KR0166808B1 - Method of manufacturing solid-state image sensor - Google Patents
Method of manufacturing solid-state image sensor Download PDFInfo
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- KR0166808B1 KR0166808B1 KR1019950048240A KR19950048240A KR0166808B1 KR 0166808 B1 KR0166808 B1 KR 0166808B1 KR 1019950048240 A KR1019950048240 A KR 1019950048240A KR 19950048240 A KR19950048240 A KR 19950048240A KR 0166808 B1 KR0166808 B1 KR 0166808B1
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 239000007787 solid Substances 0.000 claims abstract description 14
- 238000001444 catalytic combustion detection Methods 0.000 claims abstract description 8
- 239000002195 soluble material Substances 0.000 claims abstract description 6
- 238000004806 packaging method and process Methods 0.000 claims abstract description 5
- 239000000463 material Substances 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 3
- 239000005018 casein Substances 0.000 claims description 2
- BECPQYXYKAMYBN-UHFFFAOYSA-N casein, tech. Chemical compound NCCCCC(C(O)=O)N=C(O)C(CC(O)=O)N=C(O)C(CCC(O)=N)N=C(O)C(CC(C)C)N=C(O)C(CCC(O)=O)N=C(O)C(CC(O)=O)N=C(O)C(CCC(O)=O)N=C(O)C(C(C)O)N=C(O)C(CCC(O)=N)N=C(O)C(CCC(O)=N)N=C(O)C(CCC(O)=N)N=C(O)C(CCC(O)=O)N=C(O)C(CCC(O)=O)N=C(O)C(COP(O)(O)=O)N=C(O)C(CCC(O)=N)N=C(O)C(N)CC1=CC=CC=C1 BECPQYXYKAMYBN-UHFFFAOYSA-N 0.000 claims description 2
- 235000021240 caseins Nutrition 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 34
- 238000011109 contamination Methods 0.000 abstract description 4
- 239000011248 coating agent Substances 0.000 abstract description 2
- 238000000576 coating method Methods 0.000 abstract description 2
- 238000003384 imaging method Methods 0.000 description 5
- 230000008676 import Effects 0.000 description 5
- 238000007689 inspection Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000002390 adhesive tape Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000012858 packaging process Methods 0.000 description 2
- 239000011863 silicon-based powder Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
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- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
Abstract
본 발명은 고체촬상소자에 관한 것으로, 특히, 웨이퍼상에 복수개 형성된 CCD를 패키지화(化)가 가능하게 개별화하는 SAW 공정을 웨이퍼 전면에 수용성 물질을 도포한 후에 실시하여 패키지 어셈블리 공정에서 SAW 공정으로 발생하는 소자의 오염을 줄여 소자의 생산수율 및 특성을 높이는데 적당하도록 한 고체촬상소자의 제조방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid state image pickup device, and in particular, a SAW process of packaging a plurality of CCDs formed on a wafer so as to be packaged separately is carried out after coating a water-soluble material on the entire surface of the wafer to generate a SAW process in a package assembly process. The present invention relates to a method for manufacturing a solid-state image pickup device, which is suitable for reducing the contamination of the device to increase the production yield and characteristics of the device.
Description
제1도는 일반적인 고체촬상소자의 구조단면도.1 is a structural cross-sectional view of a general solid state image pickup device.
제2도는 종래의 CCD의 패키지 어셈블리 순서도.2 is a flow chart of a package assembly of a conventional CCD.
제3도는 본 발명의 고체촬상소자의 공정단면도.3 is a process cross-sectional view of the solid state image pickup device of the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
30 : 포토 다이오드 31 : VCCD30: photodiode 31: VCCD
32 : 제 1 평탄층 33 : 칼라필터32: first flat layer 33: color filter
34 : 제 2 평탄층 35 : 마이크로렌즈34: second flat layer 35: microlens
36 : 수용성 물질36: water soluble substance
본 발명은 고체촬상소자에 관한 것으로, 특히 패키지 어셈블리 공정에서 SAW 공정으로 발생하는 소자의 오염을 줄여 소자의 생산수율 및 특성을 높이는데 적당하도록 한 고체촬상소자의 제조방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid state image pickup device, and more particularly, to a method for manufacturing a solid state image pickup device, which is suitable for reducing the contamination of a device generated by a SAW process in a package assembly process, thereby increasing the production yield and characteristics of the device.
일반적으로 CCD 패키지는 고체촬상소자를 최종유저(End User)가 사용하기 용이하도록 개별화한 상태를 말한다.In general, a CCD package refers to a state in which a solid state imaging device is individualized to be easily used by an end user.
패키지화하는 경우 재질에 따라 플라스틱과 세라믹 타입으로 크게 나눌 수 있으며, 각 형태에 따라 더 세분화할 수 있다.When packaged, it can be divided into plastic and ceramic types according to the material, and can be further subdivided according to each type.
현재, CCD에 적용되는 패키지는 세라믹 타입의 측면장착(Side Brazed) 형태로써 글래스리드(Glass Lid)를 씰링(Sealing)하는 것이다.Currently, the package applied to the CCD is to seal the glass lid in the form of a side brazed ceramic type.
이하, 첨부된 도면을 참고하여 고체촬상소자의 제조방법에 대하여 설명하면 다음과 같다.Hereinafter, a method of manufacturing a solid state image pickup device will be described with reference to the accompanying drawings.
제1도는 일반적인 고체촬상소자의 구조단면도이고, 제2도는 종래의 CCD의 패키지 어셈블리 순서도이다.1 is a structural cross-sectional view of a general solid state image pickup device, and FIG. 2 is a flowchart of a package assembly of a conventional CCD.
고체촬상소자(Solid State Image Sensing Device)는 광학적인 화상을 전기적인 신호로 변환하는 장치로써, 현재 CCD(Charge Coupled Device)를 이용한 것이 주종을 이루고 있다.Solid state image sensing devices (Solid State Image Sensing Device) is a device that converts an optical image into an electrical signal, the current use is mainly using a Charge Coupled Device (CCD).
CCD는 제1도에서와 같이, 반도체 기판에 매트릭스 형태로 복수개 배열되어 빛에 의한 영상을 전기적인 신호로 변환하는 포토 다이오드(1)와, 상기 포토 다이오드(1) 사이에 수직으로 복수개 배열되어 포토 다이오드(1)에서 생성된 영상전하는 일방향으로 수직 전송하는 VCCD(2)와, 상기 포토 다이오드(1)와 VCCD(2)가 구성된 반도체 기판의 전면에 후공정에서의 단차를 줄이기 위해 형성되는 제 1 평탄층(3)과, 상기 제 1 평탄층(3) 상에 형성되어 각각 R.G.B의 특정 파장의 빛만을 통과시켜 포토 다이오드(1) 영역에 조사하는 칼라 필터층(4)과, 상기 칼라 필터층(4)상에 후공정에서의 단차를 줄이기 위해 형성되는 제 2 평탄층(5)과, 상기 제 2 평탄층(5)상에 각각의 포토 다이오드(1) 영역에 대응하게 형성되어 상기 칼라 필터층(4)을 포함하는 각각의 포토 다이오드(1) 영역으로 빛을 집광하는 마이크로렌즈(6)를 포함하여 구성된다.As shown in FIG. 1, a plurality of CCDs are arranged in a matrix form on a semiconductor substrate to convert an image by light into an electrical signal, and a plurality of CCDs are arranged vertically between the photodiodes 1. The first charge is formed on the front surface of the semiconductor substrate including the VCCD (2) for vertical transmission in one direction and the photodiode (1) and the VCCD (2) formed in the diode (1) to reduce the step difference in the post-process. A color filter layer 4 formed on the flat layer 3, the first flat layer 3 and irradiating the photodiode 1 region by passing only light having a specific wavelength of RGB, respectively, and the color filter layer 4 The second flat layer 5 is formed on the second flat layer 5 so as to reduce the step in the subsequent process, and the color filter layer 4 is formed on the second flat layer 5 corresponding to the respective photodiode 1 regions. Each photodiode 1 area comprising It comprises a micro lens 6 for collecting light.
상기와 같은 구조의 CCD 제조공정이 끝나 Fab-out된 웨이퍼는 패키지 어셈블리 공정을 수행하게 된다.The wafer fabricated fab-out after the CCD manufacturing process of the above structure is to perform a package assembly process.
즉, 제2도에서와 같이, 웨이퍼 수입검사를 하게 된다(제2도는 측면장착 형태의 Area CCD 칩의 어셈블리에 대한 것이다.That is, as shown in Fig. 2, the wafer import inspection is performed (Fig. 2 shows the assembly of an area CCD chip of a side-mounted type.
웨이퍼 수입검사는 고배율 현미경(50× 이상)과 튀저(Tweezers)를 이용하여 패키지 적용여부를 검사하는 것이다.Wafer import inspection uses a high magnification microscope (50 × or larger) and Tweezers to check package application.
그리고 UV 테이프 수입검사를 실시하여 웨이퍼 부착 및 칩 탈착의 적합여부를 판단하게 된다.UV tape import inspection is then carried out to determine the suitability of wafer attachment and chip removal.
이어, 웨이퍼를 접착 테이프에 부착하고(Wafer Mount), 다이싱 소우잉(Dicing Sawing) 공정을 한다.Subsequently, the wafer is attached to an adhesive tape (Wafer Mount) and a dicing sawing process is performed.
다이싱 소우잉 공정은 CCD용 웨이퍼를 패키지화할 수 있게 개별적으로 칩화(Chip化)하는 것이다.Dicing sawing process is to chip individually to package the wafer for CCD.
그리고 다이부착(Die Attachment) 공정을 수행하는데, 다이 부착공정은 SAW가 끝나 프레임(Frame)부착 상태의 웨이퍼 즉, CCD 칩을 세라믹 서브스트레이트(Ceramic Substrate)에 접착제를 사용하여 부착시키는 작업이다.In addition, a die attach process is performed. The die attach process is an operation of attaching a wafer in a frame attached state, that is, a CCD chip, to a ceramic substrate using an adhesive after SAW is completed.
이어, SAW가 완료된 웨이퍼를 접착 테이프로부터 쉽게 떼어내기 위하여 UV를 조사한다.Subsequently, UV is irradiated to easily remove the SAW-completed wafer from the adhesive tape.
그리고, 에폭시 큐어링(Epoxy Curing), 와이어 본딩, 씰링(Sealing) 등의 공정을 순차적으로 수행하여 CCD의 패키지 공정을 완료하게 된다.In addition, epoxy curing, wire bonding, sealing, and the like are sequentially performed to complete the packaging process of the CCD.
그러나, 상기와 같은 종래의 패키지 어셈블리 공정에 있어서는 다음과 같은 문제점이 있었다.However, the above conventional package assembly process has the following problems.
SAW 공정시에 탈이온수(D.I Water)만을 분무하는 상태에서 진행하기 때문에 실리콘 가루 등의 미세한 이물질이 마이크로렌즈 사이에 남게 되어 블랙 결점(Black Defect)을 일으켜 생산수율을 저하시키는 문제점이 있었다.Since only deionized water (D.I Water) is sprayed during the SAW process, fine foreign matter such as silicon powder remains between the microlenses, resulting in black defects, thereby lowering the production yield.
본 발명은 상기와 같은 종래의 고체촬상소자의 제조방법의 문제점을 해결하기 위하여 안출한 것으로, SAW 공정을 전면에 수용성 물질을 도포한 후에 실시하여 SAW 공정으로 발생하는 소자의 오염을 줄여 소자의 생산수율 및 특성을 높이는데 적당하도록 한 고체촬상소자의 제조방법을 제공하는데 그 목적이 있다.The present invention has been made to solve the problems of the conventional method for manufacturing a solid-state imaging device as described above, the SAW process is carried out after coating the water-soluble material on the front to reduce the contamination of the device generated by the SAW process to produce the device It is an object of the present invention to provide a method for manufacturing a solid state image pickup device, which is suitable for increasing yield and characteristics.
상기의 목적을 달성하기 위한 본 발명의 고체촬상소자의 제조방법은 웨이퍼상에 복수개 형성된 CCD를 패키지화(化)가 가능하게 개별화하는 SAW 공정을 웨이퍼 전면에 수용성 물질을 도포한 후에 이루어짐을 특징으로 한다.The method for manufacturing a solid-state imaging device of the present invention for achieving the above object is characterized in that the SAW process for packaging a plurality of CCDs formed on a wafer to be individualized is applied after applying a water-soluble material to the entire surface of the wafer. .
이하, 첨부된 도면을 참고하여 본 발명의 고체촬상소자의 제조방법에 대하여 상세히 설명하면 다음과 같다.Hereinafter, a method of manufacturing a solid state image pickup device of the present invention will be described in detail with reference to the accompanying drawings.
제3도는 본 발명의 고체촬상소자의 공정단면도이다.3 is a process sectional view of the solid state image pickup device of the present invention.
본 발명의 고체촬상소자는 반도체 기판에 매트릭스 형태로 복수개 배열되어 빛에 의한 영상을 전기적인 신호로 변환하는 포토 다이오드(30)와, 상기 포토 다이오드(30) 사이에 수직으로 복수개 배열되어 포토 다이오드(30)에서 생성된 영상전하를 일반향으로 수직 전송하는 VCCD(31)와, 상기 포토 다이오드(30)와 VCCD(31)가 구성된 반도체 기판의 전면에 형성된 제 1 평탄층(32)과, 상기 제 1 평탄층(32)상에 형성되어 각각 R.G.B의 특정 파장의 빛만을 통과시켜 포토 다이오드(30) 영역에 조사하는 칼라 필터층(33)과, 상기 칼라 필터층(33)상에 형성되는 제 2 평탄층(34)과, 상기 제 2 평탄층(34) 상에 각각의 포토 다이오드(30) 영역에 대응하게 형성되어 상기 칼라 필터층(33)을 포함하는 각각의 포토 다이오드(30) 영역으로 빛을 집광하는 마이크로렌즈(35)를 포함하여 구성되는 CCD를 최종유저가 이용하기 쉽도록 각각 개별화하는 패키지 어셈블리 공정을 다음과 같이 수행한다(상기와 같은 CCD는 1장의 웨이퍼상에 350~400개 형성된다).The solid-state imaging device of the present invention includes a plurality of photodiodes 30 arranged in a matrix form on a semiconductor substrate to convert an image by light into an electrical signal, and a plurality of photodiodes 30 arranged vertically between the photodiodes 30. VCCD 31 for vertically transferring the image charges generated at 30), a first flat layer 32 formed on the front surface of the semiconductor substrate including the photodiode 30 and VCCD 31, and the first A color filter layer 33 formed on the first flat layer 32 and irradiating the photodiode 30 region by passing only light having a specific wavelength of RGB, respectively, and a second flat layer formed on the color filter layer 33. And 34 corresponding to each photodiode 30 region on the second flat layer 34 to condense light to each photodiode 30 region including the color filter layer 33. Including microlenses 35 Performs the package assembly process of individualizing the CCDs for easy use by the end user as follows (the above CCDs are 350-400 on one wafer).
웨이퍼 수입검사, UV 테이프 수입검사, 웨이퍼 마운트(Wafer Mount) 공정을 수행한다.Wafer import inspection, UV tape import inspection and wafer mount process are performed.
그리고 소자의 오염을 막기 위해 웨이퍼상에 복수개 형성된 CCD를 패키지화(化) 가능하게 개별화하는 SAW 공정을 수행하기 전에, 웨이퍼 전면에 감광성 물질이 포함되지 않은 카제인(염색층 재료) 등의 수용성 물질(36)을 도포한 후에 SAW 공정을 수행한다.In order to prevent contamination of the device, a water-soluble material such as casein (dyed layer material) that does not contain a photosensitive material on the entire surface of the wafer before performing the SAW process for packaging and individualizing the plurality of CCDs formed on the wafer. ) Is applied and then SAW process is performed.
이때, SAW 공정은 탈이온수(DI Water)를 분사시키며 진행하게 된다.At this time, the SAW process is performed by spraying DI water.
상기와 같이 SAW 공정이 완료되면 다이 어티치먼트(Die Attachment) → UV조사 → 에폭시 큐어링(Epoxy Curing) → 와이어 본딩 → 실(Seal) → 리드 트리밍(Lead Trimming) → 후면 마킹 및 큐어링(Back-side Mark Curing) 등의 공정을 수행하여 CCD 패키지 어셈블리 공정을 완료하게 된다.When SAW process is completed as above, Die Attachment → UV irradiation → Epoxy Curing → Wire Bonding → Seal → Lead Trimming → Back Marking and Curing -side Mark Curing) to complete the CCD package assembly process.
상기와 같은 본 발명의 고체촬상소자의 제조방법은 SAW 공정전에 마이크로렌즈 사이의 V자형의 미세한 부분에 수용성 물질을 도포하고 SAW 공정을 수행하므로 SAW 공정시에 분사되는 탈이온수(DI Water)에 의해 실리콘가루 등의 이물질이 쉽게 제거되므로 패키지 공정후 실장 테스트에서, 블랙 디펙트를 감소시켜 CCD 전체적인 생산수율 및 특성을 향상시키는 효과가 있다.The method for manufacturing a solid-state imaging device of the present invention as described above is coated with a water-soluble material on the V-shaped fine portion between the microlenses before the SAW process and the SAW process is performed by DI water sprayed during the SAW process. Since foreign substances such as silicon powder are easily removed, in the packaging test after the packaging process, black defects are reduced to improve the overall production yield and characteristics of the CCD.
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