JPWO2023157387A1 - - Google Patents

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Publication number
JPWO2023157387A1
JPWO2023157387A1 JP2023512255A JP2023512255A JPWO2023157387A1 JP WO2023157387 A1 JPWO2023157387 A1 JP WO2023157387A1 JP 2023512255 A JP2023512255 A JP 2023512255A JP 2023512255 A JP2023512255 A JP 2023512255A JP WO2023157387 A1 JPWO2023157387 A1 JP WO2023157387A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2023512255A
Other versions
JPWO2023157387A5 (ja
JP7361990B1 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication of JPWO2023157387A1 publication Critical patent/JPWO2023157387A1/ja
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Publication of JP7361990B1 publication Critical patent/JP7361990B1/ja
Publication of JPWO2023157387A5 publication Critical patent/JPWO2023157387A5/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2023512255A 2022-02-17 2022-10-28 Ｉｉｉ族元素窒化物基板およびｉｉｉ族元素窒化物基板の製造方法 Active JP7361990B1 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022023095 2022-02-17
JP2022023095 2022-02-17
PCT/JP2022/040285 WO2023157387A1 (ja) 2022-02-17 2022-10-28 Ｉｉｉ族元素窒化物基板およびｉｉｉ族元素窒化物基板の製造方法

Publications (3)

Publication Number Publication Date
JPWO2023157387A1 true JPWO2023157387A1 (ja) 2023-08-24
JP7361990B1 JP7361990B1 (ja) 2023-10-16
JPWO2023157387A5 JPWO2023157387A5 (ja) 2024-01-23

Family

ID=87577914

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023512255A Active JP7361990B1 (ja) 2022-02-17 2022-10-28 Ｉｉｉ族元素窒化物基板およびｉｉｉ族元素窒化物基板の製造方法

Country Status (2)

Country Link
JP (1) JP7361990B1 (ja)
WO (1) WO2023157387A1 (ja)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5979547B2 (ja) 2012-11-01 2016-08-24 パナソニックＩｐマネジメント株式会社 エピタキシャルウェハ及びその製造方法
JP6588220B2 (ja) 2015-04-22 2019-10-09 シャープ株式会社 窒化物半導体エピタキシャルウェハおよびその製造方法

Also Published As

Publication number Publication date
JP7361990B1 (ja) 2023-10-16
WO2023157387A1 (ja) 2023-08-24

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