JPWO2024079585A1 - - Google Patents

Info

Publication number
JPWO2024079585A1
JPWO2024079585A1 JP2024550922A JP2024550922A JPWO2024079585A1 JP WO2024079585 A1 JPWO2024079585 A1 JP WO2024079585A1 JP 2024550922 A JP2024550922 A JP 2024550922A JP 2024550922 A JP2024550922 A JP 2024550922A JP WO2024079585 A1 JPWO2024079585 A1 JP WO2024079585A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024550922A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2024079585A1 publication Critical patent/JPWO2024079585A1/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices
    • H10B12/30DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices
    • H10B12/01Manufacture or treatment
    • H10B12/02Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05Making the transistor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/67Thin-film transistors [TFT]

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
JP2024550922A 2022-10-14 2023-10-06 Pending JPWO2024079585A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022165766 2022-10-14
PCT/IB2023/060029 WO2024079585A1 (ja) 2022-10-14 2023-10-06 トランジスタ及び記憶装置

Publications (1)

Publication Number Publication Date
JPWO2024079585A1 true JPWO2024079585A1 (https=) 2024-04-18

Family

ID=90669166

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024550922A Pending JPWO2024079585A1 (https=) 2022-10-14 2023-10-06

Country Status (5)

Country Link
US (1) US20260013103A1 (https=)
JP (1) JPWO2024079585A1 (https=)
KR (1) KR20250090280A (https=)
CN (1) CN119908180A (https=)
WO (1) WO2024079585A1 (https=)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101473684B1 (ko) 2009-12-25 2014-12-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101809105B1 (ko) 2010-08-06 2017-12-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 집적 회로
US9312257B2 (en) 2012-02-29 2016-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2016128859A1 (en) * 2015-02-11 2016-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN114424339A (zh) 2019-09-20 2022-04-29 株式会社半导体能源研究所 半导体装置及半导体装置的制造方法
US20220189957A1 (en) * 2020-12-10 2022-06-16 Intel Corporation Transistors, memory cells, and arrangements thereof

Also Published As

Publication number Publication date
US20260013103A1 (en) 2026-01-08
CN119908180A (zh) 2025-04-29
KR20250090280A (ko) 2025-06-19
WO2024079585A1 (ja) 2024-04-18

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