KR0139723B1 - Passivation method of gaas<100>surface - Google Patents
Passivation method of gaas<100>surfaceInfo
- Publication number
- KR0139723B1 KR0139723B1 KR1019940032652A KR19940032652A KR0139723B1 KR 0139723 B1 KR0139723 B1 KR 0139723B1 KR 1019940032652 A KR1019940032652 A KR 1019940032652A KR 19940032652 A KR19940032652 A KR 19940032652A KR 0139723 B1 KR0139723 B1 KR 0139723B1
- Authority
- KR
- South Korea
- Prior art keywords
- gaas100
- gaas
- solution
- sulfur
- distilled water
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 14
- 238000002161 passivation Methods 0.000 title 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 4
- 238000005530 etching Methods 0.000 claims abstract description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
- 239000012153 distilled water Substances 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 239000000243 solution Substances 0.000 claims 2
- 238000001035 drying Methods 0.000 claims 1
- 239000011259 mixed solution Substances 0.000 claims 1
- 229910052717 sulfur Inorganic materials 0.000 abstract description 6
- 239000011593 sulfur Substances 0.000 abstract description 6
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 abstract description 5
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 238000004381 surface treatment Methods 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- BTYUGHWCEFRRRF-UHFFFAOYSA-N [As].[K] Chemical compound [As].[K] BTYUGHWCEFRRRF-UHFFFAOYSA-N 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- -1 sulfur ions Chemical class 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30612—Etching of AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
본 발명은 칼륨비소(GaAs)를 실리콘(Si)과 같이 초고집적도를 갖는 소자의 제작에 응용할 수 있도록 하기 위한 중요한 요소인 표면 경면처리를 행함에 있어 용액을 사용하여 평평한 표면을 유지할 수 있는 방법에 대한 것이다. 식각과 유황에 의한 표면처리를 거치는 동안 물과 표면의 화학반응, 유황처리 시간들을 최적화 함으로써 표면이 나노미터급(nanometer-scale)의 평평도를 갖도록 하는 방법을 제안하였다.The present invention relates to a method that can maintain a flat surface using a solution in the surface mirror treatment, which is an important factor for the application of potassium arsenic (GaAs) in the fabrication of ultra-high density devices such as silicon (Si) It is about. During etching and surface treatment by sulfur, we propose a method to make nanometer-scale flatness by optimizing water and surface chemical reaction and sulfur treatment time.
Description
본 발명은 소자의 소형화를 위해 필수적인 표면의 평탄성을 극대화하면서 표면이 산소와 결합하지 못하도록 표면을 경면처리 하는 방법에 관한 것이다. Si과 달리 GaAs는 공기중의 산소와의 결합으로 인해 여러 가지 전기적 광학적 특성이 나빠져서 소자의 제작에 어려움이 있다. 이러한 단점을 극복하기 위해서 유황으로 표면을 처리하는 방법들이 많이 사용되어 왔으나, 소자의 소형화에 결정적인 역할을 하게 될 표면의 평탄성을 높이려는 노력은 체계적으로 진행되지 않았다.The present invention relates to a method of mirror-treating the surface to prevent the surface from bonding with oxygen while maximizing the flatness of the surface essential for miniaturization of the device. Unlike Si, GaAs is difficult to fabricate devices due to the deterioration of various electrical and optical properties due to bonding with oxygen in the air. In order to overcome this disadvantage, many methods of treating the surface with sulfur have been used, but efforts to increase the surface flatness, which will play a decisive role in miniaturization of the device, have not been systematically performed.
본 발명은 표면의 화학반응, 특히 물과 GaAs100 표면과의 화학반응을 근거로 하여 최적화된 GaAs100 표면의 유황처리 방법을 제공하는 데 목적이 있다.It is an object of the present invention to provide an optimized method for treating sulfur on a GaAs100 surface based on chemical reactions on the surface, in particular water and GaAs100 surfaces.
본 발명에 따른 GaAs100의 표면을 경면처리 하는 과정을 설명하면 아래와 같다.Referring to the process of mirror-processing the surface of the GaAs100 according to the present invention.
1. GaAs100 표면에 두껍게 덮여있는 산화막의 제거를 위해 상온의 황산:과산화수소:증류수(=7:1:1) 용액에 약 30초간 식각한다.1. Etch for 30 seconds in a sulfuric acid: hydrogen peroxide: distilled water (= 7: 1: 1) solution at room temperature to remove the oxide film on the GaAs100 surface.
2. 식각후 즉시 유황이온이 과도하게 포함되어 있는 (NH4)2SX용액에 넣는다. 약 20분 후에 꺼낸다.2. Immediately after etching, add to sulfuric acid (NH 4 ) 2 S X solution. Take it out after about 20 minutes.
3. 증류수로 약 10분간 헹군다.3. Rinse with distilled water for about 10 minutes.
4. 건조 질소로 물기를 없앤다.4. Dry off with dry nitrogen.
과정 1후에 과정 2로 가는 도중 증류수로 세척하거나 공기중에 노출하는 것을 방지하므로써 GaAs100 표면에서 산화막의 (segregation)을 막을 수 있으므로 표면의 거칠기를 최소화할 수 있다. 과정 2에서 (NH4)2SX용액에 담구어 너무 긴 시간동안 처리하지 않는 이유는 용액속의 유황이온들이 GaAs100 표면을 시간이 지남에 따라 식각할 수 있기 때문에 그에 따른 표면의 거칠기가 증가할 수 있는 원인을 제거할 수 있다. 과정 3에서 증류수로 충분히 헹구므로써 표면에 과도하게 쌓여 있을 무정형의 유황층과 SOX층을 제거하여 표면을 평평하게 할 수 있다. 이런 과정을 거친 후 표면의 평평도는 거칠기(peak to valley)의 값이 ±6Å 정도로 용액을 이용한 표면처리 후에도 나노미터급(nanometer-scale)의 평평도를 얻을 수 있음을 보여주었으며, 이는 실제로 미세선폭을 갖는 패턴 제작에 이용될 수 있다.After the process 1 to prevent the process of washing with distilled water or exposure to the air on the way to the process 2 to prevent the segregation of the oxide film on the surface of the GaAs100 can minimize the surface roughness. The reason for not soaking in (NH 4 ) 2 S X solution in the process 2 for too long time is that the sulfur ions in the solution may etch the GaAs100 surface over time, thereby increasing the surface roughness. You can eliminate the cause. Process can flatten the surface by removing the amorphous layer of sulfur and SO X meurosseo layer be sufficiently rinsed with distilled water in a 3 stacked on the surface excessively. After this process, the surface flatness showed that the nanometer-scale flatness can be obtained even after the surface treatment using the solution with a peak to valley value of ± 6 valley. It can be used to produce a pattern having a line width.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019940032652A KR0139723B1 (en) | 1994-12-03 | 1994-12-03 | Passivation method of gaas<100>surface |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019940032652A KR0139723B1 (en) | 1994-12-03 | 1994-12-03 | Passivation method of gaas<100>surface |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR960026307A KR960026307A (en) | 1996-07-22 |
| KR0139723B1 true KR0139723B1 (en) | 1998-07-15 |
Family
ID=19400212
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019940032652A KR0139723B1 (en) | 1994-12-03 | 1994-12-03 | Passivation method of gaas<100>surface |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR0139723B1 (en) |
-
1994
- 1994-12-03 KR KR1019940032652A patent/KR0139723B1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR960026307A (en) | 1996-07-22 |
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Payment date: 20030226 Year of fee payment: 6 |
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