CN121359625A - 等离子体处理装置和电位控制方法 - Google Patents

等离子体处理装置和电位控制方法

Info

Publication number
CN121359625A
CN121359625A CN202480041221.5A CN202480041221A CN121359625A CN 121359625 A CN121359625 A CN 121359625A CN 202480041221 A CN202480041221 A CN 202480041221A CN 121359625 A CN121359625 A CN 121359625A
Authority
CN
China
Prior art keywords
ring assembly
plasma processing
electrodes
processing apparatus
electric power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202480041221.5A
Other languages
English (en)
Chinese (zh)
Inventor
河田祐纪
松本直树
山田和人
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN121359625A publication Critical patent/CN121359625A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2007—Holding mechanisms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
CN202480041221.5A 2023-06-27 2024-06-14 等离子体处理装置和电位控制方法 Pending CN121359625A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2023-105013 2023-06-27
JP2023105013 2023-06-27
PCT/JP2024/021603 WO2025004843A1 (ja) 2023-06-27 2024-06-14 プラズマ処理装置及び電位制御方法

Publications (1)

Publication Number Publication Date
CN121359625A true CN121359625A (zh) 2026-01-16

Family

ID=93938899

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202480041221.5A Pending CN121359625A (zh) 2023-06-27 2024-06-14 等离子体处理装置和电位控制方法

Country Status (5)

Country Link
US (1) US20260100340A1 (https=)
JP (1) JPWO2025004843A1 (https=)
CN (1) CN121359625A (https=)
TW (1) TW202520337A (https=)
WO (1) WO2025004843A1 (https=)

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5227264B2 (ja) * 2009-06-02 2013-07-03 東京エレクトロン株式会社 プラズマ処理装置，プラズマ処理方法，プログラム
US10163610B2 (en) * 2015-07-13 2018-12-25 Lam Research Corporation Extreme edge sheath and wafer profile tuning through edge-localized ion trajectory control and plasma operation
US10763081B2 (en) * 2017-07-10 2020-09-01 Applied Materials, Inc. Apparatus and methods for manipulating radio frequency power at an edge ring in plasma process device
JP7474651B2 (ja) * 2019-09-09 2024-04-25 東京エレクトロン株式会社 プラズマ処理装置
JP7344821B2 (ja) * 2020-03-17 2023-09-14 東京エレクトロン株式会社 プラズマ処理装置
JP7450427B2 (ja) * 2020-03-25 2024-03-15 東京エレクトロン株式会社 基板支持器及びプラズマ処理装置
US11276601B2 (en) * 2020-04-10 2022-03-15 Applied Materials, Inc. Apparatus and methods for manipulating power at an edge ring in a plasma processing device
JP2023130043A (ja) * 2022-03-07 2023-09-20 東京エレクトロン株式会社 載置台及び基板処理装置
JP7849124B2 (ja) * 2022-07-20 2026-04-21 東京エレクトロン株式会社 基板処理装置

Also Published As

Publication number Publication date
WO2025004843A1 (ja) 2025-01-02
JPWO2025004843A1 (https=) 2025-01-02
TW202520337A (zh) 2025-05-16
US20260100340A1 (en) 2026-04-09

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