KR100207589B1 - Temperature-compensated crystal oscillator employing a multi-chip module type capacitor - Google Patents
Temperature-compensated crystal oscillator employing a multi-chip module type capacitor Download PDFInfo
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- KR100207589B1 KR100207589B1 KR1019960032061A KR19960032061A KR100207589B1 KR 100207589 B1 KR100207589 B1 KR 100207589B1 KR 1019960032061 A KR1019960032061 A KR 1019960032061A KR 19960032061 A KR19960032061 A KR 19960032061A KR 100207589 B1 KR100207589 B1 KR 100207589B1
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- crystal oscillator
- temperature
- compensated crystal
- conductor pattern
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- 239000013078 crystal Substances 0.000 title claims abstract description 30
- 239000003990 capacitor Substances 0.000 title claims abstract description 27
- 239000004020 conductor Substances 0.000 claims abstract description 31
- 238000010304 firing Methods 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 238000007747 plating Methods 0.000 claims description 2
- 238000010030 laminating Methods 0.000 abstract 1
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 7
- 239000003985 ceramic capacitor Substances 0.000 description 4
- 239000010949 copper Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/30—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
- H03B5/32—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
- H03B5/36—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device
- H03B5/366—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device and comprising means for varying the frequency by a variable voltage or current
- H03B5/368—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device and comprising means for varying the frequency by a variable voltage or current the means being voltage variable capacitance diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/02—Details
- H03B5/04—Modifications of generator to compensate for variations in physical values, e.g. power supply, load, temperature
Abstract
본 발명은 온도보상 수정발진기에 관한 것으로서, 특히 멀티-칩 모듈(MCM; multi-chip module)을 이용한 캐패시터를 포함시켜 온도보상 수정발진기를 구성함으로써 발진기의 특성값(Q) 및 C/N(carrier/noise)비 성능을 향상시키고, 그 크기에 있어서 소형화를 달성한 온도보상 수정발진기에 관한 것이다. 이를 위한 본 발명은 복수개의 캐패시터를 포함하여 이루어지는 온도보상 수정발진기에 있어서, 상기 캐패시터는, 소정의 그린쉬트(green sheet)에 비아 홀(via hole)을 형성하고 소정의 도체를 인쇄 및 소성하여 내부 도체패턴, 그라운드 도체패턴 및 공진기 중심도체패턴을 형성하고 소정의 도체배선을 부착한 복수의 층들과 복수의 유전체층을 적층하여 열압착한 후 최적소성하여 다층기판을 형성함으로써 이루어지는 멀티-칩 모듈형 캐패시터인 점에 그 특징이 있다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a temperature compensated crystal oscillator, and more particularly, to a temperature compensated crystal oscillator including a capacitor using a multi-chip module (MCM) and a characteristic value (Q) and a C / N (carrier) of the oscillator. The present invention relates to a temperature compensated crystal oscillator which improves the ratio performance and achieves miniaturization in size. To this end, the present invention is a temperature compensation crystal oscillator comprising a plurality of capacitors, the capacitors, via holes formed in a predetermined green sheet (green sheet) to print and fire a predetermined conductor inside A multi-chip modular capacitor formed by forming a conductor pattern, a ground conductor pattern, and a resonator center conductor pattern, laminating a plurality of layers having a predetermined conductor wiring and a plurality of dielectric layers and thermally compressing them, and then optimally firing to form a multilayer board. There is that characteristic in that it is.
Description
본 발명은 온도보상 수정발진기에 관한 것으로서, 특히 멀티-칩 모듈(MCM; multi-chip module)을 이용한 캐패시터를 포함시켜 온도보상 수정발진기를 구성함으로써 발진기의 특성값(Q) 및 C/N(carrier/noise)비 성능을 향상시키고, 그 크기에 있어서 소형화를 달성한 온도보상 수정발진기에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a temperature compensated crystal oscillator, and more particularly, to a temperature compensated crystal oscillator including a capacitor using a multi-chip module (MCM; The present invention relates to a temperature compensated crystal oscillator which improves the ratio performance and achieves miniaturization in size.
예를 들어, 휴대전화기와 같은 통신단말기에는 온도에 따른 발진주파수의 변동을 보상해주는 온도보상 수정발진기가 사용되고 있다. 도 1에 상기와 같은 역할을 하는 온도보상 수정발진기의 개략적인 형태를 나타내 보였다. 도 1을 참조하면, 종래의 온도보상 수정발진기는 회로기판(12)과, 상기 회로기판(12)상에 배치되어 부착되는 진동자(3) 및 회로소자들(11)과, 상기 회로기판(12)의 하부에 배치되어 이 회로기판(12)을 고정시키는 하부기판(13)를 포함하여 이루어진다. 여기서, 상기 회로소자들(11)에 의해 온도보상을 수행하는 회로부가 구성되는데, 이를 도 2에 블록으로 나타내 보였다. 도 2를 참조하면, 온도보상 회로부는 온도보상부(22)와, 증폭부(24), 및 진동자(3)를 포함하여 이루어지는데, 여기서 상기 온도보상부(22)는 복수의 캐패시터(미도시)를 구비하여 이루어진다. 상기 종래의 온도보상부(22)에 구비되는 캐패시터는 주로 적층세라믹 캐패시터(MLCC; multi-layer ceramic capacitor)들 이었다.For example, a temperature compensation crystal oscillator is used in a communication terminal such as a mobile phone to compensate for variations in oscillation frequency according to temperature. Figure 1 shows a schematic form of a temperature compensated crystal oscillator that serves as described above. Referring to FIG. 1, a conventional temperature compensation crystal oscillator includes a circuit board 12, a vibrator 3 and circuit elements 11 disposed on and attached to the circuit board 12, and the circuit board 12. And a lower substrate 13 disposed below the circuit board 12 to fix the circuit board 12. Here, the circuit elements for performing the temperature compensation by the circuit elements 11 is configured, which is shown as a block in FIG. Referring to FIG. 2, the temperature compensating circuit part includes a temperature compensating part 22, an amplifying part 24, and a vibrator 3, wherein the temperature compensating part 22 includes a plurality of capacitors (not shown). ) Is made. Capacitors provided in the conventional temperature compensator 22 are mainly multilayer ceramic capacitors (MLCCs).
그런데, 상기와 같이 적층세라믹 캐패시터(MLCC)를 포함하여 이루어지는 종래 회로기판 형태의 온도보상 수정발진기는 도 1에 도시되어 있는 바와 같이 그 크기가 크고 적층세라믹 캐패시터를 포함한 다수의 회로소자와 진동자가 외부로 노출되어 있기 때문에 외부환경에 의해 손상을 받기 쉬운 문제점과 그 형태가 조잡하여 미관이 나쁜 문제점이 있었다. 또한, 종래의 온도보상 수정발진기는 복수개(대략 6개정도)의 적층세라믹 캐패시터를 사용하기 때문에 그 특성값 Q(Q=1/ωCR; C는 용량성값, R는 저항값)이 낮아지고, 이 때문에 C/N(carrier/noise) 비(C/N비는 특성값(Q)의 제곱에 비례함)가 저하되어 성능을 향상시킬 수 없는 문제점이 있었다.However, as shown in FIG. 1, a temperature compensation crystal oscillator in the form of a conventional circuit board including a multilayer ceramic capacitor (MLCC) as described above is large in size and has a large number of circuit elements and vibrators including a multilayer ceramic capacitor. Because it is exposed to the problem that is easy to be damaged by the external environment and its shape is coarse, there was a problem of poor aesthetics. In addition, since the conventional temperature compensation crystal oscillator uses a plurality (approximately six) of laminated ceramic capacitors, its characteristic value Q (Q = 1 / ωCR; C is capacitive value, R is resistance value) is lowered. As a result, the C / N ratio (C / N ratio is proportional to the square of the characteristic value Q) is deteriorated and there is a problem in that the performance cannot be improved.
본 발명은 상기와 같은 문제점을 해결하기 위하여 창출된 것으로서, 멀티-칩 모듈(MCM)을 이용한 캐패시터를 포함시켜 온도보상 수정발진기를 구성함으로써 발진기의 특성값(Q) 및 C/N비 성능을 향상시키고, 그 크기에 있어서 소형화를 달성한 온도보상 수정발진기를 제공함에 그 목적이 있다.The present invention has been made to solve the above problems, including a capacitor using a multi-chip module (MCM) to configure the temperature compensation crystal oscillator to improve the characteristic value (Q) and C / N ratio performance of the oscillator It is an object of the present invention to provide a temperature compensated crystal oscillator which achieves miniaturization in size.
도 1은 종래 온도보상 수정발진기를 개략적으로 도시한 사시도,1 is a perspective view schematically showing a conventional temperature compensation crystal oscillator,
도 2는 일반적인 온도보상 수정발진기의 회로블록을 개략적으로 도시한 회로도,2 is a circuit diagram schematically showing a circuit block of a general temperature compensation crystal oscillator;
도 3 및 도 4는 본 발명에 따른 온도보상 수정발진기에 채용되는 멀티-칩 모듈(MCM)형 캐패시터의 제조공정을 설명하기 위한 공정도, 및 개념도,3 and 4 are process diagrams and conceptual diagrams for explaining the manufacturing process of the multi-chip module (MCM) type capacitors employed in the temperature compensation crystal oscillator according to the present invention;
도 5는 본 발명에 따른 온도보상 수정발진기에 채용되는 멀티-칩 모듈형 캐패시터를 도시한 단면도.5 is a cross-sectional view showing a multi-chip modular capacitor employed in the temperature compensation crystal oscillator according to the present invention.
도면의 주요부분에 대한 부호의 설명Explanation of symbols for main parts of the drawings
31...비아-홀(via hole) 32...내부도체층31 Via hole 32 Inner conductor layer
33...그라운드 도체패턴 34...공진기 중심도체33 Ground conductor pattern 34 Resonator center conductor
36...표면전극 37...유전체층(또는, 더미층)36 Surface electrode 37 Dielectric layer (or dummy layer)
39...측면전극 100...MCM형 캐패시터39.Side electrode 100 ... MCM type capacitor
상기 목적을 달성하기 위하여 본 발명에 따른 온도보상 수정발진기는, 복수개의 캐패시터를 포함하여 이루어지는 온도보상 수정발진기에 있어서, 상기 캐패시터는, 소정의 그린쉬트(green sheet)에 비아 홀(via hole)을 형성하고 소정의 도체를 인쇄 및 소성하여 내부 도체패턴, 그라운드 도체패턴 및 공진기 중심도체패턴을 형성하고 소정의 도체배선을 부착한 복수의 층들과 복수의 유전체층을 적층하여 열압착한 후 최적소성하여 다층기판을 형성함으로써 이루어지는 멀티-칩 모듈형 캐패시터인 점에 그 특징이 있다.In order to achieve the above object, the temperature compensated crystal oscillator according to the present invention includes a plurality of capacitors, wherein the capacitor includes a via hole in a predetermined green sheet. Form the inner conductor pattern, the ground conductor pattern, and the resonator center conductor pattern by forming and printing and firing the predetermined conductors. Its characteristics are that it is a multi-chip modular capacitor formed by forming a substrate.
본 발명의 바람직한 실시예에 있어서, 상기 소정의 도체는 구리(Cu), 팔라듐(Pd), 은(Ag), 금(Au)등으로 이루어진다.In a preferred embodiment of the present invention, the predetermined conductor is made of copper (Cu), palladium (Pd), silver (Ag), gold (Au) and the like.
이하, 첨부된 도면을 참조하면서 본 발명에 따른 온도보상 수정발진기의 바람직한 실시예를 상세하게 설명한다.Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment of the temperature compensation crystal oscillator according to the present invention.
본 발명에 따른 온도보상 수정발진기는, 멀티-칩 모듈(MCM; multi-chip module)형 캐패시터를 채용함으로써 온도보상 수정발진기의 크기를 소형화하고, 그 특성값(Q)을 크게 하여 C/N 비를 향상시킨 것으로서, 소정의 그린쉬트(green sheet)에 비아 홀(via hole;31)을 형성하고 팔라듐/은(Pd/Ag) 도체를 인쇄 및 소성하여 내부 도체패턴(32), 그라운드 도체패턴(33) 및 공진기 중심도체패턴(34)을 형성하고 소정의 도체배선을 부착한 복수의 각층(36)과 복수의 유전체층(또는, 더미(dummy)층)(37)을 적층하여 열압착한 후 최적소성하여 다층기판을 형성함으로써 이루어지는 멀티-칩 모듈형 캐패시터(100)를 사용한다.The temperature compensated crystal oscillator according to the present invention employs a multi-chip module (MCM) type capacitor to reduce the size of the temperature compensated crystal oscillator, increase its characteristic value (Q), and increase the C / N ratio. In this embodiment, a via hole 31 is formed in a predetermined green sheet, and a palladium / silver (Pd / Ag) conductor is printed and fired to form an internal conductor pattern 32 and a ground conductor pattern ( 33) and a plurality of layers 36 and a plurality of dielectric layers (or dummy layers) 37 formed with a resonator center conductor pattern 34 and attached with a predetermined conductor wiring are thermally compressed and then optimally The multi-chip modular capacitor 100 formed by firing to form a multilayer substrate is used.
상기와 같이 본 발명의 온도보상 수정발진기에 채용되는 멀티-칩 모듈형 캐패시터의 제조공정을 도 3 내지 도 5를 참조하면서 보다 더 상세하게 설명하면 다음과 같다.The manufacturing process of the multi-chip modular capacitor employed in the temperature compensation crystal oscillator of the present invention as described above will be described in more detail with reference to FIGS.
먼저, 그린쉬트를 준비하고, 이 그린쉬트를 소성하고 소성된 그린시트의 표면에 표면회로 패턴(또는, 전극;36)을 형성하며, 상기 그린쉬트에 소정의 비아-홀(31)을 형성한 후 소정의 도체(바람직하게는, Cu/Pd/Ag/Au로 이루어지는 도체임) 를 인쇄 및 소성하여 내부 도체패턴(또는, 내부도전층;32)을 형성한다. 이를 도 3의 S1단계에서 S3단계에, 그리고 도 4의 (a)에서 (d)에 바람직하게 나타내 보였다. 그 다음, 상기와 동일한 방식으로 그라운드 도체패턴(33), 공진기 중심도체패턴(34)을 형성한다. 이를 도 4의 (e)에서 (g)에 나타내 보였다. 그리고, 도체배선을 부착한 복수개의 층(36)과 복수개의 더미(dummy)층(37)을 적층하여 열압착 후 최적소성하고 내외부면을 형성한 후, 절단한 다음 측면전극(39)을 형성하고 도금처리하면, 도 5에 도시되어 있는 바와 같은 멀티-칩 모듈형 캐패시터(100)가 제조된다. 이를 도 3의 S4단계에서 S9단계에, 그리고 도 4의 (h)에서 (j)에 나타내 보였다.First, a green sheet is prepared, the green sheet is fired, a surface circuit pattern (or electrode) 36 is formed on the surface of the fired green sheet, and a predetermined via-hole 31 is formed in the green sheet. After that, a predetermined conductor (preferably a conductor made of Cu / Pd / Ag / Au) is printed and fired to form an inner conductor pattern (or an inner conductive layer 32). This is preferably shown in step S1 to S3 of Figure 3, and (d) in Figure 4 (a). Then, the ground conductor pattern 33 and the resonator center conductor pattern 34 are formed in the same manner as described above. This is shown in Figure 4 (e) to (g). Then, a plurality of layers 36 and a plurality of dummy layers 37 with conductor wirings are laminated, optimally baked after thermal compression, and formed with an inner and outer surface, and then cut and then formed side electrodes 39. And plating, a multi-chip modular capacitor 100 as shown in FIG. 5 is fabricated. This is shown in step S4 to S9 of Figure 3, and (j) in Figure 4 (h).
상술한 바와 같이 공진기 중심도체(34)와 내부 도전층(32), 유전체층(또는, 더미층;37)를 포함하여 제조되는 멀티-칩 모듈형 캐패시터(100)에 의하면 이 캐패시터는 병렬로 구성되어 있기 때문에, 용량성값(QTL)이 아래와 같은 식으로 되어 종래의 용량성값(QTK) 보다 더 크게 된다.As described above, according to the multi-chip modular capacitor 100 manufactured by including the resonator center conductor 34, the inner conductive layer 32, and the dielectric layer (or the dummy layer) 37, the capacitors are configured in parallel. Therefore, the capacitive value Q TL becomes as follows and becomes larger than the conventional capacitive value Q TK .
1/QTL= 1/Q1+ 1/Q2+....+1/QL 1 / Q TL = 1 / Q 1 + 1 / Q 2 + .... + 1 / Q L
1/QTK= 1/Q1+ 1/Q2+....+1/QK 1 / Q TK = 1 / Q 1 + 1 / Q 2 + .... + 1 / Q K
즉, K L 이기 때문에, 본 발명에 따른 캐패시터의 용량성값(QTL)이 종래기술의 캐패시터의 용량성값(QTK) 보다 더 크게 되고, 이 때문에 온도보상 수정발진기의 특성값(Q)이 더 커지고, 이 때문에 C/N 비도 더 크게 증가된다.That is, since it is KL, the capacitive value Q TL of the capacitor according to the present invention becomes larger than the capacitive value Q TK of the capacitor of the prior art, and therefore, the characteristic value Q of the temperature compensation crystal oscillator becomes larger. For this reason, the C / N ratio is further increased.
상술한 바와 같이 본 발명에 따른 온도보상 수정발진기는, 멀티-칩 모듈(MCM)을 이용한 캐패시터를 포함시켜 온도보상 수정발진기를 구성함으로써 발진기의 특성값(Q) 및 C/N비 성능을 향상시키고, 그 크기에 있어서 소형화를 달성할 수 있는 이점을 제공한다.As described above, the temperature compensated crystal oscillator includes a capacitor using a multi-chip module (MCM) to configure the temperature compensated crystal oscillator to improve the characteristic value (Q) and the C / N ratio performance of the oscillator. This provides an advantage of achieving miniaturization in size.
Claims (2)
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| Application Number | Priority Date | Filing Date | Title |
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| KR1019960032061A KR100207589B1 (en) | 1996-07-31 | 1996-07-31 | Temperature-compensated crystal oscillator employing a multi-chip module type capacitor |
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| KR1019960032061A KR100207589B1 (en) | 1996-07-31 | 1996-07-31 | Temperature-compensated crystal oscillator employing a multi-chip module type capacitor |
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| KR100348443B1 (en) * | 2000-07-13 | 2002-08-10 | 엘지전자 주식회사 | Resonator using cavity filled with high dielectric pastes and fabricating method thereof |
| KR100399641B1 (en) * | 2001-11-29 | 2003-09-29 | 삼성전기주식회사 | Temperature Compensated Crystal Oscillator |
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