JPWO2023166657A1 - - Google Patents
Info
- Publication number
- JPWO2023166657A1 JPWO2023166657A1 JP2022561541A JP2022561541A JPWO2023166657A1 JP WO2023166657 A1 JPWO2023166657 A1 JP WO2023166657A1 JP 2022561541 A JP2022561541 A JP 2022561541A JP 2022561541 A JP2022561541 A JP 2022561541A JP WO2023166657 A1 JPWO2023166657 A1 JP WO2023166657A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2022/009114 WO2023166657A1 (en) | 2022-03-03 | 2022-03-03 | Semiconductor device and power conversion device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP7337469B1 JP7337469B1 (en) | 2023-09-04 |
| JPWO2023166657A1 true JPWO2023166657A1 (en) | 2023-09-07 |
| JPWO2023166657A5 JPWO2023166657A5 (en) | 2024-02-06 |
Family
ID=87882047
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022561541A Active JP7337469B1 (en) | 2022-03-03 | 2022-03-03 | Semiconductor equipment and power conversion equipment |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP7337469B1 (en) |
| WO (1) | WO2023166657A1 (en) |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4738562B2 (en) | 2000-03-15 | 2011-08-03 | 三菱電機株式会社 | Manufacturing method of semiconductor device |
| JP2007134625A (en) | 2005-11-14 | 2007-05-31 | Mitsubishi Electric Corp | Semiconductor device and its process for fabrication |
| JP2014003191A (en) | 2012-06-20 | 2014-01-09 | Hitachi Ltd | Semiconductor device |
| JP6715567B2 (en) | 2014-12-16 | 2020-07-01 | 富士電機株式会社 | Semiconductor device |
| DE102014119465B3 (en) | 2014-12-22 | 2016-05-25 | Infineon Technologies Ag | SEMICONDUCTOR DEVICE WITH STRIPULAR TRENCHGATE STRUCTURES, TRANSISTORMESIS AND DIODE MESAS |
| JP6253854B1 (en) | 2016-03-30 | 2017-12-27 | 三菱電機株式会社 | Semiconductor device, method for manufacturing the same, and power conversion device |
| JP6848382B2 (en) * | 2016-11-16 | 2021-03-24 | 富士電機株式会社 | Semiconductor devices and methods for manufacturing semiconductor devices |
| DE102017108738B4 (en) * | 2017-04-24 | 2022-01-27 | Infineon Technologies Ag | SiC SEMICONDUCTOR DEVICE WITH AN OFFSET IN A TRENCH BOTTOM AND MANUFACTURING METHOD THEREOF |
| WO2018225600A1 (en) * | 2017-06-06 | 2018-12-13 | 三菱電機株式会社 | Semiconductor device and power conversion apparatus |
| JP7029364B2 (en) | 2018-08-20 | 2022-03-03 | 株式会社東芝 | Semiconductor device |
| JP6991370B2 (en) | 2019-01-08 | 2022-01-12 | 三菱電機株式会社 | Semiconductor equipment and power conversion equipment |
-
2022
- 2022-03-03 WO PCT/JP2022/009114 patent/WO2023166657A1/en active Application Filing
- 2022-03-03 JP JP2022561541A patent/JP7337469B1/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| WO2023166657A1 (en) | 2023-09-07 |
| JP7337469B1 (en) | 2023-09-04 |
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