JPWO2023163230A1 - - Google Patents

Info

Publication number
JPWO2023163230A1
JPWO2023163230A1 JP2024503325A JP2024503325A JPWO2023163230A1 JP WO2023163230 A1 JPWO2023163230 A1 JP WO2023163230A1 JP 2024503325 A JP2024503325 A JP 2024503325A JP 2024503325 A JP2024503325 A JP 2024503325A JP WO2023163230 A1 JPWO2023163230 A1 JP WO2023163230A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024503325A
Other languages
Japanese (ja)
Other versions
JPWO2023163230A5 (enrdf_load_stackoverflow
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2023163230A1 publication Critical patent/JPWO2023163230A1/ja
Publication of JPWO2023163230A5 publication Critical patent/JPWO2023163230A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
JP2024503325A 2022-02-28 2023-02-28 Pending JPWO2023163230A1 (enrdf_load_stackoverflow)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022030046 2022-02-28
PCT/JP2023/007424 WO2023163230A1 (ja) 2022-02-28 2023-02-28 レーザダイオード

Publications (2)

Publication Number Publication Date
JPWO2023163230A1 true JPWO2023163230A1 (enrdf_load_stackoverflow) 2023-08-31
JPWO2023163230A5 JPWO2023163230A5 (enrdf_load_stackoverflow) 2024-10-08

Family

ID=87766323

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024503325A Pending JPWO2023163230A1 (enrdf_load_stackoverflow) 2022-02-28 2023-02-28

Country Status (2)

Country Link
JP (1) JPWO2023163230A1 (enrdf_load_stackoverflow)
WO (1) WO2023163230A1 (enrdf_load_stackoverflow)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11340580A (ja) * 1997-07-30 1999-12-10 Fujitsu Ltd 半導体レーザ、半導体発光素子、及び、その製造方法
JP2001057461A (ja) * 1999-06-10 2001-02-27 Nichia Chem Ind Ltd 窒化物半導体レーザ素子
JP2002299768A (ja) * 2001-03-30 2002-10-11 Matsushita Electric Ind Co Ltd 半導体発光装置
JP2004111853A (ja) * 2002-09-20 2004-04-08 Sanyo Electric Co Ltd 窒化物系半導体レーザ素子
US20110103421A1 (en) * 2009-10-29 2011-05-05 Tarun Kumar Sharma Application-oriented nitride substrates for epitaxial growth of electronic and optoelectronic device structures
WO2014123092A1 (ja) * 2013-02-05 2014-08-14 株式会社トクヤマ 窒化物半導体発光素子
JP2016111353A (ja) * 2014-12-08 2016-06-20 パロ アルト リサーチ センター インコーポレイテッド ｎ−クラッド層に工学的不均一合金組成を有する窒化物レーザーダイオード
WO2021060538A1 (ja) * 2019-09-27 2021-04-01 旭化成株式会社 レーザーダイオード

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11340580A (ja) * 1997-07-30 1999-12-10 Fujitsu Ltd 半導体レーザ、半導体発光素子、及び、その製造方法
JP2001057461A (ja) * 1999-06-10 2001-02-27 Nichia Chem Ind Ltd 窒化物半導体レーザ素子
JP2002299768A (ja) * 2001-03-30 2002-10-11 Matsushita Electric Ind Co Ltd 半導体発光装置
JP2004111853A (ja) * 2002-09-20 2004-04-08 Sanyo Electric Co Ltd 窒化物系半導体レーザ素子
US20110103421A1 (en) * 2009-10-29 2011-05-05 Tarun Kumar Sharma Application-oriented nitride substrates for epitaxial growth of electronic and optoelectronic device structures
WO2014123092A1 (ja) * 2013-02-05 2014-08-14 株式会社トクヤマ 窒化物半導体発光素子
JP2016111353A (ja) * 2014-12-08 2016-06-20 パロ アルト リサーチ センター インコーポレイテッド ｎ−クラッド層に工学的不均一合金組成を有する窒化物レーザーダイオード
WO2021060538A1 (ja) * 2019-09-27 2021-04-01 旭化成株式会社 レーザーダイオード

Also Published As

Publication number Publication date
WO2023163230A1 (ja) 2023-08-31

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