KR0161449B1 - Cleaning apparatus for semiconductor process - Google Patents
Cleaning apparatus for semiconductor process Download PDFInfo
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- KR0161449B1 KR0161449B1 KR1019950040262A KR19950040262A KR0161449B1 KR 0161449 B1 KR0161449 B1 KR 0161449B1 KR 1019950040262 A KR1019950040262 A KR 1019950040262A KR 19950040262 A KR19950040262 A KR 19950040262A KR 0161449 B1 KR0161449 B1 KR 0161449B1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67706—Mechanical details, e.g. roller, belt
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
본 발명은 반도체 공정용 세척장치에 관한 것으로, 순수와 질소가스등을 사용하여 반도체 소자의 제조공정중에 발생된 각종의 오염을 제거할 수 있도록 된 반도체 공정용 세척장치에 있어서, 중앙의 작업대를 중심으로 양방향으로 세척수단을 배치한 것을 특징으로 한다. 따라서, 웨이퍼의 세척처리시의 정체를 없앨 수 있으며, 이에 따라 금속배선공정 후의 세척지연에 따른 공정불량을 줄일 수 있게 된다. 또한, 설치공간을 최소화 함으로써 공간절약 및 설비 효율화를 실현할 수 있게 된다.BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a cleaning apparatus for a semiconductor process. The present invention relates to a semiconductor processing washing apparatus capable of removing various contaminants generated during a semiconductor device manufacturing process using pure water and nitrogen gas. Characterized in that the cleaning means arranged in both directions. Therefore, it is possible to eliminate congestion during the cleaning process of the wafer, thereby reducing process defects due to the cleaning delay after the metal wiring process. In addition, it is possible to realize space saving and facility efficiency by minimizing the installation space.
Description
제1도는 종래의 반도체 공정용 세척장치를 나타낸 도면이다.1 is a view showing a washing apparatus for a conventional semiconductor process.
제2도는 본 발명에 따른 반도체 공정용 세척장치를 나타낸 도면이다.2 is a view showing a washing apparatus for a semiconductor process according to the present invention.
본 발명은 반도체 공정용 세척장치에 관한 것으로, 특히 반도체 웨이퍼를 순수(deionized water)등을 이용하여 세척하도록 된 반도체 공정용 세척장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor processing cleaning apparatus, and more particularly, to a semiconductor processing cleaning apparatus configured to clean a semiconductor wafer using deionized water or the like.
반도체 소자는 원재료인 Si웨이퍼상에 여러가지의 반도체용 박막을 순차적으로 적층하는 한편, 포토 레지스터(photo resist)를 비롯한 각종의 화학물질들을 이용하여 반도체용 박막을 용도에 맞게 가공하여 제작된다. 구체적인 예로서, 예컨대 산화막을 적층하고 이를 원하는 소정의 형태로 가공하는 공정의 경우에는 먼저 포토 레지스트를 도포하는 단계와, 포트 마스트(photo mask)를 이용하여 포토 레지스트를 선택적으로 감광시키는 단계, 선택적으로 감광된 포토 레지스트를 화학용제인 현상액과 정착액등을 이용하여 현상 및 정착시키는 단계, 현상된 포토 마스크를 식각용액(예를 들어 희석된 HF용액)이나 식각용 가스(예를 들어 CF4가스 등)에 대한 식각 장벽으로 이용하여 산화막을 선택적으로 식각하는 단계, 마지막으로 남아있는 포토 레지스트를 소정의 화학용제를 사용하여 제거하는 단계로 대별할 수 있다.A semiconductor device is manufactured by sequentially stacking various semiconductor thin films on a Si wafer, which is a raw material, and processing a semiconductor thin film by using various chemical substances including photoresist to suit a purpose. As a specific example, for example, in the process of laminating an oxide film and processing the same into a desired shape, first, applying a photoresist, and selectively photosensitive photoresist using a port mask, optionally Developing and fixing the photosensitive photoresist using a chemical solvent, a developer, and a fixing solution, and etching the developed photo mask with an etching solution (for example, diluted HF solution) or an etching gas (for example, CF 4 gas). By selectively etching the oxide film using the etching barrier for, and finally removing the remaining photoresist using a predetermined chemical solvent.
상술한 각 공정단계를 살펴보면, 한 층의 산화막을 원하는 패턴으로 가공하기 위해서 포토 레지스트와 HF용액 등 여러가지의 화학성분을 사용하고 있음을 알 수 있다.Looking at each process step described above, it can be seen that various chemical components such as photoresist and HF solution are used to process one layer of oxide film into a desired pattern.
따라서, 반도체 소자의 제작을 위한 각각의 공정을 수행하는 동안에 웨이퍼에 발생되는 각종 오염원을 효과적으로 제거하기 위한 반도체 공정용 세척장치가 필요하게 된다. 이러한 장치의 하나로서 금속배선의 형성공정후에 잔류하는 금속성분을 세척하기 위한 반도체 공정용 세척장치가 있다. 금속배선의 형성공정에서는 금속배선의 건식식각시에 가스잔류물이나 폴리머(polymer) 성분이 웨이퍼의 표면에 잔존함은 물론 웨이퍼의 뒷면에는 진공 척(chuck)에 의한 오염도 발생된다. 따라서 반도체 공정용 세척장치는 상술한 오염들을 순수를 이용한 순간세척, 질소가스를 이용한 버블 샤워(bubble shower)등을 통하여 효과적으로 제거하게 된다.Therefore, there is a need for a semiconductor process cleaning apparatus for effectively removing various contaminants generated on a wafer during each process for fabricating a semiconductor device. As one of such apparatuses, there is a washing apparatus for a semiconductor process for washing metal components remaining after the forming process of metal wiring. In the metal wiring forming process, gas residues and polymer components remain on the surface of the wafer during dry etching of the metal wiring, as well as contamination by a vacuum chuck on the back surface of the wafer. Therefore, the semiconductor apparatus cleaning apparatus effectively removes the above-mentioned contaminations through instant washing using pure water and a bubble shower using nitrogen gas.
제1도는 상술한 종래의 반도체 공정용 세척장치를 나타낸 도면이다.1 is a view showing a conventional cleaning apparatus for a semiconductor process described above.
제1도를 참조하면, 참조부호 10은 세척공정을 수행할 웨이퍼들을 세척장치에 수동으로 공급하기 위한 로더(loade)부 이고, 11은 큐디알 배쓰(QDR bath)이다. 여기에서 QDR은 Quick Dumped Rinse의 약자로서 상기 큐디알 배쓰(11)에서는 웨이퍼에 대하여 ①순수를 이용한 세척, ②질소가스를 이용한 오버플로우(overflow), ③샤워드레인(shower drain), ④순수를 이용한 재세척, ⑤질소가스를 이용한 오버플로우를 연속적으로 수행하여 웨이퍼 표면의 가스 잔류물이나 폴리머를 비롯하여 웨이퍼 뒷면의 각종 오염들을 제거하게 된다. 한편, 상기 ③의 샤워드레인은 순수를 웨이퍼에 분사하여 상기 ①순수를 이용한 세척단계에서 미처 세척되지 못한 오염을 추가로 제거한 후, 오염물질이 함유된 기존의 순수를 배출하고 새로운 순수를 큐디알 배쓰(11)로 공급하는 작업을 진행하는 것이다.Referring to FIG. 1, reference numeral 10 denotes a loader for manually supplying wafers to be subjected to the cleaning process to the cleaning apparatus, and reference numeral 11 denotes a QDR bath. QDR stands for Quick Dumped Rinse. In QD11, wafers are cleaned with pure water, overflow with nitrogen gas, shower drain, and pure water. Re-washing, and ⑤ overflow with nitrogen gas are continuously performed to remove gas residues and polymers on the wafer surface and other contaminants on the back of the wafer. Meanwhile, the shower drain of ③ is sprayed with pure water on the wafer to further remove the contamination that could not be washed in the washing step using ① pure water, and then discharges the existing pure water containing the contaminants and the new pure water into the DB bath. (11) to proceed with the work to supply.
다음으로, 참조부호 12는 화이널 배쓰(final bath)로서, 여기에서는 상기 큐디알 배쓰(11)를 통과한 웨이퍼에 대하여 최종적인 세척을 행하며, 여기에는 비저항을 감지하기 위한 비저항 셀(cell)이 부착되어 예컨대 배쓰 내의 순수의 비저항이 14MΩ 이상으로 되면 예컨대 부저를 울려서 작업자에게 세척이 완료되었음을 알리게 된다. 또한, 참조부호 13은 작업자가 세척이 완료된 웨이퍼들을 꺼내기 위한 언로더(unloader)부로서, 작업자는 세척이 완료된 웨이퍼들을 수동으로 후술할 스핀 드라이어(spin dryer)로 이동시킨다. 다음으로, 참조부호 14는 스핀 드라이어로서 이는 세척이 완료된 웨이퍼를 건조시켜 다음의 제조공정을 수행할 수 있도록 하는 것이다.Next, reference numeral 12 denotes a final bath, in which a final cleaning of the wafer passing through the QDial bath 11 is performed, and a resistivity cell for detecting a specific resistance is attached thereto. For example, when the specific resistance of pure water in the bath is 14MΩ or more, for example, a buzzer sounds to inform the worker that the cleaning is completed. In addition, reference numeral 13 is an unloader part for the operator to take out the cleaned wafers, and the operator manually moves the cleaned wafers to a spin dryer, which will be described later. Next, reference numeral 14 denotes a spin dryer, which dries the cleaned wafer so that the following manufacturing process can be performed.
그런데, 상술한 바와 같은 종래의 반도체 공정용 세척장치는 단방향으로 세척을 진행하기 때문에 그 처리효율이 낮으며, 이에 따라 반도제 소자 제조공정의 진행시에 처리량의 변화에 대처하기 어려운 문제점이 있다. 이때, 세척 요구량의 증가에 대처하기 위하여 무리하게 세척시간을 단축하는 경우에는 공정불량이 발생되는 어려움이 있다. 더욱이, 반도체 소자의 제조공정은 세척단계를 거친 후에야 다음의 공정을 진행할 수 있는 바, 종래의 장치는 처리 요구량의 증가에 능동적으로 대처할 수 없어 공정의 정체는 물론 제조공정의 진행을 중단시키는 문제점이 발생된다.However, the above-described cleaning apparatus for a semiconductor process according to the related art has a low processing efficiency because the washing process is performed in one direction, and thus there is a problem that it is difficult to cope with a change in throughput during the progress of the semiconductor device manufacturing process. In this case, if the washing time is excessively shortened to cope with the increase in the washing demand, there is a difficulty in generating a process defect. In addition, the semiconductor device manufacturing process can proceed to the next process only after the cleaning step, the conventional device can not actively cope with the increase in the processing requirements, there is a problem of stopping the process of the manufacturing process as well as the stagnation of the process Is generated.
따라서 본 발명의 목적은 상기한 바와 같은 종래기술의 문제점을 해결하기 위하여 반도체 소자 제조공정의 진행시에 세척 처리량의 변화에 능동적으로 대처하기 위하여 종래와는 달리 양방향으로 세척단계를 진행하도록 한 반도체 공정용 세척장치를 제공하는데 있다.Accordingly, an object of the present invention is to perform a cleaning step in both directions unlike the prior art to actively cope with changes in the cleaning throughput during the progress of the semiconductor device manufacturing process in order to solve the problems of the prior art as described above To provide a washing device for.
상기한 목적을 달성하기 위하여 본 발명은, 순수와 질소가스등을 사용하여 반도체 소자의 제조공정중에 발생된 각종의 오염을 제거할 수 있도록 된 반도체 공정용 세척장치에 있어서, 중앙의 작업대를 중심으로 양방향으로 세척수단을 배치한 것을 특징으로 한다.In order to achieve the above object, the present invention, in the semiconductor device cleaning apparatus that can remove the various contamination generated during the manufacturing process of the semiconductor device using pure water and nitrogen gas, etc. It characterized in that the washing means arranged.
이하, 첨부한 도면을 참조하여 본 발명을 설명하기로 한다.Hereinafter, with reference to the accompanying drawings will be described the present invention.
제2도는 본 발명에 따른 반도체 공정용 세척장치를 나타낸 도면으로, 도면에서 상기 제1도와 동일한 구성요소에 대해서는 동일한 참조부호를 부여하는 한편 그 설명은 생략하기로 한다.FIG. 2 is a view illustrating a cleaning apparatus for a semiconductor process according to the present invention, in which the same reference numerals are assigned to the same components as those of FIG. 1, and description thereof will be omitted.
제2도를 참조하면, 참조부호 20은 작업대로서 이는 종래 장치의 로더부(10)와 언로더부(13)를 대신하여 작업자가 웨이퍼를 핸들링(handling)하기 위한 공간이다. 상기 제1도의 종래의 장치를 참조하면, 본 발명에 따른 반도체 공정용 세척장치는 종래의 구성요소인 로더부(10)와 언로더부(13)을 제거하는 한편 이를 간이구조인 상기 작업대(20)로 대치하고, 여분의 공간에 큐디알 배쓰와 화이널 배쓰 및 스핀 드라이어를 추가로 설치하여 동시에 2방향으로 웨이퍼의 세척처리를 행할 수 있도록 구성한 것이다. 즉, 종래에는 로더부에서 세척처리를 대기시킨 후 큐디알 배쓰와 화이널 배쓰 및 스핀 드라이어를 차례로 거치면서 단방향으로만 세척처리가 가능하였지만, 제2도에 도시된 바와 같은 본 발명의 구조에 의하면, 작업대에서 웨이퍼를 대기시킨 후 양방향으로 세척처리를 행함으로써 처리능력이 배가되어 세척 처리량의 증가에 능동적으로 대처할 수 있게 된다. 아울러 설치공간을 최소화할 수 있어, 본 발명에 따른 반도체 공정용 세척장치를 실제 제조라인에 설치하는 경우 기존의 공간에 설치할 수 있는 잇점이 있다.Referring to FIG. 2, reference numeral 20 denotes a work bench, which is a space for a worker to handle a wafer in place of the loader portion 10 and the unloader portion 13 of the conventional apparatus. Referring to the conventional apparatus of FIG. 1, the cleaning apparatus for a semiconductor process according to the present invention removes the loader unit 10 and the unloader unit 13, which are conventional components, while the worktable 20 is a simple structure. ), And additionally, the CUDL bath, final bath, and spin dryer are installed in the extra space so that the wafer can be cleaned in two directions at the same time. That is, in the related art, the washing process was possible only in one direction while waiting for the washing process in the loader unit and then passing through the queue bath, the final bath, and the spin dryer, but according to the structure of the present invention as shown in FIG. By waiting for the wafer at the workbench and performing the cleaning process in both directions, the processing capacity is doubled to actively cope with the increase in the cleaning throughput. In addition, it is possible to minimize the installation space, there is an advantage that can be installed in the existing space when installing the cleaning device for a semiconductor process according to the present invention in the actual manufacturing line.
이상에서 설명한 바와 같이 본 발명에 의하면, 웨이퍼의 세척처리시의 정체를 없앨 수 있으며, 이에 따라 금속배선공정 후의 세척지연에 따른 공정불량을 줄일 수 있게 된다. 또한, 설치공간을 최소화 함으로써 공간절약 및 설비 효율화를 실현할 수 있게 된다.As described above, according to the present invention, congestion during the cleaning process of the wafer can be eliminated, thereby reducing the process defect due to the cleaning delay after the metal wiring process. In addition, it is possible to realize space saving and facility efficiency by minimizing the installation space.
본 발명이 상기 실시예에 한정되지 않으며, 많은 변형이 본 발명의 기술적 사상내에서 당분야에서 통상의 지식을 가진 자에 의하여 가능함은 명백하다.The present invention is not limited to the above embodiments, and it is apparent that many modifications are possible by those skilled in the art within the technical idea of the present invention.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950040262A KR0161449B1 (en) | 1995-11-08 | 1995-11-08 | Cleaning apparatus for semiconductor process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950040262A KR0161449B1 (en) | 1995-11-08 | 1995-11-08 | Cleaning apparatus for semiconductor process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR970030414A KR970030414A (en) | 1997-06-26 |
| KR0161449B1 true KR0161449B1 (en) | 1999-02-01 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019950040262A KR0161449B1 (en) | 1995-11-08 | 1995-11-08 | Cleaning apparatus for semiconductor process |
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| KR (1) | KR0161449B1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20190393079A1 (en) * | 2015-04-15 | 2019-12-26 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating electrode and semiconductor device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20190393079A1 (en) * | 2015-04-15 | 2019-12-26 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating electrode and semiconductor device |
| US11004727B2 (en) * | 2015-04-15 | 2021-05-11 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating electrode and semiconductor device |
| US20210257251A1 (en) * | 2015-04-15 | 2021-08-19 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating electrode and semiconductor device |
| US11791201B2 (en) | 2015-04-15 | 2023-10-17 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating electrode and semiconductor device |
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| KR970030414A (en) | 1997-06-26 |
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