KR0117496Y1 - Wafer chuck - Google Patents
Wafer chuckInfo
- Publication number
- KR0117496Y1 KR0117496Y1 KR2019940029817U KR19940029817U KR0117496Y1 KR 0117496 Y1 KR0117496 Y1 KR 0117496Y1 KR 2019940029817 U KR2019940029817 U KR 2019940029817U KR 19940029817 U KR19940029817 U KR 19940029817U KR 0117496 Y1 KR0117496 Y1 KR 0117496Y1
- Authority
- KR
- South Korea
- Prior art keywords
- wafer
- chuck
- particle
- wafer chuck
- flat zone
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
본 고안은 웨이퍼의 공정반응으로 생긴 화합물이 상기 척상에 묻어 파티클로 작용하는 것을 방지하도록 접촉면을 최소화한 파티클 방지용 웨이퍼 척에 관한 것으로, 상기 웨이퍼 척은 그의 상측이 상기 웨이퍼의 플랫죤보다 소정크기 만큼 작게 수평으로 절단된 상태로 형성된 것을 특징으로 하여 웨이퍼척에 증착된 박막이 떨어져 웨이퍼에 파티클로 작용하는 것을 최소화하여 정비주기를 연장시키며, 생산수율을 향상시키는 효과가 있다.The present invention relates to a particle prevention wafer chuck which minimizes the contact surface to prevent the compound produced by the process reaction of the wafer to be buried on the chuck acts as a particle, the wafer chuck has a predetermined size above the flat zone of the wafer The thin film deposited on the wafer chuck is characterized in that it is formed in a horizontally cut state to minimize the action of the particles falling on the wafer to extend the maintenance period, there is an effect to improve the production yield.
Description
제 1 도의 (a),(b)는 본 고안에 의한 파티클 방지용 웨이퍼 척의 일실시예 구성도,(A), (b) of FIG. 1 is a configuration diagram of an embodiment of a particle chuck wafer chuck according to the present invention,
제 2 도는 본 고안에 의한 파티클 방지용 웨이퍼 척의 다른 실시예 구성도.Figure 2 is another embodiment of the particle prevention wafer chuck according to the present invention.
*도면의 주요부분에 대한 부호의 설명** Description of the symbols for the main parts of the drawings *
1 : 웨이퍼척1a : 수평부1: wafer chuck 1a: horizontal portion
1b : 경사부2 : 웨이퍼1b: inclined portion 2: wafer
2a : 웨이퍼 플랫죤3 : 웨이퍼 지지핀2a: wafer flat zone 3: wafer support pin
본 고안은 반도체 제조장비중 웨이퍼를 고정하는 척에 관한 것으로, 특히 웨이퍼의 공정반응으로 생긴 화합물이 상기 척상에 묻어 파티클로 작용하는 것을 방지하도록 접촉면을 최소화한 파티클 방지용 웨이퍼 척에 관한 것이다.The present invention relates to a chuck for fixing a wafer in semiconductor manufacturing equipment, and more particularly, to a particle prevention wafer chuck having a contact surface minimized to prevent a compound produced by a wafer reaction reaction from being buried on the chuck and acting as a particle.
일반적으로, 소정의 챔버에 로딩/언로딩이 되어 공정을 수행하는 웨이퍼는 상기 챔버내부에 구비된 수직타입의 척의 측면에 놓여져 지지된 후 여기에 반응가스를 공급하여 증착공정을 수행하며, 증착공정이 완료되면 소정의 포크가 상기 웨이퍼의 하측으로 인입되어 상기 웨이퍼를 상측으로 밀어올려 척으로 부터 분리시켜 이동한다.In general, a wafer that is loaded / unloaded into a predetermined chamber to perform a process is placed on a side of a vertical type chuck provided in the chamber and supported, and then supplies a reaction gas thereto to perform a deposition process. When this is completed, a predetermined fork is drawn into the lower side of the wafer to push the wafer upward and separate from the chuck to move.
여기서, 상기 웨이퍼의 증착공정이 반복적으로 진행됨에 따라 웨이퍼 외측의 척면에도 반응이 이루어져 막이 증착되며, 상기 척에 증착된 박막은 웨이퍼가 이동할 때 그의 플랫 죤 단부가 척면에 끌리면서 상기 척과의 마찰에 의해 박막이 떨어지면서 파티클로 작용하는 문제점이 있었다.Here, as the deposition process of the wafer is repeatedly performed, a reaction occurs on the chuck surface outside the wafer to deposit a film. The thin film deposited on the chuck is attracted to friction with the chuck while its flat zone end is attracted to the chuck surface when the wafer moves. There was a problem that the film acts as a particle falling by.
따라서, 본 고안은 상기의 제반문제점을 해결하기 위하여 안출된 것으로서, 척의 형상을 간단히 변형시켜 막이 증착되는 부분을 최소화하므로서 웨이퍼의 이동에 따른 그의 플랫죤 단부와 척면과의 마찰에 의해 파티클이 발생되는 것을 방지하는 파티클 방지용 웨이퍼 척을 제공함에 그 목적이 있다.Therefore, the present invention has been devised to solve the above problems, and the particles are generated by friction between the flat zone end and the chuck surface as the wafer moves while minimizing the portion where the film is deposited by simply modifying the shape of the chuck. It is an object of the present invention to provide a wafer chuck for preventing particles from being prevented.
상기 목적을 달성하기 위하여 본 고안은 웨이퍼의 박막 증착공정을 수행하기 위하여 지지하는 웨이퍼 척에 있어서, 상기 웨이퍼 척은 그의 상측이 상기 웨이퍼의 플랫죤보다 소정크기 만큼 작게 수평으로 절단된 상태로 형태된 것을 특징으로 한다.In order to achieve the above object, the present invention provides a wafer chuck which is supported to perform a thin film deposition process of a wafer, wherein the wafer chuck is formed in a state where an upper side thereof is horizontally cut by a predetermined size smaller than a flat zone of the wafer. It is characterized by.
이하, 첨부된 제 1 도 및 제 2 도의 도면을 참조하여 본 고안의 실시예를 상세히 설명한다.Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings of FIGS. 1 and 2.
제 1 도의 (a),(b)는 본 고안에 의한 파티클 방지용 웨이퍼 척의 일실시예 구성도이고, 제 2 도는 본 고안에 의한 파티클 방지용 웨이퍼 척의 다른 실시예 구성도로서, (a)는 정면도, (b)는 측면도이며, 도면에서 1은 웨이퍼척, 1a는 수평부, 1b는 경사부, 2는 웨이퍼, 2a 는 웨이퍼의 플랫죤, 3은 웨이퍼 지지핀을 각각 나타낸 것이다.(A) and (b) of FIG. 1 is a configuration diagram of an embodiment of a wafer chuck for particle prevention according to the present invention, and FIG. 2 is a configuration diagram of another embodiment of a wafer chuck for particle prevention according to the present invention, and (a) is a front view. (b) is a side view, in the drawings, 1 is a wafer chuck, 1a is a horizontal portion, 1b is an inclined portion, 2 is a wafer, 2a is a flat zone of the wafer, and 3 is a wafer support pin.
도면에 도시한 바와 같이, 본 고안에 의한 파티클 방지용 웨이퍼 척은 웨이퍼에 박막 증착공정시, 척면에 증착되는 막이 파티클로 작용하는 것을 방지할 수 있도록 한 것으로, 상기 웨이퍼 척(1)은 그의 상측 소정부분을 수평으로 절단시킨 수평부(1a)를 형성하되, 웨이퍼 플랫죤(2a)과 동일하게 형성되어 웨이퍼(2)에 박막 증착시 척면에 증착되는 면적을 최소화하고, 또한 공정이 완료된 웨이퍼(2)가 척면으로 부터 끌리면서 이동시 상기 웨이퍼 플랫죤(2A)과 상기 척(1)면과의 마찰에 의해 박막이 떨어져 파티클로 작용하는 것을 방지한다.As shown in the figure, the particle chuck wafer chuck according to the present invention is to prevent the film deposited on the chuck surface acts as a particle during the thin film deposition process on the wafer, the wafer chuck 1 is predetermined above The horizontal portion 1a is formed by cutting a portion horizontally, but is formed in the same manner as the wafer flat zone 2a to minimize the area deposited on the chuck surface when the thin film is deposited on the wafer 2, and further, the process is completed. The thin film is dragged from the chuck surface to prevent the thin film from falling and acting as a particle due to friction between the wafer flat zone 2A and the chuck 1 surface.
이때, 본 고안의 바람직한 실시예로서, 제 2 도에 도시한 바와 같이 상기 척(1)의 수평부(1a)를 웨이퍼 플랫죤(2a)의 중심에서 소정각도로 경사지게 경사부(1b)를 형성하여 웨이퍼(2)의 이동시 그의 플랫죤(2a) 양 모서리가 척(1)면과의 마찰을 일으켜 파티클이 발생되는 것을 방지하도록 한다.At this time, as a preferred embodiment of the present invention, as shown in FIG. 2, the inclined portion 1b is formed such that the horizontal portion 1a of the chuck 1 is inclined at a predetermined angle from the center of the wafer flat zone 2a. Thus, when the wafer 2 moves, both edges of the flat zone 2a cause friction with the surface of the chuck 1 to prevent particles from being generated.
미설명부호 3은 웨이퍼 지지핀이다.Reference numeral 3 is a wafer support pin.
상기와 같이 구성되어 작용하는 본 고안은 웨이퍼척에 증착된 박막이 떨어져 웨이퍼에 파티클로 작용하는 것을 최소화하여 정비주기를 연장시키며, 생산수율을 향상시키는 효과가 있다.The present invention configured and acting as described above minimizes the thin film deposited on the wafer chuck and acts as a particle on the wafer, thereby extending the maintenance period and improving the production yield.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019940029817U KR0117496Y1 (en) | 1994-11-10 | 1994-11-10 | Wafer chuck |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019940029817U KR0117496Y1 (en) | 1994-11-10 | 1994-11-10 | Wafer chuck |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR960019141U KR960019141U (en) | 1996-06-19 |
| KR0117496Y1 true KR0117496Y1 (en) | 1998-06-01 |
Family
ID=19397856
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR2019940029817U KR0117496Y1 (en) | 1994-11-10 | 1994-11-10 | Wafer chuck |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR0117496Y1 (en) |
-
1994
- 1994-11-10 KR KR2019940029817U patent/KR0117496Y1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR960019141U (en) | 1996-06-19 |
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