JPWO2023234304A1 - - Google Patents
Info
- Publication number
- JPWO2023234304A1 JPWO2023234304A1 JP2024524877A JP2024524877A JPWO2023234304A1 JP WO2023234304 A1 JPWO2023234304 A1 JP WO2023234304A1 JP 2024524877 A JP2024524877 A JP 2024524877A JP 2024524877 A JP2024524877 A JP 2024524877A JP WO2023234304 A1 JPWO2023234304 A1 JP WO2023234304A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
- H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
- H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
- H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022089057 | 2022-05-31 | ||
| PCT/JP2023/020125 WO2023234304A1 (ja) | 2022-05-31 | 2023-05-30 | エッチング方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2023234304A1 true JPWO2023234304A1 (https=) | 2023-12-07 |
Family
ID=89024864
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024524877A Pending JPWO2023234304A1 (https=) | 2022-05-31 | 2023-05-30 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20250361440A1 (https=) |
| JP (1) | JPWO2023234304A1 (https=) |
| KR (1) | KR20250016114A (https=) |
| TW (1) | TW202407760A (https=) |
| WO (1) | WO2023234304A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102925784B1 (ko) * | 2024-04-19 | 2026-02-10 | 아주대학교산학협력단 | 헥사플루오로벤젠을 포함하는 식각 가스 조성물 및 이를 사용한 플라즈마 식각 방법 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US155773A (en) | 1874-10-06 | Improvement in pumps for hydraulic presses | ||
| TWI612182B (zh) * | 2013-09-09 | 2018-01-21 | 液態空氣喬治斯克勞帝方法研究開發股份有限公司 | 用蝕刻氣體蝕刻半導體結構的方法 |
| JP6788176B2 (ja) * | 2015-04-06 | 2020-11-25 | セントラル硝子株式会社 | ドライエッチングガスおよびドライエッチング方法 |
| TWI808274B (zh) | 2018-10-26 | 2023-07-11 | 日商關東電化工業股份有限公司 | 含有具有不飽和鍵之含硫氟碳化合物的乾式蝕刻氣體組成物及使用其之乾式蝕刻方法 |
-
2023
- 2023-05-30 JP JP2024524877A patent/JPWO2023234304A1/ja active Pending
- 2023-05-30 WO PCT/JP2023/020125 patent/WO2023234304A1/ja not_active Ceased
- 2023-05-30 KR KR1020247038317A patent/KR20250016114A/ko active Pending
- 2023-05-30 US US18/867,945 patent/US20250361440A1/en active Pending
- 2023-05-31 TW TW112120323A patent/TW202407760A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO2023234304A1 (ja) | 2023-12-07 |
| KR20250016114A (ko) | 2025-02-03 |
| TW202407760A (zh) | 2024-02-16 |
| US20250361440A1 (en) | 2025-11-27 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20260406 |