JPWO2025150233A1 - - Google Patents
Info
- Publication number
- JPWO2025150233A1 JPWO2025150233A1 JP2025512753A JP2025512753A JPWO2025150233A1 JP WO2025150233 A1 JPWO2025150233 A1 JP WO2025150233A1 JP 2025512753 A JP2025512753 A JP 2025512753A JP 2025512753 A JP2025512753 A JP 2025512753A JP WO2025150233 A1 JPWO2025150233 A1 JP WO2025150233A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/227—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2024001918 | 2024-01-10 | ||
| JP2024001918 | 2024-01-10 | ||
| PCT/JP2024/034673 WO2025150233A1 (ja) | 2024-01-10 | 2024-09-27 | 電磁波検出器 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2025150233A1 true JPWO2025150233A1 (https=) | 2025-07-17 |
| JP7728487B1 JP7728487B1 (ja) | 2025-08-22 |
| JPWO2025150233A5 JPWO2025150233A5 (https=) | 2025-12-09 |
Family
ID=96386843
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025512753A Active JP7728487B1 (ja) | 2024-01-10 | 2024-09-27 | 電磁波検出器 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP7728487B1 (https=) |
| WO (1) | WO2025150233A1 (https=) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7474482B2 (ja) * | 2020-05-29 | 2024-04-25 | 国立研究開発法人産業技術総合研究所 | 熱電変換素子および熱電変換素子の製造方法 |
| JP7433533B1 (ja) * | 2022-04-22 | 2024-02-19 | 三菱電機株式会社 | 電磁波検出器および電磁波検出器アレイ |
| US20250185514A1 (en) * | 2022-04-25 | 2025-06-05 | Mitsubishi Electric Corporation | Electromagnetic wave detector and electromagnetic wave detector array |
-
2024
- 2024-09-27 WO PCT/JP2024/034673 patent/WO2025150233A1/ja active Pending
- 2024-09-27 JP JP2025512753A patent/JP7728487B1/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| WO2025150233A1 (ja) | 2025-07-17 |
| JP7728487B1 (ja) | 2025-08-22 |
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