JPWO2024219050A1 - - Google Patents

Info

Publication number
JPWO2024219050A1
JPWO2024219050A1 JP2025515059A JP2025515059A JPWO2024219050A1 JP WO2024219050 A1 JPWO2024219050 A1 JP WO2024219050A1 JP 2025515059 A JP2025515059 A JP 2025515059A JP 2025515059 A JP2025515059 A JP 2025515059A JP WO2024219050 A1 JPWO2024219050 A1 JP WO2024219050A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2025515059A
Other languages
Japanese (ja)
Other versions
JPWO2024219050A5 (https=
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2024219050A1 publication Critical patent/JPWO2024219050A1/ja
Publication of JPWO2024219050A5 publication Critical patent/JPWO2024219050A5/ja
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • C30B25/04Pattern deposit, e.g. by using masks
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • C30B25/10Heating of the reaction chamber or the substrate
    • C30B25/105Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • C30B25/18Epitaxial-layer growth characterised by the substrate
    • C30B25/186Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/04Diamond
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R29/00Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
    • G01R29/08Measuring electromagnetic field characteristics
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00Arrangements or instruments for measuring magnetic variables
    • G01R33/20Arrangements or instruments for measuring magnetic variables involving magnetic resonance
    • G01R33/24Arrangements or instruments for measuring magnetic variables involving magnetic resonance for measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/26Arrangements or instruments for measuring magnetic variables involving magnetic resonance for measuring direction or magnitude of magnetic fields or magnetic flux using optical pumping
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00Arrangements or instruments for measuring magnetic variables
    • G01R33/20Arrangements or instruments for measuring magnetic variables involving magnetic resonance
    • G01R33/28Details of apparatus provided for in groups G01R33/44 - G01R33/64
    • G01R33/32Excitation or detection systems, e.g. using radio frequency signals
    • G01R33/323Detection of MR without the use of RF or microwaves, e.g. force-detected MR, thermally detected MR, MR detection via electrical conductivity, optically detected MR

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2025515059A 2023-04-18 2024-02-02 Pending JPWO2024219050A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023067532 2023-04-18
PCT/JP2024/003395 WO2024219050A1 (ja) 2023-04-18 2024-02-02 ダイヤモンドスピンセンサおよびその製造方法

Publications (2)

Publication Number Publication Date
JPWO2024219050A1 true JPWO2024219050A1 (https=) 2024-10-24
JPWO2024219050A5 JPWO2024219050A5 (https=) 2026-01-22

Family

ID=93152264

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2025515059A Pending JPWO2024219050A1 (https=) 2023-04-18 2024-02-02

Country Status (4)

Country Link
EP (1) EP4700418A1 (https=)
JP (1) JPWO2024219050A1 (https=)
CN (1) CN121039516A (https=)
WO (1) WO2024219050A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025182849A1 (ja) * 2024-02-28 2025-09-04 住友電気工業株式会社 ダイヤモンドセンサ

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9133566B2 (en) * 2005-12-09 2015-09-15 Element Six Technologies Limited High crystalline quality synthetic diamond
US10324142B2 (en) * 2014-01-20 2019-06-18 Japan Science And Technology Agency Diamond crystal, diamond devices, magnetic sensor, magnetic sensor system, and method for manufacturing sensor array
CN107356820A (zh) * 2017-06-07 2017-11-17 南京邮电大学 一种基于脉冲光探测磁共振的电磁场近场成像系统及方法
US10481155B2 (en) * 2018-03-09 2019-11-19 Somalogic, Inc. Proteomic assay using quantum sensors
EP3803423A4 (en) * 2018-04-30 2022-03-16 Khodas, Maxim ESTIMATION OF DYNAMIC PROPERTIES OF FLUIDS USING OPTICAL DEFECTS PRESENT IN SOLIDS
JP7186963B2 (ja) * 2018-10-16 2022-12-12 国立大学法人東京工業大学 磁気計測装置
DE102019219052A1 (de) * 2019-12-06 2021-06-10 Robert Bosch Gmbh Verfahren zur Ermittlung der Änderung einer Orientierung im Raum eines NMR-Gyroskops sowie ein NMR-Gyroskop
CN116997689A (zh) * 2021-03-31 2023-11-03 住友电气工业株式会社 单晶金刚石及其制造方法
JP7535988B2 (ja) 2021-11-01 2024-08-19 三菱電機株式会社 乾燥装置、熱交換換気装置および乾燥制御方法

Also Published As

Publication number Publication date
WO2024219050A1 (ja) 2024-10-24
CN121039516A (zh) 2025-11-28
EP4700418A1 (en) 2026-02-25

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Legal Events

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Effective date: 20250718