KR0122309Y1 - Device for controlling pressure and temperature of wafer - Google Patents
Device for controlling pressure and temperature of waferInfo
- Publication number
- KR0122309Y1 KR0122309Y1 KR2019950002661U KR19950002661U KR0122309Y1 KR 0122309 Y1 KR0122309 Y1 KR 0122309Y1 KR 2019950002661 U KR2019950002661 U KR 2019950002661U KR 19950002661 U KR19950002661 U KR 19950002661U KR 0122309 Y1 KR0122309 Y1 KR 0122309Y1
- Authority
- KR
- South Korea
- Prior art keywords
- pressure
- temperature
- pump
- amount
- deposition
- Prior art date
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
Abstract
본 고안은 웨이퍼 증착기의 압력 및 온도 조절장치에 관한 것으로, 공정 챔버(1)와, 상기 챔버(1)를 진공 감압하기 위한 펌프(3)와, 압력을 검지하기 위한 압력조절수단과, 펌프(3)의 온도를 조절할 수 있는 온도 조절수단으로 구성 되어 있으며, 상기 압력조절수단은 압력센서(PG,PG1,PG2)의 압력을 검지하고, 소음기(3a)후단의 배관라인에 부착된 증착검지센서(10)에 의해 파우더의 증착을 검지하는 제어부(11)와, 상기 제어부(11)에 검지되는 압력에 따라 펌프(3)에 N2량을 조절하여 퍼지하는 유량제어기(12)로 구성되어 있고, 상기 온도조절수단은 펌프(3)의 외부면에 부착되어 온도를 측정하기 위한 열전대(20)와, 펌프(3)의 온도를 콘트롤 하기 위한 온도 콘트롤러(21)와, 상기 온도 콘트롤러(21)에 의해 냉각수 량이 조절되는 피에조밸브(22)로 구성되어 있어, 펌프에 퍼지되는 N2량이 유량제어기에 설정된 상,하한 값을 벗어날 경우 장비를 멈추고 정비하여 불시에 다운 되는 것을 방지하고, 펌프의 온도를 민감하게 제어하여 펌프내의 파우더 증착을 억제할 수 있는 것이다.The present invention relates to a pressure and temperature control apparatus of a wafer evaporator, and includes a process chamber 1, a pump 3 for vacuum depressurizing the chamber 1, a pressure regulating means for detecting pressure, and a pump ( It consists of a temperature control means that can adjust the temperature of 3), the pressure control means detects the pressure of the pressure sensors (PG, PG1, PG2), the deposition detection sensor attached to the pipe line after the silencer (3a) (10) a control unit 11 for detecting the deposition of powder and a flow controller 12 for adjusting and purging the N 2 amount in the pump 3 according to the pressure detected by the control unit 11, The temperature control means is attached to the outer surface of the pump 3, the thermocouple 20 for measuring the temperature, the temperature controller 21 for controlling the temperature of the pump 3, and the temperature controller 21 It consists of a piezo valve 22 which is controlled by the amount of cooling water, When the amount of N 2 purged exceeds the upper and lower limit values set in the flow controller, the equipment is stopped and maintained to prevent accidental down, and the temperature of the pump is sensitively controlled to suppress powder deposition in the pump.
Description
제1도는 종래 웨이퍼 증착기의 압력 및 온도 조절장치의 구성을 보인 구성도.1 is a block diagram showing the configuration of a pressure and temperature control device of a conventional wafer deposition machine.
제2도는 본 고안 웨이퍼 증착기의 압력 및 온도 조절장치의 구성을 보인 구성도.Figure 2 is a block diagram showing the configuration of the pressure and temperature control device of the wafer evaporator of the present invention.
*도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1:챔버 3:펌프1: chamber 3: pump
3a:소음기 10:증착검지센서3a: Silencer 10: Deposition detection sensor
11:제어부 12:유량제어기11: control unit 12: flow controller
20:열전대 21:온도 콘트롤러20: thermocouple 21: temperature controller
22:피에조밸브22: piezo valve
본 고안은 웨이퍼 증착기의 압력 및 온도 조절장치에 관한 것으로, 특히 반응부산물이 장비에 부착하여 압력 및 온도가 변화하는 사항을 감지하여 장비의 정비 시점을 정확히 예측함으로써 장비가 불시에 멈추는데 따른 손실을 방지할 수 있는 웨이퍼 증착기의 압력 및 온도 조절장치에 관한 것이다.The present invention relates to a pressure and temperature control device for a wafer evaporator. In particular, the reaction by-products are attached to the equipment to detect changes in pressure and temperature, thereby accurately predicting the maintenance time of the equipment, thereby reducing the loss caused by the equipment stopping unexpectedly. It relates to a pressure and temperature control device of the wafer depositor that can be prevented.
일반적으로 웨이퍼 증착은 증착기에 암모니아 가스와 다이크로 싸이렌가스(D.C.S)를 투입하여 웨이퍼에 질화막(Si2N4)을 증착시키는 공정이다.In general, wafer deposition is a process in which a nitride film (Si 2 N 4 ) is deposited on a wafer by injecting ammonia gas and dichrostyrene gas (DCS) into the evaporator.
상기한 바와 같은 일반적으로 웨이퍼 증착공정에 사용되는 종래 웨이퍼 증착기의 압력 및 온도 조절장치가 제1도에 도시되어 있는 바, 이를 간단히 살펴 보면 다음과 같다.The pressure and temperature control apparatus of the conventional wafer deposition machine generally used in the wafer deposition process as described above is shown in FIG.
도시한 바와 같이, 종래의 웨이퍼 증착기는 공정 챔버(1)와, 공정챔버(1)의 압력을 조절하기 위한 자동압력조절밸브('APC밸브'라고도 함)(2)와, 상기 챔버(1) 내부의 압력을 펌핑하여 감압하기 위한 4개의 스테이지로 되어 있는 펌프(3)와, 상기 펌프(3)내에 장착되어 있는 탄소봉(A)에 감지되는 기화압에 의해 펌프(3)내의 냉각수 흐름을 조절하는 썸머스틱밸브(TCV)(4)와, 상기 펌프(3)의 외벽온도의 과온을 감지하는 표면온도 감지센서(TSW)(5)와, 상기 펌프(3)에 각각의 솔레노이드밸브(SV1,SV2,SV3,SV4)를 통하여 퍼지(Purge)되는 N2가스를 일정량 흐르도록 조절하는 플로우미터(6) 및 상기 펌프(3)에서 배기되는 가스의 압력상태를 측정하는 안전장치인 압력스위치(7)로 구성되어 있다.As shown, a conventional wafer deposition machine includes a process chamber 1, an automatic pressure regulating valve (also referred to as an 'APC valve') 2 for adjusting the pressure of the process chamber 1, and the chamber 1 The coolant flow in the pump 3 is regulated by a pump 3 having four stages for reducing the pressure by pumping the internal pressure and the vaporization pressure sensed by the carbon rod A mounted in the pump 3. The thermostatic valve (TCV) (4), the surface temperature sensor (TSW) (5) for detecting the over temperature of the outer wall temperature of the pump (3), and the solenoid valve (SV1, Flow meter 6 for regulating a certain amount of N 2 gas purged through SV2, SV3, SV4 and pressure switch 7 which is a safety device for measuring the pressure state of the gas exhausted from the pump 3 It consists of).
미설명 부호 1a는 게이트밸브, 3a는 소음기이다.Reference numeral 1a denotes a gate valve and 3a denotes a silencer.
상기와 같은 구성을 갖는 종래 웨이퍼 증착기의 압력 및 온도 조절장치는 챔버(1)에서 웨이퍼를 증착하는데 있어서, 자동압력조절밸브(2)의 개폐로 챔버(1)내의 압력이 조절되고, 펌프(3)는 단지 펌핑작용 만을 하게 되는데, 이때 펌프의 내부에 설치된 탄소봉(A)에 감지되는 기화압에 의해 썸머스틱밸브(4)를 열고 닫음으로써 냉각수의 흐름을 조정하여 펌프(3)의 온도를 유지하고, 펌프(3)내의 파우더 증착으로 발생하는 외벽의 마찰열을 표면온도감지센서(5)가 측정하여 약71℃가 감지되면 펌프(3)를 다운 시키게 된다.The pressure and temperature control apparatus of the conventional wafer deposition machine having the above-described configuration, in the deposition of the wafer in the chamber 1, the pressure in the chamber 1 is controlled by opening and closing of the automatic pressure control valve 2, the pump 3 ) Only performs the pumping action, in which the temperature of the pump 3 is maintained by adjusting the flow of the cooling water by opening and closing the summer stick valve 4 by the vaporization pressure sensed by the carbon rod A installed inside the pump. Then, the surface temperature sensor 5 measures the frictional heat of the outer wall generated by the powder deposition in the pump 3, and when about 71 ° C is sensed, the pump 3 is brought down.
한편, 펌프(3)내에 발생하는 반응 부산물인 파우더는 플로우미터(6)로 조정되어 솔레노이드밸브(SV1,SV2,SV3,SV4)를 통하여 일정량 퍼지되는 N2가스에 의해 파우더의 잔존이 억제되며, 펌프의 사용량이 증가하면 펌프에 파우더가 증착하여 원할한 배기가 이루어지지 않음으로 압력스위치(7)가 약 6psi(피에스아이)를 감지하면 펌프(3)는 다운 된다.On the other hand, the powder which is a reaction by-product generated in the pump 3 is controlled by the flow meter 6, the residual of the powder is suppressed by the N 2 gas purged by a certain amount through the solenoid valves (SV1, SV2, SV3, SV4), When the amount of pump is increased, the powder is deposited on the pump, so that the smooth exhaust is not achieved. When the pressure switch 7 detects about 6 psi, the pump 3 goes down.
그러나, 상기한 바와 같은 종래 웨이퍼 증착기의 압력 및 온도 조절장치는, 자동압력조절밸브(2)와 펌프(3) 또는 소음기(3a)에 반응 부산물인 파우더가 증착하여 장비가 제 기능을 발휘하지 못하고, 소음기 이후의 배관에 파우더 증착이 심하여 압력스위치(7)에서 6psi를 검지하면 공정진행중에 장비가 즉시 다운되고, 펌프(3)에 파우더 증착으로 발생하는 마찰열을 표면온도감지센서(5)가 측정하여 71℃가 되면 공정중에 장비가 즉시 다운되어 그로인한 공정손실이 막대한 문제점이 있었다.However, the pressure and temperature control device of the conventional wafer deposition machine as described above, the powder by the reaction by-product is deposited on the automatic pressure control valve (2) and the pump (3) or the silencer (3a), the equipment does not function properly If the powder deposition is severe in the pipe after the silencer, and 6psi is detected by the pressure switch 7, the equipment immediately goes down during the process, and the surface temperature sensor 5 measures the frictional heat generated by the powder deposition on the pump 3. As a result, when the temperature reached 71 ° C., the equipment immediately went down during the process, resulting in enormous problems.
이를 감안하여 안출한 본 고안의 목적은 장비내에 파우더 증착으로 인해 압력이나 온도에 이상이 발생하면 즉시 감지하여 정비할 수 있도록 하여 불시에 장비가 다운되는 데 따른 손실을 막을 수 있는 웨이퍼 증착기의 압력 및 온도 조절장치를 제공함에 있다.In view of this, the object of the present invention is to detect and maintain an abnormality in pressure or temperature due to powder deposition in the equipment, so that the pressure and the pressure of the wafer evaporator can be prevented from the downtime. To provide a temperature control device.
상기와 같은 본 고안의 목적을 달성하기 위하여, 공정 챔버와, 상기 챔버를 진공 감압하기 위해 펌핑을 하는 펌프와, 파우더의 증착정도를 검지하고 압력을검지하여 상.하한 값을 설정하고 N2가스의 유량을 자동조절하기 위한 압력조절수단 및 펌프의 온도를 검지하고 상.하한 값을 설정하여 실제 검지값과 비교하여 냉각수 량을 자동조절하는 온도조절수단으로 구성된 것을 특징으로 하는 웨이퍼 증착기의 압력 및 온도 조절장치가 제공된다.In order to achieve the object of the present invention as described above, the process chamber, the pump to pump the vacuum to decompress the chamber, the deposition degree of the powder is detected and the pressure is detected to set the upper and lower limits and N 2 gas The pressure and pressure of the wafer evaporator, characterized in that it consists of a pressure control means for automatically adjusting the flow rate of the temperature and the temperature of the pump to detect the temperature of the pump and set the upper and lower limit values and automatically adjust the amount of cooling water compared to the actual detection value. A thermostat is provided.
상기와 같은 본 고안에 의하면, 종래의 자동압력조절밸브를 배제하고 압력조절수단을 이용하여 펌프에 퍼지되는 N2량을 조절하고 설정한 상.하안 값에 의하여 펌프의 정비주기를 설정할 수 있으며, 온도조절수단을 이용하여 펌프의 온도를 검지하여 설정한 상.하한 값으로 실제 온도값과 비교하여 냉각수 량을 조절함으로써 펌프 내부의 마찰열과 냉각수의 온도차이에서 오는 파우더 증착을 억제할 수 있는 것이다.According to the present invention as described above, it is possible to set the maintenance cycle of the pump by adjusting the N 2 amount to be purged to the pump by using a pressure regulating means to remove the conventional automatic pressure regulating valve, The upper and lower limit values set by detecting the temperature of the pump by using the temperature control means can control the amount of cooling water compared with the actual temperature value, thereby suppressing powder deposition from the frictional heat inside the pump and the temperature difference between the cooling water.
이하, 상기한 바와 같은 본 고안에 의한 웨이퍼 증착기의 압력 및 온도 조절장치를 첨부 도면에 의거하여 보다 상세히 설명한다.Hereinafter, the pressure and temperature control device of the wafer evaporator according to the present invention as described above will be described in more detail with reference to the accompanying drawings.
첨부한 제2도는 본 고안 웨이퍼 증착기의 압력 및 온도 조절장치의 구성을 보인 구성도로서, 이에 도시한 바와 같이, 본 고안에 의한 웨이퍼 증착기의 압력 및 온도 조절장치는 공정 챔버(1)와, 상기 챔버(1)를 진공 감압하기 위한 펌프(3)와, 압력을 검지하고 파우더의 증착 정도를 검지하여 N2가스의 유량을 조절하며 설정한 상.하한 값에 의해 정비주기를 설정하는 압력조절수단과, 펌프(3)의 온도를 측정하여 설정한 상,하한 값과 비교하여 냉각수 량을 조절하는 온도조절수단으로 구성되어 있다.2 is a schematic view showing the configuration of the pressure and temperature control device of the wafer evaporator of the present invention. As shown in FIG. 2, the pressure and temperature control device of the wafer evaporator according to the present invention includes a process chamber 1 and the A pump 3 for vacuum depressurizing the chamber 1, and a pressure regulating means for detecting the pressure, detecting the deposition degree of the powder, adjusting the flow rate of the N 2 gas, and setting a maintenance cycle by the set upper and lower limits. And a temperature adjusting means for adjusting the amount of cooling water by comparing the upper and lower limit values set by measuring the temperature of the pump 3.
상기 압력조절수단은 압력센서(PG,PG1,PG2)의 압력을 검지하고, 소음기(3a)후단의 배관라인에 부착된 증착검지센서(10)에 의해 파우더의 증착을 검지하는 제어부(11)와, 상기 어부(11)에 검지되는 압력에 따라 펌프(3)에 N2량을 조절하여 퍼지하고, 퍼지되는 N2량의 상,하한 값이 설정되어 있는 유량제어기(12)로 구성되어 있다.The pressure regulating means detects the pressure of the pressure sensors PG, PG1 and PG2, and the control unit 11 detects the deposition of powder by the deposition detecting sensor 10 attached to the pipe line at the rear of the silencer 3a. And the flow rate controller 12 in which the pump 3 adjusts the amount of N 2 in accordance with the pressure detected by the fisherman 11, and the upper and lower limits of the amount of N2 to be purged are set.
상기 온도조절수단은 펌프(3)의 외부면에 부착되어 온도를 측정하기 위한 열전대(20)와, 펌프(3)의 온도를 콘트롤 하기 위한 온도 콘트롤러(21)와, 상기 온도 콘트롤러(21)에 의해 냉각수 량이 조절되는 피에조밸브(22)로 구성되어 있다.The temperature control means is attached to the outer surface of the pump 3, the thermocouple 20 for measuring the temperature, the temperature controller 21 for controlling the temperature of the pump 3, and the temperature controller 21 Piezo valve 22 is controlled by the amount of cooling water.
그외 장비를 이루는 여타 구성은 종래와 동일하므로 동일한 부분에 대해서는 동일 부호를 부여하고 상세한 설명은 생략한다.Since other components constituting the equipment are the same as in the prior art, the same parts are denoted by the same reference numerals, and detailed description thereof will be omitted.
이와 같이된 본 고안에 의한 웨이퍼 증착기의 압력 및 온도 조절 장치는 챔버(1)내의 압력을 자동압력조절밸브(2)없이 제어부(11)에서 압력센서(PG,PG1,PG2)와 증착검지센서(10)에서 측정되는 검지값에 따라 유량제어기(12)에 지시되는 량의 N2가스가 펌프(3)에 퍼지되어 압력이 조절되면서 부산물인 파우더가 제거되고, 펌프(3)내에 파우더가 증착되어 유량제어기(12)에 설정된 상,하한 값을 벗어날 경우에 제어부(11)에 경보를 울려 정비를 하도록 되어 있는 것이다.The pressure and temperature control device of the wafer evaporator according to the present invention as described above, the pressure sensor (PG, PG1, PG2) and the deposition detection sensor (in the control unit 11) without the pressure in the chamber (1) In accordance with the detection value measured in 10), the amount of N 2 gas indicated to the flow controller 12 is purged to the pump 3 to adjust the pressure to remove the byproduct powder, and to deposit the powder in the pump 3 In the case of deviation from the upper and lower limit values set in the flow controller 12, the control unit 11 sounds an alarm.
또한, 펌프(3)의 외부면에 부착된 열전대(20)에 의해 측정된 측정값을 온도 콘트롤러(21)에서 검지하고 피에조밸브(22)를 이용하여 냉각수량을 조절함으로써 온도가 조절이되어 펌프(3)의 온도를 항상 일정하게 유지할 수 있는 것이다.In addition, the temperature is controlled by detecting the measured value measured by the thermocouple 20 attached to the outer surface of the pump 3 by the temperature controller 21 and by adjusting the amount of cooling water using the piezo valve 22. The temperature of (3) can be kept constant all the time.
이상에서 상세히 설명한 바와 같이, 본 고안 웨이퍼 증착기의 압력 및 온도 조절장치에 의하면, 펌프내에 증착되는 파우더의 량에 따라 퍼지되는 N2량의 변화를 유량제어기에 설정된 상,하안 값과 비교하여 벗어날 경우 경보를 울려 장비를 멈추고 정비 함으로서 종래와 같이 불시에 다운 되어 막대한 손실이 발생하는 것을 방지하고, 펌프의 온도를 민감하게 제어하여 펌프내의 파우더 증착을 억제하며, 압력 및 온도의 변화 상태를 한 눈에 알아볼 수 있도록 하여 적정한 정비 주기를 선택할 수 있는 효과가 있는 것이다.As described in detail above, according to the pressure and temperature control apparatus of the inventive wafer deposition machine, when the change in the amount of N 2 purged according to the amount of powder deposited in the pump is out of comparison with the upper and lower values set in the flow controller, By stopping the alarm and stopping the equipment by the alarm, it prevents it from being accidentally downed as in the past, and the pump temperature is sensitively controlled to suppress the deposition of powder in the pump, and the pressure and temperature change state at a glance This makes it possible to select the appropriate maintenance interval.
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019950002661U KR0122309Y1 (en) | 1995-02-18 | 1995-02-18 | Device for controlling pressure and temperature of wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019950002661U KR0122309Y1 (en) | 1995-02-18 | 1995-02-18 | Device for controlling pressure and temperature of wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR960029730U KR960029730U (en) | 1996-09-17 |
| KR0122309Y1 true KR0122309Y1 (en) | 1998-08-17 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR2019950002661U KR0122309Y1 (en) | 1995-02-18 | 1995-02-18 | Device for controlling pressure and temperature of wafer |
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| Country | Link |
|---|---|
| KR (1) | KR0122309Y1 (en) |
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1995
- 1995-02-18 KR KR2019950002661U patent/KR0122309Y1/en not_active IP Right Cessation
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| Publication number | Publication date |
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| KR960029730U (en) | 1996-09-17 |
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