JPWO2024070312A1 - - Google Patents

Info

Publication number
JPWO2024070312A1
JPWO2024070312A1 JP2024549864A JP2024549864A JPWO2024070312A1 JP WO2024070312 A1 JPWO2024070312 A1 JP WO2024070312A1 JP 2024549864 A JP2024549864 A JP 2024549864A JP 2024549864 A JP2024549864 A JP 2024549864A JP WO2024070312 A1 JPWO2024070312 A1 JP WO2024070312A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024549864A
Other languages
Japanese (ja)
Other versions
JPWO2024070312A5 (https=
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2024070312A1 publication Critical patent/JPWO2024070312A1/ja
Publication of JPWO2024070312A5 publication Critical patent/JPWO2024070312A5/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • H10D84/02Manufacture or treatment characterised by using material-based technologies
    • H10D84/03Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/01Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/40Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
JP2024549864A 2022-09-30 2023-08-18 Pending JPWO2024070312A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022157864 2022-09-30
PCT/JP2023/029800 WO2024070312A1 (ja) 2022-09-30 2023-08-18 半導体装置および半導体モジュール

Publications (2)

Publication Number Publication Date
JPWO2024070312A1 true JPWO2024070312A1 (https=) 2024-04-04
JPWO2024070312A5 JPWO2024070312A5 (https=) 2025-06-12

Family

ID=90477313

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024549864A Pending JPWO2024070312A1 (https=) 2022-09-30 2023-08-18

Country Status (2)

Country Link
JP (1) JPWO2024070312A1 (https=)
WO (1) WO2024070312A1 (https=)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4970787B2 (ja) * 2005-12-14 2012-07-11 ルネサスエレクトロニクス株式会社 半導体装置
US9035422B2 (en) * 2013-09-12 2015-05-19 Texas Instruments Incorporated Multilayer high voltage isolation barrier in an integrated circuit
US20230411281A1 (en) * 2020-09-23 2023-12-21 Rohm Co., Ltd. Semiconductor device, semiconductor module, motor drive device, and vehicle

Also Published As

Publication number Publication date
WO2024070312A1 (ja) 2024-04-04

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Legal Events

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Effective date: 20250225