KR0172466B1 - Element isolation method of semiconductor device - Google Patents
Element isolation method of semiconductor device Download PDFInfo
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- KR0172466B1 KR0172466B1 KR1019940035042A KR19940035042A KR0172466B1 KR 0172466 B1 KR0172466 B1 KR 0172466B1 KR 1019940035042 A KR1019940035042 A KR 1019940035042A KR 19940035042 A KR19940035042 A KR 19940035042A KR 0172466 B1 KR0172466 B1 KR 0172466B1
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Abstract
본 발명은 반도체 기판 상에 형성되는 소자간을 전기적으로 분리하기 위한 소자분리 산화막 형성 과정에서 소자분리 산화막 단부에 발생하는 버즈빅(bird's beak) 길이를 감소시킬 수 있는, 반도체 소자의 소자분리막 형성 방법에 관한 것으로, 산화방지 패턴 형성 후 과도식각을 실시하여 활성영역과 소자분리 영역의 경계부위에 함몰영역을 형성하고, 함몰영역 바닥 및 양측벽과 소자분리 영역 상에 산화방지 역할을 하는 나이트로젠 댕글링 본드(nitrogen dangling)층을 형성하여 버즈빅 길이의 증가를 억제하는 방법이다. 이에 의해, 필드산화막의 버즈빅 길이를 감소시킴으로써 활성영역이 축소되는 것을 방지하여 반도체 소자의 고집적화에 기여 할 수 있다.The present invention provides a method for forming a device isolation film of a semiconductor device, which can reduce a bird's beak length generated at an end of the device isolation oxide film during a device isolation oxide film formation process for electrically separating devices formed on a semiconductor substrate. Nitrogen dangling, which forms a recessed region at the boundary between the active region and the device isolation region by performing excessive etching after the formation of the anti-oxidation pattern, and acts as an antioxidant on the bottom of the recessed region and both sidewalls and the device isolation region. A method of forming a ring bonding layer (nitrogen dangling) to suppress the increase in the length of the buzz beak. As a result, by reducing the length of the field oxide film, the active region can be prevented from being reduced, thereby contributing to high integration of the semiconductor device.
Description
제1a도 및 제1b도는 종래기술에 따른 필드산화막 형성 공정 단면도1a and 1b is a cross-sectional view of the field oxide film forming process according to the prior art
제2a도 및 제2b도는 본 발명의 일실시예에 따른 필드산화막 형성 공정 단면도2a and 2b is a cross-sectional view of the field oxide film forming process according to an embodiment of the present invention
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
11 : 실리콘기판 12 : 패드산화막11 silicon substrate 12 pad oxide film
13 : 폴리실리콘막 14 : 질화막13: polysilicon film 14: nitride film
15 : 나이트로젠 댕글링 본드층 16 : 필드산화막15: nitrogen dangling bond layer 16: field oxide film
본 발명은 반도체 장치 제조 분야에 관한 것으로, 특히 반도체 기판 상에 형성되는 소자간을 전기적으로 분리하기 위한 소자분리 산화막 형성 과정에서 소자분리 산화막 단부에 발생하는 버즈빅(bird's beak) 길이를 감소시킬 수 있는, 반도체 소자의 소자분리막 형성 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to the field of semiconductor device manufacturing, and in particular, it is possible to reduce the bird's beak length occurring at the end of device isolation oxide in the process of forming device isolation oxide for electrically separating devices formed on the semiconductor substrate. The present invention relates to a method for forming a device isolation film of a semiconductor device.
일반적으로, 산화막은 모든 방향으로 균일하게 성장하는 특성이 있어 필드산화막(field oxide) 형성 과정에서 산화방지 패턴 측면 하부로 산화막이 침투하여,활성영역을 감소시키기 때문에 반도체 소자의 집적도를 저하시키는 주요 요인이 되고 있다.In general, the oxide film has a characteristic of uniformly growing in all directions, so that the oxide film penetrates to the lower side of the anti-oxidation pattern during the field oxide formation process and reduces the active area, thereby reducing the integration density of the semiconductor device. It is becoming.
첨부된 도면 제1a도 및 제1b도는 종래기술인 PBL(Polysilicon Buffered of Locos)에 따른 필드산화막 형성 공정 단면도로서, 도면부호 1은 실리콘기판, 2는 패드산화막, 3은 폴리실리콘막, 4는 질화막을 각각 나타낸다.1A and 1B are cross-sectional views of a field oxide film formation process according to the prior art Polysilicon Buffered of Locos (PBL), wherein 1 is a silicon substrate, 2 is a pad oxide film, 3 is a polysilicon film, and 4 is a nitride film. Represent each.
제1a도는 실리콘기판(1) 상에 패드산화막(2), 폴리실리콘막(3) 및 질화막 (4)을 차례로 적충하고, 질화막(4), 폴리실리콘막(3) 및 패드산화막(2)을 패터닝하여 활성영역 상에 산화방지 패턴을 형성한 상태를 보이고 있다.FIG. 1A shows a pad oxide film 2, a polysilicon film 3, and a nitride film 4 sequentially stacked on the silicon substrate 1, and the nitride film 4, the polysilicon film 3, and the pad oxide film 2 are stacked. It is shown that the anti-oxidation pattern is formed on the active region by patterning.
제1b도는 산화공정을 실시하여 필드산화막(5)을 형성한 것을 보이고 있다.FIG. 1B shows that the field oxide film 5 is formed by performing an oxidation process.
상기와 같은 필드산화막 형성 과정에서, 스트레스 방지충인 패드산화막(2)이 산소를 흡수해 가면서 활성영역 방향으로 버즈빅이 발생한다. 또한, 필드산화막의 부피팽창이 심화되면서 산화방지막인 폴리실리콘막이 산화되어 스트레스를 증가시켜 버즈빅 증가의 원인을 제공하는 등의 문제점이 있다.In the field oxide film formation process as described above, while the pad oxide film 2, which is a stress preventing insect, absorbs oxygen, buzz big occurs in the direction of the active region. In addition, as the volume expansion of the field oxide film is intensified, there is a problem that the polysilicon film, which is an antioxidant film, is oxidized to increase the stress to provide a cause of the increase of the buzz big.
상기와 같은 문제점을 해결하기 위하여 안출된 본 발명은, 버즈빅의 길이 증가를 방지할 수 있는 반도체 소자의 소자분리막 형성 방법을 제공하는데 그 목적이 있다.The present invention has been made to solve the above problems, an object of the present invention is to provide a method for forming a device isolation film of a semiconductor device capable of preventing the increase in the length of the buzz beak.
상기 목적을 달성하기 위하여 본 발명은, 실리콘 기판의 활성영역 상에 산화방지 패턴을 형성하는 제1단계 ; 상기 산화방지 패던 주변의 상기 실리콘 기판을 식각하여, 상기 활성영역과 소자분리영역의 경계에 함몰영역을 형성하는 제2단계 ; 상기 함몰영역의 바닥 및 양측벽과 상기 소자분리영역에 산화방지 역할을 하는 나이트로젠 댕글링 본드층을 형성하는 제3단계 ; 및 산화공정을 실시하여 그 단부가 상기 함몰영역에 위치하는 소자분리막을 형성하는 제4단계를 포함하는 반도체 소자의 소자분리막 형성 방법을 제공한다.The present invention to achieve the above object, the first step of forming an antioxidant pattern on the active region of the silicon substrate; Etching the silicon substrate around the anti-oxidation paddle to form a recessed region at a boundary between the active region and the device isolation region; A third step of forming a nitrogen dangling bond layer in the bottom and side walls of the recessed region and the device isolation region to prevent oxidation; And a fourth step of forming an isolation layer having an end portion positioned in the recessed area by performing an oxidation process.
본 발명은 산화방지 패턴 형성 후 과도식각을 실시하여 활성영역과 소자분리 영역의 경계 부위에 함몰영역을 형성하고, 함몰영역 바닥 및 양측벽과 소자분리 영역 상에 산화방지 역할을 하는 나이트로젠 댕글링 본드(nitrogen dangling)층을 형성하여 버즈빅 길이의 증가를 억제하는 방법이다.The present invention forms a recessed region at the boundary between the active region and the device isolation region by performing excessive etching after the formation of the oxidation pattern, and a nitrogen dangling that serves as an antioxidant on the bottom of the recessed region and on both sidewalls and the device isolation region. It is a method of suppressing an increase in the length of the buzz bead by forming a bond (nitrogen dangling) layer.
제2a도 및 제2b도는 본 발명의 일실시예에 따른 반도체 소자의 필드산화막의 형성 공정 단면도로서, 도면부호 11은 실리콘기판, 12는 패드산화막, 13은 폴리실리콘막, 14는 질화막, 15는 나이트로젠 댕글링 본드층, 16은 필드산화막을 각각 나타낸다.2A and 2B are cross-sectional views of forming a field oxide film of a semiconductor device according to an embodiment of the present invention, wherein reference numeral 11 is a silicon substrate, 12 is a pad oxide film, 13 is a polysilicon film, 14 is a nitride film, and 15 is a Nitrogen dangling bond layers 16 denote field oxide films, respectively.
제2a도는 실리콘기판(11) 상에 150Å 두께의 패드산화막(12), 500Å 두께의 폴리실리콘막(13), 2000Å 두께의 질화막(14)을 차례로 형성한 후, 질화막(14), 폴리실리콘막(13) 및 패드산화막(12)을 선택적으로 식각하여 활성영역 상에 산화방지 패턴을 형성한 후, 산화방지 패턴 주위의 노출된 실리콘 기판(11)을 과도식각해서 활성영역과 필드영역의 경계에 함몰영역(A)의 바닥 및 양측벽과 필드영역의 실리콘 기판(11) 상에 15Å 내지 30Å 두께로 나이트로젠 댕글링 본드층(15)을 형성한 상태를 보이고 있다. 상기 나이트로젠 댕글링 본드층(15)은 N2O 또는 NH3가스를 O2분위기에서 반응시켜 SiO2본드에서 Si-N, O-N형태로 존재하는 나이트로젠 댕글링 본드를 형성함으로써 이루어진다.2A shows a 150 nm thick pad oxide film 12, a 500 mm thick polysilicon film 13, and a 2000 mm thick nitride film 14 are sequentially formed on the silicon substrate 11, followed by a nitride film 14 and a polysilicon film. (13) and the pad oxide film 12 are selectively etched to form an anti-oxidation pattern on the active area, and then overetched the exposed silicon substrate 11 around the anti-oxidation pattern to the boundary between the active area and the field area. The Nitrogen dangling bond layer 15 is formed on the bottom and both side walls of the recessed area A and the silicon substrate 11 in the field area with a thickness of 15 kPa to 30 kPa. The nitrogen dangling bond layer 15 is formed by reacting N 2 O or NH 3 gas in an O 2 atmosphere to form a nitrogen dangling bond present in Si—N, ON form in a SiO 2 bond.
제2b도는 산화공정을 실시하여 필드산화막(16)을 형성한 상태를 보이고 있다. 이때, 필드산화막(13)의 버즈빅 부분(B)은 활성영역과 필드영역의 경계에 형성된 함몰영역(A) 내에 형성되며, 함몰영역(A) 측벽에 형성된 나이트로젠 댕글링 본드층에 의해 활성영역 쪽으로 산화막 성장이 억제될 뿐만 아니라, 함몰영역(A) 바닥 및 양측벽에 형성된 나이트로젠 댕글링 본드층에 의해 산화막 성장이 억제되어 산화막의 두께 증가에 따른 버즈빅 길이 증가를 감소시킬 수 있다.2B shows a state in which the field oxide film 16 is formed by performing an oxidation process. At this time, the buzz big part B of the field oxide film 13 is formed in the recessed area A formed at the boundary between the active area and the field area, and is activated by the nitrogen dangling bond layer formed on the sidewall of the recessed area A. Not only the oxide film growth is suppressed toward the region, but also the growth of the oxide film is inhibited by the nitrogen dangling bond layers formed on the bottom and both side walls of the recessed region A, thereby reducing the increase in the length of Buzzvik according to the thickness of the oxide film.
전술한 바와 같이 이루어지는 본 발명은 활성영역과 필드영역의 경계에 함몰영역을 형성하고, 함몰영역 바닥 및 양측벽과 필드영역 상에 나이트로젠 댕글링 본드층을 형성하여 필드산화막 형성 공정에서 필드산화막의 단부가 함몰영역 내에 형성되도록 함으로써 버즈빅 길이의 증가를 억제할 수 있으며, 고온(1150℃)의 습식산화 분위기에서 필드산화막이 두껍게 형성됨에 따라 버즈빅의 길이가 증가되는 것을 방지할 수 있다.According to the present invention as described above, a depression region is formed at the boundary between the active region and the field region, and a nitrogen dangling bond layer is formed on the bottom of the recess region and on both side walls and the field region to form the field oxide film in the field oxide film formation process. By allowing the end portion to be formed in the recessed area, it is possible to suppress an increase in the length of the buzzvik, and to prevent the length of the buzzvik from being increased as the field oxide film is formed thick in a wet oxidation atmosphere at a high temperature (1150 ° C.).
상기와 같이 이루어지는 본 발명은 필드산화막의 버즈빅 길이를 감소시킴으로써 활성영역이 축소되는 것을 방지하여 반도체 소자의 고집적화에 기여할 수 있다.According to the present invention, the active region is reduced by reducing the length of the field oxide film, thereby contributing to high integration of the semiconductor device.
Claims (6)
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| KR1019940035042A KR0172466B1 (en) | 1994-12-19 | 1994-12-19 | Element isolation method of semiconductor device |
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| KR1019940035042A KR0172466B1 (en) | 1994-12-19 | 1994-12-19 | Element isolation method of semiconductor device |
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