KR0155904B1 - Voltage conversion device of semiconductor - Google Patents

Abstract

The present invention discloses a voltage converting device of a semiconductor chip. The apparatus includes means for generating a constant reference voltage while an external source voltage is supplied, and for generating a first voltage proportional to the reference voltage moved to a predetermined level to move the level of the reference voltage to a predetermined level. A first amplifying means, a first amplifying means for comparing and amplifying the reference voltage with the first voltage, and amplifying the first voltage; and a power supply means for outputting a reference voltage shifted to a level in accordance with the output of the first amplifying means. Comparing the level shifting means with the second voltage and an output voltage of the level shifting means and amplifying the second voltage distribution means for generating a second voltage proportional to the standby voltage. A first driving means having a standby voltage supply means for outputting a standby voltage as an internal source voltage in accordance with the output of the second amplifying means and the second amplifying means; And a second driving means having a third amplifying means for comparing the output of the moving means with an active voltage, and having an active voltage supply means for outputting an active voltage as an internal source voltage according to the output of the third amplifying means. It is characterized in that it is possible to prevent the level change of the internal source voltage due to the low driving current in the standby state.

Description

Voltage converter of semiconductor chip

1 is a configuration diagram of a conventional voltage conversion circuit.

FIG. 2 is a waveform diagram of a signal output through the output terminal OUT shown in FIG.

3 is a configuration diagram of a voltage converter of a semiconductor chip according to the present invention.

4 is a circuit diagram of another embodiment of the voltage conversion device according to the present invention.

5A to 5C are timing diagrams for describing the operation of the apparatus shown in FIGS. 3 and 4.

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a voltage conversion device, and more particularly, to a voltage conversion device of a semiconductor chip for converting a power supply from the outside into a voltage that can be used inside the semiconductor chip.

Voltage conversion circuits are often used to protect internal circuits of semiconductor chips from high voltages input from the outside or to convert them to voltages required by semiconductor chips.

Hereinafter, a configuration and an operation of a conventional voltage conversion circuit will be described as follows with reference to FIGS. 1 and 2.

FIG. 1 is a configuration diagram of a conventional voltage conversion circuit, and includes a reference voltage generator 10, a first amplifier 22 constituting the level shifter 20, a MOS transistor Q1 24, resistors R1 and R2) 26 and 28, the second amplifier 32, the MOS transistor (Q2) 34 and the active mode constituting the first driver 30 for supplying current in the standby mode. A third amplifier 42 and a MOS transistor (Q3) 44 constituting the second driver 40 for supplying time current.

FIG. 2 is a waveform diagram of a signal output through the output terminal InVcc shown in FIG. 1, and the horizontal axis represents an external source voltage ExVcc and the vertical axis represents an internal source voltage InVcc.

As can be seen in FIG. 1, in order to reduce power consumed by the chip, when the chip operation is in a standby state, the first driver 30 is turned on and the second driver 40 is turned off. Thus, the power consumption used in the chip can be reduced. At this time, the current driving capability of the first driver 30 as the standby driver is much smaller than the current driving capability of the second driver 40 as the active driver. If the external source voltage continues to increase, the internal source voltage continues to increase and becomes constant at some point, and the internal source voltage is the same when the operation of the semiconductor chip is in the standby state and the active state. Able to know.

Therefore, when the semiconductor chip is activated from the standby state to the active state, the internal source voltage is lowered by the operating current until the enable signal for driving the second driver 40 is input through the input terminal IN. A problem occurs.

An object of the present invention is to provide a voltage conversion device for a semiconductor chip that maintains a constant level and generates a corresponding internal source voltage when the state of the semiconductor chip is transitioned in order to solve the conventional problems as described above.

In order to achieve the above object, a power conversion device of a semiconductor chip for converting a source voltage according to the present invention includes: voltage generating means for generating a constant reference voltage while an external source voltage is supplied;

First dividing means for generating a first voltage proportional to the reference voltage moved to the first level, and comparing the reference voltage with the first voltage to move the level of the reference voltage to the first level First amplification means for amplifying a result, and first power supply means for outputting a reference voltage shifted to the first level according to the output of the first amplification means; ,

Second dividing means for generating a second voltage proportional to the reference voltage moved to the second level, for moving the level of the reference voltage to a second level, and comparing the reference voltage with the second voltage; And a second amplifying means for amplifying the comparison result, and a second power supply means for outputting a reference voltage shifted to the second level according to the output of the second amplifying means. Means of transportation,

The standby according to the output of the third amplifying means and the third amplifying means which are in an active state while the external source voltage is being supplied and compares the output of the first level shifting means with a standby voltage and amplifies the comparison result. First driving means having a standby voltage supply means for outputting a voltage as an internal source voltage; And

In response to a control signal, the output of the second level shifting means is compared with an active voltage, and the active voltage is output as the internal source voltage according to the output of the fourth amplifying means and the fourth amplifying means. It is preferable that it is composed of a second drive means having an active voltage supply means for supplying a larger current than the first drive means.

EMBODIMENT OF THE INVENTION Hereinafter, with reference to attached drawing, the voltage converting apparatus of the semiconductor chip by this invention is demonstrated as follows.

3 is a configuration diagram of a voltage conversion device of a semiconductor chip according to the present invention, wherein the voltage generator 60 and the reference voltage level for generating a constant reference voltage Vref while an external source voltage ExVcc is supplied. Level moving part 80 for moving the voltage to a predetermined first level, second level moving part 100 for moving the level of the reference voltage to a predetermined second level, and an active state while an external source voltage is supplied. The first drive unit 120 and the second drive unit 140 that can supply a larger current than the first drive unit 120 is composed of.

The first level moving unit 80 compares the reference voltage with the first voltage V1 and moves to the first level according to the output of the first amplifier 82 and the first amplifier 82 which amplifies the comparison result. A first power supply 84 configured to output the reference voltage, a gate connected to the output of the first amplifier 82, a source connected to an external source voltage, and an output of the first level shifter 80. And a MOS transistor T1 having a drain connected thereto, and MOS transistors T2 and T3 constituting a first divider 86 for generating a first voltage V1 proportional to the reference voltage moved to the first level. . The second level shifting unit 100 having the same configuration as the first level shifting unit 80 may include a second amplifier 102 comparing the reference voltage Vref with the second voltage V2 and amplifying the comparison result. A second power supply 104 configured to output a reference voltage shifted to a second level according to the output of the second amplifier 102, a gate connected to the output of the second amplifier 102, an external source voltage, A MOS transistor T4 having a source connected thereto, a drain connected to an output of the second level moving unit 100, and a second component for generating a second voltage V2 proportional to the reference voltage moved to the second level; It consists of MOS transistors T5 and T6 constituting the allocation 106.

The first driver 120 compares the output of the first level shifter 80 with the standby voltage, and a third amplifier 122 for amplifying the comparison result and a MOS transistor T7 for implementing the standby voltage supply unit 124. The second driver 140, which is similar in configuration to the first driver 120 but can supply a larger current than the first driver 120, is configured to respond to a control signal of the second level mover 100. A fourth amplifier 142 for comparing the output with an active voltage and amplifying the comparison result, and an active voltage supply unit 144 for outputting an active voltage as an internal source voltage according to the output of the fourth amplifier 142. It consists of a MOS transistor T8.

The first and second dividers 86 and 106 are implemented as a plurality of transistors connected in series by a diode connection between the output of the first level shifter 80 and the reference potential, as shown in FIG. It can be implemented with multiple resistors connected in series between them.

The standby voltage supply unit 124 may be implemented as a MOS transistor having a gate connected to the output of the third amplifier 122, a source connected to an external source voltage, and a drain connected to the standby voltage. 144 has a gate connected to the output of the fourth amplifier 142, a source connected to an external source voltage, a drain connected to an active voltage, and larger than the MOS transistor T7 implementing the standby voltage supply unit 124. It is implemented with a MOS transistor with a transistor width.

The voltage generator 60 of the voltage converting circuit of the semiconductor chip according to the present invention shown in FIG. 3 generates a constant reference voltage Vref according to the external source voltage ExVcc to generate the first and second level shifters. 80 and 100). The output voltage Vrefs output from the first power supply unit 84 of the first level moving unit 80 to the first driving unit 120 is represented by the following equation (1).

---- (One)

Here, R2 and R3 represent the on resistances of the MOS transistors T2 and T3.

That is, as shown in equation (1), the first divider 86 outputs the first voltage V1 proportional to the output voltage Vrefs to the first amplifier 82 as a resistance ratio. The second distributor 106 has the same configuration as the first distributor 86, and outputs the output voltages Vrefs to the second driver 140 as shown in Equation (2).

----(2)

Here, R5 and R6 represent the on resistances of the MOS transistors T5 and T6.

The first driver 120 maintains an active state while the external source voltage ExVcc is input, and outputs the voltage Vrefs to the output terminal InVcc as the internal source voltage InVcc, which is a standby voltage. In this standby state, it is a voltage for supplying a predetermined small current to the chip.

When the control signal C1 is input through the input terminal IN of the second driver 140 so that the device generates an active voltage for the active operation of the semiconductor chip, the second driver 140 is a second level mover. Input the voltage Vrefa output from the 100 and output the internal source voltage through the output terminal InVcc. In this case, the MOS transistor T8 has a larger transistor width than the MOS transistor T7, so that more current can be supplied into the semiconductor chip.

As a result, a high level control signal is input to the input terminal IN when the semiconductor chip is in an operation standby state, and the second driver 140 is turned off to output Vrefs as an internal source voltage. When the semiconductor chip is in an operating state, a low level control signal is input. The input terminal IN is input, and the second driver 140 is turned on to output Vrefa as an internal source voltage.

4 is a circuit diagram of another embodiment of the voltage converting apparatus according to the present invention, wherein the voltage generator 60 for generating a constant reference voltage Vref while the external source voltage ExVcc is supplied is provided. In order to move to a predetermined level, the first distribution unit 166 for generating a first voltage proportional to the reference voltage moved to the predetermined level, and the first voltage comparing the reference voltage with the first voltage and amplifying the comparison result. A level shifter 160 having an amplifier 162 and a power supply 164 for outputting a reference voltage shifted to a level in accordance with the output of the first amplifier 162, while an external source voltage is being supplied; And a second divider 186 generating a second voltage proportional to the standby voltage, and a second amplifier 182 comparing the output of the level shifter 160 with the second voltage and amplifying the comparison result. And the standby voltage according to the output of the second amplifier 162 The first driver 200 having the standby voltage supply unit 184 outputting the control signal and the third amplifier 202 comparing the output of the level shifting unit 160 with an active voltage in response to a control signal and amplifying the comparison result. And a second driver 180 having an active voltage supply unit 204 for outputting an active voltage as an internal source voltage according to the output of the third amplifier 202.

The power supply unit 164 shown in FIG. 4 has the same function or configuration as the first or second power supply unit 84 or 104 shown in FIG. That is, the MOSFET may have a gate connected to the output of the first amplifier 162, a source connected to the external source voltage ExVcc, and a drain connected to the output of the level shifter 160. In addition, the first or second distributors 166 and 186 may be implemented with a plurality of transistors connected in series in a diagrammatic manner, such as the dividers 86 or 106 shown in FIG. It can also be implemented with multiple resistors that are connected.

The standby voltage supply unit 184 includes an MOS transistor having a gate connected to the output of the second amplifier 182, a source connected to an external source voltage, and a drain connected to a standby voltage. 204 has a gate connected to the output of the third amplifier 202, a source connected to an external source voltage, a drain connected to an active voltage, and a standby voltage supply unit for supplying more current to the semiconductor chip. MOS transistors having a width larger than that of 184 transistors.

According to another exemplary embodiment of the voltage converting apparatus according to the present invention shown in FIG. 4, when the semiconductor chip is in the standby state, the first driving unit 200 is turned off by inputting a high level control signal through the input terminal IN. Through InVcc, Vrefs such as the following equation (3) output from the level shifting unit 160 are output. However, when the semiconductor chip is in an operating state, a low level control signal is input to turn on the first driving unit 200, and Vrefa is output through the output terminal InVcc as shown in Equation (4).

---- (3)

----(4)

Here, R10, R11, R13 and R14 represent the on resistances of the MOS transistors T10, T11, T13 and T14.

That is, in the voltage converting device shown in FIG. 4, the voltages of the formula (4) output from the level shifting unit 160 are input to the first and second driving units 200 and 180, respectively, so that the resistance ratios of R10 and R11 are obtained. And the voltage ratio of Eq. (3) is the internal source voltage when the semiconductor chip is in the standby state, and the voltage of Eq. (4) is the internal source voltage when the semiconductor chip is in the operating state. Is output.

5a to 5c are timing diagrams for explaining the operation of the apparatus shown in FIGS. 3 and 4, and FIG. 5a is a timing diagram of a control signal input through the input terminal IN in FIGS. FIG. 3 is a timing diagram of a signal A and a reference voltage B output through the output terminal InVcc in FIGS. 3 and 4, and FIG. 5c is a timing diagram of an external source voltage.

The external source voltage shown in FIG. 5C increases with time, and a constant Vref voltage is output at time t1. When the control signal transitions from the high level to the low level at time t2, the internal source voltage output from the output terminal InVcc shown in FIGS. 3 and 4 is voltage-strengthened and output from Vrefs to Vrefa, so that a large amount of current passes through the output terminal. Is fed into the interior.

As described above, the voltage converting apparatus according to the present invention can change the potential of the internal source voltage at the standby operation and the potential of the internal source voltage at the active time differently from the standby state to the active state. When the level of the internal source voltage is changed and outputted, there is an effect of preventing the level change of the internal source voltage due to the low driving current in the standby state.

Claims (2)

A power conversion device for converting a source voltage, comprising: voltage generating means for generating a constant reference voltage while an external source voltage is supplied; First dividing means for generating a first voltage proportional to the reference voltage shifted to the first level to move the level of the reference voltage to a first level, and comparing the reference voltage with the first voltage And a first amplifying means for amplifying the comparison result, and a first power supply means for outputting a reference voltage shifted to the first level according to the output of the first amplifying means. transportation; Second dividing means for generating a second voltage proportional to the reference voltage moved to the second level, for moving the level of the reference voltage to a second level, and comparing the reference voltage with the second voltage; And a second amplifying means for amplifying the comparison result, and a second power supply means for outputting a reference voltage shifted to the second level according to the output of the second amplifying means. transportation; The standby according to the output of the third amplifying means and the third amplifying means which are in an active state while the external source voltage is being supplied and compares the output of the first level shifting means with a standby voltage and amplifies the comparison result. First driving means having a standby voltage supply means for outputting a voltage as an internal source voltage; And comparing the output of the second level shifting means with an active voltage in response to a control signal, and converting the active voltage into the internal source voltage according to the output of the fourth amplifying means and the fourth amplifying means. And a second driving means capable of supplying a larger current than said first driving means. A power conversion device for converting a source voltage, comprising: voltage generating means for generating a constant reference voltage while an external source voltage is supplied; First dividing means for generating a first voltage proportional to the reference voltage moved to the predetermined level, for moving the level of the reference voltage to a predetermined level, and comparing the reference voltage to the first voltage, A first amplifier means for amplifying the comparison result, and a power supply means for outputting a reference voltage shifted to the level according to the output of the first amplifier means; Second distribution means which is in an active state while the external source voltage is supplied and generates a second voltage proportional to a standby voltage, and compares the output of the level shifting means with the second voltage and amplifies the comparison result. First driving means having a standby voltage supply means for outputting the standby voltage as the internal source voltage in accordance with the output of the second amplifying means and the second amplifying means; And comparing the output of the level shifting means with an active voltage in response to a control signal, and outputting the active voltage to the internal source voltage according to the output of the third amplifying means and the third amplifying means. And a second driving means having an active voltage supply means.