JPWO2025004843A1 - - Google Patents
Info
- Publication number
- JPWO2025004843A1 JPWO2025004843A1 JP2025529638A JP2025529638A JPWO2025004843A1 JP WO2025004843 A1 JPWO2025004843 A1 JP WO2025004843A1 JP 2025529638 A JP2025529638 A JP 2025529638A JP 2025529638 A JP2025529638 A JP 2025529638A JP WO2025004843 A1 JPWO2025004843 A1 JP WO2025004843A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32577—Electrical connecting means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2007—Holding mechanisms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023105013 | 2023-06-27 | ||
| PCT/JP2024/021603 WO2025004843A1 (ja) | 2023-06-27 | 2024-06-14 | プラズマ処理装置及び電位制御方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2025004843A1 true JPWO2025004843A1 (https=) | 2025-01-02 |
Family
ID=93938899
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025529638A Pending JPWO2025004843A1 (https=) | 2023-06-27 | 2024-06-14 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20260100340A1 (https=) |
| JP (1) | JPWO2025004843A1 (https=) |
| CN (1) | CN121359625A (https=) |
| TW (1) | TW202520337A (https=) |
| WO (1) | WO2025004843A1 (https=) |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5227264B2 (ja) * | 2009-06-02 | 2013-07-03 | 東京エレクトロン株式会社 | プラズマ処理装置，プラズマ処理方法，プログラム |
| US10163610B2 (en) * | 2015-07-13 | 2018-12-25 | Lam Research Corporation | Extreme edge sheath and wafer profile tuning through edge-localized ion trajectory control and plasma operation |
| US10763081B2 (en) * | 2017-07-10 | 2020-09-01 | Applied Materials, Inc. | Apparatus and methods for manipulating radio frequency power at an edge ring in plasma process device |
| JP7474651B2 (ja) * | 2019-09-09 | 2024-04-25 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP7344821B2 (ja) * | 2020-03-17 | 2023-09-14 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP7450427B2 (ja) * | 2020-03-25 | 2024-03-15 | 東京エレクトロン株式会社 | 基板支持器及びプラズマ処理装置 |
| US11276601B2 (en) * | 2020-04-10 | 2022-03-15 | Applied Materials, Inc. | Apparatus and methods for manipulating power at an edge ring in a plasma processing device |
| JP2023130043A (ja) * | 2022-03-07 | 2023-09-20 | 東京エレクトロン株式会社 | 載置台及び基板処理装置 |
| JP7849124B2 (ja) * | 2022-07-20 | 2026-04-21 | 東京エレクトロン株式会社 | 基板処理装置 |
-
2024
- 2024-06-14 JP JP2025529638A patent/JPWO2025004843A1/ja active Pending
- 2024-06-14 CN CN202480041221.5A patent/CN121359625A/zh active Pending
- 2024-06-14 WO PCT/JP2024/021603 patent/WO2025004843A1/ja not_active Ceased
- 2024-06-25 TW TW113123477A patent/TW202520337A/zh unknown
-
2025
- 2025-12-11 US US19/415,795 patent/US20260100340A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| WO2025004843A1 (ja) | 2025-01-02 |
| CN121359625A (zh) | 2026-01-16 |
| TW202520337A (zh) | 2025-05-16 |
| US20260100340A1 (en) | 2026-04-09 |