JPWO2024014510A5 - - Google Patents

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Publication number
JPWO2024014510A5
JPWO2024014510A5 JP2024533753A JP2024533753A JPWO2024014510A5 JP WO2024014510 A5 JPWO2024014510 A5 JP WO2024014510A5 JP 2024533753 A JP2024533753 A JP 2024533753A JP 2024533753 A JP2024533753 A JP 2024533753A JP WO2024014510 A5 JPWO2024014510 A5 JP WO2024014510A5
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JP
Japan
Prior art keywords
jfet
channel
sectional
showing
region
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Pending
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JP2024533753A
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English (en)
Japanese (ja)
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JPWO2024014510A1 (https=
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Application filed filed Critical
Priority claimed from PCT/JP2023/025890 external-priority patent/WO2024014510A1/ja
Publication of JPWO2024014510A1 publication Critical patent/JPWO2024014510A1/ja
Publication of JPWO2024014510A5 publication Critical patent/JPWO2024014510A5/ja
Pending legal-status Critical Current

Links

JP2024533753A 2022-07-14 2023-07-13 Pending JPWO2024014510A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022112930 2022-07-14
PCT/JP2023/025890 WO2024014510A1 (ja) 2022-07-14 2023-07-13 ＳｉＣ接合型電界効果トランジスタ及びＳｉＣ相補型接合型電界効果トランジスタ

Publications (2)

Publication Number Publication Date
JPWO2024014510A1 JPWO2024014510A1 (https=) 2024-01-18
JPWO2024014510A5 true JPWO2024014510A5 (https=) 2026-04-01

Family

ID=89536764

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024533753A Pending JPWO2024014510A1 (https=) 2022-07-14 2023-07-13

Country Status (3)

Country Link
US (1) US20250107188A1 (https=)
JP (1) JPWO2024014510A1 (https=)
WO (1) WO2024014510A1 (https=)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3762556B2 (ja) * 1998-11-30 2006-04-05 三洋電機株式会社 半導体集積回路装置およびその製造方法
JP3925253B2 (ja) * 2002-03-15 2007-06-06 住友電気工業株式会社 横型接合型電界効果トランジスタおよびその製造方法
JP4985757B2 (ja) * 2009-12-25 2012-07-25 株式会社デンソー 炭化珪素半導体装置
JP5126245B2 (ja) * 2010-02-12 2013-01-23 株式会社デンソー コンプリメンタリー接合電界効果トランジスタを備えた炭化珪素半導体装置およびその製造方法
JP7074320B2 (ja) * 2017-11-16 2022-05-24 国立大学法人京都大学 ＳｉＣ接合型電界効果トランジスタ及びＳｉＣ相補型接合型電界効果トランジスタ

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