KR100199279B1 - Power semiconductor module - Google Patents
Power semiconductor module Download PDFInfo
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- KR100199279B1 KR100199279B1 KR1019960063292A KR19960063292A KR100199279B1 KR 100199279 B1 KR100199279 B1 KR 100199279B1 KR 1019960063292 A KR1019960063292 A KR 1019960063292A KR 19960063292 A KR19960063292 A KR 19960063292A KR 100199279 B1 KR100199279 B1 KR 100199279B1
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- South Korea
- Prior art keywords
- power semiconductor
- semiconductor module
- electrode terminals
- metal pattern
- support member
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 29
- 239000002184 metal Substances 0.000 claims abstract description 28
- 229910052751 metal Inorganic materials 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 230000005484 gravity Effects 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 238000003780 insertion Methods 0.000 description 8
- 230000037431 insertion Effects 0.000 description 8
- 238000005476 soldering Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000000465 moulding Methods 0.000 description 4
- DEVSOMFAQLZNKR-RJRFIUFISA-N (z)-3-[3-[3,5-bis(trifluoromethyl)phenyl]-1,2,4-triazol-1-yl]-n'-pyrazin-2-ylprop-2-enehydrazide Chemical compound FC(F)(F)C1=CC(C(F)(F)F)=CC(C2=NN(\C=C/C(=O)NNC=3N=CC=NC=3)C=N2)=C1 DEVSOMFAQLZNKR-RJRFIUFISA-N 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0652—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next and on each other, i.e. mixed assemblies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5386—Geometry or layout of the interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Geometry (AREA)
- Inverter Devices (AREA)
Abstract
본 발명은 인버터, 컨버터, 무정전전원장치 등에 사용되고, 모터컨트롤용, 스위칭용, 파워써플라이용 등으로 응용되는 전력용 반도체 모듈에 관한 것으로서, 금속패턴이 표면상에 형성된 기판; 상기 기판상에 마운팅되어 상기 금속패턴과 전기적으로 연결된 적어도 하나 이상의 전력용 반도체 소자; 상기 금속패턴을 외부와 연결하기 위하여 상기 금속패턴에 전기적으로 연결되는 적어도 3개 이상의 단자들; 및 상기 적어도 3개 이상의 단자들이 삽입되어 무게중심을 이루어 별도의 외부 지지구 없이 상기 기판상에 직립될 수 있도록 지지하기 위한 지지부재를 구비하는 것을 특징으로 한다.The present invention relates to a power semiconductor module used in an inverter, a converter, an uninterruptible power supply, and the like, which is applied for motor control, switching, power supply, etc., comprising: a substrate having a metal pattern formed on its surface; At least one power semiconductor device mounted on the substrate and electrically connected to the metal pattern; At least three terminals electrically connected to the metal pattern to connect the metal pattern to the outside; And a support member for supporting the at least three terminals so that the at least three terminals are inserted to stand up on the substrate without a separate external support by forming a center of gravity.
Description
본 발명은 인버터, 컨버터, 무정전전원장치 등에 사용되고, 모터컨트롤용, 스위칭용, 파워써플라이용 등으로 응용되는 전력용 반도체 모듈에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to power semiconductor modules used in inverters, converters, uninterruptible power supplies, and the like for motor control, switching, power supplies, and the like.
IGBT, 파워모스펫, 또는 바이폴라트랜지스터등으로 이루어진 전력용 반도체 모듈을 제작하는 데 있어서 각 재료의 접합 공정을 살펴 보면, 트랜지스터 소자와 다이오드 소자를 DBC(direct bonded copper) 기판에 접합하고 와이어로 연결하며, 외부로 연결되는 주 전극 단자 및 보조 전극 단자를 상기 기판에 접합하게 된다. 이렇게 연결하고 접합하는 방법과 각 전극 단자의 형상 및 DBC(direct bonded copper) 기판의 패턴은 각 제조 업체 별로 상이하다. 즉 전력용 반도체 모듈의 회로 연결 방식에 따라서 DBC(direct bonded copper) 기판의 회로 패턴이 달라지고, 이에 의하여 같은 주 전극 단자라도 그 형상이 서로 달라질 수 있다. 보조 전극 단자와 DBC(direct bonded copper) 기판을 와이어를 이용하여 연결하는 방식에 있어서는, 주 전극 단자의 형상을 여유있게 변화시킬 수 있는 반면, 와이어 연결 고리를 필요로 하여 추가의 금형이 요구되는 단점이 있다.In the process of bonding each material in manufacturing a power semiconductor module composed of IGBTs, power MOSFETs, or bipolar transistors, the transistor and diode devices are bonded to a DBC (direct bonded copper) substrate and connected by wire. A main electrode terminal and an auxiliary electrode terminal connected to the outside are bonded to the substrate. The method of connecting and bonding in this way, the shape of each electrode terminal, and the pattern of the direct bonded copper (DBC) substrate are different for each manufacturer. That is, the circuit pattern of the direct bonded copper (DBC) substrate varies according to the circuit connection method of the power semiconductor module, whereby the shape of the same main electrode terminal may be different. In the method of connecting the auxiliary electrode terminal and the DBC (direct bonded copper) substrate by using a wire, the shape of the main electrode terminal can be changed in a relaxed manner, but the additional mold is required by requiring a wire connecting ring. There is this.
전력용 반도체 모듈을 제작함에 있어서, 전극 단자를 기판상에 직립시키기 위해 일반적으로 외부 지지구을 사용한다. 이는 전극 단자를 퍼니스를 이용하여 솔더링(soldering)할 때 조립된 형태를 그대로 유지하기 위함이다. 다른 방법으로서, 고내열 재료로 제조된 지지부재에 전극 단자를 끼워서 직립시키는 방법이 있으나, 지지부재만으로는 무게 중심이 맞지 않아 안정하게 직립시킬 수 없기 때문에 별도의 외부 지지구를 필요로 하게 된다.In manufacturing a power semiconductor module, an external support is generally used to erect electrode terminals on a substrate. This is to maintain the assembled form when soldering the electrode terminal using the furnace (soldering). As another method, there is a method of inserting an electrode terminal in a support member made of a high heat-resistant material, but there is a method of standing up, but since the support member alone does not fit the center of gravity and cannot stand up stably, a separate external support is required.
본 발명의 목적은 이와 같은 종래 기술의 문제점을 해결하기 위하여, 각 전극단자의 형상을 같게하여 최소의 금형으로 전극단자를 제작함으로써, 금형에 대한 추가 비용을 절약할 수 있게 함과 아울러, 적어도 세 개 이상의 단자들을 무게 중심을 이루도록 지지부재에 삽입하고 그에 대응되게 금속패턴을 설계하여, 별도의 외부 지지구 없이 전극단자들을 기판에 안정하게 직립시킴으로써, 후속의 접합 공정을 용이하고 경제적으로 실시할 수 있게 하는 전력용 반도체 모듈을 제공하는 데 있다.SUMMARY OF THE INVENTION In order to solve the problems of the prior art, the object of the present invention is to make the electrode terminals with the minimum mold by making the shape of each electrode terminal the same, thereby saving additional costs for the mold and at least three By inserting more than one terminal into the support member to form a center of gravity and designing a metal pattern corresponding thereto, the electrode terminals can be stably erected to the substrate without a separate external support, so that subsequent joining processes can be easily and economically performed. It is to provide a power semiconductor module that allows.
상기 목적을 달성하기 위하여, 본 발명은 금속패턴이 표면상에 형성된 기판; 상기 기판상에 마운팅되어 상기 금속패턴과 전기적으로 연결된 적어도 하나 이상의 전력용 반도체 소자; 상기 금속패턴을 외부와 연결하기 위하여 상기 금속패턴에 전기적으로 연결되는 적어도 3개 이상의 단자들; 및 상기 적어도 3개 이상의 단자들이 삽입되어 무게중심을 이루어 별도의 외부 지지구 없이 상기 기판상에 직립될 수 있도록 지지하기 위한 지지부재를 구비하는 것을 특징으로 한다.In order to achieve the above object, the present invention is a substrate with a metal pattern formed on the surface; At least one power semiconductor device mounted on the substrate and electrically connected to the metal pattern; At least three terminals electrically connected to the metal pattern to connect the metal pattern to the outside; And a support member for supporting the at least three terminals so that the at least three terminals are inserted to stand up on the substrate without a separate external support by forming a center of gravity.
도 1 은 본 발명의 일실시예에 의한 주 전극 단자를 나타낸 도면.1 is a view showing a main electrode terminal according to an embodiment of the present invention.
도 2 는 본 발명의 일실시예에 의한 보조 전극 단자를 나타낸 도면.2 is a view showing an auxiliary electrode terminal according to an embodiment of the present invention.
도 3 은 본 발명의 일실시예에 의한 전극 단자가 납땜되는 부위를 나타낸 금속 패턴을 구비한 기판의 평면도.3 is a plan view of a substrate having a metal pattern showing a portion where the electrode terminal is soldered according to an embodiment of the present invention.
도 4 는 본 발명의 일실시예에 의한 지지부재의 사시도.4 is a perspective view of a support member according to an embodiment of the present invention.
도 5 는 도 4 의 정면도.5 is a front view of FIG. 4.
도 6 은 본 발명의 일실시예의 사시도.6 is a perspective view of one embodiment of the present invention.
도 7 은 도 6 의 정면도(지지부재에서 너트 삽입홈과 볼트 삽입홈은 생략함).Figure 7 is a front view of Figure 6 (nut insertion groove and bolt insertion groove is omitted from the support member).
도 8 은 본 발명의 일실시예의 완성품의 사시도.8 is a perspective view of the finished product of one embodiment of the present invention;
도면의 주요 부분에 대한 부호의 설명Explanation of symbols for the main parts of the drawings
10 : 주 전극 단자 11 : 주 전극 단자가 솔더링되는 부위10: main electrode terminal 11: the area where the main electrode terminal is soldered
12 : 단자 연결부 12a : 볼트 삽입구12: terminal connection part 12a: bolt insertion hole
13 : 절곡부 14 : 지지부13: bent portion 14: support portion
14a : 밀착구 14b, 24c : 걸림턱14a: close contact 14b, 24c: locking jaw
16, 26 : 접속부 16a, 26a : 금속패턴과 솔더링되는 부위16, 26: connection part 16a, 26a: the part which is soldered with a metal pattern
20 : 보조 전극 단자 21 : 보조 전극 단자가 솔더링되는 부위20: auxiliary electrode terminal 21: the part where the auxiliary electrode terminal is soldered
24 : 단자부 24a : 외부 연결구24: terminal portion 24a: external connector
30 : 지지부재 31 : 너트 삽입홈30: support member 31: nut insertion groove
32 : 볼트 삽입홈 33 : 주 전극 단자가 삽입되는 통공32: bolt insertion groove 33: hole through which the main electrode terminal is inserted
34 : 보조 전극 단자가 삽입되는 통공34: through hole in which the auxiliary electrode terminal is inserted
40 : 금속 패턴이 표면상에 형성된 기판40: substrate on which the metal pattern is formed on the surface
50 : 방열판 60 : 케이스50: heat sink 60: case
70 : 몰딩 컴파운드 80 : 볼트70: molding compound 80: bolt
이하, 본 발명의 일 실시예를 첨부 도면을 참조하여 상세히 설명하고자 한다.Hereinafter, an embodiment of the present invention will be described in detail with reference to the accompanying drawings.
도 6 및 도 7 에 본 발명의 일 실시예가 도시되어 있다. 주 전극 단자(10)들은 지그재그형을 이루어, 보조 전극 단자(20)들은 일렬로 지지부재(30)에 삽입되어있다. 이에 대응하여 도 3 과 같이 금속패턴상에 주전극단자 납땜부위(11)는 지그재그형으로, 보조전극단자 납땜부위(21)는 일럴로 배치되어있다. 상기 단자들은 기판(40)상의 금속 패턴의 솔더링 부위(11, 21)에 맞춰서 직립되어 있다. 이런 식으로 직립시키게 되면 무게 중심을 이루게 되어 별도의 외부 지지구 없이 안정하게 직립된다. 이 상태에서 상기 솔더링 부위(11, 21)에 솔더가 부가된 후, 그대로 퍼니스로 옮겨져서 솔더링이 이루어진다.6 and 7 an embodiment of the present invention is shown. The main electrode terminals 10 are zigzag-shaped, and the auxiliary electrode terminals 20 are inserted in the support member 30 in a row. Correspondingly, as shown in FIG. 3, the main electrode terminal soldering portion 11 is zigzag-shaped, and the auxiliary electrode terminal soldering portion 21 is arranged on the metal pattern in one piece. The terminals are upright in conformity with the soldering portions 11 and 21 of the metal pattern on the substrate 40. Uprights in this way form a center of gravity and stand up stably without a separate external support. In this state, after solder is added to the soldering portions 11 and 21, the solder is transferred to the furnace as it is.
도 8 에는 본 발명의 일 실시예에 의한 완성품이 도시되어 있다. 솔더링이 이루어진 도 6 의 상태에서 케이스(60)를 끼우고, 액상 실리콘겔을 기판(40), 반도체소자, 및 단자들의 접속부(16,26)가 묻히도록 케이스(60) 내에 붓는다. 실리콘겔의 경화후에 에폭시를 케이스의 상단 높이까지 부가하여 경화시킨다. 그리고 지지부재(30) 상부에 돌출된 주전극단자(10)들을 직각으로 절곡시키고 볼트(80)를 채운다.8 shows a finished product according to one embodiment of the present invention. In the state of FIG. 6 where soldering is performed, the case 60 is inserted, and the liquid silicon gel is poured into the case 60 so that the substrates 40, the semiconductor elements, and the connecting portions 16 and 26 of the terminals are buried. After curing the silicone gel, the epoxy is added to the top height of the case to cure. Then, the main electrode terminals 10 protruding from the upper portion of the supporting member 30 are bent at a right angle and the bolt 80 is filled.
도 1 은 본 발명의 일 실시예에 의한 주 전극 단자(10)의 형상을 도시한 것이다. 이것은 세 부분으로 구분될 수 있는 데, 외부와 전기적 연결을 위하여 지지부재(30) 표면상으로 돌출되는 단자 연결부(12), 지지부재(30)의 통공(33)에 삽입되어 지지되는 지지부(14), 및 금속 패턴과 접촉되어 전기적으로 연결되는 접속부(16)가 그것이다. 상기 단자 연결부(12)와 지지부(14) 사이에는 지지부(14)에 대해 단자 연결부(12)가 소정 각도로 절곡되기 용이하도록 하는 절곡부(13)가 형성되어 있다. 단자 연결부(12)에는 외부와의 전기적 연결을 위한 볼트 삽입구(12a)가 형성되어 있다. 지지부(14)에는 밀착구(14a)가 형성되어 있는 데 그 역할은 다음과 같다. 지지부재(30)에 삽입된 단자들을 기판(40)에 직립시킨 후 케이스(60)를 씌운 다음 몰딩할 때, 몰딩 컴파운드(70)가 단자가 삽입된 지지부재(30)의 통공(33)의 틈새를 통하여 상기 밀착구(14a)로 스며들게 되어, 몰딩 컴파운드(70) 경화시 단자가 지지부재(30)에 견고하게 밀착되게 한다. 지지부(14)에는 또한 지지부재(30)에 걸리도록 걸림턱(14b)이 형성되어 있다. 접속부(16)는, 상부로부터 전달되는 하중 및 열팽창에 의한 응력이 금속 패턴과 솔더링되는 부위(16a)에 직접 전달되지 않도록, 지지부(14)의 직하방으로부터 기판(40)의 표면 방향으로 연장되어 탄성 구조를 가진다.1 illustrates a shape of a main electrode terminal 10 according to an embodiment of the present invention. This can be divided into three parts, the terminal connecting portion 12 protruding onto the surface of the support member 30 for the electrical connection with the outside, the support portion 14 is inserted into and supported in the through hole 33 of the support member 30 ), And a contact portion 16 in contact with and electrically connected to the metal pattern. Between the terminal connection part 12 and the support part 14, a bent part 13 is formed to facilitate bending of the terminal connection part 12 at a predetermined angle with respect to the support part 14. The terminal connection part 12 is formed with a bolt insertion hole 12a for electrical connection with the outside. Support portion 14 is formed in the close contact (14a) is as follows. When the terminals inserted into the support member 30 are upright on the substrate 40 and then the case 60 is covered and then molded, the molding compound 70 of the through hole 33 of the support member 30 into which the terminals are inserted is formed. It penetrates into the contact hole 14a through the gap, so that the terminal is firmly adhered to the support member 30 when the molding compound 70 is cured. The supporting portion 14 is also provided with a locking jaw 14b to be caught by the supporting member 30. The connecting portion 16 extends in the surface direction of the substrate 40 from directly below the supporting portion 14 so that the load and the stress due to thermal expansion transmitted from the upper portion are not directly transmitted to the portion 16a to be soldered with the metal pattern. It has an elastic structure.
이러한 주전극단자(10)들은 각각 그 형상을 같게하여 하나의 금형으로 제작함으로써 금형에 대한 추가 비용을 절약할 수 있다.Each of the main electrode terminals 10 may have the same shape, thereby manufacturing a single mold, thereby saving additional costs for the mold.
도 2 에 본 발명의 일 실시예에 의한 보조 전극 단자(20)의 형상을 도시한 것이다. 이것은 두 부분으로 구분될 수 있는 데, 일단은 외부와 전기적 연결을 위하여 상기 지지부재(30) 표면상으로 돌출되고, 타단은 상기 지지부재(30)의 통공(34)에 삽입되어 지지되는 단자부(24) 및 금속 패턴과 접촉되어 전기적으로 연결되는 접속부(26)가 그것이다. 상기 단자부(24)에는 외부와의 전기적 연결을 위한 외부 연결구(24a)와 걸림턱(24c)이 형성되어 있으며, 접속부(26)는 상기 주 전극 단자(10)에서와 같은 기능을 하는 탄성 구조를 가진다.Figure 2 shows the shape of the auxiliary electrode terminal 20 according to an embodiment of the present invention. This may be divided into two parts, one end of which protrudes onto the surface of the support member 30 for electrical connection with the outside, and the other end of which is inserted into and supported by the through hole 34 of the support member 30. 24 and contacts 26 which are in electrical contact with the metal pattern. The terminal portion 24 is formed with an external connector 24a and a locking jaw 24c for electrical connection to the outside, and the connection portion 26 has an elastic structure that functions as the main electrode terminal 10. Have
이러한 보조전극단자(20)들은 각각 그 형상을 같게하여 하나의 금형으로 제작함으로써 금형에 대한 추가 비용을 절약할 수 있다.Each of the auxiliary electrode terminals 20 may have the same shape, and thus may be manufactured in a single mold, thereby saving additional costs for the mold.
도 4 및 도 5 에는 본 발명의 일 실시예에 의한 지지부재(30)가 도시되어 있다. 지지부재(30)는, 일렬로 배열되면서 복수의 주 전극 단자(10)들을 서로 전기적으로 절연되도록 수납하는 복수의 주 전극 단자셀들과, 복수의 주 전극 단자셀들 사이의 연결부와, 복수의 보조 전극 단자(20)들을 서로 전기적으로 절연되도록 수납하는 복수의 보조 전극 단자셀들을 구비한다. 또한 주 전극 단자(10)들이 삽입될 통공(33)들이 지그재그형으로 배치되어 있으며, 보조 전극 단자(20)들이 삽입될 통공(34)들이 일렬로 배치되어 있다. 지지부재(30) 상면에는 너트 삽입홈(31) 및 볼트 삽입홈(32)이 이단으로 형성되어 있다. 상기 주 전극 단자셀들은 각각 그 측면이 테이퍼져 있어서 후속의 몰딩 공정 후에 잘 빠지지 않게 된다.4 and 5 show a support member 30 according to an embodiment of the present invention. The supporting member 30 includes a plurality of main electrode terminal cells arranged in a row and accommodating the plurality of main electrode terminals 10 to be electrically insulated from each other, a connecting portion between the plurality of main electrode terminal cells, and a plurality of main electrode terminal cells. A plurality of auxiliary electrode terminal cells for accommodating the auxiliary electrode terminals 20 to be electrically insulated from each other are provided. In addition, the through holes 33 into which the main electrode terminals 10 are inserted are arranged in a zigzag shape, and the through holes 34 into which the auxiliary electrode terminals 20 are inserted are arranged in a row. The nut insertion groove 31 and the bolt insertion groove 32 are formed in two stages on the upper surface of the supporting member 30. Each of the main electrode terminal cells is tapered on its side so that the main electrode terminal cells are not easily removed after a subsequent molding process.
본 발명에 의하여 전력용 반도체 모듈을 제작할 경우, 전극단자들을 최소의 금형으로 제작함으로써 금형에 대한 추가 비용을 절약할 수 있으며, 단자들을 기판에 접합할 때 단자들을 직립시키기 위해서 별도의 외부 지지구를 사용하지 않아도 되므로 비용 절감, 공정의 단순화 및 생산성 향상 측면에서 유리하다.When manufacturing the power semiconductor module according to the present invention, by reducing the additional cost for the mold by manufacturing the electrode terminals in a minimum mold, and a separate external support to stand up the terminals when bonding the terminals to the substrate This eliminates the need for cost savings, simplifies the process, and increases productivity.
Claims (18)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| KR1019960063292A KR100199279B1 (en) | 1996-12-09 | 1996-12-09 | Power semiconductor module |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960063292A KR100199279B1 (en) | 1996-12-09 | 1996-12-09 | Power semiconductor module |
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| Publication Number | Publication Date |
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| KR19980045131A KR19980045131A (en) | 1998-09-15 |
| KR100199279B1 true KR100199279B1 (en) | 1999-07-01 |
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| KR1019960063292A KR100199279B1 (en) | 1996-12-09 | 1996-12-09 | Power semiconductor module |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100873417B1 (en) * | 2002-04-16 | 2008-12-11 | 페어차일드코리아반도체 주식회사 | Power semiconductor module having optimized DBC pattern and terminal structure |
| KR100873418B1 (en) * | 2002-05-25 | 2008-12-11 | 페어차일드코리아반도체 주식회사 | Power semiconductor module having pin-structured terminal |
| KR101228841B1 (en) | 2011-10-04 | 2013-02-04 | 엘에스산전 주식회사 | A springy clip type apparatus for fastening power semiconductor |
| KR20150046962A (en) * | 2013-10-23 | 2015-05-04 | 삼성전기주식회사 | Power module package |
| CN105190882A (en) * | 2013-03-21 | 2015-12-23 | 三菱电机株式会社 | Semiconductor device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100398000B1 (en) * | 2001-09-11 | 2003-09-19 | 현대자동차주식회사 | Apparatus for gate driving for controlling of Insulated Gate Bipolar Transistor dual module |
-
1996
- 1996-12-09 KR KR1019960063292A patent/KR100199279B1/en not_active IP Right Cessation
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100873417B1 (en) * | 2002-04-16 | 2008-12-11 | 페어차일드코리아반도체 주식회사 | Power semiconductor module having optimized DBC pattern and terminal structure |
| KR100873418B1 (en) * | 2002-05-25 | 2008-12-11 | 페어차일드코리아반도체 주식회사 | Power semiconductor module having pin-structured terminal |
| KR101228841B1 (en) | 2011-10-04 | 2013-02-04 | 엘에스산전 주식회사 | A springy clip type apparatus for fastening power semiconductor |
| CN105190882A (en) * | 2013-03-21 | 2015-12-23 | 三菱电机株式会社 | Semiconductor device |
| KR20150046962A (en) * | 2013-10-23 | 2015-05-04 | 삼성전기주식회사 | Power module package |
| KR101942722B1 (en) * | 2013-10-23 | 2019-01-28 | 삼성전기 주식회사 | Power module package |
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| KR19980045131A (en) | 1998-09-15 |
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