JPWO2023135773A1 - - Google Patents

Info

Publication number
JPWO2023135773A1
JPWO2023135773A1 JP2023573774A JP2023573774A JPWO2023135773A1 JP WO2023135773 A1 JPWO2023135773 A1 JP WO2023135773A1 JP 2023573774 A JP2023573774 A JP 2023573774A JP 2023573774 A JP2023573774 A JP 2023573774A JP WO2023135773 A1 JPWO2023135773 A1 JP WO2023135773A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023573774A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2023135773A1 publication Critical patent/JPWO2023135773A1/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2023573774A 2022-01-14 2022-01-14 Pending JPWO2023135773A1 (https=)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/001247 WO2023135773A1 (ja) 2022-01-14 2022-01-14 フォトマスクの作成方法、データ作成方法、及び電子デバイスの製造方法

Publications (1)

Publication Number Publication Date
JPWO2023135773A1 true JPWO2023135773A1 (https=) 2023-07-20

Family

ID=87278745

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023573774A Pending JPWO2023135773A1 (https=) 2022-01-14 2022-01-14

Country Status (4)

Country Link
US (1) US20240329518A1 (https=)
JP (1) JPWO2023135773A1 (https=)
CN (1) CN118382839A (https=)
WO (1) WO2023135773A1 (https=)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6477123A (en) * 1987-06-17 1989-03-23 Hitachi Ltd Reduction stepper and exposure process
JP2001068398A (ja) * 1999-08-27 2001-03-16 Hitachi Ltd 半導体集積回路装置の製造方法およびマスクの製造方法
JP2003282430A (ja) * 2002-01-21 2003-10-03 Nikon Corp 露光装置及び露光方法、デバイス製造方法、並びに測定方法及び測定装置
JP2004054052A (ja) * 2002-07-22 2004-02-19 Sharp Corp 半導体集積回路製造用マスクパターンデータ生成方法およびその検証方法
US20070224526A1 (en) * 2006-03-17 2007-09-27 International Business Machines Corporation Fast method to model photoresist images using focus blur and resist blur
JP2008310353A (ja) * 1995-12-22 2008-12-25 Toshiba Corp 光近接効果補正方法と装置、光近接効果検証方法と装置、露光用マスクの製造方法、更に光近接効果補正プログラムと光近接効果検証プログラム
JP2009105453A (ja) * 2009-02-10 2009-05-14 Canon Inc 露光パラメータ及びレチクルパターンを決定する決定方法、露光方法及びデバイス製造方法。
JP2013061669A (ja) * 2007-01-18 2013-04-04 Nikon Corp Ｏｐｃ（光学近接効果補正）設計プロセス

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6477123A (en) * 1987-06-17 1989-03-23 Hitachi Ltd Reduction stepper and exposure process
JP2008310353A (ja) * 1995-12-22 2008-12-25 Toshiba Corp 光近接効果補正方法と装置、光近接効果検証方法と装置、露光用マスクの製造方法、更に光近接効果補正プログラムと光近接効果検証プログラム
JP2001068398A (ja) * 1999-08-27 2001-03-16 Hitachi Ltd 半導体集積回路装置の製造方法およびマスクの製造方法
JP2003282430A (ja) * 2002-01-21 2003-10-03 Nikon Corp 露光装置及び露光方法、デバイス製造方法、並びに測定方法及び測定装置
JP2004054052A (ja) * 2002-07-22 2004-02-19 Sharp Corp 半導体集積回路製造用マスクパターンデータ生成方法およびその検証方法
US20070224526A1 (en) * 2006-03-17 2007-09-27 International Business Machines Corporation Fast method to model photoresist images using focus blur and resist blur
JP2013061669A (ja) * 2007-01-18 2013-04-04 Nikon Corp Ｏｐｃ（光学近接効果補正）設計プロセス
JP2009105453A (ja) * 2009-02-10 2009-05-14 Canon Inc 露光パラメータ及びレチクルパターンを決定する決定方法、露光方法及びデバイス製造方法。

Also Published As

Publication number Publication date
WO2023135773A1 (ja) 2023-07-20
US20240329518A1 (en) 2024-10-03
CN118382839A (zh) 2024-07-23

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