JPWO2023153317A1 - - Google Patents

Info

Publication number
JPWO2023153317A1
JPWO2023153317A1 JP2023580213A JP2023580213A JPWO2023153317A1 JP WO2023153317 A1 JPWO2023153317 A1 JP WO2023153317A1 JP 2023580213 A JP2023580213 A JP 2023580213A JP 2023580213 A JP2023580213 A JP 2023580213A JP WO2023153317 A1 JPWO2023153317 A1 JP WO2023153317A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2023580213A
Other languages
Japanese (ja)
Other versions
JP7786482B2 (ja
JPWO2023153317A5 (https=
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2023153317A1 publication Critical patent/JPWO2023153317A1/ja
Publication of JPWO2023153317A5 publication Critical patent/JPWO2023153317A5/ja
Priority to JP2025226639A priority Critical patent/JP2026035803A/ja
Application granted granted Critical
Publication of JP7786482B2 publication Critical patent/JP7786482B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H10P10/128—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates by direct semiconductor to semiconductor bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0606—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0616—Monitoring of warpages, curvatures, damages, defects or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/32—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations
    • H10P72/3212—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations the substrates to be conveyed not being semiconductor wafers or large planar substrates, e.g. chips or lead frames
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/32—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations
    • H10P72/3218—Conveying cassettes, containers or carriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/301—Marks applied to devices, e.g. for alignment or identification for alignment
JP2023580213A 2022-02-10 2023-02-02 基板補正装置、基板積層装置、基板処理システム、基板補正方法、基板処理方法、および半導体装置の製造方法 Active JP7786482B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2025226639A JP2026035803A (ja) 2022-02-10 2025-12-03 基板補正装置、基板積層装置、基板処理システム、基板補正方法、基板処理方法、および半導体装置の製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022019634 2022-02-10
JP2022019634 2022-02-10
PCT/JP2023/003482 WO2023153317A1 (ja) 2022-02-10 2023-02-02 基板補正装置、基板積層装置、基板処理システム、基板補正方法、基板処理方法、および半導体装置の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2025226639A Division JP2026035803A (ja) 2022-02-10 2025-12-03 基板補正装置、基板積層装置、基板処理システム、基板補正方法、基板処理方法、および半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JPWO2023153317A1 true JPWO2023153317A1 (https=) 2023-08-17
JPWO2023153317A5 JPWO2023153317A5 (https=) 2024-09-24
JP7786482B2 JP7786482B2 (ja) 2025-12-16

Family

ID=87564246

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2023580213A Active JP7786482B2 (ja) 2022-02-10 2023-02-02 基板補正装置、基板積層装置、基板処理システム、基板補正方法、基板処理方法、および半導体装置の製造方法
JP2025226639A Pending JP2026035803A (ja) 2022-02-10 2025-12-03 基板補正装置、基板積層装置、基板処理システム、基板補正方法、基板処理方法、および半導体装置の製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2025226639A Pending JP2026035803A (ja) 2022-02-10 2025-12-03 基板補正装置、基板積層装置、基板処理システム、基板補正方法、基板処理方法、および半導体装置の製造方法

Country Status (6)

Country Link
US (1) US20240404859A1 (https=)
JP (2) JP7786482B2 (https=)
KR (1) KR20240140173A (https=)
CN (1) CN118679551A (https=)
TW (1) TW202347429A (https=)
WO (1) WO2023153317A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI876992B (zh) * 2023-05-17 2025-03-11 新加坡商Ｐｅｐ創新私人有限公司 對半導體壓縮模塑產生的晶粒偏移的補償方法
CN117457560A (zh) * 2023-12-07 2024-01-26 武汉新芯集成电路制造有限公司 一种带有系统误差补偿功能的键合装置以及方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013258377A (ja) * 2012-06-14 2013-12-26 Sony Corp 半導体装置の製造装置および半導体装置の製造方法
WO2017217431A1 (ja) * 2016-06-16 2017-12-21 株式会社ニコン 積層装置および積層方法
WO2018012300A1 (ja) * 2016-07-12 2018-01-18 株式会社ニコン 積層基板製造方法、積層基板製造装置、積層基板製造システム、および基板処理装置
WO2018221391A1 (ja) * 2017-05-29 2018-12-06 株式会社ニコン 基板貼り合わせ方法、積層基板製造装置及び積層基板製造システム

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160136691A (ko) 2015-05-20 2016-11-30 오정수 와이어 길이조절 및 접이구조를 통해 크기 조절이 가능한 구이용 석쇠

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013258377A (ja) * 2012-06-14 2013-12-26 Sony Corp 半導体装置の製造装置および半導体装置の製造方法
WO2017217431A1 (ja) * 2016-06-16 2017-12-21 株式会社ニコン 積層装置および積層方法
WO2018012300A1 (ja) * 2016-07-12 2018-01-18 株式会社ニコン 積層基板製造方法、積層基板製造装置、積層基板製造システム、および基板処理装置
WO2018221391A1 (ja) * 2017-05-29 2018-12-06 株式会社ニコン 基板貼り合わせ方法、積層基板製造装置及び積層基板製造システム

Also Published As

Publication number Publication date
WO2023153317A1 (ja) 2023-08-17
CN118679551A (zh) 2024-09-20
KR20240140173A (ko) 2024-09-24
TW202347429A (zh) 2023-12-01
JP7786482B2 (ja) 2025-12-16
JP2026035803A (ja) 2026-03-04
US20240404859A1 (en) 2024-12-05

Similar Documents

Publication Publication Date Title
JPWO2023153317A1 (https=)
BR102023012440A2 (https=)
BY13164U (https=)
BY13150U (https=)
CN307050392S (https=)
CN307048726S (https=)
CN307048573S (https=)
CN307048442S (https=)
CN307047769S (https=)
CN307047709S (https=)
CN307047118S (https=)
CN307046276S (https=)
CN307046198S (https=)
CN307046165S (https=)
CN307045325S (https=)
CN307044987S (https=)
CN307044860S (https=)
CN307044449S (https=)
CN307044296S (https=)
BY23999C1 (https=)
BY23979C1 (https=)
BY13168U (https=)
BY13166U (https=)
BY13165U (https=)
BY13163U (https=)

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20240708

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20240708

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20240717

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20240717

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20240731

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20250527

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20250718

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20250813

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20251104

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20251117

R150 Certificate of patent or registration of utility model

Ref document number: 7786482

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150