KR100192376B1 - Fabrication method of liquid crystal display device - Google Patents

Abstract

The present invention relates to a liquid crystal display device, and to solve the problem of frequent occurrence of disconnection between a gate line and a data line, which are conductor lines, forming a semiconductor layer on a transparent insulating substrate, and Implanting impurity ions into the gate insulating film, forming a first conductive layer and a second conductive layer on the gate insulating film, and using the first conductive layer and the second conductive layer as masks to form a source in the semiconductor layer. / Forming a drain region, forming a first contact hole in the source region after forming the first interlayer insulating film on the front surface, forming a metal electrode on the first contact hole, and a second on the front surface Forming a second contact hole after forming the interlayer insulating film, forming a pixel electrode on the second contact hole, depositing a protective film on the entire surface, and not passing the metal line And forming a third contact hole in a portion of the gate line, and depositing and patterning a black matrix material in the third contact hole, wherein the liquid crystal display device has a double structure of a gate line and a data line. There is an effect of preventing the disconnection.

Description

Manufacturing method of liquid crystal display device

1 is a circuit diagram of a general liquid crystal display device.

2 is a layout diagram of a pixel unit of a conventional liquid crystal display.

3 (a) to 3 (i) are cross-sectional views of a manufacturing process sequence taken along the line AA ′ of FIG. 2.

4 is a layout diagram of a pixel portion of a liquid crystal display according to a first embodiment of the present invention.

5 (a) to (g) and (i ') are cross-sectional views of the manufacturing process sequence taken along line A-A' of FIG.

(h)-(i) is sectional drawing of the manufacturing process sequence along the B-B 'line | wire of FIG.

6 is a layout diagram of a pixel portion of a liquid crystal display according to a second embodiment of the present invention.

7 (a) to (g) and (i ') are sectional views of the manufacturing process of FIG. 6 along line A-A'.

(h)-(i) is sectional drawing of the manufacturing process sequence along the B-B 'line | wire of FIG.

* Explanation of symbols for the main parts of the drawings

40: transparent insulating substrate 41: semiconductor layer

42 photoresist 43 gate insulating film

44: first conductive layer 44 ': second conductive layer

45: first interlayer insulating film 46: first contact hole

47 metal electrode 48 second interlayer insulating film

49: second contact hole 50: pixel electrode

51: shield 52: black matrix

53: third contact hole

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device, and more particularly, to a manufacturing method of a liquid crystal display device in which a conductor line is formed in a double structure.

In general, as shown in FIG. 1, a liquid crystal display includes a gate line connected to a gate of a TFT, a data line connected to a source, and a storage capacitor having a common electrode and a liquid crystal crystal capacitor connected in parallel. There are a plurality of structures connected to the drain of the thin film transistor.

In the liquid crystal display device configured as described above, when a signal voltage is applied to a gate, the thin film transistor is turned on. During this time, a data voltage having information about an image is applied to the liquid crystal through the thin film transistor to drive the liquid crystal display device.

At this time, the total charge accumulated in the liquid crystal, which is a capacitor, is maintained until the gate is turned off and the next signal comes in.

Hereinafter, a liquid crystal display according to the related art will be described with reference to the accompanying drawings.

FIG. 2 is a layout view of a pixel part of a conventional liquid crystal display, and FIGS. 3A to 3I are cross-sectional views of a manufacturing process taken along line AA ′ of FIG. 2.

First, the semiconductor layer 2 is formed by depositing polycrystalline silicon on a transparent insulating substrate 1 such as glass or quartz, as shown in FIG.

Subsequently, as shown in FIG. 3B, after the photoresist 3 is deposited on the entire surface of the transparent insulating substrate 1, a photo of a predetermined region is formed to form a lower electrode of the storage capacitor. The resist 3 is patterned to be removed.

P or B ions are implanted using the photoresist 3 as a mask.

In this case, P (Phosphorus) is implanted when the N-channel device is used as the pixel driving TFT, and B (Boron) is implanted when the p-channel device is used.

Subsequently, as shown in FIG. 3C, the photoresist 3 used as a mask in the process is removed, and a gate insulating film 4 for gate insulation is formed on the semiconductor layer 2.

The gate electrode forming material is deposited on the gate insulating layer 4 and patterned so as to remain only in a portion where the channel region and the storage capacitor are to be formed, thereby defining the gate electrode line 5 and the upper electrode 5 'of the storage capacitor.

And as shown in (d) of FIG. 3, P (Phosphorus) or B (Boron) ions are implanted using the gate electrode 5 and the upper electrode 5 'of the storage capacitor as a mask, and the implantation is performed by a heat treatment process. Activated impurities are defined to define the source / drain regions of the TFT.

Subsequently, as shown in FIG. 3E, the first interlayer insulating film 6 for interlayer insulation is deposited on the front surface of the transparent insulating substrate 1, and then on the source region to form a metal electrode to be used as a data bus line. The gate insulating film 4 and the first interlayer insulating film 6 are etched to form a first contact hole 7.

As shown in FIG. 3 (f), the metal 8 is deposited and patterned on the first contact hole 7.

Subsequently, as shown in FIG. 3G, in order to form the second interlayer insulating film 9 on the front surface of the transparent insulating substrate 1 and to form the pixel electrode, the gate insulating film 4 and the first and first gates on the drain region are formed. The second interlayer insulating film 6 and 9 is etched to form a second contact hole 10.

As shown in FIG. 3 (h), a transparent material such as indium tin oxide (ITO) is deposited and patterned on the second contact stream 10 and the pixel region to form a pixel electrode 11 and a protective film on the entire surface. (12) is formed.

Subsequently, as shown in FIG. 3 (i), the black matrix material 13 is deposited and patterned to block light passing through the TFT region, thereby completing the liquid crystal display lower panel.

However, in the conventional liquid crystal display device as described above, the metal line (also referred to as data line) and the gate line are frequently disconnected due to the shrinking property of the heated metal as the process proceeds. There is a problem that the yield is reduced.

The present invention has been made to solve the above problems of the conventional liquid crystal display device, a method of manufacturing a liquid crystal display device for preventing the disconnection of the electrode line by the double structure of the data line and the gate line as a conductor line, respectively. The purpose is to provide.

A liquid crystal display device of the present invention for achieving the above object is characterized by the steps of forming a semiconductor layer on a transparent insulating substrate, implanting impurity ions on the semiconductor layer and forming a gate insulating film, Forming a first conductive layer and a second conductive layer, forming a source / drain region in the semiconductor layer using the first conductive layer and the second conductive layer as a mask, and forming a first conductive layer on the entire surface of the structure Forming a first contact hole on the source region after forming the interlayer insulating film, forming a metal electrode on the first contact hole, and forming a second contact hole after forming a second interlayer insulating film on the front surface Forming a pixel electrode on the second contact hole, depositing a passivation layer on the entire surface, and forming a third contact hole on a portion of the gate line through which the metal line does not pass. Is in the yirueojim comprises a system and comprising the steps of: patterning by depositing a black matrix material for the third contact hole.

A method of manufacturing a liquid crystal display device according to the present invention includes the steps of forming a semiconductor layer on a transparent insulating substrate, implanting impurity ions on the semiconductor layer and forming a gate insulating film, and forming a first conductive film on the gate insulating film. Forming a layer and a second conductive layer, forming a source / drain region in the semiconductor layer using the first conductive layer and the second conductive layer as a mask, and a first interlayer insulating film on the entire surface of the structure. Forming a first contact hole on the source region after forming the first electrode, forming a metal electrode on the first contact hole, and forming a second contact hole after forming a second interlayer insulating film on the front surface Forming a pixel electrode on the second contact hole and depositing a passivation layer on the front surface; forming a third contact hole on a portion of the metal line through which the gate line does not pass; Claim is in yirueojim by comprising the step of depositing and patterning the black matrix material in the third contact hole.

Hereinafter, a manufacturing method of the liquid crystal display device of the present invention will be described in detail with reference to the accompanying drawings.

First, the circuit configuration diagram of the liquid crystal display device of the present invention is the same as that of FIG. 1, and FIG. 4 is a layout diagram of the liquid crystal display device according to the first embodiment of the present invention.

5 is a cross-sectional view of the process of FIG. 4, wherein (a) to (g) and (i) are sectional views taken along line A-A 'of FIG. 4, and (h) to (i) are sectional views taken along line B-B' in FIG.

First, as shown in FIG. 5A, a semiconductor layer 41 is formed on a transparent insulating substrate 40 such as glass or quartz and patterned in an island form.

Subsequently, as shown in FIG. 5B, after the photoresist 42 is deposited on the front surface of the transparent insulating substrate 40, a photoresist of a predetermined region is formed to form a lower electrode of the storage capacitor. 42) to be removed.

The photoresist 42 is used as a mask for implanting impurities such as P (Phosphorus) or B (Boron).

Subsequently, as shown in FIG. 5C, the photoresist 42 used as a mask in the process is removed, and a gate insulating film 43 for gate insulation is formed on the semiconductor layer 41.

And defining a first conductive layer 44 and a second conductive layer 44 ′ by depositing a gate electrode forming material on the gate insulating layer 43, and then defining source / drain regions on the semiconductor layer 41. In order to ion implant the impurities (P or B) and heat treatment to activate the implanted impurities.

The first conductive layer is a gate electrode, and the second conductive layer is used as a common electrode as an upper electrode of the storage capacitor.

Subsequently, as shown in FIG. 5 (d), the first interlayer insulating film 45 for interlayer insulation is deposited on the front surface of the transparent insulating substrate 40, and then on the source region to form a metal electrode to be used as a data bus line. The gate insulating layer 43 and the first interlayer insulating layer 45 are etched to form a first contact hole 46.

As shown in FIG. 5E, after the metal 47 is deposited on the first contact hole 46 and patterned in a predetermined shape, a second interlayer insulating film 48 is formed on the entire surface of the first contact hole 46.

Subsequently, as shown in FIG. 5 (f), the gate insulating layer 43 and the first and second interlayer insulating layers 45 and 48 on the drain region are etched to form the pixel electrode, thereby forming the second contact hole 49. Form.

As shown in FIG. 5G, a transparent material such as ITO is deposited and patterned on the second contact hole 49 and the pixel region to form the pixel electrode 50, and then the protective film 51 is formed on the entire surface. Deposit.

Subsequently, as shown in FIG. 5 (h), the protective layer 51 and the first and second interlayer insulating layers 45 and 48 are removed to a portion where the metal line on the gate electrode line 44 does not pass. The hole 53 is formed.

Then, as shown in FIGS. 5 (i) and (i '), the black matrix material 52 for blocking light passing through the TFT region is deposited and then patterned to complete the lower panel of the liquid crystal display. do.

In this case, the black matrix material usually uses metal materials such as Cr, WSix, TiW, and the black matrix line passes over the gate line.

In the liquid crystal display according to the above process, since the black matrix material is connected to the middle of the gate line, a signal may be transmitted through the black matrix material even when a disconnection occurs on the gate line.

FIG. 6 is a layout view of a pixel portion showing a second embodiment of the liquid crystal display of the present invention, FIG. 7 is a process cross-sectional view, and (a) to (g) and (i ') are sectional views taken along line AA' of FIG. (H)-(i) of FIG. 7 is BB 'sectional drawing of FIG.

First, as shown in FIG. 7A, a semiconductor layer 41 is formed on a transparent insulating substrate 40 such as glass or quartz and patterned in an island form.

Subsequently, as shown in FIG. 7 (h), after the photoresist 42 is deposited on the front surface of the transparent insulating substrate 40, a photoresist of a predetermined region is formed to form a lower electrode of the storage capacitor. 4?) To be removed.

Ion implantation of impurities such as P (Phosporus) or B (Boron) is performed using the photoresist 42 as a mask.

Subsequently, as shown in FIG. 7C, the photoresist 42 used as a mask in the process is removed, and a gate insulating film 43 for gate insulation is formed on the semiconductor layer 41.

And defining a first conductive layer 44 and a second conductive layer 44 ′ by depositing a gate electrode forming material on the gate insulating layer 43, and then defining source / drain regions on the semiconductor layer 41. In order to ion implant the impurities (P or B) and heat treatment to activate the implanted impurities.

The first conductive layer is a gate electrode, and the second conductive layer is an upper electrode of the storage capacitor.

Subsequently, as shown in FIG. 7 (d), a first interlayer insulating film 45 for interlayer insulation is deposited on the front surface of the transparent insulating substrate 40 and then formed on the source region to form a metal electrode to be used as a data bus line. The gate insulating layer 43 and the first interlayer insulating layer 45 are etched to form a first contact hole 46.

As shown in FIG. 7E, after the metal 47 is deposited on the first contact hole 46 and patterned in a predetermined shape, a second interlayer insulating film 48 is formed on the entire surface.

Subsequently, as shown in FIG. 7 (f), the gate insulating layer 43 and the first and second interlayer insulating layers 45 and 48 on the drain region are etched to form the pixel electrode, thereby forming the second contact hole 49. Form.

As shown in FIG. 7G, a transparent material such as ITO is deposited and patterned on the second contact hole 49 and the pixel region to form the pixel electrode 50 and the passivation layer 51 on the entire surface. do.

Subsequently, as shown in FIG. 7 (h), the passivation layer 51 and the second interlayer insulating layer 48 are removed in a portion where the gate electrode line 44 on the data line 47 does not pass. 53).

Then, as shown in FIGS. 6 (i) and (i '), the black matrix material 52 for blocking light passing through the TFT region is deposited and then patterned to complete the lower panel of the LCD. do.

In this case, the black matrix material usually uses metal materials such as Cr, WSix, TiW, and the black matrix line passes over the gate line.

In the liquid crystal display according to the above process, since the black matrix material is connected to the middle of the metal line, a signal may be propagated through the black matrix material even when disconnection occurs on the metal line.

Accordingly, the liquid crystal display device according to the present invention can prevent the disconnection of the electrode line by using the black matrix as a double structure of the gate line and the metal line, thereby increasing the yield in the panel manufacturing process.

Claims (8)

Forming a semiconductor layer on the transparent insulating substrate, implanting impurity ions on the semiconductor layer and forming a gate insulating film, forming a first conductive layer and a second conductive layer on the gate insulating film, and Forming a source / drain region in the semiconductor layer using the first conductive layer and the second conductive layer as a mask, and forming a first interlayer insulating layer on the entire surface of the structure, and then forming a first contact hole on the source region. Forming a metal electrode on the first contact hole, forming a second interlayer insulating film on a front surface thereof, forming a second contact hole, and forming a pixel electrode on the second contact hole. Depositing a protective film on the entire surface, forming a third contact hole in a portion of the gate line through which the metal line does not pass, and depositing a black matrix material in the third contact hole Method for manufacturing a liquid crystal display device characterized by including the step of turning yirueojim. The method of claim 1, wherein the first conductive layer and the second conductive layer are formed of the same material. The method of claim 1, wherein the first conductive layer is a gate electrode, and the second conductive layer is an upper electrode of the storage capacitor. The method of claim 1, wherein the black matrix material comprises a metal material such as Cr, WSix, TiW, or the like. Forming a semiconductor layer on the transparent insulating substrate, implanting impurity ions on the semiconductor layer and forming a gate insulating film, forming a first conductive layer and a second conductive layer on the gate insulating film, and Forming a source / drain region in the semiconductor layer using the first conductive layer and the second conductive layer as a mask, and forming a first interlayer insulating layer on the entire surface of the structure, and then forming a first contact hole on the source region. Forming a metal electrode on the first contact hole, forming a second interlayer insulating film on a front surface thereof, forming a second contact hole, and forming a pixel electrode on the second contact hole. Depositing a protective film on the entire surface, forming a third contact hole in a portion of the metal line not passing through the gate line, and depositing a black matrix material on the third large contact hole Method for manufacturing a liquid crystal display device characterized by including the step of turning yirueojim. The method of claim 5, wherein the first conductive layer and the second conductive layer are formed of the same material. The method of claim 5, wherein the first conductive layer is a gate electrode, and the second conductive layer is an upper electrode of the storage capacitor. The method of claim 5, wherein the black matrix material uses a metal material such as Cr, WSix, or TiW.