JPWO2023181210A1 - - Google Patents

Info

Publication number
JPWO2023181210A1
JPWO2023181210A1 JP2023541088A JP2023541088A JPWO2023181210A1 JP WO2023181210 A1 JPWO2023181210 A1 JP WO2023181210A1 JP 2023541088 A JP2023541088 A JP 2023541088A JP 2023541088 A JP2023541088 A JP 2023541088A JP WO2023181210 A1 JPWO2023181210 A1 JP WO2023181210A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2023541088A
Other versions
JP7438466B1 (ja
JPWO2023181210A5 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2023181210A1 publication Critical patent/JPWO2023181210A1/ja
Application granted granted Critical
Publication of JP7438466B1 publication Critical patent/JP7438466B1/ja
Publication of JPWO2023181210A5 publication Critical patent/JPWO2023181210A5/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2023541088A 2022-03-23 2022-03-23 半導体装置及びその製造方法並びに電力変換装置 Active JP7438466B1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/013670 WO2023181210A1 (ja) 2022-03-23 2022-03-23 半導体装置及びその製造方法並びに電力変換装置

Publications (3)

Publication Number Publication Date
JPWO2023181210A1 true JPWO2023181210A1 (ja) 2023-09-28
JP7438466B1 JP7438466B1 (ja) 2024-02-26
JPWO2023181210A5 JPWO2023181210A5 (ja) 2024-03-01

Family

ID=88100567

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023541088A Active JP7438466B1 (ja) 2022-03-23 2022-03-23 半導体装置及びその製造方法並びに電力変換装置

Country Status (2)

Country Link
JP (1) JP7438466B1 (ja)
WO (1) WO2023181210A1 (ja)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3262657B2 (ja) * 1993-12-14 2002-03-04 株式会社日立製作所 ボンディング方法及びボンディング構造
US20200273716A1 (en) * 2017-07-07 2020-08-27 Mitsubishi Electric Corporation Semiconductor device and method for manufacturing semiconductor device
JP7383881B2 (ja) * 2019-01-16 2023-11-21 富士電機株式会社 半導体装置および半導体装置の製造方法
DE102019111963A1 (de) * 2019-05-08 2020-11-12 Danfoss Silicon Power Gmbh Halbleitermodul mit einem Halbleiter und mit einem Metallformteil, der vom Halbleiter elektrisch kontaktiert wird
CN116134593A (zh) * 2020-08-03 2023-05-16 三菱电机株式会社 半导体装置、半导体装置的制造方法以及电力变换装置

Also Published As

Publication number Publication date
JP7438466B1 (ja) 2024-02-26
WO2023181210A1 (ja) 2023-09-28

Similar Documents

Publication Publication Date Title
BR102023001877A2 (ja)
BR102022017795A2 (ja)
JPWO2023238390A1 (ja)
BR202022009269U2 (ja)
BR202022005961U2 (ja)
JPWO2023135624A1 (ja)
CN307087904S (ja)
BY13163U (ja)
BY13137U (ja)
BY13139U (ja)
BY13156U (ja)
CN307093578S (ja)
BY13155U (ja)
CN307084854S (ja)
CN307065111S (ja)
CN307062117S (ja)
CN307057434S (ja)
CN307056076S (ja)
BY13136U (ja)
CN307056066S (ja)
CN307052457S (ja)
BY13169U (ja)
BY13168U (ja)
BY13167U (ja)
BY13166U (ja)

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230705

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20230705

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20230705

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20230822

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20231017

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20240116

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20240213

R150 Certificate of patent or registration of utility model

Ref document number: 7438466

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150