CN121039516A - 金刚石自旋传感器及其制造方法 - Google Patents

金刚石自旋传感器及其制造方法

Info

Publication number
CN121039516A
CN121039516A CN202480026238.3A CN202480026238A CN121039516A CN 121039516 A CN121039516 A CN 121039516A CN 202480026238 A CN202480026238 A CN 202480026238A CN 121039516 A CN121039516 A CN 121039516A
Authority
CN
China
Prior art keywords
diamond
inclined surface
color center
spin sensor
center
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202480026238.3A
Other languages
English (en)
Chinese (zh)
Inventor
辰巳夏生
林司
出口洋成
西林良树
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissin Electric Co Ltd
Sumitomo Electric Industries Ltd
Original Assignee
Nissin Electric Co Ltd
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissin Electric Co Ltd, Sumitomo Electric Industries Ltd filed Critical Nissin Electric Co Ltd
Publication of CN121039516A publication Critical patent/CN121039516A/zh
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/04—Pattern deposit, e.g. by using masks
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
    • G01R29/08—Measuring electromagnetic field characteristics
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/20—Arrangements or instruments for measuring magnetic variables involving magnetic resonance
    • G01R33/24—Arrangements or instruments for measuring magnetic variables involving magnetic resonance for measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/26—Arrangements or instruments for measuring magnetic variables involving magnetic resonance for measuring direction or magnitude of magnetic fields or magnetic flux using optical pumping
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/20—Arrangements or instruments for measuring magnetic variables involving magnetic resonance
    • G01R33/28—Details of apparatus provided for in groups G01R33/44 - G01R33/64
    • G01R33/32—Excitation or detection systems, e.g. using radio frequency signals
    • G01R33/323—Detection of MR without the use of RF or microwaves, e.g. force-detected MR, thermally detected MR, MR detection via electrical conductivity, optically detected MR

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN202480026238.3A 2023-04-18 2024-02-02 金刚石自旋传感器及其制造方法 Pending CN121039516A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2023-067532 2023-04-18
JP2023067532 2023-04-18
PCT/JP2024/003395 WO2024219050A1 (ja) 2023-04-18 2024-02-02 ダイヤモンドスピンセンサおよびその製造方法

Publications (1)

Publication Number Publication Date
CN121039516A true CN121039516A (zh) 2025-11-28

Family

ID=93152264

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202480026238.3A Pending CN121039516A (zh) 2023-04-18 2024-02-02 金刚石自旋传感器及其制造方法

Country Status (4)

Country Link
EP (1) EP4700418A1 (https=)
JP (1) JPWO2024219050A1 (https=)
CN (1) CN121039516A (https=)
WO (1) WO2024219050A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025182849A1 (ja) * 2024-02-28 2025-09-04 住友電気工業株式会社 ダイヤモンドセンサ

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9133566B2 (en) * 2005-12-09 2015-09-15 Element Six Technologies Limited High crystalline quality synthetic diamond
US10324142B2 (en) * 2014-01-20 2019-06-18 Japan Science And Technology Agency Diamond crystal, diamond devices, magnetic sensor, magnetic sensor system, and method for manufacturing sensor array
CN107356820A (zh) * 2017-06-07 2017-11-17 南京邮电大学 一种基于脉冲光探测磁共振的电磁场近场成像系统及方法
US10481155B2 (en) * 2018-03-09 2019-11-19 Somalogic, Inc. Proteomic assay using quantum sensors
EP3803423A4 (en) * 2018-04-30 2022-03-16 Khodas, Maxim ESTIMATION OF DYNAMIC PROPERTIES OF FLUIDS USING OPTICAL DEFECTS PRESENT IN SOLIDS
JP7186963B2 (ja) * 2018-10-16 2022-12-12 国立大学法人東京工業大学 磁気計測装置
DE102019219052A1 (de) * 2019-12-06 2021-06-10 Robert Bosch Gmbh Verfahren zur Ermittlung der Änderung einer Orientierung im Raum eines NMR-Gyroskops sowie ein NMR-Gyroskop
CN116997689A (zh) * 2021-03-31 2023-11-03 住友电气工业株式会社 单晶金刚石及其制造方法
JP7535988B2 (ja) 2021-11-01 2024-08-19 三菱電機株式会社 乾燥装置、熱交換換気装置および乾燥制御方法

Also Published As

Publication number Publication date
WO2024219050A1 (ja) 2024-10-24
EP4700418A1 (en) 2026-02-25
JPWO2024219050A1 (https=) 2024-10-24

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