JPWO2023189109A1 - - Google Patents

Info

Publication number
JPWO2023189109A1
JPWO2023189109A1 JP2024511511A JP2024511511A JPWO2023189109A1 JP WO2023189109 A1 JPWO2023189109 A1 JP WO2023189109A1 JP 2024511511 A JP2024511511 A JP 2024511511A JP 2024511511 A JP2024511511 A JP 2024511511A JP WO2023189109 A1 JPWO2023189109 A1 JP WO2023189109A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024511511A
Other languages
Japanese (ja)
Other versions
JPWO2023189109A5 (https=
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2023189109A1 publication Critical patent/JPWO2023189109A1/ja
Publication of JPWO2023189109A5 publication Critical patent/JPWO2023189109A5/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00Resistors, capacitors or inductors
    • H10D1/40Resistors
    • H10D1/47Resistors having no potential barriers
    • H10D1/474Resistors having no potential barriers comprising refractory metals, transition metals, noble metals, metal compounds or metal alloys, e.g. silicides
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • H10D84/02Manufacture or treatment characterised by using material-based technologies
    • H10D84/03Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/01Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/01Manufacture or treatment
    • H10W20/071Manufacture or treatment of dielectric parts thereof
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/40Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/427Power or ground buses
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/40Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/498Resistive arrangements or effects of, or between, wiring layers
JP2024511511A 2022-03-28 2023-02-28 Pending JPWO2023189109A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022052630 2022-03-28
PCT/JP2023/007288 WO2023189109A1 (ja) 2022-03-28 2023-02-28 電子部品およびその製造方法

Publications (2)

Publication Number Publication Date
JPWO2023189109A1 true JPWO2023189109A1 (https=) 2023-10-05
JPWO2023189109A5 JPWO2023189109A5 (https=) 2024-12-10

Family

ID=88200602

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024511511A Pending JPWO2023189109A1 (https=) 2022-03-28 2023-02-28

Country Status (3)

Country Link
US (1) US20250014992A1 (https=)
JP (1) JPWO2023189109A1 (https=)
WO (1) WO2023189109A1 (https=)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3206435B2 (ja) * 1996-07-02 2001-09-10 株式会社デンソー 半導体装置およびその製造方法
JP3374680B2 (ja) * 1996-11-06 2003-02-10 株式会社デンソー 半導体装置の製造方法
JP7232679B2 (ja) * 2019-03-20 2023-03-03 ローム株式会社 電子部品

Also Published As

Publication number Publication date
US20250014992A1 (en) 2025-01-09
WO2023189109A1 (ja) 2023-10-05

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Legal Events

Date Code Title Description
A521 Request for written amendment filed

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Effective date: 20240927