KR0150668B1 - Fabricating method of a semiconductor device - Google Patents
Fabricating method of a semiconductor device Download PDFInfo
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- KR0150668B1 KR0150668B1 KR1019940021992A KR19940021992A KR0150668B1 KR 0150668 B1 KR0150668 B1 KR 0150668B1 KR 1019940021992 A KR1019940021992 A KR 1019940021992A KR 19940021992 A KR19940021992 A KR 19940021992A KR 0150668 B1 KR0150668 B1 KR 0150668B1
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Abstract
본 발명은 반도체 소자 제조방법에 관한 것으로, 필드 산화막 형성시 마스크층으로 사용된 질화막 및 폴리실리콘층의 제거공정을 단순화하기 위하여 질화막 제거후 피란하(piranha), 암모니아(Ammonia) 및 HF를 순차적으로 사용하여 세정(cleaning)하므로써 공정을 단순화시키고 오염을 방지하여 소자의 특성 및 수율을 향상시킬 수 있도록 한 반도체 소자 제조방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device, and in order to simplify the removal process of the nitride film and the polysilicon layer used as a mask layer when forming a field oxide film, the pyranha, ammonia and HF are sequentially removed after the nitride film is removed. The present invention relates to a method for fabricating a semiconductor device, which can simplify the process and prevent contamination by improving the properties and yield of the device by cleaning.
Description
제1a 내지 제1d도는 반도체 소자 제조방법을 설명하기 위한 소자의 단면도.1A to 1D are cross-sectional views of a device for explaining a method of manufacturing a semiconductor device.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : 실리콘 기판 2 : 패드 산화막1 silicon substrate 2 pad oxide film
3 : 폴리실리콘층 4 : 질화막3: polysilicon layer 4: nitride film
5 : 감광막 6 : 희생 산화막5: photosensitive film 6: sacrificial oxide film
7 : 필드 산화막7: field oxide film
본 발명은 반도체 소자 제조방법에 관한 것으로, 특히 필드 산화막 형성시 마스크층(Mask Layer)으로 사용된 질화막 및 폴리실리콘층을 제거하기 위하여 질화막 제거후 피란하(piranha), 암모니아(Ammonia) 및 HF를 순차적으로 사용하여 세정(cleaning)하므로써 공정을 단순화시키고 오염을 방지하여 소자의 특성 및 수율을 향상시킬 수 있도록 한 반도체 소자 제조방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device. In particular, in order to remove a nitride film and a polysilicon layer used as a mask layer when forming a field oxide film, pyranha, ammonia, and HF may be removed after removal of the nitride film. The present invention relates to a method for fabricating a semiconductor device, which can be used to sequentially clean and thereby simplify the process and prevent contamination, thereby improving the characteristics and yield of the device.
종래 반도체 소자 제조방법은 제1a도에 도시된 바와같이 실리콘 기판(1)상에 패드 산화막(2), 폴리실리콘층(3), 질화막(4) 및 감광막(5)을 순차적으로 형성한 후 상기 감광막(5)을 패터닝하고 제1b도와 같이 상기 질화막(4), 폴리실리콘층(3) 및 패드 산화막(2)을 순차적으로 식각하여 상기 실리콘 기판(1)의 소자분리영역을 노출시킨 다음 상기 감광막(5)을 제거하고 산화공정을 진행하여 제1c도에 도시된 바와같이 필드 산화막(7)을 형성한 후 상기 산화공정시 마스크층으로 사용된 상기 질화막(4), 폴리실리콘층(3) 및 패드 산화막(2)을 제거하고 후속 소자제조공정을 실시하기전에 상기 실리콘 기판(1)상에 제1d도와 같이 희생 산화막(6)을 형성시키는데, 상기 마스크층(4, 3 및 2)의 제거공정을 상세히 설명하면 다음과 같다.In the conventional method of manufacturing a semiconductor device, as shown in FIG. 1A, the pad oxide film 2, the polysilicon layer 3, the nitride film 4, and the photosensitive film 5 are sequentially formed on the silicon substrate 1, and then the The photosensitive film 5 is patterned and the nitride film 4, the polysilicon layer 3, and the pad oxide film 2 are sequentially etched to expose the device isolation region of the silicon substrate 1, as shown in FIG. (5) is removed and the oxidation process is performed to form the field oxide film 7 as shown in FIG. 1C, and the nitride film 4, the polysilicon layer 3, and the like used as a mask layer during the oxidation process; The sacrificial oxide film 6 is formed on the silicon substrate 1 as shown in FIG. 1d before the pad oxide film 2 is removed and the subsequent device fabrication process is performed. The mask layers 4, 3, and 2 are removed. When described in detail as follows.
필드 산화막(7)이 형성된 실리콘 기판(1)에 잔류되는 마스크층(4, 3 및 2)을 제거시키기 위해 먼저 BOE(Buffered Oxide Etchant)용액에 디핑(diping)하여 필드 산화막(7) 형성시 질화막(4) 상부에 생성되어 인산처리시 상기 질화막(4)의 제거를 방해하는 산화막(도시안됨)을 제거하고 인산을 사용하여 상기 질화막(4)을 제거시킨 다음 50:1의 HF 및 피란하 용액을 순차적으로 사용하여 세정하는데, 상기 50:1의 HF 용액은 질화막(4) 제거시 인산의 불균일한 식각반응 또는 폴리실리콘층(3) 표면에 잔류되는 반응 부산물이 폴리실리콘층 제거시 장벽(Barrier) 역할을 하여 폴리실리콘이 잔류되는 것을 방지하기 위해 사용하며, 상기 피란한(H2SO4+ H2O2)용액은 상기 HF 용액 사용후 발생되는 워터 마크(Water Mark)를 방지하기 위해 사용한다. 이후 상기 폴리실리콘층(3)을 Cl2또는 SF6-베어(Bare)를 사용하여 건식식각(Dry etch)한 후 잔류되는 폴리머(polymer)를 50:1의 BOE 용액에 10초 동안 디핑하여 제거시킨다. 그런데 이와같은 마스크층 제거공정은 세정 횟수가 많아 실리콘 기판의 오염 및 파손 가능성이 높고, 암모니아 세정액에 실리콘 기판이 노출되는 경우 소자의 특성이 불안정해진다.In order to remove the mask layers 4, 3, and 2 remaining on the silicon substrate 1 on which the field oxide film 7 is formed, first, a nitride film is formed by dipping in a buffered oxide etchant (BOE) solution. (4) remove the oxide film (not shown) that is formed on the top and interferes with the removal of the nitride film 4 during phosphoric acid treatment, and removes the nitride film 4 using phosphoric acid, and then removes 50: 1 HF and piranha solution. In order to clean the 50: 1 HF solution. The 50: 1 HF solution is a non-uniform etching reaction of phosphoric acid when the nitride film 4 is removed or a reaction by-product remaining on the surface of the polysilicon layer 3 when the polysilicon layer is removed. It is used to prevent polysilicon from remaining, and the pyran (H 2 SO 4 + H 2 O 2 ) solution is used to prevent the water mark generated after using the HF solution. do. Thereafter, the polysilicon layer 3 is dry etched using Cl 2 or SF 6 -bare (Bare), and the remaining polymer is removed by dipping in a 50: 1 BOE solution for 10 seconds. . However, such a mask layer removal process has a high number of cleaning times, which is likely to cause contamination and breakage of the silicon substrate. When the silicon substrate is exposed to the ammonia cleaning liquid, the characteristics of the device become unstable.
따라서 본 발명은 질화막 제거후 피란하(piranha), 암모니아(Ammonia) 및 HF를 순차적으로 사용하여 세정(cleaning)하므로써 상기한 단점을 해소할 수 있는 반도체 소자 제조방법을 제공하는데 그 목적이 있다.Accordingly, an object of the present invention is to provide a method of manufacturing a semiconductor device which can solve the above disadvantages by sequentially cleaning the nitride film after removing the pyranha, ammonia, and HF.
상기한 목적을 달성하기 위한 본 발명은 필드 산화막 형성시 질화막 상부에 형성된 산화막을 제거시키는 단계와, 질화막을 제거시킨 후 피란하, 암모니아 및 HF 용액을 순차적으로 사용하여 세정시키는 단계로 이루어지는 것을 특징으로 한다.The present invention for achieving the above object comprises the step of removing the oxide film formed on top of the nitride film during the formation of the field oxide film, and after the nitride film is removed using a piranha, ammonia and HF solution sequentially do.
이하, 첨부된 도면을 재참조하여 본 발명을 상세히 설명하기로 한다.Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.
본 발명에 따른 반도체 소자 제조방법은 상기와 같이 제1a 내지 제1c도를 거쳐 필드 산화막(7)이 형성된 실리콘 기판(1)의 상부에 잔류되는 마스크층(4, 3 및 2)을 제거하기 위해 BOE 용액에 디핑하여 필드 산화막(7) 형성시 질화막(4) 상부에 생성되어 인산처리시 상기 질화막(4)의 제거를 방해하는 산화막을 제거하고 인산을 사용하여 상기 질화막(4)을 제거시킨 다음 피란하, 암모니아(NH4OH) 및 50:1의 HF 용액을 순차적으로 사용하여 세정하는데, 상기 암모니아 용액은 그 조성비가 NH4OH : H2O2: H2O = 1 : 1 : 5가 되도록 한다. 이러한 조성비로 제조된 암모니아 용액은 알칼리성 식각용액으로 작용하는데 약 85℃에서 실리콘(silicon)에 대하여 10Å/분의 식각비(Etch rate) 특성을 가지며, 폴리실리콘에 대해서는 30~40Å/분의 식각비 특성을 갖고 있다. 따라서 상술한 세정 공정을 약 85℃에서 진행함으로써, 기판의 세정과 동시에 폴리실리콘층이 식각되어 제거되도록 할 수 있다. 이때 폴리실리콘층이 형성된 두께에 비례하여 위와 같은 식각비로 완전히 제거되도록 충분한 시간동안 세정 공정을 실시한다.The semiconductor device manufacturing method according to the present invention is to remove the mask layer (4, 3 and 2) remaining on the upper portion of the silicon substrate (1) on which the field oxide film 7 is formed through the first through 1c as described above Dipping in the BOE solution to form the field oxide film (7) formed on top of the nitride film (4) to remove the oxide film that interferes with the removal of the nitride film (4) during phosphoric acid treatment, and remove the nitride film (4) using phosphoric acid Under piranha, ammonia (NH 4 OH) and 50: 1 HF solution were washed sequentially, and the ammonia solution had a composition ratio of NH 4 OH: H 2 O 2 : H 2 O = 1: 1: 5 Be sure to The ammonia solution prepared at such a composition ratio acts as an alkaline etching solution and has an etching rate of 10 μs / min for silicon at about 85 ° C. and an etching rate of 30 to 40 μm / min for polysilicon. Has characteristics. Accordingly, by performing the above-described cleaning process at about 85 ° C., the polysilicon layer may be etched and removed at the same time as the substrate is cleaned. At this time, the cleaning process is performed for a sufficient time so that the polysilicon layer is completely removed by the above etching ratio in proportion to the thickness of the polysilicon layer.
따라서 폴리실리콘층의 제거를 위한 별도의 식각 공정없이 필드산화막 형성을 위한 마스크층을 제거할 수 있다.Therefore, the mask layer for forming the field oxide layer may be removed without an additional etching process for removing the polysilicon layer.
상술한 바와같이 본 발명에 의하면 공정의 단순화로 실리콘 기판의 오염 및 파손의 가능성을 크게 감소시켜 생산수율을 증대시키며 게이트 산화막의 특성을 향상시킬 수 있는 탁월한 효과가 있다.As described above, according to the present invention, there is an excellent effect of greatly reducing the possibility of contamination and breakage of the silicon substrate by simplification of the process, thereby increasing the production yield and improving the characteristics of the gate oxide film.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019940021992A KR0150668B1 (en) | 1994-09-01 | 1994-09-01 | Fabricating method of a semiconductor device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019940021992A KR0150668B1 (en) | 1994-09-01 | 1994-09-01 | Fabricating method of a semiconductor device |
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| KR0150668B1 true KR0150668B1 (en) | 1998-12-01 |
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| KR1019940021992A KR0150668B1 (en) | 1994-09-01 | 1994-09-01 | Fabricating method of a semiconductor device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100443521B1 (en) * | 1996-10-30 | 2004-10-14 | 주식회사 하이닉스반도체 | Method for manufacturing a semiconductor device |
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1994
- 1994-09-01 KR KR1019940021992A patent/KR0150668B1/en not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100443521B1 (en) * | 1996-10-30 | 2004-10-14 | 주식회사 하이닉스반도체 | Method for manufacturing a semiconductor device |
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