus formed, wire bonding is suitable.
제3도는 표면파 소자의 최종 제품이 수납된 금속캡을 구비한 전자 장치(electronic apparatus)를 나타낸 것이다. 표면파 소자의 최종 제품 2a는 베이스 6위에 실장되어 있다. 절연막이 피복된 Al-IDT 전극 5에 와이어 본딩을 행한다. 금속캡 7은 베이스 6에 용착한다.3 shows an electronic apparatus with a metal cap in which the final product of the surface wave element is housed. The final product 2a of the surface wave device is mounted on base 6. Wire bonding is performed on the Al-IDT electrode 5 coated with the insulating film. Metal cap 7 is welded to base 6.
본 발명의 표면파 소자의 제조방법에 따르면, 표면파 소자 기판 2에 Al 전극막 5을 형성하는 공정에 덧붙여, N2가스 또는 O2가스를 벨자르 내에 도입하여, Al 전극막 5의 표면에 질화막(질화Al막) 또는 산화막(산화Al막)의 절연막을 형성하는 공정을 더 포함하고 있으며, 이렇게 하여 형성된 절연막은 보호막으로 작용하여, Al-IDT 전극이, 표면파 소자에의 다이싱 동안, 부식되는 것을 방지할 수 있다. 또, 보호막은 금속캡 이면의 도금이 벗겨져 생기는 금속분, 및 금속캡을 베이스에 용착시킬 때 생기는 용착금속입자의 악영향도 제거하여, IR 손실을 경감시킬 수 있다. 게다가, 종래에는 별도의 공정으로 요구되었던, SiO2성막 공정이나, 금속캡 이면에의 수지 도포 공정 등이, 본 발명에서는 불필요하게 되어 생산비용을 감소시킬 수 있다.According to the method for manufacturing a surface wave element of the present invention, in addition to the step of forming the Al electrode film 5 on the surface wave element substrate 2, an N 2 gas or O 2 gas is introduced into Bel'Zar to form a nitride film ( And forming an insulating film of an Al nitride film) or an oxide film (Al oxide film), and the insulating film thus formed serves as a protective film to prevent the Al-IDT electrode from corroding during dicing to the surface wave element. You can prevent it. In addition, the protective film can also remove the adverse effects of the metal powder generated by peeling off the metal cap back surface and the weld metal particles generated when the metal cap is welded to the base, thereby reducing the IR loss. In addition, a SiO 2 film forming process, a resin coating process on the back surface of the metal cap, and the like, which were conventionally required as a separate process, are unnecessary in the present invention, thereby reducing the production cost.
이상에서 본 발명을 상세히 설명하고 예시하였지만, 이는 예시나 설명을 위한 것일 뿐으로서 본 발명의 범위를 한정하는 것으로 해석되어서는 아니되며, 본 발명의 요지나 범위는 첨부된 특허청구의 범위에 의해서만 제한된다.Although the present invention has been described and illustrated in detail above, it should not be construed as limiting the scope of the present invention as merely for purposes of illustration or description, and the gist or scope of the present invention is limited only by the appended claims. do.
Claims (3)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6168211A JPH0832391A (en) | 1994-07-20 | 1994-07-20 | Manufacture of surface wave element |
| JP1994-168211 | 1994-07-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR960006263A KR960006263A (en) | 1996-02-23 |
| KR100253823B1 true KR100253823B1 (en) | 2000-04-15 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019950018929A KR100253823B1 (en) | 1994-07-20 | 1995-06-30 | Manufacture of surface wave |
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| Country | Link |
|---|---|
| JP (1) | JPH0832391A (en) |
| KR (1) | KR100253823B1 (en) |
| CN (1) | CN1127955A (en) |
| SG (1) | SG38855A1 (en) |
| TW (1) | TW322658B (en) |
-
1994
- 1994-07-20 JP JP6168211A patent/JPH0832391A/en active Pending
-
1995
- 1995-06-19 TW TW084106258A patent/TW322658B/zh active
- 1995-06-30 KR KR1019950018929A patent/KR100253823B1/en not_active IP Right Cessation
- 1995-07-19 CN CN95115223A patent/CN1127955A/en active Pending
- 1995-07-19 SG SG1995000901A patent/SG38855A1/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| TW322658B (en) | 1997-12-11 |
| JPH0832391A (en) | 1996-02-02 |
| CN1127955A (en) | 1996-07-31 |
| SG38855A1 (en) | 1997-04-17 |
| KR960006263A (en) | 1996-02-23 |
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