KR0131920Y1 - Residual treatment devices of c.r.t - Google Patents
Residual treatment devices of c.r.t Download PDFInfo
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- KR0131920Y1 KR0131920Y1 KR2019940025935U KR19940025935U KR0131920Y1 KR 0131920 Y1 KR0131920 Y1 KR 0131920Y1 KR 2019940025935 U KR2019940025935 U KR 2019940025935U KR 19940025935 U KR19940025935 U KR 19940025935U KR 0131920 Y1 KR0131920 Y1 KR 0131920Y1
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- South Korea
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- high frequency
- cathode ray
- ray tube
- electrodes
- frequency coil
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/38—Exhausting, degassing, filling, or cleaning vessels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2209/00—Apparatus and processes for manufacture of discharge tubes
- H01J2209/01—Generalised techniques
- H01J2209/017—Cleaning
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Manufacture Of Electron Tubes, Discharge Lamp Vessels, Lead-In Wires, And The Like (AREA)
Abstract
본 고안은 음극선관의 개선된 이물처리 장치를 개시한다.The present invention discloses an improved foreign material treatment apparatus for a cathode ray tube.
종래에는 고주파 코일로 해당전극을 유도가열함으로써 이물을 소각하였는바, 인접전극들이 열손상되는 문제가 있었다.In the past, the foreign material was incinerated by induction heating of the corresponding electrode with a high frequency coil, and thus there was a problem that adjacent electrodes were thermally damaged.
본 고안에서는 고주파 코일을 마그네트로 감싸주어 인접전극으로 향하는 고주파를 차폐시킴으로써 이들이 열손상을 방지하였다.In the present invention, by shielding the high frequency coil with a magnet to shield the high frequency toward the adjacent electrode they prevented thermal damage.
Description
제1도는 종래의 이물처리 장치를 보이는 블럭도.1 is a block diagram showing a conventional foreign material processing apparatus.
제2도는 본 고안에 의한 이물처리 장치를 보이는 블럭도이다.2 is a block diagram showing a foreign material treatment apparatus according to the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
T : 음극선관(cathode ray tube) D : 고주파 처리헤드T: cathode ray tube D: high frequency treatment head
G1~G4 : (전자총의) 전극 RF : 고주파 발진장치G1 ~ G4: (electron gun) electrode RF: high frequency oscillator
RC : 고주파 코일 M : 마그네트(magnet)RC: High Frequency Coil M: Magnet
본 고안은 음극선관(陰極線管) 제조에 관한 것으로, 더 상세히는 관내이물(管內異物)을 처리하는 장치에 관한 것이다.The present invention relates to the production of cathode ray tubes, and more particularly, to an apparatus for treating an alien substance in a tube.
음극선관의 제조과정은 형광체와 흑연막 그리고 메탈백(metal back)등의 각종 기능막들의 성막(成膜) 과정이므로 그 관내에는 이들 기능막들이 이탈된 조각과 먼지등의 이물이 존재하기 쉽다. 그런데 음극선관은 전자빔(electron beam)의 형성 및 가속을 위해 수십 KV의 고전압을 사용하므로, 방전이나 이상발광등 여러가지 고전압 현상이 발생하게 된다.Since the manufacturing process of the cathode ray tube is a process of forming various functional films such as a phosphor, a graphite film, and a metal back, foreign substances such as pieces and dust from which these functional films have been removed are likely to exist in the tube. However, since the cathode ray tube uses a high voltage of several tens of KV for forming and accelerating an electron beam, various high voltage phenomena such as discharge or abnormal emission occur.
스트레이 에미션(stray emission; SE)은 이러한 이상발광의 일종으로 형광체 조각등이 전자총의 전극 사이에 존재하는 경우 음극선관에 전압을 인가하면 발광되어 화상의 품위를 저하시키는 것이다. 이에따라 음극선관의 정특성 검사과정에서 SE등이 불량이 발생된 음극선관을 취출하여 오염이 쉬운 G1, G2 전극의 이물을 제거하고 있 다.Stray emission (SE) is a kind of abnormal light emission. When a phosphor fragment or the like is present between the electrodes of an electron gun, it emits light when a voltage is applied to the cathode ray tube, thereby degrading the image quality. Accordingly, in the process of inspecting the positive characteristics of cathode ray tubes, SE cathodes are taken out to remove foreign substances from G1 and G2 electrodes that are easily contaminated.
제1도에는 이러한 종래의 이물처리 장치를 도시하였다.1 shows such a conventional foreign matter treatment apparatus.
이것은 음극선관(T)을 지지하는 홀더(holder; H)와, 음극선관(T)의 G1, G2 전극(G1, G2)을 지향하는 고주파 코일(RC)을 구비하는 고주파 처리헤드(D)와, 이 고주파 코일(RC)에 고주파를 공급하는 고주파 발진장치(RF)를 구비하여, G1, G2전극(G1, G2)을 외부에서 유도가열함으로써 이들에 부착된 이물을 소각시켰다.This includes a high frequency processing head D having a holder H for supporting the cathode ray tube T, and a high frequency coil RC for directing the G1 and G2 electrodes G1 and G2 of the cathode ray tube T; And a high frequency oscillation device RF for supplying a high frequency to the high frequency coil RC, and induction heating of the G1 and G2 electrodes G1 and G2 from outside to incinerate the foreign matter adhered thereto.
그런데 이러한 종래의 이물처리 장치는 G1, G2 전극(G1, G2)을 외부에서 유도가열 하는 것이므로 이들에 인접한 G3, G4전극(G3, G4)이나 캐소드(cathode; K)가 고주파 코일(RC)에서 발생되는 고열(통상 600~700℃)에 의해 열손상될 우려가 매우 많았으며, 이에따라 전자총의 내전압 특성에 악영향을 끼치는 문제가 있었다.However, since the conventional foreign material processing apparatus induction heating the G1, G2 electrodes (G1, G2) from the outside, adjacent G3, G4 electrodes (G3, G4) or cathode (K) in the high frequency coil (RC) There was a high possibility of thermal damage due to the generated high heat (usually 600 ~ 700 ℃), accordingly had a problem that adversely affect the withstand voltage characteristics of the electron gun.
본 고안의 목적은 상술한 종래의 문제점을 감안하여 고주파 코일에 의해 인접한 다른 전극들이 열손상되는 것을 방지할 수 있는 음극선관의 이물처리 장치를 제공하는 것이다.It is an object of the present invention to provide a foreign material processing apparatus of a cathode ray tube that can prevent other adjacent electrodes from being thermally damaged by a high frequency coil in view of the above-described conventional problems.
이와같은 목적을 달성하기 위해 본 고안에 의한 음극선관의 이물처리 장치는, 음극선관을 지지하는 홀더와, 음극선관의 소정전극들을 지향하여 유도 가열하는 고주파 코일을 구비하는 음극선관의 이물처리 장치에 있어서, 고주파 코일에 이를 감싸는 마그네트가 구비되는 것을 특징으로 한다.In order to achieve the above object, the foreign material processing apparatus of a cathode ray tube according to the present invention is a foreign material processing apparatus of a cathode ray tube having a holder for supporting a cathode ray tube and a high frequency coil for induction heating directed to predetermined electrodes of the cathode ray tube. In the high frequency coil, it is characterized in that the magnet is provided.
이에따라 본 고안은, 고주파가 마그네트에 의해 차폐되므로 인접 전극들의 열손상을 방지하여 전자총의 내전압 특성저하를 방지하게 된다.Accordingly, the present invention, since the high frequency is shielded by the magnet to prevent thermal damage of the adjacent electrodes to prevent the withstand voltage characteristics of the electron gun.
이하 첨부된 도면을 참조하여 본 고안의 한 바람직한 실시예를 상세히 설명한다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.
제2도에서, 본 고안에 의한 음극선관의 이물처리 장치는 고주파를 발생시키는 고주파 발진장치(RF)와, 이에 의해 음극선관(T)의 소정전극, 예컨대 G1, G2전극(G1, G2)을 유도가열하는 고주파 처리헤드(D)를 구비한다.In FIG. 2, the foreign material processing apparatus of a cathode ray tube according to the present invention is a high frequency oscillation apparatus RF for generating a high frequency, and thereby a predetermined electrode of the cathode ray tube T, for example, G1, G2 electrodes G1, G2. Induction heating is provided with a high frequency processing head (D).
고주파 처리헤드(D)는 음극선관(T)을 지지하는 홀더(H)와, 해당전극(G1, G2)들을 지향하며 고주파 발진장치(RF)에 연결된 고주파 코일(RC)로 구성된다. 본 고안의 특징에 따라 고주파 코일(RC)에는 마그네트(magner; M)가 이를 감싸도록 설치된다. 이 마그네트(M)는 고주파 코일(RC)의 외곽전체를 감싸도록 설치될 수도 있으나, 바람직하기로 도시된 바와같이 고주파 코일(RC)의 상,하부만을 감싸도록 설치된다.The high frequency treatment head D includes a holder H for supporting the cathode ray tube T, and a high frequency coil RC directed to the corresponding electrodes G1 and G2 and connected to the high frequency oscillation device RF. According to a feature of the present invention, a magnet (M) is installed on the high frequency coil RC to surround it. The magnet M may be installed to surround the entire outer periphery of the high frequency coil RC, but is preferably installed to surround only the upper and lower portions of the high frequency coil RC.
이와같은 본 고안 이물처리 장치의 작용은 다음과 같다.The action of the present foreign matter treatment apparatus as follows.
먼저 도시되지 않은 정특성 검사과정에서 G1, G2 전극(G1, G2)이 SE불량으로 판정되면, 그 음극선관(T)을 이송하여 고주파 처리헤드(D)의 홀더(H)에 거치한다. 다음 고주파 발진장치(RF)를 작동시켜 고주파 코일(RC)로 해당전극, 즉 G1, G2전극(G1, G2)을 외부에서 유도가열한다. 그러면 이들에 부착된 이물이 유도가열에 의해 소각되는데, 이때 인정함 G3,G4 전극(G3, G4)이나 캐소드(K)는 본 고안 마그네트(M)에 의해 고주파가 적절히 차폐되므로 종래와 같이 고주파에 의한 열손상이 효과적으로 방지된다.First, when the G1 and G2 electrodes G1 and G2 are determined to be SE defective in the static characteristic inspection process (not shown), the cathode ray tube T is transferred and mounted on the holder H of the high frequency treatment head D. Next, the high frequency oscillator RF is operated to inductively heat the corresponding electrodes, that is, the G1 and G2 electrodes G1 and G2 with the high frequency coil RC. Then, foreign matters attached to them are incinerated by induction heating. At this time, the G3 and G4 electrodes G3 and G4 or the cathode K are properly shielded by the magnet M of the present invention. Thermal damage is effectively prevented.
또한 마그네트(M)에 의해 차폐된 고주파가 해당전극(G1, G2)들에 집중하게 되어 부착된 이물이 신속히 소각되게 된다.In addition, the high frequency shielded by the magnet (M) is concentrated on the electrodes (G1, G2), the foreign matter attached is quickly incinerated.
이와같이 본 고안에 의하면, 유도가열되는 전극에 인접한 다른 전극들이 열손상 되는 것을 효과적으로 방지할 수 있으며, 해당전극에 고주파가 집중되므로 종래에 비해 이물처리 효과가 우수하다.Thus, according to the present invention, it is possible to effectively prevent the thermal damage of the other electrodes adjacent to the electrode to be induction heating, and because the high frequency is concentrated on the electrode, the foreign matter treatment effect is superior to the conventional.
따라서 본 고안은, 전자총의 내전압 특성불량 감소와 음극선관의 생산성 향상등에 효과가 있다.Therefore, the present invention is effective in reducing the breakdown voltage characteristic of the electron gun and improving the productivity of the cathode ray tube.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019940025935U KR0131920Y1 (en) | 1994-09-30 | 1994-09-30 | Residual treatment devices of c.r.t |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019940025935U KR0131920Y1 (en) | 1994-09-30 | 1994-09-30 | Residual treatment devices of c.r.t |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR960012379U KR960012379U (en) | 1996-04-17 |
| KR0131920Y1 true KR0131920Y1 (en) | 1998-12-01 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR2019940025935U KR0131920Y1 (en) | 1994-09-30 | 1994-09-30 | Residual treatment devices of c.r.t |
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| Country | Link |
|---|---|
| KR (1) | KR0131920Y1 (en) |
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1994
- 1994-09-30 KR KR2019940025935U patent/KR0131920Y1/en not_active IP Right Cessation
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| Publication number | Publication date |
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| KR960012379U (en) | 1996-04-17 |
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