JPWO2023135925A1 - - Google Patents

Info

Publication number
JPWO2023135925A1
JPWO2023135925A1 JP2023573867A JP2023573867A JPWO2023135925A1 JP WO2023135925 A1 JPWO2023135925 A1 JP WO2023135925A1 JP 2023573867 A JP2023573867 A JP 2023573867A JP 2023573867 A JP2023573867 A JP 2023573867A JP WO2023135925 A1 JPWO2023135925 A1 JP WO2023135925A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023573867A
Other languages
Japanese (ja)
Other versions
JPWO2023135925A5 (https=
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2023135925A1 publication Critical patent/JPWO2023135925A1/ja
Publication of JPWO2023135925A5 publication Critical patent/JPWO2023135925A5/ja
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02Regulating voltage or current
    • G05F3/08Regulating voltage or current wherein the variable is DC
    • G05F3/10Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/30Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities
    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10Regulating voltage or current 
    • G05F1/46Regulating voltage or current  wherein the variable actually regulated by the final control device is DC
    • G05F1/56Regulating voltage or current  wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices
    • G05F1/565Regulating voltage or current  wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
    • G05F1/567Regulating voltage or current  wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Nonlinear Science (AREA)
  • Control Of Electrical Variables (AREA)
JP2023573867A 2022-01-11 2022-11-16 Pending JPWO2023135925A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022002191 2022-01-11
PCT/JP2022/042509 WO2023135925A1 (ja) 2022-01-11 2022-11-16 基準電圧発生回路および電子機器

Publications (2)

Publication Number Publication Date
JPWO2023135925A1 true JPWO2023135925A1 (https=) 2023-07-20
JPWO2023135925A5 JPWO2023135925A5 (https=) 2024-09-30

Family

ID=87278858

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023573867A Pending JPWO2023135925A1 (https=) 2022-01-11 2022-11-16

Country Status (4)

Country Link
US (1) US20250147532A1 (https=)
EP (1) EP4465147A4 (https=)
JP (1) JPWO2023135925A1 (https=)
WO (1) WO2023135925A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118012207B (zh) * 2024-02-01 2024-08-20 深圳市亿方电子有限公司 一种高电源抑制比参考电压集成电路
KR20250155407A (ko) * 2024-04-23 2025-10-30 국립한밭대학교 산학협력단 양자컴퓨팅 환경을 위한 극저온 정전압 발생 회로

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6828847B1 (en) * 2003-02-27 2004-12-07 Analog Devices, Inc. Bandgap voltage reference circuit and method for producing a temperature curvature corrected voltage reference
US7511567B2 (en) * 2005-10-06 2009-03-31 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Bandgap reference voltage circuit
IT1397432B1 (it) * 2009-12-11 2013-01-10 St Microelectronics Rousset Circuito generatore di una grandezza elettrica di riferimento.
JP5434695B2 (ja) * 2010-03-08 2014-03-05 富士通セミコンダクター株式会社 バンドギャップ回路、低電圧検出回路及びレギュレータ回路
KR102627994B1 (ko) * 2018-10-04 2024-01-22 삼성전자주식회사 비휘발성 메모리 장치의 센싱 회로, 이를 포함하는 비휘발성 메모리 장치 및 비휘발성 메모리 장치의 동작 방법
EP3680745B1 (en) * 2019-01-09 2022-12-21 NXP USA, Inc. Self-biased temperature-compensated zener reference
EP3683649A1 (en) * 2019-01-21 2020-07-22 NXP USA, Inc. Bandgap current architecture optimized for size and accuracy
CN109976425B (zh) * 2019-04-25 2020-10-27 湖南品腾电子科技有限公司 一种低温度系数基准源电路
US11537153B2 (en) * 2019-07-01 2022-12-27 Stmicroelectronics S.R.L. Low power voltage reference circuits
US11637534B2 (en) * 2021-09-22 2023-04-25 Texas Instruments Incorporated Bandgap amplifier biasing and startup scheme

Also Published As

Publication number Publication date
WO2023135925A1 (ja) 2023-07-20
EP4465147A1 (en) 2024-11-20
US20250147532A1 (en) 2025-05-08
EP4465147A4 (en) 2025-04-30

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