KR0127362Y1 - Chamber condition measuring apparatus for dry-etching equipment - Google Patents
Chamber condition measuring apparatus for dry-etching equipment Download PDFInfo
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- KR0127362Y1 KR0127362Y1 KR2019920025935U KR920025935U KR0127362Y1 KR 0127362 Y1 KR0127362 Y1 KR 0127362Y1 KR 2019920025935 U KR2019920025935 U KR 2019920025935U KR 920025935 U KR920025935 U KR 920025935U KR 0127362 Y1 KR0127362 Y1 KR 0127362Y1
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- chamber
- impedance
- measuring apparatus
- dry
- chamber condition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
본 고안은 RF임피던스를 측정하여 챔버 콘디션을 측정할수 있는 드라이 에칭 장비의 챔버 콘디션 측정장치에 관한것으로 RF파우어를 발생시키는 RF파우어 발생기(1), 챔버내의 임피던스 변화신호를 센싱하는 임피던스 센서(2), 전극(3)(4)사이에 플라즈마가 형성되어 웨이퍼를 에칭시키는 공정을 수행하는 챔버(5), 임피던스 센서(2)에 접속되어 챔버 콘디션을 측정하는 측정기(6)를 포함하여서 이루어진다.The present invention relates to a chamber condition measuring apparatus of a dry etching equipment that can measure chamber impedance by measuring RF impedance. And a chamber 5 in which a plasma is formed between the electrodes 3 and 4 to perform the process of etching the wafer, and a measuring device 6 connected to the impedance sensor 2 to measure the chamber condition.
Description
제1도는 본고안의 챔버 콘디션 측정장치 구성도.1 is a block diagram of a chamber condition measuring apparatus of the present invention.
제2도는 본고안의 임피던스 센서와 측정기의 실시예를 나타낸 회로도.2 is a circuit diagram showing an embodiment of an impedance sensor and a measuring instrument in this article.
제3도는 본고안에 따른 플로우 챠트.3 is a flow chart according to the present proposal.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : RF파우어 발생기 2 : 임피던스 센서1: RF power generator 2: Impedance sensor
3,4 : 전극 5 : 챔버3,4 electrode 5: chamber
6 : 측정기 7 : 앰프6: measuring instrument 7: amplifier
8 : A/D변환기 9 : MPU8: A / D converter 9: MPU
10 : 스위치 11 : 디스플레이부10 switch 11 display unit
본 고안은 반도체 제조 장치인 드라이 에칭장비의 챔버 콘디션(Chamber condition)측정장치에 관한것으로 특히 RF임피던스를 측정하여 콘디션을 파악할 수 있도록 한것이다.The present invention relates to a chamber condition measuring apparatus of a dry etching apparatus, which is a semiconductor manufacturing apparatus, and specifically to measure the condition by measuring the RF impedance.
종래에는 드라이 에칭장비의 챔버 콘디션 측정장치가 없어 장비 이상시 장비의 어딘가에 문제가 있다고 추정할 수 밖에 없었다.Conventionally, since there is no chamber condition measuring device of dry etching equipment, there is no choice but to assume that there is a problem somewhere in the equipment when the equipment is abnormal.
본 고안은 이와같은 종래의 결점을 감안하여 안출한것으로 챔버 콘디션 변화시 RF임피던스가 가장 민감하다는 원리를 이용하여 챔버 콘디션을 용이하게 측정할 수 있게 한 장치를 제공하는데 그 목적이 있다.The present invention has been made in view of the above-mentioned shortcomings, and an object thereof is to provide an apparatus capable of easily measuring chamber conditions by using the principle that RF impedance is most sensitive when changing chamber conditions.
제1도는 본고안의 챔버 콘디션 측정을 위한 장치의 구성도로 RF파우어를 발생시키는 RF파우어 발생기(1)와, 임피던스 변화신호를 센싱하는 임피던스 센서(2)와, 전극(3)(4)사이에 플라즈마가 형성되어 웨이퍼를 에칭시키는 공정을 수행하는 챔버(5)와, 임피던스 센서(2)에 접속되어 챔버 콘디션을 측정하는 측정기(6)로 이루어진다.FIG. 1 is a schematic diagram of a device for measuring chamber conditions in the present invention. An RF power generator 1 for generating an RF power, an impedance sensor 2 for sensing an impedance change signal, and a plasma between the electrodes 3 and 4 are shown in FIG. Is formed, and the chamber 5 which performs the process of etching a wafer, and the measuring device 6 which is connected to the impedance sensor 2 and measures chamber conditions.
제2도는 제1도에서 임피던스 센서(2)와 측정기(6)의 실시예를 상세하게 나타낸 것으로 저항(R1)(R2), 콘덴서(C1~C3), 다이오드(D), 코일(L)로 임피던스 센서(2)를 구성하고, 앰프(7), A/D변환기(8), MPU(9), 스위치(10), 디스플레이부(11)로 측정기(6)를 구성한것이다.FIG. 2 is a detailed view of an embodiment of the impedance sensor 2 and the meter 6 in FIG. 1. The resistors R 1 , R 2 , capacitors C 1 to C 3 , diodes D and coils The impedance sensor 2 is constituted by (L), and the measuring instrument 6 is configured by the amplifier 7, the A / D converter 8, the MPU 9, the switch 10, and the display unit 11.
이와같이 구성된 본고안은 RF파우어 발생기(1)에서 RF파우어가 발생하면 동축케이블과 임피던스 센서(2)를 지나 챔버(5)내의 전극(3)에서 인가되고, 반대편 전극(4)은 그라운드되어 전극(3)(4)사이의 공정조건(진공, 가스, 온도, RF)에 따라 플라즈마가 형성된다.In this configuration, when the RF power is generated in the RF power generator 1, the coaxial cable and the impedance sensor 2 are applied to the electrode 3 in the chamber 5, and the opposite electrode 4 is grounded to form an electrode ( 3) Plasma is formed according to the process conditions (vacuum, gas, temperature, RF) between (4).
따라서, 웨이퍼(12)가공이 진행되는데 이때 챔버(4)내의 정상적인 상태가 50Ω이고 공정조건인 진공도, 가스량, 온도, 전극의 상태등에 따라 ±n% 변화가 발생한다.Therefore, the wafer 12 is processed, and at this time, the normal state in the chamber 4 is 50 Ω, and a change of ± n% occurs depending on the process conditions such as vacuum degree, gas amount, temperature, and electrode state.
이 ±n%의 변화가 챔버 콘디션 변화이며 콘디션 변화가 심하면 웨이퍼 가공에 큰 영향을 미친다.This ± n% change is a change in chamber condition and a significant change in condition has a significant effect on wafer processing.
이러한 임피던스 변화가 임피던스 센서(2)에서 50Ω±n%변화가 생기면 RF동축 케이블에 반사파가 발생되어 이를 앰프(7)를 통해 증폭하고 A/D변화기(8)를 통해 디지탈신호로 만들어 MPU(9)에 전달한다.If this impedance change is 50Ω ± n% change in the impedance sensor (2), the reflected wave is generated in the RF coaxial cable and amplified by the amplifier (7) and made into a digital signal through the A / D converter (8). To pass).
따라서, MPU(9)에서는 제3도와같은 플로우 챠트를 따라 스위치에 미리설정된 입력조건(전압크기, 증폭도, 시간축)에 의해 입력신호를 분석하여 MAX, NIN평균, 표준편차등의 변화량을 계산, 가공한 데이타를 자체 디스플레이부(11)를 통해 표시하거나 또는 외부통신용인 RS 232C로 PC드에 데이타를 전송하여 분석가능하도록 한다.Therefore, the MPU 9 analyzes the input signal according to the input conditions (voltage magnitude, amplification degree, time axis) preset in the switch according to the flow chart as shown in FIG. 3 to calculate the change amount of MAX, NIN average, standard deviation, etc. The processed data can be displayed on its own display unit 11 or transmitted to a PC for analysis via RS 232C for external communication.
이상과 같은 본 고안을 기준의 구성에 간단한 BNC콘넥터를 접속시켜 공정 특성 변화, 즉 챔버 콘디션 변화를 측정할수 있어 결국 안정된 웨이퍼 가공을 실시할수 있는 효과가 있다.By connecting a simple BNC connector to the configuration of the present invention as described above, it is possible to measure a change in process characteristics, that is, a chamber condition, and thus, there is an effect of performing stable wafer processing.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019920025935U KR0127362Y1 (en) | 1992-12-21 | 1992-12-21 | Chamber condition measuring apparatus for dry-etching equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019920025935U KR0127362Y1 (en) | 1992-12-21 | 1992-12-21 | Chamber condition measuring apparatus for dry-etching equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR940017868U KR940017868U (en) | 1994-07-28 |
| KR0127362Y1 true KR0127362Y1 (en) | 1998-12-01 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR2019920025935U KR0127362Y1 (en) | 1992-12-21 | 1992-12-21 | Chamber condition measuring apparatus for dry-etching equipment |
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| Country | Link |
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| KR (1) | KR0127362Y1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100636052B1 (en) * | 2000-08-28 | 2006-10-18 | 삼성전자주식회사 | Apparatus for measuring a load of a plasma chamber |
-
1992
- 1992-12-21 KR KR2019920025935U patent/KR0127362Y1/en not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100636052B1 (en) * | 2000-08-28 | 2006-10-18 | 삼성전자주식회사 | Apparatus for measuring a load of a plasma chamber |
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| Publication number | Publication date |
|---|---|
| KR940017868U (en) | 1994-07-28 |
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