JPWO2023189109A1 - - Google Patents
Info
- Publication number
- JPWO2023189109A1 JPWO2023189109A1 JP2024511511A JP2024511511A JPWO2023189109A1 JP WO2023189109 A1 JPWO2023189109 A1 JP WO2023189109A1 JP 2024511511 A JP2024511511 A JP 2024511511A JP 2024511511 A JP2024511511 A JP 2024511511A JP WO2023189109 A1 JPWO2023189109 A1 JP WO2023189109A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/40—Resistors
- H10D1/47—Resistors having no potential barriers
- H10D1/474—Resistors having no potential barriers comprising refractory metals, transition metals, noble metals, metal compounds or metal alloys, e.g. silicides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/071—Manufacture or treatment of dielectric parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
- H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
- H10W20/427—Power or ground buses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
- H10W20/498—Resistive arrangements or effects of, or between, wiring layers
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022052630 | 2022-03-28 | ||
| PCT/JP2023/007288 WO2023189109A1 (ja) | 2022-03-28 | 2023-02-28 | 電子部品およびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2023189109A1 true JPWO2023189109A1 (https=) | 2023-10-05 |
| JPWO2023189109A5 JPWO2023189109A5 (https=) | 2024-12-10 |
Family
ID=88200602
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024511511A Pending JPWO2023189109A1 (https=) | 2022-03-28 | 2023-02-28 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20250014992A1 (https=) |
| JP (1) | JPWO2023189109A1 (https=) |
| WO (1) | WO2023189109A1 (https=) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3206435B2 (ja) * | 1996-07-02 | 2001-09-10 | 株式会社デンソー | 半導体装置およびその製造方法 |
| JP3374680B2 (ja) * | 1996-11-06 | 2003-02-10 | 株式会社デンソー | 半導体装置の製造方法 |
| JP7232679B2 (ja) * | 2019-03-20 | 2023-03-03 | ローム株式会社 | 電子部品 |
-
2023
- 2023-02-28 JP JP2024511511A patent/JPWO2023189109A1/ja active Pending
- 2023-02-28 WO PCT/JP2023/007288 patent/WO2023189109A1/ja not_active Ceased
-
2024
- 2024-09-26 US US18/897,269 patent/US20250014992A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US20250014992A1 (en) | 2025-01-09 |
| WO2023189109A1 (ja) | 2023-10-05 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20240927 |