KR100204914B1 - Signal pick-up device for solid-state image sensor - Google Patents
Signal pick-up device for solid-state image sensor Download PDFInfo
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- KR100204914B1 KR100204914B1 KR1019960011180A KR19960011180A KR100204914B1 KR 100204914 B1 KR100204914 B1 KR 100204914B1 KR 1019960011180 A KR1019960011180 A KR 1019960011180A KR 19960011180 A KR19960011180 A KR 19960011180A KR 100204914 B1 KR100204914 B1 KR 100204914B1
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Abstract
본 발명은 고체촬상소자의 신호검출장치에 관한 것으로 특히, 암전류의 발생이 적고 감도가 향상된 고체촬상소자의 신호검출장치에 관한 것이다. 이를 위하여 발명은 소정의 전송클럭에 의하여 전송된 전송전하의 신호를 검출하는 고체촬상소자의 신호검출장치에 있어서, 제1도전형의 반도체기판과, 상기 반도체기판 상부에 형성되는 제2도전형의 전하전송영역과, 상기 전하전송영역 상부에 절연막을 개재하여 간격을 두고 형성된 제1, 제2게이트와, 상기 제1, 제2게이트 사이의 상기 전하전송영역 내부의 일부분에 위치하되, 상기 전하전송영역보다 농도가 높은 제2도전형의 전하응집영역과, 상기 제1, 제2게이트 사이의 상기 전하전송영역의 상단에 형성된 고농도의 제1도전형 도핑영역을 구비하여 이루어진다.The present invention relates to a signal detection device of a solid state image pickup device, and more particularly, to a signal detection device of a solid state image pickup device with low generation of dark current and improved sensitivity. To this end, the present invention provides a signal detecting device of a solid state image pickup device that detects a signal of transmission charge transmitted by a predetermined transmission clock, the semiconductor substrate of a first conductive type and a second conductive type formed on an upper portion of the semiconductor substrate. A charge transfer region and a first and second gates spaced apart from each other by an insulating layer on the charge transfer region, and a portion of an inside of the charge transfer region between the first and second gates; And a second conductive type charge aggregation region having a higher concentration than that of the region, and a high concentration first conductive type doping region formed on an upper end of the charge transfer region between the first and second gates.
Description
제1도는 종래의 고체촬상소자의 신호검출장치를 설명하기 위한 도면.1 is a diagram for explaining a signal detection apparatus of a conventional solid state image pickup device.
제2도는 본 발명에 따른 고체촬상소자의 신호검출장치를 설명하기 위한 도면.2 is a view for explaining a signal detection device of a solid state image pickup device according to the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
10, 20 : 반도체기판 11, 21 : P웰10, 20: semiconductor substrate 11, 21: P well
12, 22 : BCCD 12a, 22a : 플로팅 확산영역12, 22: BCCD 12a, 22a: floating diffusion region
13, 23 : 절연막 14, 24 : 출력게이트13, 23 insulating film 14, 24 output gate
15, 25 : 리센게이트 16, 26 : 콘택영역15, 25: Sensitive gate 16, 26: contact area
17, 27 : 전하증폭부 28 : P+ 도핑층17, 27: charge amplifier 28: P + doping layer
본 발명은 고체촬상소자의 신호검출장치에 관한 것으로 특히, 암전류의 발생이 적고 감도가 향상된 고체촬상소자의 신호검출장치에 관한 것이다.The present invention relates to a signal detection device of a solid state image pickup device, and more particularly, to a signal detection device of a solid state image pickup device with low generation of dark current and improved sensitivity.
고체촬상소자는 빛에 의해 전자를 발생시키고, 전하결합소자(Charge Coupled Device : 이하 CCD라 칭한다.)를 방향성을 가지도록 배열하고, 이에 의해 전송된 신호전하를 검출하는 장치이다. 즉, 빛에 의하여 여기된 전하들을 방향성을 가지는 CCD 어레이(array)를 통하여 전송한 다음, 이 신호를 증폭하여 소정의 출력신호를 얻는 장치이다.A solid state image pickup device generates electrons by light, arranges charge coupled devices (hereinafter referred to as CCDs) in a directional manner, and detects the signal charges transferred thereby. In other words, it is a device that transfers charges excited by light through a directional CCD array and then amplifies this signal to obtain a predetermined output signal.
영상신호를 전기신호로 변환시켜주는 장치인 고체촬상소자는 빛을 흡수하여 전자를 생성하는 광전변화부와, 광전변화부에서 발생된 전하를 다이나믹한 포텐셜 웰의 움직임에 의해 소정지역에 운송하는 전하전송부와, 운송된 전하로부터 신호를 검출하는 신호검출부로 이루어진다.The solid-state image pickup device, a device for converting an image signal into an electrical signal, includes a photoelectric changer that absorbs light to generate electrons, and a charge that transfers charges generated by the photoelectric changer to a predetermined region by a dynamic potential well. It consists of a transmission part and a signal detection part which detects a signal from the conveyed electric charge.
제1도는 종래의 고체촬상소자의 신호검출장치를 설명하기 위한 도면으로, 신호검출장치의 개략적인 단면구조를 나타낸 것이다.1 is a view for explaining a signal detection apparatus of a conventional solid state image pickup device, and shows a schematic cross-sectional structure of the signal detection apparatus.
도시된 바와 같이, 기판(10)상의 P웰(11)내에 전하가 전송되는 N형층영역인 BCCD(12)가 형성되어 있다. 따라서 상기 P웰(11)과 전하전송영역이 되는 BCCD(12)는 PN 접합되어 있다. BCCD(12) 상단에는 절연막(13)이 개재된채 출력게이트(14)와 리 센게이트(15)가 일정간격을 두고 형성되어 있다.As shown, BCCD 12, which is an N-type layer region in which charge is transferred, is formed in the P well 11 on the substrate 10. As shown in FIG. Accordingly, the P well 11 and the BCCD 12 serving as the charge transfer region are PN junctions. The output gate 14 and the sensing gate 15 are formed at a predetermined interval on the BCCD 12 with the insulating film 13 interposed therebetween.
출력게이트(14)와 리센게이트(15) 사이의 BCCD(12) 부분 즉, 도면에 점선으로 정의된 영역은 특히 플로팅 확산영역(12a)으로 정의될 수 있다. (이하 BCCD(12) 중에서 출력게이트와 리센게이트 사이부분을 플로팅 확산영역일 칭한다.) 플로팅 확산영역(12a)은 전송전하를 받아들여서 감지증폭부(17)로 보내는 출력단이 된다. 이때 플로팅 확산영역(12a)내에 고농도의 N형 불순물로 감지폭부(17)와 전기적으로 연결되는 부분인 콘택영역(16)을 형성한다. 이는 플로팅 확산영역(12a)에 운송된 전송전하를 감지증폭부(17)가 쉽게 센싱할 수 있도록 콘택영역(16)의 전도성을 높히기 위해서이다. 이곳으로부터 추출된 신호가 감지증폭부(17)에서 최종적인 출력 VOUT가 된다.The portion of the BCCD 12 between the output gate 14 and the sensitizer 15, ie the region defined by the dashed lines in the figure, may in particular be defined as the floating diffusion region 12a. (Hereinafter, a portion of the BCCD 12 between the output gate and the recess gate is referred to as a floating diffusion region.) The floating diffusion region 12a is an output terminal that receives transfer charges and sends them to the sense amplifier 17. At this time, a contact region 16 is formed in the floating diffusion region 12a, which is a portion electrically connected to the sensing width 17 with a high concentration of N-type impurities. This is to increase the conductivity of the contact region 16 so that the sense amplifier 17 can easily sense the transfer charges transported in the floating diffusion region 12a. The signal extracted from this becomes the final output V OUT at the sense amplifier 17.
상기와 같이 구성된 고체촬상소자의 신호검출장치의 작동을 설명하면 다음과 같다.Referring to the operation of the signal detection device of the solid state image pickup device configured as described above are as follows.
먼저 HCCD를 통하여 일방향으로 전송된 전하는 전송클럭에 의해 출력게이트(14)를 지나 플로팅 확산영역(12a)에 들어온다. 플로팅 확산영역(12a)에 들어온 전송전하는 도전성이 큰 콘택영역(16)에서 전기적으로 연결된 감지증폭부(17)를 통하여 출력전압 VOUT이 센싱된다. 센싱이 끝나면 리센게이트(15)에 인가된 리센펄스에 의해 플로팅 확산영역(12a)과 리센트 드레인(도면에 표시되어 있지 않음) 사이에 형성된 채널을 통과하여 센싱이 끝난 전송전하가 방전된다.First, charges transmitted in one direction through the HCCD enter the floating diffusion region 12a through the output gate 14 by the transmission clock. The transmission charge entering the floating diffusion region 12a is sensed by the output voltage V OUT through the sense amplifier 17 electrically connected to the highly conductive contact region 16. After the sensing is completed, the transferred charge is discharged by passing through the channel formed between the floating diffusion region 12a and the recess drain (not shown) by the sensation pulse applied to the recess gate 15.
그러나 상기와 같이 구성된 신호출력 장치는 HCCD를 걸쳐서 플로팅 확산영역으로 넘어온 전자들이 플로팅 확산영역의 상단에서 자연발생되는 호울과 결합하는 경우가 생겨서 전하감도가 낮아지는 경향이 있었다. 또한, 기판 표면에서 발생하는 노이즈가 기판내로 들어가서 암전류를 일으켰다.However, the signal output device configured as described above tends to have low charge sensitivity due to the occurrence of electrons that have crossed the HCCD into the floating diffusion region and combine with a naturally occurring hole at the top of the floating diffusion region. In addition, noise generated on the surface of the substrate enters the substrate, causing a dark current.
본 발명은 이와 같은 문제점을 해결하기 위하여 안출된 것으로 암전류를 감소시키고, 전하감도가 향상된 신호검출장치를 가지는 고체촬상소자를 제공하는데 그 목적이 있다.An object of the present invention is to provide a solid state image pickup device having a signal detection device that reduces dark current and improves charge sensitivity.
상기 목적을 달성하기 위하여, 본 발명은 고체촬상소자의 신호검출장치에 있어서, 제1도전형의 웰과, 상기 웰 상부에 형성되는 제2도전형의 전하전송영역과, 상기 전하전송영역 상부에 절연막을 개재하여 소정의 간격을 두고 형성된 제1, 제2게이트와, 상기 전하전송영역 내부에 형성되되, 상기 제1, 제2게이트 사이에 위치하고, 상기 전하전송영역보다 농도가 높은 제2도전형의 전하응집영역과, 상기 제1, 제2게이트 사이의 상기 전하전송영역의 상단에 형성되어 상기 전하전송영역과 이종접합을 이루는 고농도의 제1도전형 도핑영역을 구비하여 이루어진 고체촬상소자의 신호검출장치를 제공한다.In order to achieve the above object, the present invention provides a signal detecting device for a solid state image pickup device, comprising: a well of a first conductivity type, a charge transfer region of a second conductivity type formed on an upper portion of the well, and an upper portion of the charge transfer region. First and second gates formed at predetermined intervals through the insulating film and in the charge transfer region, and are formed between the first and second gates, and have a higher concentration than the charge transfer region. And a high concentration first conductive doping region formed on top of the charge transfer region between the first and second gates to form a heterojunction with the charge transfer region. It provides a detection device.
이하 첨부된 도면을 참조로 본 발명을 설명하면 다음과 같다.Hereinafter, the present invention will be described with reference to the accompanying drawings.
제2도는 본 발명에 따른 고체촬상소자의 신호검출장치의 개략적인 단면구조를 나타낸 것이다.2 shows a schematic cross-sectional structure of the signal detection device of the solid state image pickup device according to the present invention.
기판(20)상의 P웰(21)내에 N형층 전하전송영역인 BCCD(22)가 형성되어 있다. 따라서 상기 P웰(21)과 전하전송영역이 되는 BCCD(22)는 PN 접합되어 있다. BCCD(22)상부에는 절연막(23)이 개재된채 출력게이트(24)와 리센게이트(25)가 일정간격을 두고 형성되어 있다. BCCD(22)내의 출력게이트(24)와 리센게이트(25) 사이부분에는 플로팅 확산영역(22a)이 정의되어 있다. 플로팅 확산영역(22a)내에는 감지증폭부(27)에 전기적으로 연결되어 있는 고농도의 N형 불순물로 형성된 콘택영역(26)이 있다.BCCD 22, which is an N-type layer charge transfer region, is formed in the P well 21 on the substrate 20. As shown in FIG. Accordingly, the P well 21 and the BCCD 22 serving as the charge transfer region are PN junctions. On the BCCD 22, the output gate 24 and the recess gate 25 are formed with a predetermined interval with the insulating film 23 interposed therebetween. A floating diffusion region 22a is defined at the portion between the output gate 24 and the recess gate 25 in the BCCD 22. In the floating diffusion region 22a, there is a contact region 26 formed of a high concentration of N-type impurities electrically connected to the sensing amplifier 27.
그리고 N형 플로팅 확산영역(22a)의 상단에는 P+형의 불순물로 도핑된 P+도핑영역(28)이 형성되어 있다. 따라서 플로팅 확산영역(22a)의 상부는 비공핍화되어 있다. 즉, 플로팅 확산영역(22a)의 표면을 미리 호올로 채워 그 경계면을 비공핍화시킴으로써 노이즈 전하들이 내부로 들어오는 것을 방지하는 기능을 한다.A P + doped region 28 doped with an impurity of P + type is formed at an upper end of the N-type floating diffusion region 22a. Therefore, the upper portion of the floating diffusion region 22a is depleted. That is, the surface of the floating diffusion region 22a is filled with a hole in advance to deplete its interface to prevent noise charges from entering.
상기와 같이 구성되는 본 발명의 작동을 설명하면 다음과 같다.Referring to the operation of the present invention configured as described above are as follows.
먼저 HCCD를 통하여 일방향으로 전송된 전하는 전송클럭에 의해 출력게이트(24)를 지나 플로팅 확산영역(22a)에 들어온다. 이때 N형 플로팅 확산영역(22a)의 상단은 P+도핑영역(28)이 형성되어 있기 때문에 비공핍화되어 있다. 따라서 외부의 노이즈들이 플로팅 확산영역(22a) 내부로 침투하기가 용이하지 않으며, 플로팅 확산영역(22a)내의 전송전하들이 호올과 결합하기 어렵다. 따라서 전송전하들이 안전하게 플로팅 확산영역(22a)내에 들어오게 된다.First, charges transmitted in one direction through the HCCD enter the floating diffusion region 22a through the output gate 24 by the transmission clock. At this time, the upper end of the N-type floating diffusion region 22a is depleted because the P + doped region 28 is formed. Therefore, it is not easy for external noises to penetrate into the floating diffusion region 22a, and the transfer charges in the floating diffusion region 22a are difficult to combine with the hool. Therefore, the transfer charges safely enter the floating diffusion region 22a.
플로팅 확산영역(22a)에 들어온 전송전하는 도전성이 큰 콘택영역(26)에서 전기적으로 연결된 감지증폭부(17)를 통하여 출력전압 VOUT이 센싱된다. 이때 N+형의 콘택영역(26)의 상단도 P+형의 불순물로 도핑하여 공핍영역을 형성하면, 콘택영역내의 전송전하가 외부 노이즈의 방해없이 감지증폭부에 의해 안전하게 센싱될 수 있다. 센싱이 끝나면 리센게이트(25)에 인가된 리센펄스에 의해 플로팅 확산영역(22a)과 리센트 드레인(도면에 표시되어 있지 않음) 사이에 형성된 채널을 통과하여 센싱이 끝난 전송전하가 방전된다.The transmission charge entering the floating diffusion region 22a is sensed by the output voltage V OUT through the sense amplifier 17 electrically connected to the highly conductive contact region 26. In this case, if the upper end of the N + type contact region 26 is also doped with P + type impurities to form a depletion region, the transfer charges in the contact region can be safely sensed by the sensing amplifier without disturbing external noise. After the sensing is completed, the transferred charges are discharged by passing through the channel formed between the floating diffusion region 22a and the recess drain (not shown) by the sense pulse applied to the recess gate 25.
상술한 바와 같이 본 발명은 플로팅 확산영역을 비공핍화시킴으로써 외부노이즈들이 내부로 들어오는 것을 감소시킬 수 있으며, 전송전하들이 플로팅 확산영역내에 발생된 호울과 결합하는 것을 막을 수 있다. 따라서 암전류의 발생을 감소시키고 전송전하만을 안정적으로 출력할 수 있다.As described above, the present invention can reduce the inflow of external noises by depleting the floating diffusion region, and prevent the transfer charges from coupling with the hole generated in the floating diffusion region. Therefore, it is possible to reduce the generation of dark current and to stably output only transmission charges.
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| KR100399938B1 (en) * | 2001-11-19 | 2003-09-29 | 주식회사 하이닉스반도체 | Image sensor for measuring the dark signal |
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