JPWO2024122460A1 - - Google Patents
Info
- Publication number
- JPWO2024122460A1 JPWO2024122460A1 JP2024562736A JP2024562736A JPWO2024122460A1 JP WO2024122460 A1 JPWO2024122460 A1 JP WO2024122460A1 JP 2024562736 A JP2024562736 A JP 2024562736A JP 2024562736 A JP2024562736 A JP 2024562736A JP WO2024122460 A1 JPWO2024122460 A1 JP WO2024122460A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
- C07F5/02—Boron compounds
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/22—Tin compounds
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/22—Tin compounds
- C07F7/2224—Compounds having one or more tin-oxygen linkages
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022196306 | 2022-12-08 | ||
| PCT/JP2023/043095 WO2024122460A1 (ja) | 2022-12-08 | 2023-12-01 | レジスト組成物及びその製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2024122460A1 true JPWO2024122460A1 (https=) | 2024-06-13 |
Family
ID=91379408
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024562736A Pending JPWO2024122460A1 (https=) | 2022-12-08 | 2023-12-01 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20260050210A1 (https=) |
| JP (1) | JPWO2024122460A1 (https=) |
| KR (1) | KR20250073648A (https=) |
| TW (1) | TW202433172A (https=) |
| WO (1) | WO2024122460A1 (https=) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008505773A (ja) * | 2004-06-08 | 2008-02-28 | ナノシス・インク． | ナノ構造の堆積後封入、前記ナノ構造を含む組成物、デバイス及びシステム |
| JP2016018133A (ja) * | 2014-07-09 | 2016-02-01 | Jsr株式会社 | 感放射線性樹脂組成物、硬化膜及びその形成方法、並びに表示素子 |
| WO2022209950A1 (ja) * | 2021-03-31 | 2022-10-06 | 株式会社日本触媒 | 高エネルギー線用レジスト組成物、高エネルギー線用レジスト組成物の製造方法、レジストパターン形成方法、及び半導体装置の製造方法 |
-
2023
- 2023-12-01 US US19/129,795 patent/US20260050210A1/en active Pending
- 2023-12-01 KR KR1020257013150A patent/KR20250073648A/ko active Pending
- 2023-12-01 WO PCT/JP2023/043095 patent/WO2024122460A1/ja not_active Ceased
- 2023-12-01 JP JP2024562736A patent/JPWO2024122460A1/ja active Pending
- 2023-12-06 TW TW112147405A patent/TW202433172A/zh unknown
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008505773A (ja) * | 2004-06-08 | 2008-02-28 | ナノシス・インク． | ナノ構造の堆積後封入、前記ナノ構造を含む組成物、デバイス及びシステム |
| JP2016018133A (ja) * | 2014-07-09 | 2016-02-01 | Jsr株式会社 | 感放射線性樹脂組成物、硬化膜及びその形成方法、並びに表示素子 |
| WO2022209950A1 (ja) * | 2021-03-31 | 2022-10-06 | 株式会社日本触媒 | 高エネルギー線用レジスト組成物、高エネルギー線用レジスト組成物の製造方法、レジストパターン形成方法、及び半導体装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202433172A (zh) | 2024-08-16 |
| US20260050210A1 (en) | 2026-02-19 |
| WO2024122460A1 (ja) | 2024-06-13 |
| KR20250073648A (ko) | 2025-05-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20250305 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20260407 |