JPWO2024105723A1 - - Google Patents
Info
- Publication number
- JPWO2024105723A1 JPWO2024105723A1 JP2024558489A JP2024558489A JPWO2024105723A1 JP WO2024105723 A1 JPWO2024105723 A1 JP WO2024105723A1 JP 2024558489 A JP2024558489 A JP 2024558489A JP 2024558489 A JP2024558489 A JP 2024558489A JP WO2024105723 A1 JPWO2024105723 A1 JP WO2024105723A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2022/042211 WO2024105723A1 (ja) | 2022-11-14 | 2022-11-14 | 多重量子井戸構造、半導体レーザおよび多重量子井戸構造の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2024105723A1 true JPWO2024105723A1 (https=) | 2024-05-23 |
Family
ID=91083981
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024558489A Pending JPWO2024105723A1 (https=) | 2022-11-14 | 2022-11-14 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPWO2024105723A1 (https=) |
| WO (1) | WO2024105723A1 (https=) |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06104530A (ja) * | 1992-09-18 | 1994-04-15 | Fujitsu Ltd | 半導体発光装置 |
| JP2867819B2 (ja) * | 1992-11-10 | 1999-03-10 | 日本電気株式会社 | 多重量子井戸型半導体レーザ |
| JP4571372B2 (ja) * | 2002-11-27 | 2010-10-27 | ローム株式会社 | 半導体発光素子 |
| JP2006203100A (ja) * | 2005-01-24 | 2006-08-03 | Opnext Japan Inc | 半導体レーザおよび光送信器モジュール |
| KR20080035865A (ko) * | 2006-10-20 | 2008-04-24 | 삼성전자주식회사 | 반도체 발광 소자 |
| JP2009124009A (ja) * | 2007-11-16 | 2009-06-04 | Nippon Telegr & Teleph Corp <Ntt> | 光半導体装置 |
| DE102013104351B4 (de) * | 2013-04-29 | 2022-01-20 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterschichtenfolge und Verfahren zum Betreiben eines optoelektronischen Halbleiterchips |
| JP6437869B2 (ja) * | 2015-04-02 | 2018-12-12 | 日本電信電話株式会社 | 半導体レーザ |
| US10218152B1 (en) * | 2017-08-22 | 2019-02-26 | Sharp Kabushiki Kaisha | Semiconductor laser diode with low threshold current |
| US20230178964A1 (en) * | 2020-05-25 | 2023-06-08 | Nippon Telegraph And Telephone Corporation | Strained Quantum Well Structure, Optical Semiconductor Device, and Semiconductor Laser |
-
2022
- 2022-11-14 WO PCT/JP2022/042211 patent/WO2024105723A1/ja not_active Ceased
- 2022-11-14 JP JP2024558489A patent/JPWO2024105723A1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| WO2024105723A1 (ja) | 2024-05-23 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20251015 |