JPWO2023189040A1 - - Google Patents
Info
- Publication number
- JPWO2023189040A1 JPWO2023189040A1 JP2024511459A JP2024511459A JPWO2023189040A1 JP WO2023189040 A1 JPWO2023189040 A1 JP WO2023189040A1 JP 2024511459 A JP2024511459 A JP 2024511459A JP 2024511459 A JP2024511459 A JP 2024511459A JP WO2023189040 A1 JPWO2023189040 A1 JP WO2023189040A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
- H10K39/30—Devices controlled by radiation
- H10K39/32—Organic image sensors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022054676 | 2022-03-29 | ||
| PCT/JP2023/006507 WO2023189040A1 (ja) | 2022-03-29 | 2023-02-22 | 光電変換素子及び撮像素子 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2023189040A1 true JPWO2023189040A1 (https=) | 2023-10-05 |
Family
ID=88200565
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024511459A Pending JPWO2023189040A1 (https=) | 2022-03-29 | 2023-02-22 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20240423002A1 (https=) |
| JP (1) | JPWO2023189040A1 (https=) |
| CN (1) | CN118872062A (https=) |
| WO (1) | WO2023189040A1 (https=) |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3788740B2 (ja) * | 2001-02-07 | 2006-06-21 | シャープ株式会社 | アクティブマトリクス基板および電磁波検出器 |
| KR100935771B1 (ko) * | 2007-11-28 | 2010-01-06 | 주식회사 동부하이텍 | 이미지 센서 및 그 제조방법 |
| JP5637751B2 (ja) * | 2009-08-28 | 2014-12-10 | 富士フイルム株式会社 | 固体撮像装置，固体撮像装置の製造方法 |
| JP6233717B2 (ja) * | 2012-12-28 | 2017-11-22 | パナソニックＩｐマネジメント株式会社 | 固体撮像装置およびその製造方法 |
| JP6128593B2 (ja) * | 2013-05-27 | 2017-05-17 | 富士フイルム株式会社 | 有機光電変換素子および撮像素子 |
| US10978514B2 (en) * | 2015-10-06 | 2021-04-13 | Sony Semiconductor Solutions Corporation | Solid-state imaging device, and method of manufacturing solid-state imaging device |
-
2023
- 2023-02-22 JP JP2024511459A patent/JPWO2023189040A1/ja active Pending
- 2023-02-22 WO PCT/JP2023/006507 patent/WO2023189040A1/ja not_active Ceased
- 2023-02-22 CN CN202380025685.2A patent/CN118872062A/zh active Pending
-
2024
- 2024-08-23 US US18/814,437 patent/US20240423002A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| WO2023189040A1 (ja) | 2023-10-05 |
| CN118872062A (zh) | 2024-10-29 |
| US20240423002A1 (en) | 2024-12-19 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20260212 |