JPWO2025004787A1 - - Google Patents

Info

Publication number
JPWO2025004787A1
JPWO2025004787A1 JP2025529610A JP2025529610A JPWO2025004787A1 JP WO2025004787 A1 JPWO2025004787 A1 JP WO2025004787A1 JP 2025529610 A JP2025529610 A JP 2025529610A JP 2025529610 A JP2025529610 A JP 2025529610A JP WO2025004787 A1 JPWO2025004787 A1 JP WO2025004787A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2025529610A
Other languages
Japanese (ja)
Other versions
JPWO2025004787A5 (https=
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2025004787A1 publication Critical patent/JPWO2025004787A1/ja
Publication of JPWO2025004787A5 publication Critical patent/JPWO2025004787A5/ja
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/36Carbides
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00Grinding, lapping or polishing of wafers, substrates or parts of devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
JP2025529610A 2023-06-29 2024-06-11 Pending JPWO2025004787A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023107032 2023-06-29
PCT/JP2024/021156 WO2025004787A1 (ja) 2023-06-29 2024-06-11 炭化珪素エピタキシャル基板、炭化珪素エピタキシャル基板の製造方法および炭化珪素半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPWO2025004787A1 true JPWO2025004787A1 (https=) 2025-01-02
JPWO2025004787A5 JPWO2025004787A5 (https=) 2026-04-01

Family

ID=93938790

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2025529610A Pending JPWO2025004787A1 (https=) 2023-06-29 2024-06-11

Country Status (2)

Country Link
JP (1) JPWO2025004787A1 (https=)
WO (1) WO2025004787A1 (https=)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9018639B2 (en) * 2012-10-26 2015-04-28 Dow Corning Corporation Flat SiC semiconductor substrate
JP2017183729A (ja) * 2017-04-25 2017-10-05 住友電気工業株式会社 炭化珪素半導体基板およびその製造方法、ならびに炭化珪素半導体装置の製造方法

Also Published As

Publication number Publication date
WO2025004787A1 (ja) 2025-01-02

Similar Documents

Publication Publication Date Title
BR102022025291A2 (https=)
BR102023014872A2 (https=)
BR102023012440A2 (https=)
BR102023010976A2 (https=)
BR102023009641A2 (https=)
BR102023008688A2 (https=)
BR102023007252A2 (https=)
BR102023005164A2 (https=)
BR102023001987A2 (https=)
BR102023001877A2 (https=)
BR102022026909A2 (https=)
BR102022017795A2 (https=)
BR202022009269U2 (https=)
BR202022005961U2 (https=)
BR202022001779U2 (https=)
BR202022000931U2 (https=)
BY13141U (https=)
BY13151U (https=)
BY13135U (https=)
BY13136U (https=)
BY13137U (https=)
BY13138U (https=)
BY13139U (https=)
BY13140U (https=)
CN307047981S (https=)

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20251125