JPWO2024101131A1 - - Google Patents
Info
- Publication number
- JPWO2024101131A1 JPWO2024101131A1 JP2024557290A JP2024557290A JPWO2024101131A1 JP WO2024101131 A1 JPWO2024101131 A1 JP WO2024101131A1 JP 2024557290 A JP2024557290 A JP 2024557290A JP 2024557290 A JP2024557290 A JP 2024557290A JP WO2024101131 A1 JPWO2024101131 A1 JP WO2024101131A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022178811 | 2022-11-08 | ||
| PCT/JP2023/038175 WO2024101131A1 (ja) | 2022-11-08 | 2023-10-23 | ＳｉＣ半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2024101131A1 true JPWO2024101131A1 (https=) | 2024-05-16 |
| JPWO2024101131A5 JPWO2024101131A5 (https=) | 2025-07-17 |
Family
ID=91032632
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024557290A Pending JPWO2024101131A1 (https=) | 2022-11-08 | 2023-10-23 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPWO2024101131A1 (https=) |
| WO (1) | WO2024101131A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2026018786A1 (ja) * | 2024-07-16 | 2026-01-22 | ローム株式会社 | 半導体装置 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4764998B2 (ja) * | 2003-11-14 | 2011-09-07 | 富士電機株式会社 | 半導体装置 |
| JP5048273B2 (ja) * | 2006-05-10 | 2012-10-17 | オンセミコンダクター・トレーディング・リミテッド | 絶縁ゲート型半導体装置 |
| JP6022082B2 (ja) * | 2014-07-11 | 2016-11-09 | 新電元工業株式会社 | 半導体装置及び半導体装置の製造方法 |
| JP6876767B2 (ja) * | 2019-10-07 | 2021-05-26 | ローム株式会社 | 半導体装置 |
| JP7471974B2 (ja) * | 2020-09-18 | 2024-04-22 | 株式会社東芝 | 半導体装置 |
| CN116830262A (zh) * | 2021-03-18 | 2023-09-29 | 罗姆股份有限公司 | 宽带隙半导体装置 |
-
2023
- 2023-10-23 WO PCT/JP2023/038175 patent/WO2024101131A1/ja not_active Ceased
- 2023-10-23 JP JP2024557290A patent/JPWO2024101131A1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| WO2024101131A1 (ja) | 2024-05-16 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20250424 |