JPWO2023132001A1 - - Google Patents
Info
- Publication number
- JPWO2023132001A1 JPWO2023132001A1 JP2023572271A JP2023572271A JPWO2023132001A1 JP WO2023132001 A1 JPWO2023132001 A1 JP WO2023132001A1 JP 2023572271 A JP2023572271 A JP 2023572271A JP 2023572271 A JP2023572271 A JP 2023572271A JP WO2023132001 A1 JPWO2023132001 A1 JP WO2023132001A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/182—Colour image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/199—Back-illuminated image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
- H10F39/8033—Photosensitive area
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8057—Optical shielding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/809—Constructional details of image sensors of hybrid image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/811—Interconnections
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
- H04N25/705—Pixels for depth measurement, e.g. RGBZ
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2022/000069 WO2023132001A1 (ja) | 2022-01-05 | 2022-01-05 | 光電変換装置、光電変換システム、および移動体 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2023132001A1 true JPWO2023132001A1 (https=) | 2023-07-13 |
| JPWO2023132001A5 JPWO2023132001A5 (https=) | 2025-01-08 |
| JP7767466B2 JP7767466B2 (ja) | 2025-11-11 |
Family
ID=87073440
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023572271A Active JP7767466B2 (ja) | 2022-01-05 | 2022-01-05 | 光電変換装置、光電変換システム、および移動体 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20240355857A1 (https=) |
| JP (1) | JP7767466B2 (https=) |
| WO (1) | WO2023132001A1 (https=) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011151461A (ja) * | 2010-01-19 | 2011-08-04 | Hoya Corp | 固体撮像素子 |
| CN113473050A (zh) * | 2020-03-31 | 2021-10-01 | 佳能株式会社 | 光电转换装置、光电转换系统和移动物体 |
| JP2021176154A (ja) * | 2018-07-18 | 2021-11-04 | ソニーセミコンダクタソリューションズ株式会社 | 受光素子および測距モジュール |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3410286B2 (ja) * | 1996-04-01 | 2003-05-26 | 三菱電機株式会社 | 絶縁ゲート型半導体装置 |
| US7002231B2 (en) * | 2004-02-02 | 2006-02-21 | Micron Technology, Inc. | Barrier regions for image sensors |
| KR20120002331A (ko) * | 2010-06-30 | 2012-01-05 | 삼성전자주식회사 | Ｐｎｐ 3중층을 포함한 ｃｍｏｓ 이미지 센서 및 그 이미지 센서 제조 방법 |
| KR102180102B1 (ko) * | 2014-03-07 | 2020-11-17 | 삼성전자주식회사 | 이미지 센서 및 그 제조방법 |
| JP7058479B2 (ja) * | 2016-10-18 | 2022-04-22 | ソニーセミコンダクタソリューションズ株式会社 | 光検出器 |
| KR102619669B1 (ko) * | 2016-12-30 | 2023-12-29 | 삼성전자주식회사 | 이미지 센서 |
| KR102553314B1 (ko) * | 2018-08-29 | 2023-07-10 | 삼성전자주식회사 | 이미지 센서 |
| JP7544602B2 (ja) * | 2018-12-27 | 2024-09-03 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子 |
| JP7558822B2 (ja) * | 2020-10-29 | 2024-10-01 | キヤノン株式会社 | 光電変換装置、光電変換システム、および移動体 |
-
2022
- 2022-01-05 WO PCT/JP2022/000069 patent/WO2023132001A1/ja not_active Ceased
- 2022-01-05 JP JP2023572271A patent/JP7767466B2/ja active Active
-
2024
- 2024-07-02 US US18/762,474 patent/US20240355857A1/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011151461A (ja) * | 2010-01-19 | 2011-08-04 | Hoya Corp | 固体撮像素子 |
| JP2021176154A (ja) * | 2018-07-18 | 2021-11-04 | ソニーセミコンダクタソリューションズ株式会社 | 受光素子および測距モジュール |
| CN113473050A (zh) * | 2020-03-31 | 2021-10-01 | 佳能株式会社 | 光电转换装置、光电转换系统和移动物体 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2023132001A1 (ja) | 2023-07-13 |
| US20240355857A1 (en) | 2024-10-24 |
| JP7767466B2 (ja) | 2025-11-11 |
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