KR100246040B1 - Manufacturing method for a liquid crystal display - Google Patents
Manufacturing method for a liquid crystal display Download PDFInfo
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- KR100246040B1 KR100246040B1 KR1019920014226A KR920014226A KR100246040B1 KR 100246040 B1 KR100246040 B1 KR 100246040B1 KR 1019920014226 A KR1019920014226 A KR 1019920014226A KR 920014226 A KR920014226 A KR 920014226A KR 100246040 B1 KR100246040 B1 KR 100246040B1
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- pattern
- conductive film
- transparent conductive
- photoresist
- etching
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 239000004973 liquid crystal related substance Substances 0.000 title description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 35
- 238000000034 method Methods 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000005498 polishing Methods 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims 1
- 238000005530 etching Methods 0.000 abstract description 13
- 238000003486 chemical etching Methods 0.000 abstract description 8
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 abstract description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract description 2
- 238000005260 corrosion Methods 0.000 abstract description 2
- 230000007797 corrosion Effects 0.000 abstract description 2
- 229910017604 nitric acid Inorganic materials 0.000 abstract description 2
- 238000007796 conventional method Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 22
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009125 cardiac resynchronization therapy Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing Of Electric Cables (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
Abstract
투명 전극 패턴의 제조방법에 있어서, 종래에는 기판위에 먼저 투명전도막을 형성한 후 그 위에 포토레지스트(Photo Resist)를 도포하고, 그후 소정의 패턴이 새겨진 마스크를 사용하여 UV노광 및, 현상을 실시하여 포토레지스트 패턴을 형성시킨 뒤, 화학에칭으로 투명전도막을 식각시키고, 다음공정으로 상기 투명전도막 위에 있는 포토레지스트를 제거함으로서 투명 전극 패턴을 완성하게 된다.In the method of manufacturing a transparent electrode pattern, conventionally, a transparent conductive film is first formed on a substrate, and then a photoresist is applied thereon, followed by UV exposure and development using a mask having a predetermined pattern engraved thereon. After forming the photoresist pattern, the transparent conductive film is etched by chemical etching, and the next step is to remove the photoresist on the transparent conductive film to complete the transparent electrode pattern.
이와 같은 종래의 투명 전극 패턴 제조방법은 투명전도막을 식각시키기 위한 화학에칭시 질산, 염산 수용액에 의한 부식이 발생하게 되어 에칭 경계면이 깨끗하지 않을뿐 아니라 에칭 경계면에서 언더에칭(Underetching) 또는 오버에칭(Overetching)이 발생하게 되어 막의 상부와 하부 패턴폭이 달라지게 되는 문제가 따르게 된다.In the conventional method of manufacturing a transparent electrode pattern, corrosion is caused by nitric acid or hydrochloric acid solution during chemical etching for etching the transparent conductive film, so that the etching interface is not clean, and the etching interface is underetched or overetched ( Overetching occurs, which causes a problem that the upper and lower pattern widths of the film are different.
이에 대해 본 발명은 먼저 기판위에 포토레지스트 패턴을 형성하고, 상기 패턴 사이에 포토레지스트 패턴과 동일높이로 투명전도막을 형성시킴으로써 투명전도막의 화학에칭 공정을 생략할 수 있으며, 그 결과 화학에칭 설비 및 에칭액 사용이 필요없게 되어 이에 따른 공정수를 감소시킬 수 있을뿐 아니라, 에칭공정에서 야기되는 언더에칭(Underetching) 및 오버에칭(Overetching)을 방지할 수 있어 에칭폭이 균일한 패턴을 얻을 수 있고, 또한 패턴 형성면이 깨끗한 전극패턴을 제작할 수 있게 된다.In contrast, the present invention can omit the chemical etching process of the transparent conductive film by first forming a photoresist pattern on the substrate and forming a transparent conductive film at the same height as the photoresist pattern between the patterns. Not only does it need to be used, but the number of processes can be reduced, and underetching and overetching caused by the etching process can be prevented, so that a pattern having a uniform etching width can be obtained. It is possible to produce an electrode pattern with a clean pattern forming surface.
Description
제1(a)도 내지 제1(f)도는 종래기술에 따른 투명 전도막 제조방법을 나타낸 단면도.1 (a) to 1 (f) is a cross-sectional view showing a method for manufacturing a transparent conductive film according to the prior art.
제2(a)도 내지 제2(e)도는 본 발명에 따른 투명 전도막 제조방법을 나타낸 단면도이다.2 (a) to 2 (e) are cross-sectional views showing a method for manufacturing a transparent conductive film according to the present invention.
[산업상의 이용분야][Industrial use]
본 발명은 LCD(Liquid Crystal Display)에 관한 것으로, 특히 기판위에 패터닝된 투명 전도막의 제조방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to liquid crystal displays (LCDs), and more particularly, to a method of manufacturing a transparent conductive film patterned on a substrate.
[종래기술 및 문제점][Prior Art and Problem]
최근, OA기기나 휴대용 소형 TV 등의 보급에 따라 이제까지의 전자디스플레이 장치로 브라운관(CRT) 대신에 액정 디스플레이(LCD), 일렉트로일루미너 센서(EL소자), 플라즈마 디스플레이(PDP), 발광다이오드(LED), 형광표시판(VFD) 등의 연구가 활발히 추진되고 일부는 실용화되고 있다.Recently, with the spread of OA devices and portable small TVs, liquid crystal displays (LCDs), electroluminescent sensors (EL devices), plasma displays (PDPs), and light emitting diodes (LEDs) have been replaced by CRTs. ), And researches on fluorescent display panels (VFDs) have been actively promoted, and some have been put into practical use.
그 중에서도 액정 디스플레이(Display)는 극도로 경량으로 박형, 저가 저소비 전력구동으로 집적 회로와의 정합성이 좋은 등의 특징으로 가져 랩톱 컴퓨터(Lap Top Computer)나 포켓 컴퓨터(Pocket computer)의 표시외에 차량 적재용, 칼라(color) TV화상용으로서 그 용도를 급속히 확대하고 있다.Among them, liquid crystal displays are extremely lightweight, thin, low-cost, low power consumption, and have a good match with integrated circuits, so that a vehicle can be loaded in addition to the display of a laptop computer or a pocket computer. Its use is rapidly expanding for color TV images.
이러한 액정 표시관은 개별 스위칭 소자인 박막트랜지스터(Tbin Film Transister; TFT)가 형성된 하부기판, 즉 TFT기판과, 액정층과, 레드(R), 그린(G) 및 블루(B)의 3가지 색필터층이 반복 배열되어 칼라화를 시키는 상부기판 및 상기 상부기판 위에 형성된 오버코트층(Over Coat Layer)과 ITO(Indium Tin Oxide) 투명전극막으로 구성되어 있다.The liquid crystal display tube has a lower substrate, in which a thin film transistor (TFT) is formed as a separate switching element, that is, a TFT substrate, a liquid crystal layer, and three colors of red (R), green (G), and blue (B). The filter layer is repeatedly composed of an upper substrate for colorization, an overcoat layer formed on the upper substrate, and an indium tin oxide (ITO) transparent electrode film.
투명 전극이 형성되어 있는 기판의 투명 전극 패턴 형성과 관련된 종래의 제조방법을 제1도를 참조로 하여 설명한다.A conventional manufacturing method related to the formation of a transparent electrode pattern of a substrate on which a transparent electrode is formed will be described with reference to FIG.
제1(a)도 내지 제1(f)도에 나타낸 바와 같이 CP(Cutting, Polishing) 처리를 한 투명판 유리기판(1)에 투명전도막(2)을 소정의 두께로 도포하고, 그 위에 감광재인 포토레지스터(Photo Resist; 이하 PR이라 한다) (3)를 코팅하여 투명전도막(2)과 PR(3)을 동시에 형성한 후 패턴이 새겨진 마스크(4)를 이용하여 UV노광 및 현상을 실시한다.As shown in FIGS. 1 (a) to 1 (f), the transparent conductive film 2 is applied to a transparent plate glass substrate 1 subjected to CP (Cutting, Polishing) treatment to a predetermined thickness, and then Photoresist (PR) (photosensitive material) (3) is coated to form a transparent conductive film (2) and PR (3) at the same time, and then UV exposure and development using a patterned mask (4). Conduct.
상기 공정후 형성된 소정의 PR패턴(3)을 도시한 것이 제1(d)도이다.First (d) is a diagram showing a predetermined PR pattern 3 formed after the above process.
그후, 제1(e)도에 도시된 바와 같이 화학에칭을 실시하여 투명전도막 패턴(2)을 형성하고, 상기 투명전도막 패턴(2) 상부에 위치한 PR을 스트리핑(STRIPPING) 함으로써 투명 전극 패턴이 완성된다.Thereafter, as illustrated in FIG. 1 (e), chemical etching is performed to form the transparent conductive film pattern 2, and the transparent electrode pattern is stripped by stripping the PR located above the transparent conductive film pattern 2. This is done.
이러한 화학에칭에 의해 패턴을 제작할시에는 ITO를 식각시키기 위한 현상액, 즉 질산, 염산 수용액에 의한 부식이 발생하게 되어 에칭경계면이 깨끗하지 않을 뿐 아니라 제1(f)도에 제시된 바와 같이 에칭경계면에서 언더에칭(Underetching) 또는 오버에칭(Overetching)이 발생하게 되어 막의 패턴이 깨끗하지 않게 된다.When the pattern is manufactured by such chemical etching, corrosion is caused by a developer for etching ITO, that is, nitric acid and hydrochloric acid solution, so that the etching boundary is not clean, and as shown in FIG. Underetching or overetching may occur and the pattern of the film may not be clean.
[발명의 목적][Purpose of invention]
이에 본 발명은 상기와 같은 점을 감안하여 이루어진 것으로 기판위에 먼저 PR패턴을 형성한 뒤에 블랙 매트릭스용 투명전도막을 성막하고 PR층을 식각시킴으로써, 오버에칭(Overetching)이나 언더에칭(Underetching)이 없는 깨끗한 패턴을 만들 수 있는 투명 전도막 제조방법을 제공함에 그 목적이 있다.Accordingly, the present invention has been made in view of the above, and by forming a PR pattern on a substrate first, forming a transparent conductive film for a black matrix and etching the PR layer, thereby eliminating overetching or underetching. It is an object of the present invention to provide a method for manufacturing a transparent conductive film capable of making a pattern.
[발명의 구성][Configuration of Invention]
상기와 같은 목적을 달성하기 위한 본 발명에 따른 투명 전도막 제조방법은, 기판에 소정의 두께로 PR을 도포하는 제1공정과; 상기 공정 후, 패턴이 새겨진 마스크를 이용하여 사진공정을 실시하는 제2공정과; 제2공정 후 노광된 포토레지스트를 현상하여 소정의 PR패턴을 형성시키는 제3공정과; 제3공정에서 형성된 PR패턴과 동일높이로 투명전도막을 형성시키는 제4공정과; 상기 PR과 투명전도막이 동일높이로 형성된 상기 패턴에서 PR을 식각하는 제5공정으로 이루어짐을 특징으로 한다.A transparent conductive film production method according to the present invention for achieving the above object comprises a first step of applying a PR to a substrate with a predetermined thickness; A second step of performing a photo process using a mask having a pattern engraved thereon after the above process; A third step of developing the exposed photoresist after the second step to form a predetermined PR pattern; A fourth step of forming a transparent conductive film at the same height as the PR pattern formed in the third step; The PR and the transparent conductive film is characterized in that the fifth step of etching the PR in the pattern formed to the same height.
[작용][Action]
본 발명은 상술한 수단에 의해 기판위에 먼저 PR패턴을 형성한 뒤에 투명전도막을 형성시킴으로써, 투명전도막의 화학에칭 공정을 생략할 수 있게되어 에칭공정에 야기되는 언더에칭이나 오버에칭을 방지할 수 있게 된다.According to the present invention, the transparent conductive film is formed after the PR pattern is first formed on the substrate by the above-described means, so that the chemical etching process of the transparent conductive film can be omitted, thereby preventing underetching or overetching caused by the etching process. do.
[실시예]EXAMPLE
이하, 첨부된 도면을 참조로 하여 본 발명의 바람직한 실시예를 설명한다.Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings.
제2(a)도 내지 제2(e)도는 본 발명에 따른 투명 전도막 제조방법을 도시한 것으로 상기 실시예에 대해 좀더 상세히 언급하면, 제1공정으로서, 제2(a)도에 도시된 바와 같이 먼저 기판(1) 위에 소정의 두께로 PR막(3)을 도포한 뒤, 제2공정 및 제3공정으로서, 제1공정에서 형성된 PR막(3) 전면에 소정의 패턴이 새겨진 마스크(4)를 이용한 U·V노광 및 현상을 실시하여 제2(c)도에 도시된 바와 같은 네가티브 타입(Negative type)의 PR패턴(3)을 형성시킨다.2 (a) to 2 (e) illustrate a method for manufacturing a transparent conductive film according to the present invention. Referring to the above embodiment in more detail, as shown in FIG. As described above, the PR film 3 is first applied to the substrate 1 to a predetermined thickness, and then, as a second process and a third process, a mask having a predetermined pattern engraved on the entire surface of the PR film 3 formed in the first process ( U and V exposure and development using 4) are performed to form a negative type PR pattern 3 as shown in FIG. 2 (c).
그후, 제4공정으로서, 제2(d)도의 점선으로 도시된 바와 같이 제3공정으로 형성된 상기 PR패턴(3) 상에 ITO를 스퍼터링시킨후 연마하여 ITO막을 평탄화시킨다.Thereafter, as a fourth step, ITO is sputtered and polished on the PR pattern 3 formed in the third step as shown by the dotted line in FIG. 2 (d) to planarize the ITO film.
계속해서, 제4공정 후에 형성된 동일한 높이의 PR패턴(3)과 ITO패턴(2)에서 상기 PR패턴(3)만을 식각하여 제거함으로써 본 발명에 따른 투멍 전극패턴(2)가 완성된다.Subsequently, only the PR pattern 3 is etched and removed from the PR pattern 3 and the ITO pattern 2 having the same height formed after the fourth step, thereby completing the hollow electrode pattern 2 according to the present invention.
[효과][effect]
상술한 바와 같이 본 발명은 먼저, 기판위에 포토레지스트 패턴을 형성하고, 상기 패턴 사이에 PR과 동일한 높이로 투명전도막인 ITO를 스퍼터링함으로써, 투명전도막의 화학에칭 공정을 생략할 수 있게 된다.As described above, the present invention first forms a photoresist pattern on a substrate, and sputters ITO, which is a transparent conductive film, at the same height as PR between the patterns, thereby eliminating the chemical etching process of the transparent conductive film.
그 결과, 화학에칭 설비 및 에칭액 사용이 필요 없게 되어 이에 따른 공정수를 줄일 수 있으며, 또한 에칭공정에서 야기되는 언더에칭 및 오버에칭을 방지할 수 있어 제2(e)도에 도시된 바와 같은 에칭폭이 균일한 패턴을 얻을 수 있게 된다.As a result, the use of chemical etching facilities and etching liquids can be eliminated, thereby reducing the number of processes, and the underetching and overetching caused by the etching process can be prevented, so that etching as shown in FIG. A pattern with a uniform width can be obtained.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019920014226A KR100246040B1 (en) | 1992-08-07 | 1992-08-07 | Manufacturing method for a liquid crystal display |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019920014226A KR100246040B1 (en) | 1992-08-07 | 1992-08-07 | Manufacturing method for a liquid crystal display |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR940004730A KR940004730A (en) | 1994-03-15 |
| KR100246040B1 true KR100246040B1 (en) | 2000-03-15 |
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| KR1019920014226A KR100246040B1 (en) | 1992-08-07 | 1992-08-07 | Manufacturing method for a liquid crystal display |
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