KR0144091B1 - Coating apparatus of semiconductor - Google Patents

Coating apparatus of semiconductor

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Publication number
KR0144091B1
KR0144091B1 KR1019940040417A KR19940040417A KR0144091B1 KR 0144091 B1 KR0144091 B1 KR 0144091B1 KR 1019940040417 A KR1019940040417 A KR 1019940040417A KR 19940040417 A KR19940040417 A KR 19940040417A KR 0144091 B1 KR0144091 B1 KR 0144091B1
Authority
KR
South Korea
Prior art keywords
mixture
plasma
generating means
adhesive
semiconductor
Prior art date
Application number
KR1019940040417A
Other languages
Korean (ko)
Other versions
KR960023198A (en
Inventor
노길섭
Original Assignee
김주용
현대전자산업주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 김주용, 현대전자산업주식회사 filed Critical 김주용
Priority to KR1019940040417A priority Critical patent/KR0144091B1/en
Publication of KR960023198A publication Critical patent/KR960023198A/en
Application granted granted Critical
Publication of KR0144091B1 publication Critical patent/KR0144091B1/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
    • C23C4/134—Plasma spraying
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
    • B05B7/16—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed
    • B05B7/22—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed electrically, magnetically or electromagnetically, e.g. by arc
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/01—Selective coating, e.g. pattern coating, without pre-treatment of the material to be coated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings

Abstract

본 발명은 반도체 도금장치에 관한 것으로, 특히, 강한 플라즈마를 발생시키는 플라즈마 발생수단(1)과, 프레이팅 파우더와 접착제가 혼합되어 채워진 믹스탱크(2)와, 상기 플라즈마 발생수단(1)에서 발생된 강한 플라즈마에 의해 상기 믹스탱크(2)에서 공급되는 혼합물을 분사하는 멀티핀노즐(3)과, 상기 멀티핀노즐(3)에서 분사되는 혼합물을 몰디드 리드 프레임(5)의 몰딩부(9)가 형성된 곳을 제외하고, 분사되는 혼합물을 통과시키기 위한 구멍이 형서된 마스크(4)를 포함하여 구성됨을 특징으로 하며, 이러한 본 발명은, 특히, 접착제와 프레이팅 파우더의 혼합물을 플라즈마를 이용하여 분사시킴으로써, 이물질을 쉽게 제거하고, 도금 두께를 일정하게 유지함과 동시에 도금의 불량을 감소시키며, 또한 공정수를 줄이고 생산성을 향상시키는 효과가 있는 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor plating apparatus, and more particularly, to a plasma generating means (1) for generating a strong plasma, a mix tank (2) filled with a mixture of a frying powder and an adhesive, and the plasma generating means (1). The multi-pin nozzle (3) for injecting the mixture supplied from the mix tank (2) by the strong plasma, and the mixture of the multi-pin nozzle (3) for molding the molded part (9) of the molded lead frame (5) And a mask (4) in which a hole for passing the mixture to be injected is formed, except where a) is formed, and the present invention, in particular, uses a plasma for the mixture of the adhesive and the frying powder. By spraying, it is easy to remove foreign substances, keep the thickness of coating at the same time, reduce the defect of plating, and also reduce the number of processes and improve productivity. will be.

Description

반도체 도금장치Semiconductor Plating Equipment

제1도는 본 발명 반도체 도금장치의 개략도,1 is a schematic view of a semiconductor plating apparatus of the present invention,

제2도는 마스크(mask)를 몰디드 리드프레임에 씌운 상태의 평면도이다.2 is a plan view showing a mask on a molded lead frame.

*도면의 주요 부분에 대한 부호의 설명* Explanation of symbols for the main parts of the drawings

1 : 플라즈마(plasma) 발생수단1 plasma generating means

2 : 믹스탱크(mix tank)2: mix tank

3 : 멀티핀노즐(multi pin nozzle)3: multi pin nozzle

4 : 마스크(mask)4: mask

5 : 몰디드 리드프레임(molded lead frame)5: molded lead frame

6 : 내부리드(inner lead) 7 : 댐바(dam bar)6: inner lead 7: dam bar

8 : 외부리드(outer lead) 9 : 몰딩부8: outer lead 9: molding part

본 발명은 반도체 도금장치에 관한 것으로, 특히, 프레이팅 파우더(주로 납가루)와 접착제가 혼합된 혼합물을 플라즈마 발생수단에서 발생되는 플라즈마를 이용하여 멀티핀노즐을 통해 분사하는 반도체 도금장체에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor plating apparatus, and more particularly, to a semiconductor plating body for spraying a mixture of framing powder (mainly lead powder) and an adhesive through a multi-fin nozzle using plasma generated from a plasma generating means. .

일반적으로 반도체 패키지는 리드프레임에 칩을 어태치(attach)하고, 와이어본딩 후에 몰딩하여 도금 및 성형시켜 제조한다.In general, a semiconductor package is manufactured by attaching a chip to a lead frame, and molding and plating and molding the wire after bonding.

몰딩공정 후 도금 및 성형을 위해서는 다음과 같은 전처리 과정이 필요하다. 즉, 내부리드(6)와 외부리드(8)를 연결하는 댐바(7)를 절단하는 트림(trim)을 실시하고, 이물질 제거를 위한 디프레시(deflash)를 행한 후 프레이팅 공정을 통해 납도금을 한다음 외부리드(8)를 성형한다.For plating and molding after molding process, the following pretreatment process is required. That is, a trim is performed to cut the dam bar 7 connecting the inner lead 6 and the outer lead 8, deflashed to remove foreign substances, and then lead plating through a frying process. Then, the outer lead 8 is molded.

이때의 디프레시 과정은 화학적 디프레시를 수행한 후 건식 또는 습식 디프레시를 수행한다. 즉 트림한 몰디드 리드프레임을 95~100℃에서 엠-피롤(M-PYROL)과 염산, 황산의 혼합액에 30분간 침지시켜 화학적 디프레시를 완료한다. 이 과정은 이물질과 혼합액간의 화학반응을 통해 기름기 등의 이물질을 제거하기 위한 것이나, 몰드수지 내부에 혼합액이 침투하여 칩에 데미지(damage)를 일으킬수 있다.In this case, the defresh process is performed after the chemical defresh and the dry or wet defresh. That is, the trimmed lead frame is immersed in a mixed solution of M-PYROL, hydrochloric acid, and sulfuric acid for 30 minutes at 95 to 100 ° C to complete chemical defresh. This process is to remove foreign substances such as oil through chemical reaction between foreign substances and mixed liquid, but the mixed liquid can penetrate inside mold resin and cause damage to chips.

또한, 화학적 디프레시 후에는 습식 또는 건식 디프레시를 거치게 되는데, 습식 디프레시는 압력을 가함으로써 물과 함게 파우더상의 연마제(abrasive)를 제공하여 이물질을 제거하는 것이고, 건식 디프레시는 물 대신 공기를 사용하여 이물질을 제거하는 것이다.In addition, after chemical dehydration, wet or dry dehydration is performed. The wet depressurization is to provide a powdery abrasive with water to remove foreign substances, and dry depressurization removes air instead of water. To remove foreign substances.

그러나 상기와 같은 경우, 결국 화학적 디프레시와 건식(또는 습식) 디프레시를 연속하여 수행하게 됨으로써, 일정한 두께의 도금이 이루어지기 어렵고, 또한 공정수가 증가됨에 따른 제조원가가 상승되어 생산성이 떨어지는 문제점이 있었다.However, in the above case, the chemical defresh and dry (or wet) depressing are carried out continuously, so that plating of a certain thickness is difficult to perform, and the manufacturing cost increases due to the increase in the number of processes, resulting in a problem of low productivity. .

본 발명의 목적은, 상기와 같은 종래의 문제점을 해소하기 위한 것으로, 특히, 플라즈마 발생수단을 이용하여 접착제와 프레이팅 파우더의 혼합물을 멀티핀노즐로 함께 분사시킴으로써, 몰디드 리드 프레임의 이물질 제거와 도금을 동시에 수행하도록 하는 반도체 도금장치를 제공하는데 있다.SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned conventional problems, and in particular, by spraying a mixture of an adhesive and a fretting powder together with a multi-pin nozzle using a plasma generating means, removing foreign substances from the molded lead frame. The present invention provides a semiconductor plating apparatus for performing plating at the same time.

상기와 같은 목적을 달성하기 위해 본 발명 반도체 도금장치는, 강한 플라즈마를 발생시키는 플라즈마 발생수단과; 프레이팅 파우더와 접착제가 혼합되어 채워진 믹스탱크와; 상기 플라즈마 발생수단에서 발생딘 강한 플라즈마에 의해 상기 믹스탱크에서 공급되는 혼합물을 분사하는 멀티핀노즐과; 상기 멀티핀노즐에서 분사되는 혼합물을 몰디드 리드 프레임의 몰딩부가 형성된 곳을 제외하고, 분사되는 혼합물을 통과시키기 위한 구멍이 형성된 마스크를 포함하여 구성됨을 그 기술적 구성상의 특징으로 한다.In order to achieve the above object, the present invention provides a semiconductor plating apparatus comprising: plasma generating means for generating a strong plasma; A mixing tank filled with a mixing powder and an adhesive; A multi-pin nozzle for injecting the mixture supplied from the mix tank by the strong plasma generated by the plasma generating means; Technical features of the present invention include a mask having a hole for passing the mixture to be injected, except where the molded part of the molded lead frame is formed.

이하, 상기와 같이 구성된 본 발명 반도체 도금장치의 기술적 사상에 따른 일 실시예를 들어 그 구성 및 동작을 첨부된 도면에 의거 상세히 설명하면 다음과 같다.Hereinafter, with reference to the accompanying drawings, the configuration and operation of the embodiment according to the technical idea of the present invention the semiconductor plating apparatus configured as described above in detail as follows.

제 1 도는 본 발명 반도체 도금장치의 개략도이고, 제 2 도는 마스크를 몰디드 리드 프레임에 씌운 상태의 평면도이다.FIG. 1 is a schematic view of the semiconductor plating apparatus of the present invention, and FIG. 2 is a plan view of a mask covered with a molded lead frame.

먼저, 믹스탱크(2)에는 도금을 위한 프레이팅 파우더와 접착제의 믹싱(mixing)상태의 혼합물로 채우고, 플라즈마 발생수단(1)에서 발생한 플라즈마가 이 믹스탱크(2) 입구를 경유케하여 형성된 혼합분사물을 몰디드 리드 프레임(5)상에 분사시키는 구조로 이루어진다.First, the mix tank 2 is filled with a mixture of a mixing powder of a powder and an adhesive for plating, and a plasma generated by the plasma generating means 1 is made to pass through the inlet of the mix tank 2. It consists of a structure which injects an injection object on the molded lead frame 5.

상기 플라즈마 발생수단(1)은 전력에 의해 가속화된 전자가 가스분자와 탄성충돌을 거쳐 고에너지를 얻고, 다음에 가스분자와 비탄성 충돌하여 전리 및 여기되어 플라즈마를 발생케하는데, 이렇게 형성된 강한 프라즈마는 상기 믹스탱크(2)의 입구를 경유하게 되는데, 속도가 빠르크로 압력이 상대적으로 낮아져 상기 믹스탱크(2)의 내용물이 상기 플라즈마 발생수단(1)에서 발생된 플라즈마와 함께 멀티핀노즐(3)을 통해 분사된다. 이 혼합분사기체를 멀티핀노즐(3)로 분사시킬 때, 마스크(4)를 통하게 함이 요구되는바, 마스크(4)는 몰디드 리드 프레임의 몰딩부(9)는 막히고, 리드 부분은 구멍이 뚫린 형상이므로 몰딩부(9)를 보호하는 역할을 한다. 이렇게 혼합분사기체를 분사시키면 강한 플라즈마에 의해 기름기 등의 리드상 이물질이 쉽게 제거됨과 동시에 프레이팅 파우더가 리드에 코팅된다.The plasma generating means 1 obtains high energy through the gas molecules and elastic collisions by the electric power, and then ionically and excited by inelastic collision with the gas molecules to generate plasma. Through the inlet of the mix tank 2, the speed is relatively low, the pressure is relatively low so that the contents of the mix tank 2 together with the plasma generated by the plasma generating means (1) multi-pin nozzle (3) Sprayed through. When the mixed spraying gas is injected into the multi-pin nozzle 3, it is required to pass through the mask 4, so that the mask 4 blocks the molding part 9 of the molded lead frame and the lead part is a hole. Since it is a perforated shape, it serves to protect the molding part 9. When the mixed spraying gas is sprayed, the lead-like foreign substances such as oil are easily removed by the strong plasma, and at the same time, the coating powder is coated on the lead.

이상에서 살펴본 바와 같이 본 발명은, 특히, 접착제와 프레이팅 파우더의 혼합물을 플라즈마를 이용하여 분사시킴으로써, 이물질을 쉽게 제거하고, 도금두께를 일정하게 유지함과 동시에 도금의 불량을 감소시키며, 또한 공정수를 줄이고 생산성을 향상시키는 효과가 있는 것이다.As described above, the present invention, in particular, by spraying the mixture of the adhesive and the fretting powder using plasma, it is easy to remove the foreign matter, while maintaining a constant plating thickness and at the same time reducing the defect of the plating, To reduce productivity and increase productivity.

Claims (1)

강한 플라즈마를 발생시키는 플라즈마 발생수단(1)과; 프레이팅 파우더와 접착제가 혼합되어 채워진 믹스탱크(2); 상기 플라즈마 발생수단(1)에서 발생된 강한 플라즈마에 의해 상기 믹스탱크(2)에서 공급되는 혼합물을 분사하는 멀티핀노즐(3)과; 상기 멀티핀노즐(3)에서 분사되는 혼합물을 몰디드 리드 프레임(5)의 몰딩부(9)가 형성된 곳을 제외하고, 분사되는 혼합물을 통과시키기 위한 구멍이 형성된 마스크(4)를 포함하여 구성됨을 특징으로 하는 반도체 도금장치.Plasma generating means (1) for generating a strong plasma; A mixing tank (2) filled with a mixing powder and an adhesive; A multi-fin nozzle (3) for injecting the mixture supplied from the mix tank (2) by the strong plasma generated by the plasma generating means (1); Except where the molding part 9 of the molded lead frame 5 is formed, the mixture sprayed from the multi-fin nozzle 3 includes a mask 4 having a hole for passing the sprayed mixture. Semiconductor plating apparatus characterized in that.
KR1019940040417A 1994-12-31 1994-12-31 Coating apparatus of semiconductor KR0144091B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940040417A KR0144091B1 (en) 1994-12-31 1994-12-31 Coating apparatus of semiconductor

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Application Number Priority Date Filing Date Title
KR1019940040417A KR0144091B1 (en) 1994-12-31 1994-12-31 Coating apparatus of semiconductor

Publications (2)

Publication Number Publication Date
KR960023198A KR960023198A (en) 1996-07-18
KR0144091B1 true KR0144091B1 (en) 1998-08-17

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