KR100207430B1 - Tma for use in an optical projection system - Google Patents

Abstract

An array of M.times.N thin film type optical path adjusting devices according to the present invention includes an array of driving substrates, an inactive layer, an etch stop layer, and M.times.N driving structures. Each of the driving structures includes a thin-film-type first electrode, a thin-film-type second electrode, an elastic portion, and a plug having protrusions and through-holes at the other end and further having horizontal stripes. The horizontal stripes, protrusions and etch holes increase the light efficiency of each thin film optical path adjustment device, facilitate removal of the rinsing liquid, and facilitate removal of the thin film sacrificial layer.

Description

Thin film type optical path adjustment device for projection type image display device

Sectional views illustrating a method of manufacturing an array of conventional MxN thin film type optical path adjustment devices from Figs. 1a to 1g. Fig.

FIG. 2 is a cross-sectional view illustrating an array of M × N thin film type optical path adjusting devices according to the present invention; FIG.

Sectional view illustrating a method of manufacturing an array of M x N thin-film-type optical path adjusting devices shown in Figs. 3a to 3n and Fig. 2;

4a to 4d are plan views of the thin film layers constituting each thin film type optical path adjusting device shown in Fig. 2; Fig.

DESCRIPTION OF THE REFERENCE NUMERALS

190: driving part 195: light reflecting part

200: driving structure 210: driving substrate

212: substrate 214: connection terminal

220: inert layer 230: etch stop layer

240: thin film type sacrificial layer 255: elastic part

265: thin-film second electrode 275:

285: thin-film first electrode 287: horizontal stripe

295: Plug 301: Thin film type optical path control device

The present invention relates to a projection type image display apparatus, and more particularly to an array of M × N thin film type optical path adjustment apparatuses for a projection type image display apparatus and a manufacturing method thereof.

The image display apparatus is divided into a direct view type image display apparatus and a projection type image display apparatus according to a display method. The projection type image display apparatus has a feature of displaying high image quality even on a large screen. In such a projection type image display apparatus, the light flux from the light source is uniformly reflected on the M x N optical path adjusting apparatuses, in which each mirror is coupled to each actuator, and the actuator is deformed by the applied electric field It is made of electrostrictive or piezoelectric material.

The reflected light from each mirror is incident on the hole of the optical baffle. When an electric signal is applied to each actuator, the overall position of each mirror is changed, and the optical path of the reflected light from each mirror is changed. As the optical path of each reflected light flux changes, the amount of light passing through the aperture of the optical device changes to control the intensity of the light. The light beam passing through the hole is projected onto the projection surface through a suitable optical device such as a projection lens and displays an image thereon.

1a to 1g are cross-sectional views illustrating a method of manufacturing the array 100 of M × N thin-film type optical path adjusting devices 101. In the above, M and N are integers.

The manufacturing process of the array 100 includes a substrate 12, an array of M x N transistors (not shown), and an array of M x N connecting terminals 14, ).

In the next step, a thin film sacrificial layer 24 is formed on the upper surface of the driving substrate 10. When the thin sacrificial layer 24 is formed of metal, a sputtering method or a vapor deposition method is used to form a PSG Spin coating or chemical vapor deposition (CVD) is used for the formation of polycrystalline silicon, and chemical vapor deposition (CVD) is used for the formation of polycrystalline silicon.

Subsequently, a support layer 20 is formed which includes an array of M x N support portions 22 that are wrapped by a thin film sacrificial layer 24, which is supported by a thin film sacrificial layer 24, Forming an array of MxN vacancies (not shown) around the connection terminal 14 by using the above-described method; And is formed as shown in FIG. 1A by a process of forming the supporting portions 22 by sputtering or chemical vapor deposition on each of the hollow holes. The support portion 22 is made of an insulating material.

In the next step, an elastic layer 30 made of the same insulating material as the support 22 is formed on the support layer 20 using sol-gel, sputtering or chemical vapor deposition .

Next, a metal-made plug 26 is formed in each support 22, which first penetrates from the top of the elastic layer 30 to the top of the connection terminal 14 using an etching method To form an array of M x N holes (not shown); And is formed as shown in FIG. 1 (b) by a process of filling the hole with a metal.

In the next step, a thin-film second layer 40 made of a material having good electrical properties is formed on the elastic layer 30 including the plug 26 using a sputtering method. The thin-film second layer 40 is electrically connected to the transistor through a plug 26 formed in the support portion 22.

Next, a thin film type strained layer 50 made of a piezoelectric material such as P2T is formed on top of the thin film type second layer 40 using a sol-gel, sputtering or chemical vapor deposition method, as shown in FIG. .

In the next step, the thin film type strained layer 50, the thin film type second layer 40 and the elastic layer 30 are respectively arrayed as an array of M x N thin film type deformations 55 by using photolithography or laser cutting, M As shown in FIG. 1D, until the support layer 20 is exposed, with the array of the N thin film second electrodes 45 and the array of the M x N elastic portions 35, as shown in Fig. Each of the thin film second electrodes 45 is electrically connected to a transistor through a plug 26 formed in each support portion 22 and functions as a signal electrode in the thin film type optical path adjusting device 101.

Next, each of the thin film deforming portions 55 is heat-treated to form an array of M x N heat-treated structures (not shown) so as to cause a phase transition. Since each of the thin film deforming parts 55 is sufficiently thin, if the respective deforming parts 55 are made of a piezoelectric material, they can be polarized by an electric signal applied when driving the thin film type optical path adjusting device 101, You do not have to.

After this step, an array of M x N thin-film first electrodes 65 made of a material having good electrical properties and reflecting light is formed on top of the thin-film deformation portions 55 of the array of M x N heat-treated structures The first thin film electrode 65 has good electrical properties to completely cover the top of the array of M x N heat treated structures including the exposed support layer 20 as shown in FIG. And then selectively removing the layer 60 by using an etching method. As a result, as shown in FIG. 1F, the layer 60 is formed of M × N Each of the optical path adjusting device structures 111 includes an upper surface and four side surfaces. Each of the thin-film-type first electrodes 65 acts as a mirror as well as a bias electrode in the thin-film type optical path adjusting device 101.

As a subsequent step, the upper surface and the four sides of each light path adjusting device structure 111 are completely wrapped with a thin film protective layer (not shown).

The thin film sacrificial layer 24 of the support layer 20 is removed by an etching method. Finally, the thin film type protective layer is removed by using the etching method to form the array 100 of M × N thin film type optical path adjusting devices 101 as shown in FIG. 1g.

There are many problems in the manufacturing method of the array 100 of the M x N thin film type optical path adjusting devices 101. After rinsing the thin film sacrificial layer 24, a rinsing process of the etching solution or chemical solvent used for removing the thin film sacrificial layer is generally followed by rinsing liquid which is removed by evaporation. The surface tension of the rinsing liquid pulls the elastic part 35 downward toward the drive substrate 10 so that sticking of the elastic part 35 to the drive substrate 10 Thereby adversely affecting the driving of each thin-film type optical path adjusting device 101, and the overall driving of the array 100 is adversely affected.

Further, in order to remove the thin film sacrificial layer 24 of the supporting layer 20 for forming the driving space of each thin film optical path adjusting device 101 by using the etching method, an etching solution or a chemical solvent is surrounded by the thin film protective layer The thin film type sacrifice layer 24 of the support layer 20 is not only removed much time but also the thin film type sacrifice layer 24 The thin film type optical path adjusting device 101 is adversely affected and the overall driving of the array 100 is also adversely influenced by leaving a residue of the thin film type sacrificial layer in the driving space to be made, do.

In addition to the problems of the manufacturing method of the array 100 of the thin film optical path adjusting device 101, the array 100 manufactured by the manufacturing method has a problem in the overall optical efficiency. When the thin film type optical path adjusting device 101 is deformed by an electric field applied to the thin film deforming portion 55, the thin film type first electrode 65 attached to the thin film type optical path adjusting device 101 and functioning as a mirror Deformed to form a curved upper surface instead of forming a flat upper surface for the reflected light beam. Therefore, the overall light efficiency of the array 100 is lowered.

Therefore, it is a main object of the present invention to provide an M × N optical path adjusting device having a new structure that can easily prevent occurrence of sticking to the elastic portion driving substrate when the rinsing liquid is removed in the manufacturing process of the array of thin- Film type optical path adjusting device.

Another object of the present invention is to provide an array of M.times.N thin film type optical path adjusting devices having a new structure that can facilitate complete and effective removal of a thin film sacrificial layer in the manufacturing process of an array of thin film optical path adjusting devices.

It is still another object of the present invention to provide an array of M x N thin film type optical path adjusting devices having improved optical efficiency.

It is still another object of the present invention to provide a method of manufacturing an array of such M × N thin film type optical path adjusting devices.

In order to achieve the object of the present invention, an array of M × N optical path adjusting devices for a projection type image display apparatus includes: A drive substrate including an array of M x N connection terminals, each of which has a connection terminal electrically connected to the associated transistor, an array of M x N transistors, and a substrate; An inert layer formed on an upper portion of the driving substrate; An etch stop layer formed on top of the passivation layer; Each drive structure has one end and the other end, and each drive structure has a protruding portion and an etching hole penetrating the drive structure at the other end. Each drive structure includes a thin film type first electrode, a thin film type deformation portion, Wherein the thin film type first electrode is located at the top of the thin film type deformation portion and divided into a driving portion and a light reflection portion by a horizontal stripe to be electrically separated from each other, Wherein the driving portion of the first electrode is grounded so that the driving portion functions as a bias electrode and a mirror and the light reflecting portion functions as a mirror respectively and the thin film deforming portion is positioned on the upper portion of the thin film second electrode, And is electrically connected to the associated transistor through a plug and connection terminal, And the elastic portion is positioned at the lower portion of the thin film type second electrode and the bottom portion of one end of the elastic portion functions as the etching prevention layer and the inactive portion of the thin film type second electrode, Layer type deformable portion to the upper portion of the associated connection terminal to electrically connect the thin-film-type second electrode to the connection terminal, and the M × And includes an array of N drive structures.

According to another aspect of the present invention, there is provided a method of manufacturing an array of M × N optical path adjusting devices for a projection type image display device, Preparing a drive substrate including an array of M x N connection terminals, each of which has a connection terminal electrically connected to the associated transistor, an array of M x N transistors, and a substrate; Depositing an inert layer on top of the driving substrate; Depositing an etch stop layer over the inactive layer; Depositing a thin film sacrificial layer having an upper surface on top of the etch stop layer; A step of flattening the upper surface of the thin film sacrificial layer; Forming an array of M × N pairs of punched holes in the thin film sacrificial layer so that one of each pair of punched holes surrounds the connection terminal; A step of continuously depositing an elastic layer and a thin film-type second layer on the thin film sacrificial layer including the pore; A step of cutting the thin film type second layer into an array of M × N thin film type second electrodes which are electrically separated from each other; Forming a multi-layered structure by successively depositing a thin film-type strained layer and a first thin film layer on the array of the M x N thin film type second electrodes; The multilayer structure is patterned into an array of M × N optical path adjusting device structures until the thin film sacrifice layer is exposed so that each optical path adjusting device structure has an etching hole penetrating the protruding portion and each optical path adjusting device at the other end, Wherein the optical path adjusting device structure comprises a thin film type first electrode, a thin film type deforming portion, a thin film type second electrode and an elastic portion, wherein the thin film type first electrode is divided into a driving portion and a light reflecting portion by a horizontal stripe, The driving part being grounded; Forming an array of M x N holes through which each hole passes from the top of the thin film deforming portion to the top of the associated connecting terminal; Forming an array of MxN incomplete optical path adjusting devices to form plugs by filling the holes with metal; Semi-dicing the driving substrate by forming a gap with a predetermined depth on the driving substrate; Completely covering each of the incomplete optical path adjusting devices with a thin film protective layer; Removing the thin film sacrificial layer by injecting an etchant or a chemical solvent through a gap between the etching hole of each incomplete optical path adjusting device and the incomplete optical path adjusting device; Removing the thin film protective layer; And completely cutting the driving substrate into a desired shape to complete an array of M x N thin film type optical path adjusting devices.

Hereinafter, the objects of the present invention will be described with reference to the accompanying drawings.

FIGS. 3A to 3D and FIGS. 4A to 4D are cross-sectional views illustrating an array 300 of M × N thin-film-type optical path adjustment apparatuses 301 for a projection type image display apparatus according to the present invention, Sectional view for explaining a method of manufacturing the array 300 of the thin film optical path adjusting apparatus 301 and a top view of the thin film layers constituting each thin film type optical path adjusting apparatus 301. [ In the above, M and N are integers, and the same parts shown in FIG. 2, FIGS. 3 a to 3 n and FIGS. 4 a to 4 d are represented by the same reference numerals.

FIG. 2 is a cross-sectional view illustrating an array 300 of M × N thin film type optical path adjustment apparatuses 301 according to the present invention. The array 300 includes a driving substrate 210, an inactive layer 220, An etch stop layer 230, and an array of M x N drive structures 200.

The driving structure includes a substrate 212, an array of M x N transistors (not shown), and an array of M x N connecting terminals 214, each of which is connected in an array of transistors And is electrically connected to the transistor.

The passivation layer 220 is made of PSG or silicon nitride with a thickness of 0.1-2 탆 and is located on the upper portion of the driving substrate 210.

The etch stop layer 230 is made of silicon nitride with a thickness of 0.1-2 탆 and is located on top of the inactive layer 220.

Each of the driving structures 200 includes one end and the other end, and has a projection (not shown) and a through hole (not shown) at the other end.

Each of the driving structures 200 includes a thin film type first electrode 285, a thin film type deformation portion 275, a thin film type second electrode 265, an elastic portion 255 and a plug 295. The thin-film first electrode 285 is made of a material having good electrical properties such as aluminum (Al) or silver (Ag) and reflects light. The thin-film first electrode 285 is positioned above the thin- A portion 190 and a light reflection portion 195, which are electrically separated. The driving portion 190 of the thin-film-type first electrode 285 is grounded to function as a common bias electrode and a mirror. The light reflection portion 195 of the thin-film-type first electrode 285 functions as a mirror. The thin film type deforming part 275 is made of a piezoelectric material such as PZT or an electrostriction material such as PMN and is located on the upper part of the thin film type second electrode 265. The thin film second electrode 265 is made of a material having good electrical properties such as Pt / Ta and is formed on the elastic portion 255 and is electrically connected to the relevant transistor through the plug 295 and the connection terminal 214 Type second electrode 265 of the adjacent thin film type optical path adjusting devices 301 to function as a signal electrode in each thin film type optical path adjusting device 301. [ The elastic portion 255 is made of nitride and is located below the thin-film second electrode 265. A bottom portion of one end of the elastic portion 255 is attached to the upper portion of the driving substrate 210 through the etching preventing layer 230 and the inactive layer 220 to support the driving structures 200. The plug 295 is made of a metal such as tungsten and is formed from the upper portion of the thin film deforming portion 275 to the upper portion of the related connection terminal 214 to electrically connect the thin film second electrode 265 to the connection terminal 214 . The plug 295 formed downward from the upper portion of the thin film deforming portion 275 and the thin film type first electrode 285 located above the thin film deforming portion 275 of each thin film type optical path adjusting device 301 are electrically connected .

3a to 3n are schematic cross-sectional views illustrating a method of manufacturing the array 300 of M × N thin-film-type optical path adjustment apparatuses 301 shown in FIG.

The process for fabricating array 300 includes a substrate 212, an array of M x N transistors (not shown), and an array of M x N connecting terminals 214, as shown in FIG. The driving substrate 210 of the first embodiment shown in FIG. The substrate 212 is an insulating material made of a silicon wafer or the like, and each connection terminal 214 is electrically connected to a related transistor among the array of transistors.

As a next step, an inert layer 220 made of PSG, silicon nitride or the like and having a thickness of 0.1 - 2 mu m is formed on the driving substrate (not shown) by chemical vapor deposition or spin coating, 210).

Next, an etch stop layer 230 made of silicon nitride and having a thickness of 0.1 - 2 mu m is formed on top of the passivation layer 220, as shown in FIG. 3C, using sputtering or chemical vapor deposition .

Subsequently, as shown in FIG. 3D, a thin film sacrifice layer 240 is formed on top of the etch stop layer 230. When the thin film sacrificial layer 240 is formed of a metal, a sputtering method or a deposition method may be used. When the thin film sacrificial layer 240 is formed of PSG, spin coating or chemical vapor deposition (CVD) Is formed using a chemical vapor deposition (CVD) method. The thin film sacrificial layer 240 has an upper surface.

Next, the upper surface of the thin film sacrificial layer 240 is planarized by a scrubbing method after a spin on glass (SOG) method or a CMP (chemical mechanical polishing) method, as shown in FIG. 3e.

Next, an array of M × N pairs of empty holes 245 is formed in the thin film sacrificial layer 240, as shown in FIG. 3f, using a dry or wet etching method, 245 are formed so as to surround the connection terminals.

As a subsequent step, an elastic layer 250 made of a nitride such as silicon nitride and having a thickness of 0.1 - 2 mu m is formed by a chemical vapor deposition method, as shown in Fig. 3G, Is deposited on top of the sacrificial layer 240. The stress inside the elastic layer 250 during the deposition is controlled by varying the gas ratio with time.

Subsequently, a thin film-type second layer (not shown) made of a material having good electrical properties such as Pt / Ta and having a thickness of 0.1 - 2 mu m is formed on the upper portion of the elastic layer 250 by sputtering or vacuum deposition . The second thin film type layer is then cut into an array of M.times.N thin film type second electrodes 265 using a dry etching method. Each of the thin film type second electrodes 265 is formed as shown in FIG. 3h And is electrically separated from the neighboring thin film second electrode 265 as shown.

Next, a thin film-type strained layer 270 made of a piezoelectric material such as PZT or an electrostrictive material such as PMN and having a thickness of 0.1 - 2 mu m is formed on the surface of the thin film-like strained layer 270 by vapor deposition, sol-gel, sputtering or chemical Film type second electrodes 265 by using the vapor deposition method. The thin film type strained layer 270 is then thermally treated to cause phase transition using a heat treatment such as a rapid thermal annealing (RTA) method.

Since the thin film type strained layer 270 is sufficiently thin, if the strained layer 270 is made of a piezoelectric material, it can be polarized by an electric signal applied when driving the thin film type optical path adjusting device 301, There is no.

Subsequently, the first thin film layer 280 made of a material having good electrical characteristics such as aluminum (Al) or silver (Ag) and reflecting light and having a thickness of 0.1-2 탆 is formed into a thin film Is formed on top of the strained layer 270 to form a multi-layer structure 350, as shown in Figure 3j.

Next, as shown in FIG. 3k, the multi-layer structure 350 is patterned using a photolithography method or a laser cutting method until the thin film sacrificial layer 240 is exposed, 345, each of which has a protrusion (not shown) and a through-hole (not shown) at the other end thereof. Each of the optical path adjusting device structures 345 includes a thin film first electrode 285, a thin film deforming portion 275, a thin film second electrode 265 and an elastic portion 255. The thin film type first electrode 285 is divided into a driving portion 190 and a light reflecting portion 195 by a horizontal stripe 287 and electrically separated from each other and the driving portion 190 Are grounded.

As a successive step, an array of MxN holes 290 is formed using an etching method, wherein each of the holes 290 extends from the top of the thin film shaped deformations 275, as shown in FIG. Terminal 214 is formed.

In the next step, the plug 295 is formed by filling the hole 290 with a metal such as tungsten using a lift-off method or the like, so that M x Thereby forming an array 330 of N unfinished optical path adjusters 335.

After this step, a gap (not shown) having a depth of a third of the thickness of the driving substrate 210 is formed using a dicing method. This process is known as semi-dicing.

Subsequently, each of the incomplete optical path adjusting devices 335 is completely surrounded by a thin film protective layer (not shown).

The thin film-type sacrificial layer 240 is subsequently removed using a wet etching method using an etching solution such as a hydrofluoric acid vapor or a chemical solvent. The etching solution or the chemical solvent is introduced into the etching hole of each incomplete optical path adjusting device 335 And is injected through a gap between the incomplete optical path adjusting devices 335 to form a driving space for each thin film type optical path adjusting device 301. [

Next, the thin film protective layer is removed.

Finally, the driving substrate 210 is completely cut into a desired shape using a dicing method or a laser cutting method, and as shown in FIG. 3n, the M × N thin- Thereby completing the array 300 of FIG.

4a to 4d show the thin film type first electrode 285, the thin film type deforming portion 275, the thin film type second electrode 265 and the elastic portion 255 constituting each thin film type optical path adjusting device 301 according to the present invention, Respectively. Each of the thin film layers has a projection 205 and an etching hole 289 at the other end. As shown in FIG. 4c, the thin film second electrode 265 is electrically separated from the thin film second electrode 265 of another thin film type optical path adjustment device 301 neighboring the array 300.

Although the thin film type optical path adjusting device 301 and the manufacturing method thereof are described in the case where each thin film type optical path adjusting device has a unimorph structure, the apparatus and method described above can be applied to a case where each thin film type optical path adjusting device is a bimorph ) Structure, that is, including an additional strain layer and an electrode layer and the formation thereof.

While the present invention has been particularly shown and described with reference to preferred embodiments thereof, it will be understood by those skilled in the art that various changes and modifications may be made therein without departing from the spirit and scope of the invention.

Claims (17)

A drive substrate including an array of M x N connection terminals, each of which has a connection terminal electrically connected to the associated transistor, an array of M x N transistors, and a substrate; An inert layer formed on an upper portion of the driving substrate; An etch stop layer formed on top of the passivation layer; Each drive structure has one end and the other end, and each drive structure has a protruding portion and an etching hole penetrating the drive structure at the other end. Each drive structure includes a thin film type first electrode, a thin film type deformation portion, Wherein the thin film type first electrode is located at the top of the thin film type deformation portion and divided into a driving portion and a light reflection portion by a horizontal stripe to be electrically separated from each other, Wherein the driving portion of the first electrode is grounded so that the driving portion functions as a bias electrode and a mirror and the light reflecting portion functions as a mirror respectively and the thin film deforming portion is positioned on the upper portion of the thin film second electrode, And is electrically connected to the associated transistor through a plug and connection terminal, And the elastic portion is positioned at the lower portion of the thin film type second electrode and the bottom portion of one end of the elastic portion functions as the etching prevention layer and the inactive portion of the thin film type second electrode, Layer type deformable portion to the upper portion of the associated connection terminal to electrically connect the thin-film-type second electrode to the connection terminal, and the M × An array of M x N thin film type optical path adjustment devices for a projection type image display device comprising an array of N drive structures. The array of M x N thin-film type optical path adjustment devices according to claim 1, wherein the inactive layer is formed of PSG or silicon nitride. The array of M x N thin-film type optical path adjustment devices according to claim 1, wherein said etch stop layer is formed of silicon nitride. Preparing a drive substrate including an array of M x N connection terminals, each of which has a connection terminal electrically connected to the associated transistor, an array of M x N transistors, and a substrate; Depositing an inert layer on top of the driving substrate; Depositing an etch stop layer over the inactive layer; Depositing a thin film sacrificial layer having an upper surface on top of the etch stop layer; A step of flattening the upper surface of the thin film sacrificial layer; Forming an array of M × N pairs of punched holes in the thin film sacrificial layer so that one of each pair of punched holes surrounds the connection terminal; A step of continuously depositing an elastic layer and a thin film-type second layer on the thin film sacrificial layer including the pore; A step of cutting the thin film type second layer into an array of M × N thin film type second electrodes which are electrically separated from each other; Forming a multi-layered structure by successively depositing a thin film-type strained layer and a first thin film layer on the array of the M x N thin film type second electrodes; The multilayer structure is patterned into an array of M × N optical path adjusting device structures until the thin film sacrifice layer is exposed so that each optical path adjusting device structure has an etching hole penetrating the protruding portion and each optical path adjusting device at the other end, Wherein the optical path adjusting device structure comprises a thin film type first electrode, a thin film type deforming portion, a thin film type second electrode and an elastic portion, wherein the thin film type first electrode is divided into a driving portion and a light reflecting portion by a horizontal stripe, The driving part being grounded; Forming an array of M x N holes through which each hole passes from the top of the thin film deforming portion to the top of the associated connecting terminal; Forming an array of MxN incomplete optical path adjusting devices to form plugs by filling the holes with metal; Semi-dicing the driving substrate by forming a gap with a predetermined depth on the driving substrate; Completely covering each of the incomplete optical path adjusting devices with a thin film protective layer; Removing the thin film sacrificial layer by injecting an etching solution or a chemical solvent through a gap between the etching hole of each incomplete optical path adjusting device and the incomplete optical path adjusting device; Removing the thin film protective layer; And a step of completely cutting the driving substrate into a desired shape to complete an array of M × N thin film type optical path adjusting devices, wherein each thin film type optical path adjusting device comprises M × N A method of manufacturing an array of thin film optical path adjustment devices. 5. The method according to claim 4, wherein the inactive layer is formed of PSG or silicon nitride. The method of claim 5, wherein the inactive layer is formed to a thickness of 0.1 - 2 탆. 7. The method according to claim 6, wherein the inactive layer is formed using a chemical vapor deposition method or a spin coating method. The method of manufacturing an array of M x N thin film type optical path adjustment apparatuses according to claim 4, wherein said etch stop layer is formed of silicon nitride. The method for manufacturing an array of M × N thin film type optical path adjusting apparatuses according to claim 8, wherein said etch stop layer is formed to a thickness of 0.1 to 2 μm. The method according to claim 9, wherein the etch stop layer is formed by sputtering or a chemical vapor deposition method. 5. The method of claim 4, wherein the upper surface of the thin film sacrificial layer is planarized using a SOG method, a CMP method, and a scrubbing method. 5. The method according to claim 4, wherein the array of pore holes is formed using a dry or wet etching method. The method for manufacturing an array of M × N thin film type optical path adjusting apparatuses according to claim 4, wherein said thin film-type second layer is cut using a dry etching method. 5. The method according to claim 4, wherein the thin film type strained layer is heat-treated using an RTA method. The method of manufacturing an array of M × N thin-film type optical path adjusting apparatuses according to claim 4, wherein a gap of a predetermined depth of the drive substrate is formed to a third of the depth of the drive substrate. The method of manufacturing an array of M × N thin-film type optical path adjusting apparatuses according to claim 4, wherein the predetermined depth gap is formed by using a dicing method. 5. The method according to claim 4, wherein the driving substrate is completely diced by using a dicing or laser cutting method.