WO2004021398A2 - Wafer-level seal for non-silicon-based devices - Google Patents
Wafer-level seal for non-silicon-based devices Download PDFInfo
- Publication number
- WO2004021398A2 WO2004021398A2 PCT/US2003/018103 US0318103W WO2004021398A2 WO 2004021398 A2 WO2004021398 A2 WO 2004021398A2 US 0318103 W US0318103 W US 0318103W WO 2004021398 A2 WO2004021398 A2 WO 2004021398A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- silicon
- wafer
- sacrificial material
- active area
- seal coating
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00277—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS
- B81C1/00293—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS maintaining a controlled atmosphere with processes not provided for in B81C1/00285
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02921—Measures for preventing electric discharge due to pyroelectricity
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02984—Protection measures against damaging
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
- H03H9/1092—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a cover cap mounted on an element forming part of the surface acoustic wave [SAW] device on the side of the IDT's
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
- B81C2203/0136—Growing or depositing of a covering layer
Definitions
- the present invention relates generally to integrated circuits, and more particularly to integrated circuit fabrication processes and structures.
- Non-silicon-based devices are being manufactured for use in communications and other applications. Such devices are often sensitive to contamination or to the atmosphere in which they operate, and hence it is desirable for them to operate in a controlled atmosphere. Examples of these atmosphere- sensitive non-silicon-based devices include surface acoustic wave (SAW) devices, electro-optic modulators, acoustic-optic devices, and so on.
- SAW surface acoustic wave
- SAW devices are often used in communication devices, such as, for instance, radio frequency (RF) filters in mobile phone handsets and communication networks.
- SAW devices utilize waves that propagate along the surface (or near surface) of a substrate.
- SAW devices include those that utilize piezoelectrically-coupled Rayleigh waves and may also include those that utilize non-Rayleigh (skimming or "leaky") waves.
- a typical SAW filter includes input and output transducers formed on a non- silicon-based piezoelectric substrate, such as, for example, lithium tantalate, lithium niobate, or single crystal quartz.
- the transducers may be metallic electrodes, for example, interleaved aluminum fingers.
- one operating at 2.5 GHz may have a minimum feature size of approximately 0.4 microns for the aluminum fingers of the transducers.
- SAW devices One problem encountered with SAW devices is that the regions of the device where the acoustic waves are present can be very sensitive to the presence of surface contaminants that alter the wave velocities and consequently degrade the device performance. Even a monolayer of contaminant on the surface of the crystal can noticeably alter the device performance. Also, it is desirable for the SAW devices to operate in a low pressure (near vacuum) atmosphere, rather than in atmospheric air. Operating in such a low pressure atmosphere can decrease the viscous damping of the acoustic waves. Another problem associated with SAW devices is that a change in acoustic wave velocity is temperature dependent. In other words, a temperature change can change the velocity of the acoustic waves. This temperature dependence effectively limits the operable temperature range of SAW devices.
- One embodiment of the invention relates to a method for sealing an active area of a non-silicon-based device on a wafer.
- the method includes providing a sacrificial material over at least the active area of the non-silicon-based device, depositing a seal coating over the wafer so that the seal coating covers the sacrificial material, and replacing the sacrificial material with a target atmosphere.
- Another embodiment of the invention relates to a non-silicon-based device sealed at the wafer level (i.e. prior to separation of the die from the wafer).
- the device includes an active area to be protected, a contact area, and a lithographically- formed structure sealing at least the active area and leaving at least a portion of the contact area exposed.
- Another embodiment of the invention relates to a method for sealing an active area of an SAW device on a wafer.
- the method includes providing a sacrificial material over at least the active area of the SAW device, depositing a seal coating over the wafer so that the seal coating covers the sacrificial material, and replacing the sacrificial material with a target atmosphere.
- Another embodiment of the invention relates to an SAW device sealed at the wafer level (i.e. prior to separation of the die from the wafer).
- the device includes an active area to be protected, an electrical contact area, and a lithographically- formed structure sealing at least the active area and leaving at least a portion of the electrical contact area exposed.
- FIG. 1A is a cross-sectional diagram depicting an unsealed non-silicon-based device (in this instance, an SAW device) as fabricated on the surface of a wafer.
- FIG. 1 B, 1C, 1 D, 1 E, 1F, 1G, 1 H and 11 are cross-sectional diagrams depicting various steps in the process of sealing the non-silicon-based device in accordance with an embodiment of the invention.
- FIG. 2 is a flow chart depicting a method for sealing an active area of a non- silicon device (in this instance, a wave propagation area of a SAW device) on a wafer in accordance with an embodiment of the invention.
- a non- silicon device in this instance, a wave propagation area of a SAW device
- Seals may be formed, for example, in metal or ceramic packages.
- a metal package may be welded or soldered to seal it, and the individual leads may be sealed using separate glass seals to separate the leads from the metal.
- a metal seal band attached by glassy material may be used to facilitate the sealing by welding or soldering, and the leads may be embedded in the ceramic itself.
- Other types of packages and other sealing techniques at the packaging level may also be used.
- a different and advantageous way to control the atmosphere in which a non-silicon-based device operates is to fabricate a seal at the wafer level (i.e. prior to separation of the die from the wafer) using integrated circuit manufacturing technology. Fabricating a seal at the wafer level has various advantages over doing so at the packaging level.
- the sealed non-silicon-based device on the die can be tested on the wafer prior to dicing.
- current die sizes for SAW devices are typically in the 1 to 1.5 mm range so that about 6000 to 7000 die may be fabricated on a single four inch wafer.
- the wafer-level sealing of SAW devices allows for the identification and selection of devices that pass the acceptance testing before the die are separated from the wafer and so avoids the more cumbersome testing of individual die after the dicing and also avoids the subsequent packaging currently practiced.
- a potential advantage is that the die so produced by sealing at the wafer level may be mountable on a printed circuit board (PCB) without further packaging.
- PCB printed circuit board
- Such direct mounting onto a PCB may be possible because the non- silicon-based device is sealed at the wafer level during the fabrication process.
- Such direct mounting would avoid the additional costs and processing time associated with mounting in lead frames, wire bonding, and encapsulation. This may advantageously lead to production of the devices with higher quality, higher throughput, higher yield, and less expense.
- Another potential advantage relates to compensating for thermal expansion of the non-silicon crystal. It is possible to compensate for thermal expansion by inducing a strain in the crystal using the seal structure.
- the structural design and material used for the wafer-level seal may be used to induce such a strain.
- the seal material would be chosen such that the material had a thermal coefficient-of- expansion (TCE) mismatch with the crystal.
- TCE thermal coefficient-of- expansion
- the structure would be designed so that the TCE mismatch would effectively produce a strain as a countervailing force against the normal thermal expansion of the crystal.
- FIG. 1A is a cross-sectional diagram depicting an unsealed non-silicon-based device (in this instance, an SAW device) as fabricated on the surface of a wafer.
- the unsealed SAW device includes a substrate 2 and transducer structures 4 and may be fabricated using conventional techniques.
- the substrate 2 is typically a wafer of lithium tantalate, lithium niobate, or single crystal quartz. Such materials enable acoustic waves to travel substantially elastically across the surface of the substrate.
- the transducer structures 4 are typically comprised of aluminum patterned into interdigitated electrode "fingers" and contacts for conducting electrical current to and from the structures 4. Typically, one of the transducer structures is for input and the other is for output. Wave propagation of interest occurs on the surface of the substrate 2 within the transducer structures 4 themselves and in the area between the transducer structures 4.
- the SAW device may be used, for example, as a radio frequency (RF) filter. Many different device configurations may be used.
- FIG. 1B, 1C, 1 D, 1 E, 1 F, 1G, 1 H and 11 are cross-sectional diagrams depicting various steps in the process of sealing the non-silicon-based device in accordance with an embodiment of the invention.
- FIG. 1B is a cross-sectional diagram depicting the structure after the deposition of a sacrificial material 6.
- the sacrificial material may be deposited as a (nearly) uniform coating of polysilicon.
- the use of polysilicon as the sacrificial material 6 has an advantage that the deposition can be used to increase either the bulk or surface conductivity of SAW materials such as lithium niobate or lithium tantalate.
- the sacrificial material may comprise amorphous silicon.
- amorphous silicon may be deposited at a lower temperature than polysilicon.
- the sacrificial material 6 may be a polymer material, such as polyimide, photoresist, or polymethyl methacrylate (PMMA). These polymer sacrificial materials may be attractive when low temperature processing is needed through the sealing process.
- the polysilicon may be deposited at temperatures around 550 degrees
- Amorphous silicon can be deposited at temperatures as low as 150 degrees Celsius and also may be dry etched in a highly selective manner using xenon difluoride gas.
- FIG. 1C is a cross-sectional diagram depicting the structure after lithographic patterning of the sacrificial material 6.
- the patterning removes undesired portions 8 of the sacrificial material while leaving remaining portions 10 of the sacrificial material.
- the remaining sacrificial material 10 covers the portion of the SAW device to be sealed.
- the remaining sacrificial material 10 should cover at least the wave propagation area of the SAW device because that area is to be kept clean of contamination.
- the wave propagation area is generally between the two transducer structures 4 (as shown in FIG. 1A) as well as internal to a substantial portion of those structures 4, so FIG. 1C illustrates the remaining sacrificial material 10 as covering both the area between the transducer structures 4 and the wave propagation regions internal to those structures 4.
- FIG. 1 D is a cross-sectional diagram depicting the structure after deposition of a seal coating 12.
- the seal coating 12 may be deposited over the entire wafer and may comprise a relatively thick layer of, for example, a glassy material.
- the glassy material may be, for example, a spin-on-glass or a sputtered glass.
- the material may comprise silicon dioxide. Alternatively, the material may comprise silicon nitride or metal.
- the seal coating 12 should be of a material and thickness so as to be impermeable to undesired contaminants. The proximity and electrical characteristics of these coatings must be considered in the design of the SAW device.
- FIG. 1 E is a cross-sectional diagram depicting the structure after lithographic patterning of the seal coating 12.
- the patterning removes portions 14 of the seal coating to expose the electrical contact pad portions of the transducers 4.
- the patterning removes portions 16 of the seal coating to create vias (holes) through the seal coating to the sacrificial material below.
- the vias are placed to avoid a wave propagation area of the SAW device.
- FIG. 1 F is a cross-sectional diagram depicting the structure after etching away the remaining sacrificial material 10 by way of the via(s) to create a pocket 18 surrounded by a structure 20 of the seal coating.
- the etching may be done by a dry etching process that does not leave undesirable residue.
- the etching of a polysilicon (or amorphous silicon) sacrificial material on, for example, a lithium tantalate (or lithium niobate) wafer with a sealing layer of silicon dioxide (or silicon nitride or metal) may be accomplished by placing the wafer in a xenon-difluoride atmosphere.
- the xenon- difluoride enters the vias and attacks the sacrificial material with high selectivity (i.e. leaving the substrate and sealing coating substantially un-etched).
- the xenon- difuoride also removes the sacrificial material without leaving a substantial residue on the surface of the wafer. Leaving the acoustically active portion of the surface residue free prevents adverse alterations to wave propagation characteristics of the device.
- a pocket is thereby formed between the seal coating structure 20 and the surface of the wafer in the region previously occupied by the remaining sacrificial material 10.
- a different gas with similar characteristics to xenon- difluoride may be used to dry etch the sacrificial material.
- FIG. 1G is a cross-sectional diagram depicting the structure after the wafer is placed in a target atmosphere. This may be done by placing the wafer in a sputtering, evaporating or other vacuum chamber pumped down to a target atmosphere.
- the target atmosphere may comprise partial pressures of one or more target gases. The gas pressures in the chamber come to equilibrium across the vias 16 to attain the same gas pressures inside the pocket 22 as inside the chamber.
- FIG. 1 H is a cross-sectional diagram depicting the structure after filling the via(s) 16 to seal the target atmosphere 22 in the pocket.
- the vias (holes) 16 through the coating structure 20 may be filled 24, for example, by sputtering or evaporation of silicon dioxide or metal.
- Sputtering when configured to be isotropic in nature, will fill in the vias 16 by coating the rims of the holes and building up material from the rims until the vias 16 are sealed.
- the isotropic nature of sputtering will introduce some of the silicon dioxide or metal into the pocket.
- the coating structure 20 may be designed such that the via(s) 16 are not over or are not in the vicinity of the wave propagation area. This is so that the amount of sputtered material that lands on the wave propagation area may be minimized or reduced to an insubstantial amount that only insignificantly affects the propagation of the surface acoustic waves.
- evaporation may be used where the silicon dioxide or metal beam is positioned at an angle to the wafer. Evaporation tends to be highly directional in nature. By positioning the beam at a substantial angle to the wafer, the highly directional beam can fill 24 the vias 16 without introducing significant evaporated material into the pocket.
- An additional advantage of evaporation is that a higher vacuum may be achieved in an evaporation chamber in comparison to a sputtering chamber.
- the chosen gas and pressure are then locked into the pocket that is now sealed 24.
- the sealed structure formed as described above should provide a hermetic seal.
- a hermetic seal is substantially airtight in that it substantially keeps air or gas from getting in or out. However, even for a hermetic seal, small gas molecules will pass through slowly over time through diffusion and permeation.
- the hermeticity of the seal can be substantially enhanced by coating it with a film of silicon nitride deposited using plasma-enhanced chemical vapor deposition (PECVD).
- PECVD plasma-enhanced chemical vapor deposition
- FIG. 11 is a cross-sectional diagram depicting the structure after electrodes (bumps) 26 have been formed on the contact portions of the transducer structures 4.
- the electrodes 26 may be formed using conventional lithographic techniques. As depicted in FIG 11, the electrodes 26 are formed to be of a height that is greater than the height of the sealing structure. This makes the sealed device suitable for surface-mount soldering.
- the devices Prior to mounting the sealed device onto the PCB board, the devices may be individually tested on the wafer and selected for acceptance or rejection. Thereafter, the wafer may be diced to produce individual die with the devices thereon. And the acceptable die may then be placed into a surface-mount-device tape-and-reel for subsequent surface-mount soldering onto a printed circuit board.
- FIG. 2 is a flow chart depicting a method for sealing an active area of a non- silicon device (in this instance, a wave propagation area of a SAW device) on a wafer in accordance with an embodiment of the invention.
- the method 100 includes nine steps (102, 104, 106, 108, 110, 112, 114, 116, and 118).
- an unsealed device is fabricated on the wafer.
- a cross- section of a fabricated SAW device before being sealed is illustrated in FIG. 1 A.
- the unsealed device may be fabricated using conventional techniques on substrates such as lithium tantalate, lithium niobate, or quartz.
- sacrificial material is deposited onto the wafer.
- a cross-section after deposition of the sacrificial layer is illustrated in FIG. 1 B.
- the sacrificial layer may comprise polysilicon, or amorphous silicon, or possibly a polymeric material.
- the sacrificial layer is patterned using lithography.
- a cross-section after sacrificial layer patterning is illustrated in FIG. 1C.
- the remaining sacrificial material should cover at least the wave propagation area of the SAW device because that is the area to be sealed.
- the seal coating is deposited onto the wafer.
- a cross- section after seal coating deposition is illustrated in FIG. 1 D.
- the seal coating may comprise a glassy material deposited by spin-on or sputtering.
- the material may comprise silicon dioxide.
- the material may comprise silicon nitride or metal.
- the seal layer is patterned using lithography.
- a cross- section after seal layer patterning is illustrated in FIG. 1 E. As described in relation to FIG. 1 E, the patterning exposes the electrical contact pad portions of the transducers 4. In addition, the patterning creates vias (holes) through the seal coating to the sacrificial material below.
- the sacrificial material may be etched by way of the vias to create a pocket above the device.
- a cross-section after etching the sacrificial material is illustrated in FIG.1 F. As described in relation to FIG. 1 F, the etching may be done by a dry etching process that does not leave undesirable residue.
- the substrate is placed into a target atmosphere and allowed to equilibriate.
- a cross-section after placement in the target atmosphere is illustrated in FIG.1G.
- the gas pressures in the chamber come to equilibrium across the vias to attain the same gas pressures inside the pocket as inside the chamber.
- the vias are filled to seal the pocket. This step is performed while the wafer is still in the target atmosphere. A cross-section after the vias are filled is illustrated in FIG. 1 H. As described in relation to FIG. 1 H, the vias may be filled, for example, by sputtering or evaporation of silicon dioxide or metal.
- electrodes 26 are built upon the contacts.
- a cross-section after the vias are filled is illustrated in FIG. 11.
- the electrodes 26 are formed to be of a height that is greater than the height of the sealing structure so as to make the sealed device suitable for surface- mount soldering.
- the ninth step 118 other steps may be performed to mount the device onto a printed circuit board (PCB).
- the devices may be individually tested on the wafer, the wafer may be diced to produce individual die, and the acceptable die may then be placed into a surface-mount-device tape-and- reel for subsequent surface-mount soldering onto the PCB.
- PCB printed circuit board
- non-silicon-based devices may be lithographically constructed to include a means for receiving a signal in electrical form, a means for applying the signal to an active area of the substrate, and a means for hermetically sealing the active area without impeding receiving of the electrical signal.
- the active area to be protected would, of course, correspond to the wave propagation area.
- the technique may also be applicable to other near-surface devices.
- Near-surface devices include, for example, acoustic, optic, non-linear optic, electro-optic, acoustic-optic, and other devices.
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP03791559A EP1540736A4 (en) | 2002-08-28 | 2003-06-09 | Wafer-level seal for non-silicon-based devices |
JP2004532581A JP2005537661A (en) | 2002-08-28 | 2003-06-09 | Sealing of non-silicon-based devices at the wafer stage |
AU2003243451A AU2003243451A1 (en) | 2002-08-28 | 2003-06-09 | Wafer-level seal for non-silicon-based devices |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/231,356 | 2002-08-28 | ||
US10/231,357 | 2002-08-28 | ||
US10/231,356 US6877209B1 (en) | 2002-08-28 | 2002-08-28 | Method for sealing an active area of a surface acoustic wave device on a wafer |
US10/231,357 US6846423B1 (en) | 2002-08-28 | 2002-08-28 | Wafer-level seal for non-silicon-based devices |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2004021398A2 true WO2004021398A2 (en) | 2004-03-11 |
WO2004021398A3 WO2004021398A3 (en) | 2004-06-03 |
Family
ID=31980954
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2003/018103 WO2004021398A2 (en) | 2002-08-28 | 2003-06-09 | Wafer-level seal for non-silicon-based devices |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP1540736A4 (en) |
JP (1) | JP2005537661A (en) |
KR (1) | KR20050044799A (en) |
AU (1) | AU2003243451A1 (en) |
WO (1) | WO2004021398A2 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005099088A1 (en) * | 2004-03-26 | 2005-10-20 | Cypress Semiconductor Corp. | Integrated circuit having one or more conductive devices formed over a saw and/or mems device |
EP2316789A1 (en) * | 2009-11-03 | 2011-05-04 | Nxp B.V. | Device with microstructure and method of forming such a device |
US9021669B2 (en) | 2006-08-07 | 2015-05-05 | Kyocera Corporation | Method for manufacturing surface acoustic wave apparatus |
US11631586B2 (en) | 2012-08-30 | 2023-04-18 | Adeia Semiconductor Bonding Technologies Inc. | Heterogeneous annealing method |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020010056A1 (en) | 2018-07-03 | 2020-01-09 | Invensas Bonding Technologies, Inc. | Techniques for joining dissimilar materials in microelectronics |
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US5777422A (en) * | 1995-09-29 | 1998-07-07 | Sumitomo Electric Industries, Ltd. | Diamond-ZnO surface acoustic wave device having relatively thinner ZnO piezoelectric layer |
US6310420B1 (en) * | 1995-12-21 | 2001-10-30 | Siemens Aktiengesellschaft | Electronic component in particular an saw component operating with surface acoustic waves and a method for its production |
US6509623B2 (en) * | 2000-06-15 | 2003-01-21 | Newport Fab, Llc | Microelectronic air-gap structures and methods of forming the same |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS558191A (en) * | 1978-07-05 | 1980-01-21 | Nec Corp | Elastic surface wave device |
JPH01213018A (en) * | 1988-02-22 | 1989-08-25 | Fujitsu Ltd | Structure of surface acoustic wave device |
JPH09172339A (en) * | 1995-12-19 | 1997-06-30 | Kokusai Electric Co Ltd | Surface acoustic wave device and manufacture of the same |
JP2000114918A (en) * | 1998-10-05 | 2000-04-21 | Mitsubishi Electric Corp | Surface acoustic wave device and its manufacture |
JP2001053178A (en) * | 1999-06-02 | 2001-02-23 | Japan Radio Co Ltd | Electronic component with electronic circuit device sealed and mounted on circuit board, and manufacture of the electronic component |
DE69933380T2 (en) * | 1999-12-15 | 2007-08-02 | Asulab S.A. | Method for hermetically encapsulating microsystems on site |
-
2003
- 2003-06-09 KR KR1020057003297A patent/KR20050044799A/en not_active Application Discontinuation
- 2003-06-09 EP EP03791559A patent/EP1540736A4/en not_active Withdrawn
- 2003-06-09 AU AU2003243451A patent/AU2003243451A1/en not_active Abandoned
- 2003-06-09 WO PCT/US2003/018103 patent/WO2004021398A2/en active Application Filing
- 2003-06-09 JP JP2004532581A patent/JP2005537661A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US5777422A (en) * | 1995-09-29 | 1998-07-07 | Sumitomo Electric Industries, Ltd. | Diamond-ZnO surface acoustic wave device having relatively thinner ZnO piezoelectric layer |
US6310420B1 (en) * | 1995-12-21 | 2001-10-30 | Siemens Aktiengesellschaft | Electronic component in particular an saw component operating with surface acoustic waves and a method for its production |
US6509623B2 (en) * | 2000-06-15 | 2003-01-21 | Newport Fab, Llc | Microelectronic air-gap structures and methods of forming the same |
Non-Patent Citations (1)
Title |
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See also references of EP1540736A2 * |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005099088A1 (en) * | 2004-03-26 | 2005-10-20 | Cypress Semiconductor Corp. | Integrated circuit having one or more conductive devices formed over a saw and/or mems device |
US7750420B2 (en) | 2004-03-26 | 2010-07-06 | Cypress Semiconductor Corporation | Integrated circuit having one or more conductive devices formed over a SAW and/or MEMS device |
US9021669B2 (en) | 2006-08-07 | 2015-05-05 | Kyocera Corporation | Method for manufacturing surface acoustic wave apparatus |
US9882540B2 (en) | 2006-08-07 | 2018-01-30 | Kyocera Corporation | Method for manufacturing surface acoustic wave apparatus |
EP2316789A1 (en) * | 2009-11-03 | 2011-05-04 | Nxp B.V. | Device with microstructure and method of forming such a device |
CN102050417A (en) * | 2009-11-03 | 2011-05-11 | Nxp股份有限公司 | Device with microstructure and method of forming such a device |
CN102050417B (en) * | 2009-11-03 | 2012-07-25 | Nxp股份有限公司 | Device with microstructure and method of forming such a device |
US8426928B2 (en) | 2009-11-03 | 2013-04-23 | Nxp B.V. | Device with microstructure and method of forming such a device |
US11631586B2 (en) | 2012-08-30 | 2023-04-18 | Adeia Semiconductor Bonding Technologies Inc. | Heterogeneous annealing method |
Also Published As
Publication number | Publication date |
---|---|
JP2005537661A (en) | 2005-12-08 |
AU2003243451A1 (en) | 2004-03-19 |
EP1540736A4 (en) | 2006-03-08 |
EP1540736A2 (en) | 2005-06-15 |
AU2003243451A8 (en) | 2004-03-19 |
KR20050044799A (en) | 2005-05-12 |
WO2004021398A3 (en) | 2004-06-03 |
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