KR100208027B1 - Color filter manufacturing method using organic photo resistor - Google Patents
Color filter manufacturing method using organic photo resistor Download PDFInfo
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- KR100208027B1 KR100208027B1 KR1019960038532A KR19960038532A KR100208027B1 KR 100208027 B1 KR100208027 B1 KR 100208027B1 KR 1019960038532 A KR1019960038532 A KR 1019960038532A KR 19960038532 A KR19960038532 A KR 19960038532A KR 100208027 B1 KR100208027 B1 KR 100208027B1
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- G—PHYSICS
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133514—Colour filters
- G02F1/133516—Methods for their manufacture, e.g. printing, electro-deposition or photolithography
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133512—Light shielding layers, e.g. black matrix
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- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
- G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
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Abstract
본 발명은 액정 디스플레이의 제조공정에서 유기 포토 레지스트(PR;photo resist)을 이용한 칼라 필터 제조방법에 관한 것으로서, 더 상세하게는 노광시 시프트(shift) 및 부분 노광 방법을 이용하여 블랙 매트리스와 적.녹.청(R.G.B) 필터와의 오버랩(overlap) 부위의 단차를 최소화시킴으로써 액정 디스플레이의 특성을 향상시킬 수 있도록 한 유기 포토 레지스트(PR)을 이용한 칼라 필터 제조방법에 관한 것이다. 이를 위한 본 발명은, 유기 포토 레지스트를 이용한 칼라 필터 제조방법에 있어서, 상기 유기 포토 레지스트의 소정의 노광특성을 이용하여 블랙 매트릭스 필터와 적.녹.청 필터의 오버랩 부분에 형성되어 있는 단차부위에 분할노광을 하여 상기 단차를 제거하는 것을 특징으로 한다. 이로써, 본 발명은 칼라 필터의 특성을 향상시킬 수 있는 이점을 제공한다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a color filter using an organic photoresist (PR) in a manufacturing process of a liquid crystal display, and more particularly, to a method of manufacturing a color filter using a black mattress, And more particularly, to a method of manufacturing a color filter using an organic photoresist (PR), which is capable of improving characteristics of a liquid crystal display by minimizing a step of an overlap region with an RGB filter. The present invention provides a method of manufacturing a color filter using an organic photoresist, the method comprising the steps of: forming a black matrix filter and a red, green, And the step difference is removed to remove the step. Thus, the present invention provides the advantage of improving the characteristics of the color filter.
Description
본 발명은 액정 디스플레이의 제조공정에서 유기 포토 레지스트(PR;photo resist)을 이용한 칼라 필터 제조방법에 관한 것으로서, 더 상세하게는 노광시 시프트(shift) 및 부분 노광 방법을 이용하여 블랙 매트리스와 적.녹.청(R.G.B) 필터와의 오버랩(overlap) 부위의 단차를 최소화시킴으로써 액정 디스플레이의 특성을 향상시킬 수 있도록 한 유기 포토 레지스트(PR)을 이용한 칼라 필터 제조방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a color filter using an organic photoresist (PR) in a manufacturing process of a liquid crystal display, and more particularly, to a method of manufacturing a color filter using a black mattress, And more particularly, to a method of manufacturing a color filter using an organic photoresist (PR), which is capable of improving characteristics of a liquid crystal display by minimizing a step of an overlap region with an RGB filter.
예를 들어, 박막 필름 트랜지스터 액정표시소자(이하, TFT LCD라 약칭한다)의 제조에는 소정의 포토 레지스트(이하, PR라 약칭한다)가 다양하게 사용되는데, 그 예로서는 TFT LCD에서 적.녹.청(R.G.B)의 칼라를 구현하는데 사용되거나 블랙 매트릭스(BM;black matrix)를 만드는데 사용된다. 그리고, 최근에는 상기 PR중에서 유기 PR이 칼라 필터의 블랙 매트릭스(BM;black matrix)를 제작할 때 기존의 산화크롬/크롬(CrOx/cr)의 이중층(layer)를 대체하는 물질로 널리 응용되고 있다.For example, a predetermined photoresist (hereinafter abbreviated as PR) is variously used for manufacturing a thin film transistor liquid crystal display device (hereinafter abbreviated as TFT LCD), and examples thereof include a TFT LCD, (RGB) color or to create a black matrix (BM). Recently, organic PR in the PR has been widely applied as a material replacing a conventional chromium oxide / chromium (CrO x / cr) layer when a black matrix (BM) of a color filter is manufactured .
그런데, 상기 유기 PR은 광학 밀도(optical density)가 기존의 크롬(Cr)보다 낮아 두께를 두껍게 형성해야만 하는 단점을 가지고 있다. 따라서, 칼라 필터 표면의 단차가 증가하여 액정 제조공정 진행시 배향막 인쇄 및 셀 캡 제어(cell gap control), 그리고 캡 균일성(gap uniformity) 관점에서 불리하게 작용한다. 그 결과, 추가적인 평탄화 층을 도포해야 하는등 문제점을 가지고 있었다. 즉, 종래 제조공정을 이용하여 칼라 필터를 제조하게 되면, 도 1에 도시되어 있는 바와 같이 필터(10)(20)상에 표면 단차(12)(22)가 형성된다. 일반적으로 유기 블랙 매트릭스(BM) 필터(10)는 그 두께가 대략 1마이크로 미터이기 때문에 표면단차의 크기(15)도 대략 1마이크로 미터에 육박한다. 여기서, 도 1 (a)와 같이 블랙 매트릭스(10)의 패턴을 선행할 경우, R.G.B(20)에 의해 단차(22)가 형성되고, 도 1(b)와 같이 R.G.B(20)의 패턴을 선행할 경우 블랙 매트릭스(10)에 의해 단차(12)가 형성된다. 따라서, 상기와 같은 단차 크기(15)(25)를 가지면서 형성되는 단차(12)(22)들 때문에 칼라 필터의 특성이 저하되는 문제점이 있었다.However, the organic PR has a disadvantage in that the optical density is lower than that of the conventional chromium (Cr), and the thickness of the organic PR must be increased. Accordingly, the steps of the surface of the color filter are increased, which is disadvantageous from the viewpoint of orientation film printing, cell gap control, and gap uniformity in the process of manufacturing a liquid crystal. As a result, there was a problem that an additional planarizing layer had to be applied. That is, when the color filter is manufactured using the conventional manufacturing process, the surface steps 12 and 22 are formed on the filters 10 and 20 as shown in FIG. In general, since the thickness of the organic black matrix (BM) filter 10 is approximately 1 micrometer, the size 15 of the surface step difference also approaches approximately 1 micrometer. When the pattern of the black matrix 10 precedes the pattern of the black matrix 10 as shown in Fig. 1 (a), the step 22 is formed by the RGB 20, The step 12 is formed by the black matrix 10. Therefore, there is a problem that the characteristics of the color filter are deteriorated due to the steps 12 and 22 having the step sizes 15 and 25 as described above.
본 발명은 상기와 같은 문제점을 해결하기 위하여 창출된 것으로서, 부가적인 공정없이 노광시에 시프트 부분노광 방법을 적용하여 블랙 매트릭스 패턴과 적.녹.청 패턴이 오버랩되는 부위의 단차를 최소화하고, 이로써 칼라 필터의 표면을 적절하게 평탄화할 수 있는 유기 포토 레지스트를 이용한 칼라 필터 제조방법을 제공함에 그 목적이 있다.SUMMARY OF THE INVENTION The present invention has been made in order to solve the above problems, and it is an object of the present invention to minimize a step of a portion where a black matrix pattern and an red, green and blue pattern overlap each other by applying a shift portion exposure method at the time of exposure without an additional process, And it is an object of the present invention to provide a method of manufacturing a color filter using an organic photoresist capable of appropriately planarizing a surface of a color filter.
도 1은 종래 칼라 필터 제조방법에 의해 형성되는 필터 표면의 단차를 도시한 단면도,1 is a cross-sectional view showing a step of a filter surface formed by a conventional color filter manufacturing method,
도 2는 본 발명에 따른 유기 포토 레지스트를 이용한 칼라 필터 제조방법에 이용되는 시프트(shift) 부분노광 형태를 도시한 구성도,FIG. 2 is a view showing a shift part exposure pattern used in a method of manufacturing a color filter using an organic photoresist according to the present invention. FIG.
도 3은 본 발명에 의해 형성되는 필터 표면의 단차를 도시한 단면도.3 is a cross-sectional view showing a step of a filter surface formed by the present invention;
도면의 주요부분에 대한 부호의 설명DESCRIPTION OF THE REFERENCE NUMERALS
100 : 적.녹.청 필터150 : 적.녹.청 필터의 표면단차100: Red, Green, Blue Filter 150: Red, Green, Blue The surface level of the filter
200 : 블랙 매트릭스 필터250 : 블랙 매트릭스 필터의 표면단차200: Black matrix filter 250: Surface step of black matrix filter
상기 목적을 달성하기 위하여 본 발명에 따른 유기 포토 레지스트를 이용한 칼라 필터 제조방법은,According to an aspect of the present invention, there is provided a method of fabricating a color filter using an organic photoresist,
유기 포토 레지스트를 이용한 칼라 필터 제조방법에 있어서,A method of manufacturing a color filter using an organic photoresist,
상기 유기 포토 레지스트의 소정의 노광특성을 이용하여 블랙 매트릭스 필터와 적.녹.청 필터의 오버랩 부분에 형성되어 있는 단차부위에 분할노광을 하여 상기 단차를 제거하는 점에 그 특징이 있다.The step difference is removed by applying a divisional exposure to a stepped portion formed in an overlapped portion of the black matrix filter and the red, green and blue filters using the predetermined exposure characteristics of the organic photoresist.
본 발명의 바람직한 실시예에 있어서, 상기 유기 포토 레지스트의 소정의 노광특성은 네거티브(negative) 포토 레지스트 노광특성이거나 포지티브(positive) 포토 레지스트 노광특성이다.In a preferred embodiment of the present invention, the predetermined exposure characteristic of the organic photoresist is a negative photoresist exposure characteristic or a positive photoresist exposure characteristic.
본 발명의 바람직한 실시예에 있어서, 상기 분할노광은 상기 포토 레지스트를 통한 패터닝단계에서 실시된다.In a preferred embodiment of the present invention, the divided exposure is performed in a patterning step through the photoresist.
본 발명의 바람직한 실시예에 있어서, 상기 분할노광시 상기 블랙 매트릭스 필터와 적.녹.청 필터를 상하좌우 및 대각선 방향으로 시프트하면서 노광한다.In a preferred embodiment of the present invention, the black matrix filter and the red, green, and blue filters are exposed while being shifted up, down, left, right, and diagonally.
본 발명의 바람직한 실시예에 있어서, 상기 분할노광시 촬영(shot)수를 필요노광량의 1/n로 분할하여 n회 시프트 노광한다.In a preferred embodiment of the present invention, the number of shots in the divided exposure is divided by 1 / n of the required exposure dose, and the shift exposure is performed n times.
본 발명의 바람직한 실시예에 있어서, 상기 분할노광시 시프트 거리는 대략 0.5마이크로 내지 20마이크로 정도로 한다.In a preferred embodiment of the present invention, the shift distance in the sub-exposure is approximately 0.5 to 20 micro meters.
이하, 첨부된 도면을 참조하면서 본 발명에 따른 유기 포토 레지스트를 이용한 칼라 필터의 제조방법의 바람직한 실시예를 상세하게 설명한다.Hereinafter, preferred embodiments of a method of manufacturing a color filter using an organic photoresist according to the present invention will be described in detail with reference to the accompanying drawings.
본 발명에 따른 유기 포토 레지스트를 이용한 칼라 필터 제조방법은, 블랙 매트릭스 필터와 적.녹.청 필터의 오버랩 부분에 형성되는 단차부위에 분할노광을 함으로써 상기 단차를 제거하는 방법이다. 즉, 종래의 칼라 필터 제조방법은 빛샘을 방지하기 위해 블랙 매트릭스 필터와 적.녹.청 필터의 오버랩이 불가피하고, 이때 포토 레지스트의 특성(예를 들면, 네거티브 특성 또는 포지티브 특성) 때문에 상기 오버랩 부위가 그대로 남게 되어 단차로 작용하는데, 본 발명에서는 상기 단차부위에 가해지는 노광량을 1/n(n은 분할 노광수)로 하여 분할노광함으로써 상기 단차를 제거하는 방법이다.A method of manufacturing a color filter using an organic photoresist according to the present invention is a method of removing the step by performing a division exposure on a step portion formed in an overlap portion of a black matrix filter and red, green and blue filters. That is, in the conventional method of manufacturing a color filter, overlapping of the black matrix filter and the red, green and blue filters is inevitable in order to prevent light leakage. At this time, due to the characteristics of the photoresist (for example, negative characteristic or positive characteristic) In this invention, the step difference is eliminated by dividing and exposing the exposure amount to 1 / n (n is a divided exposure number) applied to the stepped portion.
도 2 및 도 3를 참조하면서 본 발명에 따른 유기 포토 레지스트를 이용한 칼라 필터 제조방법, 예를 들어 4분할 노광을 통한 단차 제거방법을 설명하면 다음과 같다.2 and 3, a method of manufacturing a color filter using an organic photoresist according to the present invention, for example, a step removal method using quadrant exposure will be described.
먼저, 필터(100)(200) 화소의 노광에 필요한 에너지를 1/5로 분할하고, 이 분할 에너지로 도 2에 도시되어 있는 바와 같이 상하좌우 4방향으로 x거리(대략 0.5마이크로 내지 20마이크로)만큼 시프트하면서 노광을 실시한다. 여기서, 바람직하게는 대각선 방향으로로도 시프트하면서 노광을 실시한다. 다섯 번째의 노광은 블랙 매트릭스 필터(200)와 적.녹.청 필터(100)을 정 얼라인(align)하여 노광하는데 이용된다. 즉, 다섯 번째의 노광은 블랙 매트릭스 필터(200)와 적.녹.청 필터(100)를 도 2의 실선으로 도시된 바와 같이 일치시켜 노광한다.First, the energy required to expose the pixels of the filters 100 and 200 is divided into 1/5, and as shown in FIG. 2, the energy required to expose the pixels is multiplied by x distance (approximately 0.5 to 20 micro) And exposure is performed. Here, exposure is preferably carried out while shifting the light in the diagonal direction. The fifth exposure is used to expose the black matrix filter 200 and the red, green and blue filters 100 by aligning them. That is, the fifth exposure exposes the black matrix filter 200 and the red, green and blue filters 100 by matching them as shown by a solid line in FIG.
상기와 같이 필터를 시프트하면서 노광하면 오버랩 부위는 노광량이 1/5로 줄어들어 대부분의 포토 레지스트가 현상(develop)시 제거되어 도 3 (a), (b)에 도시되어 있는 바와 같이 오버랩 부위의 단차(150)(250)는 적절하게 평탄화된다. 상기의 시프트 노광에 있어서, 도 3 (a), (b)에 도시되어 있는 바와 같이 블랙 매트릭스 패턴을 선행하는 경우(도 3(a))와, 적.녹.청 패턴을 선행하는 경우(도 3(b)) 모두가 가능하나 촬영(shot)수를 줄이기 위해서는 R.G.B 패턴을 선행시키는 것이 바람직하다. 적.녹.청(R.G.B) 패턴을 선행하는 경우에 있어서, 적.녹.청 필터는 각각 1회의 노광만 필요하고 블랙 매트릭스 필터 노광시에만 시프트 노광을 적용하면 도 2에 도시된 바와 같은 평탄화된 칼라 필터를 얻을 수 있게 된다.When the filter is shifted as described above, when the exposure is performed while shifting the filter, the amount of exposure is reduced to 1/5, and most of the photoresist is removed upon development. As shown in FIGS. 3 (a) and 3 (b) (150) 250 are appropriately planarized. 3 (a)). In the shift exposure, when the black matrix pattern is preceded (FIG. 3 (a)) and the red, green and blue pattern is preceded 3 (b)), but it is preferable to precede the RGB pattern in order to reduce the number of shots. Green, and blue filters are required to be exposed only once, and when a shift exposure is applied only at the time of exposure to the black matrix filter, the red, green, and blue (RGB) patterns are planarized as shown in FIG. A color filter can be obtained.
상술한 바와 같이 본 발명에 따른 유기 포토 레지스트를 이용한 칼라 필터 제조방법은, 부가적인 공정없이 노광시에 시프트 부분노광 방법을 적용하여 블랙 매트릭스 패턴과 적.녹.청 패턴이 오버랩되는 부위의 단차를 최소화하여 칼라 필터의 표면을 적절하게 평탄화할 수 있기 때문에 칼라 필터의 특성을 향상시킬 수 있는 이점을 제공한다.As described above, in the method of manufacturing a color filter using an organic photoresist according to the present invention, by applying a shift portion exposure method at the time of exposure without an additional process, a step of a portion where the black matrix pattern and the red, The surface of the color filter can be appropriately planarized, thereby providing an advantage of improving the characteristics of the color filter.
Claims (6)
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| KR1019960038532A KR100208027B1 (en) | 1996-09-05 | 1996-09-05 | Color filter manufacturing method using organic photo resistor |
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| KR1019960038532A KR100208027B1 (en) | 1996-09-05 | 1996-09-05 | Color filter manufacturing method using organic photo resistor |
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